JP2002057194A - 触媒噴射手段を備えたヒータブロック - Google Patents

触媒噴射手段を備えたヒータブロック

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Publication number
JP2002057194A
JP2002057194A JP2001164803A JP2001164803A JP2002057194A JP 2002057194 A JP2002057194 A JP 2002057194A JP 2001164803 A JP2001164803 A JP 2001164803A JP 2001164803 A JP2001164803 A JP 2001164803A JP 2002057194 A JP2002057194 A JP 2002057194A
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Prior art keywords
catalyst
heater block
wafer
conduit
injection
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JP4429548B2 (ja
Inventor
Sung Gyu Pyo
成 奎 表
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SK Hynix Inc
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Hynix Semiconductor Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

(57)【要約】 （修正有） 【解決手段】 ヒータブロックは、受け部材３Ａと、前
記受け部材の上部に結合され、縁部に突出部３Ｃが設け
られた上板３Ｂと、前記突出部によって形成された前記
上板の凹面１０に設置され、上部にウェーハ９がのせら
れるように構成されたヒータ８とからなり、前記受け部
材及び上板の内部に形成された管路４，５，６に沿って
供給される触媒が前記突出部に設けられた多数の噴射孔
７を介して前記ウェーハの表面に均一に噴射されるよう
に構成されたことを特徴とする。 【効果】 ヒータブロックに触媒噴射手段を設置し、蒸
着工程の際ウェーハの表面に触媒が均一に噴射されるよ
うにすることで、蒸着される金属の接着力及び膜質が良
好になって素子の電気的特性が向上し、蒸着速度が増加
して素子の歩留りが増大する。

