JP2002094189A - 窒化物半導体レーザ素子およびそれを用いた光学装置 - Google Patents

窒化物半導体レーザ素子およびそれを用いた光学装置

Info

Publication number
JP2002094189A
JP2002094189A JP2000279207A JP2000279207A JP2002094189A JP 2002094189 A JP2002094189 A JP 2002094189A JP 2000279207 A JP2000279207 A JP 2000279207A JP 2000279207 A JP2000279207 A JP 2000279207A JP 2002094189 A JP2002094189 A JP 2002094189A
Authority
JP
Japan
Prior art keywords
layer
nitride semiconductor
light emitting
substrate
emitting layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000279207A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002094189A5 (enExample
Inventor
Yuzo Tsuda
有三 津田
Shigetoshi Ito
茂稔 伊藤
Toshiyuki Okumura
敏之 奥村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP2000279207A priority Critical patent/JP2002094189A/ja
Priority to US09/950,576 priority patent/US6614824B2/en
Publication of JP2002094189A publication Critical patent/JP2002094189A/ja
Publication of JP2002094189A5 publication Critical patent/JP2002094189A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/04—Gain spectral shaping, flattening
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
JP2000279207A 2000-09-14 2000-09-14 窒化物半導体レーザ素子およびそれを用いた光学装置 Pending JP2002094189A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2000279207A JP2002094189A (ja) 2000-09-14 2000-09-14 窒化物半導体レーザ素子およびそれを用いた光学装置
US09/950,576 US6614824B2 (en) 2000-09-14 2001-09-13 Nitride semiconductor laser device and optical device using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000279207A JP2002094189A (ja) 2000-09-14 2000-09-14 窒化物半導体レーザ素子およびそれを用いた光学装置

Publications (2)

Publication Number Publication Date
JP2002094189A true JP2002094189A (ja) 2002-03-29
JP2002094189A5 JP2002094189A5 (enExample) 2007-03-08

Family

ID=18764248

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000279207A Pending JP2002094189A (ja) 2000-09-14 2000-09-14 窒化物半導体レーザ素子およびそれを用いた光学装置

Country Status (2)

Country Link
US (1) US6614824B2 (enExample)
JP (1) JP2002094189A (enExample)

Cited By (8)

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Publication number Priority date Publication date Assignee Title
WO2007032355A1 (ja) * 2005-09-15 2007-03-22 Matsushita Electric Industrial Co., Ltd. 半導体発光素子
JP2007081182A (ja) * 2005-09-15 2007-03-29 Matsushita Electric Ind Co Ltd 半導体発光素子
JP2007081183A (ja) * 2005-09-15 2007-03-29 Matsushita Electric Ind Co Ltd 半導体発光素子
JP2007081181A (ja) * 2005-09-15 2007-03-29 Matsushita Electric Ind Co Ltd 半導体発光素子
US7408199B2 (en) 2004-04-02 2008-08-05 Nichia Corporation Nitride semiconductor laser device and nitride semiconductor device
JP2011044648A (ja) * 2009-08-24 2011-03-03 Sharp Corp 窒化物半導体レーザ素子およびその製造方法
WO2016147512A1 (ja) * 2015-03-19 2016-09-22 ソニー株式会社 半導体発光素子及び半導体発光素子組立体
JP7639610B2 (ja) 2021-08-19 2025-03-05 ウシオ電機株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法

Families Citing this family (29)

