JP2002133895A - アンチフューズを用いたリダンダンシ回路及び半導体メモリにおける不良アドレス検索方法 - Google Patents

アンチフューズを用いたリダンダンシ回路及び半導体メモリにおける不良アドレス検索方法

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Publication number
JP2002133895A
JP2002133895A JP2001163171A JP2001163171A JP2002133895A JP 2002133895 A JP2002133895 A JP 2002133895A JP 2001163171 A JP2001163171 A JP 2001163171A JP 2001163171 A JP2001163171 A JP 2001163171A JP 2002133895 A JP2002133895 A JP 2002133895A
Authority
JP
Japan
Prior art keywords
circuit
data
electrode
banks
address
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001163171A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002133895A5 (enExample
Inventor
Haruki Toda
春希 戸田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2001163171A priority Critical patent/JP2002133895A/ja
Priority to US09/931,024 priority patent/US6430101B1/en
Publication of JP2002133895A publication Critical patent/JP2002133895A/ja
Priority to US10/173,027 priority patent/US6567333B2/en
Publication of JP2002133895A5 publication Critical patent/JP2002133895A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/44—Indication or identification of errors, e.g. for repair

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
JP2001163171A 2000-08-17 2001-05-30 アンチフューズを用いたリダンダンシ回路及び半導体メモリにおける不良アドレス検索方法 Pending JP2002133895A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001163171A JP2002133895A (ja) 2000-08-17 2001-05-30 アンチフューズを用いたリダンダンシ回路及び半導体メモリにおける不良アドレス検索方法
US09/931,024 US6430101B1 (en) 2000-08-17 2001-08-17 Fuse circuit using anti-fuse and method for searching for failed address in semiconductor memory
US10/173,027 US6567333B2 (en) 2000-08-17 2002-06-18 Fuse circuit using anti-fuse and method for searching for failed address in semiconductor memory

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000247700 2000-08-17
JP2000-247700 2000-08-17
JP2001163171A JP2002133895A (ja) 2000-08-17 2001-05-30 アンチフューズを用いたリダンダンシ回路及び半導体メモリにおける不良アドレス検索方法

Publications (2)

Publication Number Publication Date
JP2002133895A true JP2002133895A (ja) 2002-05-10
JP2002133895A5 JP2002133895A5 (enExample) 2007-11-01

Family

ID=26598048

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001163171A Pending JP2002133895A (ja) 2000-08-17 2001-05-30 アンチフューズを用いたリダンダンシ回路及び半導体メモリにおける不良アドレス検索方法

Country Status (2)

Country Link
US (2) US6430101B1 (enExample)
JP (1) JP2002133895A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6930935B2 (en) 2003-02-14 2005-08-16 Elpida Memory Inc. Redundancy circuit and semiconductor device using the same
US7266025B2 (en) 2003-10-03 2007-09-04 Kabushiki Kaisha Toshiba Semiconductor integrated circuit
JP2008047248A (ja) * 2006-08-18 2008-02-28 Fujitsu Ltd 電気ヒューズ回路及び電子部品
JP4833214B2 (ja) * 2004-09-01 2011-12-07 インターナショナル・ビジネス・マシーンズ・コーポレーション 差異感知技術による低電圧プログラマブルｅＦＵＳＥ
WO2014030756A1 (en) * 2012-08-20 2014-02-27 Ps4 Luxco S.A.R.L. Semiconductor Device having an amplifying circuit