Description

【発明の詳細な説明】
【０００１】
【発明の属する技術分野】本発明は半導体素子の製造に
用いられるＣＶＤ装備のチャンバ内部に設けられるヒー
タブロックに係り、特に触媒噴射手段を備えたヒータブ
ロックに関する。
【０００２】
【従来の技術】一般に、半導体素子の金属配線はアルミ
ニウム（Ａｌ）、タングステン（Ｗ）、チタン（Ｔｉ）
などからなる。このような金属はＰＶＤ或いはＣＶＤ法
で蒸着される。前記ＣＶＤ法は気体状態の金属前駆体を
ウェーハの表面に噴射して前駆体の化学的反応によって
ウェーハ上に金属が蒸着されるようにする方法である
が、このような工程はＣＶＤ装備のチャンバ内で行われ
る。
【０００３】ＣＶＤ装備のチャンバ内部には前駆体運送
装置から供給される気体状態の前駆体をウェーハの表面
に均一に噴射させるためのシャワーヘッドが設置され、
前記シャワーヘッドの下部、即ち前記チャンバの底面部
には蒸着工程の際前記ウェーハを適正温度に保持させる
ためのヒータブロックが設置される。
【０００４】ところで、半導体素子の高集積化及び高速
化に伴い、金属のステップカバレージ及び埋込み特性が
限界に達して前記のような金属の使用が難しくなってお
り、これにより新しい金属配線材料として銅が用いられ
る趨勢である。
【０００５】しかし、このように構成されたＣＶＤ装備
を用いて銅を蒸着すると、接着力と膜質が不良になって
素子の電気的特性が低下し、蒸着速度が非常に低くなっ
て素子の歩留りが低下する。
【０００６】銅（Ｃｕ）の膜質を向上させると同時に蒸
着速度を増加させるためには、蒸着工程の際に化学的添
加剤（強化剤）からなる触媒(Catalyst)をウェーハの表
面に均一に噴射しなければならないが、従来のチャンバ
には触媒を噴射し得る装置が備えられておらず、かかる
効果を得ることができない実状である。
【０００７】
【発明が解決しようとする課題】従って、本発明の目的
は、ヒータブロックに触媒噴射手段を設置し、蒸着工程
の際にウェーハの表面に触媒が均一に噴射されるように
することで、上記短所を解消することのできる、触媒噴
射手段を備えたヒータブロックを提供することにある。
【０００８】
【課題を解決するための手段】上記目的を達成するため
に、本発明の実施例に係るヒータブロックは、受け部材
と、前記受け部材の上部に結合され、縁部に突出部が設
けられた上板と、前記突出部によって形成された前記上
板の凹面に設置され、上部にウェーハがのせられるよう
に構成されたヒータとからなり、前記受け部材及び上板
の内部に形成された管路に沿って供給される触媒が前記
突出部に設けられた多数の噴射孔を介して前記ウェーハ
の表面に均一に噴射されるように構成されたことを特徴
とする。
【０００９】また、本発明の実施例に係るヒータブロッ
クは、内部に第1管路が形成された受け部材と、前記受
け部材の上部に結合され、内部には前記第１管路に連結
された多数の第２管路が形成され、縁部には突出部が形
成され、前記突出部内には前記第２管路に連結された第
３管路が形成され、前記第３管路に供給された触媒が外
部に噴射できるように前記突出部に多数の噴射孔が形成
された上板と、前記突出部によって形成された前記上板
の凹面に設置され、上部にウェーハがのせられるように
構成されたヒータとからなり、前記第１乃至第３管路に
沿って外部から供給される触媒が前記噴射孔を通して前
記ウェーハの表面に均一に噴射されるように構成された
ことを特徴とする。
【００１０】そして、前記第１管路は触媒の流量を調節
できるように流量調節器が設置された触媒供給管に連結
され、前記第２管路は放射状に配列されたことを特徴と
する。
【００１１】
【発明の実施の形態】以下、添付図に基づいて本発明を
詳細に説明する。
【００１２】図１は本発明に係るヒータブロックを説明
するための断面図であり、図1を参照して説明すると、
次ぎの通りである。
【００１３】内部に第１管路４が形成された受け部材３
Ａの上部に上板３Ｂが結合される。前記上板３Ｂの内部
には前記第１管路４に連結された多数の第２管路５が形
成され、縁部には突出部３Ｃが設けられ、中央部が凹面
１０を成す。また、前記突出部３Ｃ内には前記第２管路
５に連結された第３管路６が形成され、前記突出部３Ｃ
には前記第３管路６に供給された触媒が前記凹面１０に
向かって噴射できるように多数の噴射孔７が設けられ
る。そして、前記突出部３Ｃによって形成された前記上
板３Ｂの凹面１０には上部にウェーハ９がのせられるよ
うに構成されたヒータ８が設置される。
【００１４】ここで、前記第２管路５は図２に示すよう
に放射(radial)状に配列されるが、その数を４〜３２個
程度とし、各管路５の直径を１〜２０ｍｍとする。ま
た、前記突出部３Cは前記ウェーハ９より高く形成され
る。前記突出部３Ｃには１６〜１２８個程度の噴射孔が
下部に０〜６０°の噴射角を成すように形成される。各
噴射孔７の直径を０.１〜１０ｍｍとする。
【００１５】参考に、図１は図２の線Ｘ１−Ｘ２に沿っ
た断面図である。
【００１６】このように構成されたヒータブロックをＣ
ＶＤ装備のチャンバ内に設置した後、前記第１管路４に
外部から触媒を供給するための触媒供給管２を連結させ
る。そして、前記触媒供給管２の所定の部分に流量調節
器を設置して触媒の流量を一定に保持させる。すると、
前記第１及び第２管路４及び５に沿って第３管路６に供
給された触媒は、図２に示すように、第３管路６の内部
を循環し、各噴射孔７を通して前記ウェーハ９の表面に
噴射される。
【００１７】このように金属を蒸着する前にウェーハの
表面に触媒を噴射するＣＥＣＶＤ(Chemical Enhanced C
VD)法を用いると、Ｃｕ、Ａｇ、Ａｕ、Ｐｔ、Ｗ、Ｔ
ａ、Ｔｉ、Ａｌ、Ｒｕなどのような単金属、単金属の酸
化物または窒化物、酸窒化物などを蒸着することができ
る。この際、触媒としては純粋ヨード（Ｉ）、ヨード
（Ｉ）含有化合物、即ち元素周期律表の７族元素である
Ｆ、Ｃｌ、Ｂｒ、Ｉ、Ａｔなどの液体またはガスを使用
するが、Ｈｈｆａｃ１／２Ｈ2Ｏ、Ｈｈｆａｃ、ＴＭＶ
Ｓなども使用可能である。また、前記触媒の噴射時間は
１秒〜１０分の範囲内とし、前記のような化学的処理は
−２０〜３００℃の温度で行う。
【００１８】
【発明の効果】上述したように、本発明は、ヒータブロ
ックに触媒噴射手段を設置し、蒸着工程の際ウェーハの
表面に触媒が均一に噴射されるようにすることで、蒸着
される金属の接着力及び膜質が良好になって素子の電気
的特性が向上し、蒸着速度が増加して素子の歩留りが増
大する。
【図面の簡単な説明】
【図１】本発明に係るヒータブロックを説明するための
断面図である。
【図２】図１の上板の平面図である。
【符号の説明】
１ 流量調節器 ２ 触媒供給管 ３Ａ 受け部材 ３Ｂ 上板 ３Ｃ 突出部 ４ 第１管路 ５ 第２管路 ６ 第３管路 ７ 噴射孔 ８ ヒータ ９ ウェーハ １０ 凹面