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AU2002328130B2 (en) * 2001-06-06 2008-05-29 Ammono Sp. Z O.O. Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride
TWI231321B (en) 2001-10-26 2005-04-21 Ammono Sp Zoo Substrate for epitaxy
JP4383172B2 (ja) * 2001-10-26 2009-12-16 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン 窒化物バルク単結晶層を用いる発光素子構造及びその製造方法
US6791120B2 (en) * 2002-03-26 2004-09-14 Sanyo Electric Co., Ltd. Nitride-based semiconductor device and method of fabricating the same
US20060138431A1 (en) * 2002-05-17 2006-06-29 Robert Dwilinski Light emitting device structure having nitride bulk single crystal layer
WO2003097906A1 (en) * 2002-05-17 2003-11-27 Ammono Sp.Zo.O. Bulk single crystal production facility employing supercritical ammonia
JP4416648B2 (ja) * 2002-05-17 2010-02-17 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン 発光素子の製造方法
JP2004107114A (ja) * 2002-09-17 2004-04-08 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体基板の製造方法
AU2003285767A1 (en) * 2002-12-11 2004-06-30 Ammono Sp. Z O.O. Process for obtaining bulk monocrystalline gallium-containing nitride
JP4558502B2 (ja) * 2002-12-11 2010-10-06 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン テンプレート型基板の製造方法
EP1830416B1 (en) * 2002-12-20 2011-06-08 Cree Inc. Methods of forming semiconductor devices including mesa structures and multiple passivation layers and related devices
GB2400234A (en) * 2003-04-02 2004-10-06 Sharp Kk Semiconductor device and method of manufacture
US7462882B2 (en) * 2003-04-24 2008-12-09 Sharp Kabushiki Kaisha Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus
US7462983B2 (en) * 2003-06-27 2008-12-09 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. White light emitting device
US7122842B2 (en) * 2003-09-08 2006-10-17 Group Iv Semiconductor Inc. Solid state white light emitter and display using same
JP4326297B2 (ja) * 2003-09-30 2009-09-02 シャープ株式会社 モノリシック多波長レーザ素子およびその製造方法
US8398767B2 (en) * 2004-06-11 2013-03-19 Ammono S.A. Bulk mono-crystalline gallium-containing nitride and its application
PL371405A1 (pl) * 2004-11-26 2006-05-29 Ammono Sp.Z O.O. Sposób wytwarzania objętościowych monokryształów metodą wzrostu na zarodku
KR100707187B1 (ko) * 2005-04-21 2007-04-13 삼성전자주식회사 질화갈륨계 화합물 반도체 소자
KR101221067B1 (ko) * 2006-02-09 2013-01-11 삼성전자주식회사 리지 도파형 반도체 레이저 다이오드
US7518139B2 (en) * 2006-10-31 2009-04-14 Lehigh University Gallium nitride-based device and method
US7843980B2 (en) * 2007-05-16 2010-11-30 Rohm Co., Ltd. Semiconductor laser diode
US8432946B2 (en) * 2007-12-06 2013-04-30 Rohm Co., Ltd. Nitride semiconductor laser diode
JP2010041035A (ja) * 2008-06-27 2010-02-18 Sanyo Electric Co Ltd 半導体レーザ素子およびその製造方法ならびに光ピックアップ装置
JP2011204914A (ja) * 2010-03-25 2011-10-13 Sony Corp 光発振装置及び記録装置
JP5589671B2 (ja) * 2010-08-20 2014-09-17 ソニー株式会社 レーザ装置、レーザ増幅変調方法。
US9318875B1 (en) * 2011-01-24 2016-04-19 Soraa Laser Diode, Inc. Color converting element for laser diode
JP2012244099A (ja) * 2011-05-24 2012-12-10 Renesas Electronics Corp 半導体発光素子
JP2020537360A (ja) * 2017-10-16 2020-12-17 クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. 電子及び光電子デバイスのための窒化アルミニウム基板の電気化学的除去

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JPH0661582A (ja) * 1992-08-06 1994-03-04 Mitsubishi Electric Corp 半導体レーザ装置の製造方法
JPH09307182A (ja) * 1996-05-20 1997-11-28 Mitsubishi Electric Corp リッジ型半導体レーザおよびその製造方法
JPH10256657A (ja) * 1997-03-07 1998-09-25 Sharp Corp 窒化ガリウム系半導体発光素子、及び半導体レーザ光源装置
JPH11150294A (ja) * 1997-11-17 1999-06-02 Hitachi Ltd 半導体発光素子
JPH11214788A (ja) * 1998-01-26 1999-08-06 Sharp Corp 窒化ガリウム系半導体レーザ素子
JPH11340510A (ja) * 1998-03-27 1999-12-10 Sharp Corp 半導体素子及びその製造方法
JP2000183466A (ja) * 1998-12-21 2000-06-30 Toshiba Corp 化合物半導体レーザおよびその製造方法
JP2000216497A (ja) * 1999-01-22 2000-08-04 Sanyo Electric Co Ltd 半導体素子およびその製造方法
JP2000244062A (ja) * 1999-02-22 2000-09-08 Sanyo Electric Co Ltd 半導体レーザ素子およびその製造方法