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6426910B1 (en) * 2000-08-30 2002-07-30 Micron Technology, Inc. Enhanced fuse configurations for low-voltage flash memories
JP2002203901A (ja) * 2000-12-27 2002-07-19 Toshiba Microelectronics Corp フューズ回路
JP2002208294A (ja) * 2001-01-12 2002-07-26 Toshiba Corp リダンダンシーシステムを有する半導体記憶装置
TW565852B (en) * 2001-08-29 2003-12-11 Matsushita Electric Industrial Co Ltd Determination circuit of program value, semiconductor integrated circuit device having the same and determination method of program value
US6590825B2 (en) * 2001-11-01 2003-07-08 Silicon Storage Technology, Inc. Non-volatile flash fuse element
US6687170B2 (en) * 2001-12-06 2004-02-03 Infineon Technologies Richmond, Lp System and method for storing parity information in fuses
US6839292B2 (en) * 2001-12-14 2005-01-04 Micron Technology, Inc. Apparatus and method for parallel programming of antifuses
ITMI20030384A1 (it) * 2003-03-04 2004-09-05 St Microelectronics Srl Dispositivo di memoria non volatile differenziale e metodo di lettura di bit di detto dispositivo di memoria.
WO2005015567A1 (de) * 2003-07-29 2005-02-17 Infineon Technologies Ag Nichtflüchtiges speicherelement mit erhöhter datensicherheit
JP2005108318A (ja) * 2003-09-30 2005-04-21 Toshiba Corp 半導体装置および半導体装置のテスト方法
JP4308637B2 (ja) * 2003-12-17 2009-08-05 株式会社日立製作所 半導体試験装置
JP2006012211A (ja) 2004-06-22 2006-01-12 Toshiba Corp 半導体集積回路
US7190629B2 (en) * 2005-02-08 2007-03-13 Micron Technology, Inc. Circuit and method for reading an antifuse
US7200064B1 (en) * 2005-10-07 2007-04-03 International Business Machines Corporation Apparatus and method for providing a reprogrammable electrically programmable fuse
JP2007116045A (ja) * 2005-10-24 2007-05-10 Elpida Memory Inc 半導体装置
US7304527B1 (en) * 2005-11-30 2007-12-04 Altera Corporation Fuse sensing circuit
KR100757924B1 (ko) * 2006-03-07 2007-09-11 주식회사 하이닉스반도체 반도체 메모리의 테스트 모드 제어장치 및 방법
KR100827657B1 (ko) * 2006-09-05 2008-05-07 삼성전자주식회사 반도체 메모리 장치.
KR100819104B1 (ko) * 2006-09-07 2008-04-03 삼성전자주식회사 병렬 비트 테스트 회로 및 그에 의한 병렬 비트 테스트방법
US20090058503A1 (en) * 2007-08-30 2009-03-05 Michael Joseph Genden Method to Bridge a Distance Between eFuse Banks That Contain Encoded Data
US20090153228A1 (en) * 2007-12-18 2009-06-18 International Business Machines Corporation Structure for improving fuse state detection and yield in semiconductor applications
US7936582B1 (en) * 2008-03-19 2011-05-03 Xilinx, Inc. E-fuse read circuit with dual comparators
JP5592599B2 (ja) * 2008-05-14 2014-09-17 ピーエスフォー ルクスコ エスエイアールエル 半導体装置
US8307930B2 (en) * 2009-07-20 2012-11-13 International Truck Intellectual Property Company, Llc Scalable, hybrid energy storage for plug-in vehicles
CN101944388B (zh) * 2010-09-03 2013-07-31 深圳市国微电子有限公司 一种反熔丝型prom
US8760911B2 (en) * 2012-04-04 2014-06-24 Matthew Christian Memory system configured for use in a binary predictor
US8787106B2 (en) * 2012-07-06 2014-07-22 SK Hynix Inc. Data storing circuit and repair circuit of memory device including the same
US9165679B2 (en) 2012-09-18 2015-10-20 Samsung Electronics Co., Ltd. Post package repairing method, method of preventing multiple activation of spare word lines, and semiconductor memory device including fuse programming circuit
CN107464585B (zh) 2016-06-06 2020-02-28 华邦电子股份有限公司 电子式熔丝装置以及电子式熔丝阵列
CN108242251B (zh) * 2016-12-23 2019-08-16 联华电子股份有限公司 动态随机存取存储器
JP6869315B2 (ja) * 2019-02-19 2021-05-12 華邦電子股▲ふん▼有限公司Ｗｉｎｂｏｎｄ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏｒｐ． 電子ヒューズ回路及びその動作方法
US12080344B2 (en) * 2021-12-16 2024-09-03 Bae Systems Information And Electronic Systems Integration Inc. Radiation hardened e-fuse macro
JP7781010B2 (ja) * 2022-03-30 2025-12-05 キヤノン株式会社 記憶装置、液体吐出ヘッドおよび液体吐出装置
TWI860769B (zh) * 2023-07-06 2024-11-01 億而得微電子股份有限公司 小面積共電壓反熔絲陣列