Claims (8)

    【特許請求の範囲】
  1. 【請求項１】 受け部材と、 前記受け部材の上部に結合され、縁部に突出部が形成さ
    れた上板と、 前記突出部によって形成された前記上板の凹面に設置さ
    れ、上部にウェーハがのせられるように構成されたヒー
    タとからなり、 前記受け部材及び上板の内部に形成された管路に沿って
    供給される触媒が前記突出部に形成された多数の噴射孔
    を通して前記ウェーハの表面に均一に噴射されるように
    構成されたことを特徴とする触媒噴射手段を備えたヒー
    タブロック。
  2. 【請求項２】前記噴射孔の数を１６〜１２８個とし、各
    噴射孔の直径を０.１〜１０ｍｍとすることを特徴とす
    る請求項１記載の触媒噴射手段を備えたヒータブロッ
    ク。
  3. 【請求項３】 内部に第１管路が形成された受け部材
    と、 前記受け部材の上部に結合され、内部には前記第１管路
    に連結された多数の第２管路が形成され、縁部には突出
    部が設けられ、前記突出部内には前記第２管路に連結さ
    れた第３管路が形成され、前記第３管路に供給された触
    媒が外部に噴射できるように前記突出部に多数の噴射孔
    が形成された上板と、 前記突出部によって形成された前記上板の凹面に設置さ
    れ、上部にウェーハがのせられるように構成されたヒー
    タとからなり、 前記第１乃至第３管路に沿って外部から供給される触媒
    が前記噴射孔を通して前記ウェーハの表面に均一に噴射
    されるように構成されたことを特徴とする触媒噴射手段
    を備えたヒータブロック。
  4. 【請求項４】前記第２管路は放射状に配列されたことを
    特徴とする請求項３記載の触媒噴射手段を備えたヒータ
    ブロック。
  5. 【請求項５】前記第２管路の数を４〜３２個とし、各管
    路の直径を１〜２０ｍｍとすることを特徴とする請求項
    ３記載の触媒噴射手段を備えたヒータブロック。
  6. 【請求項６】前記噴射孔の数を１６〜１２８個とし、各
    噴射孔の直径を０.１〜１０ｍｍとすることを特徴とす
    る請求項３記載の触媒噴射手段を備えたヒータブロッ
    ク。
  7. 【請求項７】前記噴射孔は下部に０〜６０°の噴射角を
    成すように設けられたことを特徴とする請求項３記載の
    触媒噴射手段を備えたヒータブロック。
  8. 【請求項８】前記第１管路は触媒の流量を調節できるよ
    うに流量調節器が設置された触媒供給管に連結されたこ
    とを特徴とする請求項３記載の触媒噴射手段を備えたヒ
    ータブロック。
JP2001164803A 2000-06-13 2001-05-31 触媒噴射手段を備えたヒータブロック Expired - Fee Related JP4429548B2 (ja)

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Application Number Priority Date Filing Date Title
KR2000-32397 2000-06-13
KR10-2000-0032397A KR100406173B1 (ko) 2000-06-13 2000-06-13 촉매 분사 수단을 구비한 히터 블록

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JP2002057194A true JP2002057194A (ja) 2002-02-22
JP4429548B2 JP4429548B2 (ja) 2010-03-10

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* Cited by examiner, † Cited by third party
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US20040005269A1 (en) * 2002-06-06 2004-01-08 Houjin Huang Method for selectively producing carbon nanostructures
JP4584722B2 (ja) * 2005-01-13 2010-11-24 シャープ株式会社 プラズマ処理装置および同装置により製造された半導体素子
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