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JPH1075011A (ja) * 1996-08-30 1998-03-17 Sony Corp 半導体レーザ
JPH10261838A (ja) 1997-03-19 1998-09-29 Sharp Corp 窒化ガリウム系半導体発光素子及び半導体レーザ光源装置
JPH10270804A (ja) 1997-03-26 1998-10-09 Hitachi Ltd 光情報処理装置およびこれに適した固体光源および半導体発光装置
JP3270374B2 (ja) * 1997-11-07 2002-04-02 日本電気株式会社 半導体レーザの製造方法
TW413972B (en) * 1998-04-22 2000-12-01 Matsushita Electric Industrial Co Ltd Semiconductor laser device
JP4245691B2 (ja) * 1998-08-04 2009-03-25 シャープ株式会社 窒化ガリウム系半導体レーザ素子及び光ピックアップ装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0661582A (ja) * 1992-08-06 1994-03-04 Mitsubishi Electric Corp 半導体レーザ装置の製造方法
JPH09307182A (ja) * 1996-05-20 1997-11-28 Mitsubishi Electric Corp リッジ型半導体レーザおよびその製造方法
JPH10256657A (ja) * 1997-03-07 1998-09-25 Sharp Corp 窒化ガリウム系半導体発光素子、及び半導体レーザ光源装置
JPH11150294A (ja) * 1997-11-17 1999-06-02 Hitachi Ltd 半導体発光素子
JPH11214788A (ja) * 1998-01-26 1999-08-06 Sharp Corp 窒化ガリウム系半導体レーザ素子
JPH11340510A (ja) * 1998-03-27 1999-12-10 Sharp Corp 半導体素子及びその製造方法
JP2000183466A (ja) * 1998-12-21 2000-06-30 Toshiba Corp 化合物半導体レーザおよびその製造方法
JP2000216497A (ja) * 1999-01-22 2000-08-04 Sanyo Electric Co Ltd 半導体素子およびその製造方法
JP2000244062A (ja) * 1999-02-22 2000-09-08 Sanyo Electric Co Ltd 半導体レーザ素子およびその製造方法

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7408199B2 (en) 2004-04-02 2008-08-05 Nichia Corporation Nitride semiconductor laser device and nitride semiconductor device
KR101337689B1 (ko) 2004-04-02 2013-12-06 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 레이저 소자 및 질화물 반도체 소자
US7813397B2 (en) 2004-04-02 2010-10-12 Nichia Corporation Nitride semiconductor laser device
US7863623B2 (en) 2005-09-15 2011-01-04 Panasonic Corporation Semiconductor light emitting device
JP2007081181A (ja) * 2005-09-15 2007-03-29 Matsushita Electric Ind Co Ltd 半導体発光素子
JP2007081183A (ja) * 2005-09-15 2007-03-29 Matsushita Electric Ind Co Ltd 半導体発光素子
WO2007032355A1 (ja) * 2005-09-15 2007-03-22 Matsushita Electric Industrial Co., Ltd. 半導体発光素子
JP2007081182A (ja) * 2005-09-15 2007-03-29 Matsushita Electric Ind Co Ltd 半導体発光素子
JP2011044648A (ja) * 2009-08-24 2011-03-03 Sharp Corp 窒化物半導体レーザ素子およびその製造方法
WO2016147512A1 (ja) * 2015-03-19 2016-09-22 ソニー株式会社 半導体発光素子及び半導体発光素子組立体
JPWO2016147512A1 (ja) * 2015-03-19 2017-12-28 ソニー株式会社 半導体発光素子及び半導体発光素子組立体
US10686291B2 (en) 2015-03-19 2020-06-16 Sony Corporation Semiconductor light emitting element and semiconductor light emitting element assembly
JP7639610B2 (ja) 2021-08-19 2025-03-05 ウシオ電機株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法

Also Published As

Publication number Publication date
US20020054617A1 (en) 2002-05-09
US6614824B2 (en) 2003-09-02

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