ITMI20030384A1 - Dispositivo di memoria non volatile differenziale e metodo di lettura di bit di detto dispositivo di memoria. - Google Patents

Dispositivo di memoria non volatile differenziale e metodo di lettura di bit di detto dispositivo di memoria.

Info

Publication number
ITMI20030384A1
ITMI20030384A1 IT000384A ITMI20030384A ITMI20030384A1 IT MI20030384 A1 ITMI20030384 A1 IT MI20030384A1 IT 000384 A IT000384 A IT 000384A IT MI20030384 A ITMI20030384 A IT MI20030384A IT MI20030384 A1 ITMI20030384 A1 IT MI20030384A1
Authority
IT
Italy
Prior art keywords
memory device
reading method
bit reading
differential non
volatile memory
Prior art date
Application number
IT000384A
Other languages
English (en)
Inventor
Fabio Pasolini
Michele Tronconi
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT000384A priority Critical patent/ITMI20030384A1/it
Priority to US10/792,033 priority patent/US6876566B2/en
Publication of ITMI20030384A1 publication Critical patent/ITMI20030384A1/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
IT000384A 2003-03-04 2003-03-04 Dispositivo di memoria non volatile differenziale e metodo di lettura di bit di detto dispositivo di memoria. ITMI20030384A1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
IT000384A ITMI20030384A1 (it) 2003-03-04 2003-03-04 Dispositivo di memoria non volatile differenziale e metodo di lettura di bit di detto dispositivo di memoria.
US10/792,033 US6876566B2 (en) 2003-03-04 2004-03-03 Differential non-volatile memory device and bit reading method for the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT000384A ITMI20030384A1 (it) 2003-03-04 2003-03-04 Dispositivo di memoria non volatile differenziale e metodo di lettura di bit di detto dispositivo di memoria.

Publications (1)

Publication Number Publication Date
ITMI20030384A1 true ITMI20030384A1 (it) 2004-09-05

Family

ID=32983200

Family Applications (1)

Application Number Title Priority Date Filing Date
IT000384A ITMI20030384A1 (it) 2003-03-04 2003-03-04 Dispositivo di memoria non volatile differenziale e metodo di lettura di bit di detto dispositivo di memoria.

Country Status (2)

Country Link
US (1) US6876566B2 (it)
IT (1) ITMI20030384A1 (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8705282B2 (en) 2011-11-01 2014-04-22 Silicon Storage Technology, Inc. Mixed voltage non-volatile memory integrated circuit with power saving
US9245647B2 (en) * 2014-06-30 2016-01-26 Chengdu Monolithic Power Systems Co., Ltd. One-time programmable memory cell and circuit
CN114649042A (zh) * 2020-12-18 2022-06-21 圣邦微电子（北京）股份有限公司 用于差分型otp存储器的读取电路

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4787047A (en) * 1985-03-22 1988-11-22 Intersil Electrically erasable fused programmable logic array
US5949703A (en) * 1996-12-26 1999-09-07 Kabushiki Kaisha Toshiba Semiconductor memory device in which data in programmable ROM can be apparently rewritten
JP2002133895A (ja) * 2000-08-17 2002-05-10 Toshiba Corp アンチフューズを用いたリダンダンシ回路及び半導体メモリにおける不良アドレス検索方法

Also Published As

Publication number Publication date
US20040190346A1 (en) 2004-09-30
US6876566B2 (en) 2005-04-05

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