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05101687A (ja) * 1991-04-30 1993-04-23 Internatl Business Mach Corp <Ibm> 低電圧プログラム可能記憶素子
JPH087595A (ja) * 1994-01-31 1996-01-12 Sgs Thomson Microelectron Sa 読み出しモードにおける寄生を減じた、特にメモリ冗長回路用の不揮発性でプログラム可能な双安定マルチバイブレータ
JPH1166862A (ja) * 1997-08-14 1999-03-09 Nec Corp 半導体メモリ
JP2000503794A (ja) * 1996-10-03 2000-03-28 マイクロン・テクノロジー・インコーポレーテッド アンチヒューズ検出回路
JP2000091505A (ja) * 1998-09-08 2000-03-31 Toshiba Corp 半導体集積回路装置
JP2000200497A (ja) * 1998-11-05 2000-07-18 Nec Corp ヒュ―ズ判定回路およびメモリの冗長設定回路
JP2000207895A (ja) * 1998-01-09 2000-07-28 Inf Storage Devices Inc フラッシュ・メモリ集積回路用トリムビット回路
JP2001118996A (ja) * 1999-08-27 2001-04-27 Samsung Electronics Co Ltd 集積回路のヒューズオプション回路及び方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09161476A (ja) 1995-10-04 1997-06-20 Toshiba Corp 半導体メモリ及びそのテスト回路、並びにデ−タ転送システム
TW341367U (en) * 1997-10-28 1998-09-21 Utek Semiconductor Corp An auto repairing memory
US6157583A (en) * 1999-03-02 2000-12-05 Motorola, Inc. Integrated circuit memory having a fuse detect circuit and method therefor

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05101687A (ja) * 1991-04-30 1993-04-23 Internatl Business Mach Corp <Ibm> 低電圧プログラム可能記憶素子
JPH087595A (ja) * 1994-01-31 1996-01-12 Sgs Thomson Microelectron Sa 読み出しモードにおける寄生を減じた、特にメモリ冗長回路用の不揮発性でプログラム可能な双安定マルチバイブレータ
JP2000503794A (ja) * 1996-10-03 2000-03-28 マイクロン・テクノロジー・インコーポレーテッド アンチヒューズ検出回路
JPH1166862A (ja) * 1997-08-14 1999-03-09 Nec Corp 半導体メモリ
JP2000207895A (ja) * 1998-01-09 2000-07-28 Inf Storage Devices Inc フラッシュ・メモリ集積回路用トリムビット回路
JP2000091505A (ja) * 1998-09-08 2000-03-31 Toshiba Corp 半導体集積回路装置
JP2000200497A (ja) * 1998-11-05 2000-07-18 Nec Corp ヒュ―ズ判定回路およびメモリの冗長設定回路
JP2001118996A (ja) * 1999-08-27 2001-04-27 Samsung Electronics Co Ltd 集積回路のヒューズオプション回路及び方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6930935B2 (en) 2003-02-14 2005-08-16 Elpida Memory Inc. Redundancy circuit and semiconductor device using the same
US7266025B2 (en) 2003-10-03 2007-09-04 Kabushiki Kaisha Toshiba Semiconductor integrated circuit
US7397714B2 (en) 2003-10-03 2008-07-08 Kabushiki Kaisha Toshiba Setting method of chip initial state
US7525871B2 (en) 2003-10-03 2009-04-28 Kabushiki Kaisha Toshiba Semiconductor integrated circuit
JP4833214B2 (ja) * 2004-09-01 2011-12-07 インターナショナル・ビジネス・マシーンズ・コーポレーション 差異感知技術による低電圧プログラマブルｅＦＵＳＥ
JP2008047248A (ja) * 2006-08-18 2008-02-28 Fujitsu Ltd 電気ヒューズ回路及び電子部品
WO2014030756A1 (en) * 2012-08-20 2014-02-27 Ps4 Luxco S.A.R.L. Semiconductor Device having an amplifying circuit

Also Published As

Publication number Publication date
US20020041533A1 (en) 2002-04-11
US6430101B1 (en) 2002-08-06
US6567333B2 (en) 2003-05-20
US20020191468A1 (en) 2002-12-19

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