JP2001316821A - 低抵抗率炭化珪素 - Google Patents

低抵抗率炭化珪素

Info

Publication number
JP2001316821A
JP2001316821A JP2001050352A JP2001050352A JP2001316821A JP 2001316821 A JP2001316821 A JP 2001316821A JP 2001050352 A JP2001050352 A JP 2001050352A JP 2001050352 A JP2001050352 A JP 2001050352A JP 2001316821 A JP2001316821 A JP 2001316821A
Authority
JP
Japan
Prior art keywords
silicon carbide
independent
article according
cvd
resistivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001050352A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001316821A5 (enExample
Inventor
Jitendra S Goela
ジテンドラ・エス・ゴエラ
Michael A Pickering
マイケル・エー・ピカリング
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials International LLC
Original Assignee
Shipley Co LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shipley Co LLC filed Critical Shipley Co LLC
Publication of JP2001316821A publication Critical patent/JP2001316821A/ja
Publication of JP2001316821A5 publication Critical patent/JP2001316821A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
JP2001050352A 2000-02-24 2001-02-26 低抵抗率炭化珪素 Pending JP2001316821A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US18476600P 2000-02-24 2000-02-24
US60/184766 2000-02-24

Publications (2)

Publication Number Publication Date
JP2001316821A true JP2001316821A (ja) 2001-11-16
JP2001316821A5 JP2001316821A5 (enExample) 2007-04-19

Family

ID=22678255

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001050352A Pending JP2001316821A (ja) 2000-02-24 2001-02-26 低抵抗率炭化珪素

Country Status (6)

Country Link
US (1) US7018947B2 (enExample)
EP (1) EP1127955B1 (enExample)
JP (1) JP2001316821A (enExample)
KR (1) KR100760342B1 (enExample)
DE (1) DE60139359D1 (enExample)
TW (1) TW554065B (enExample)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007513257A (ja) * 2003-12-05 2007-05-24 モーガン・アドヴァンスド・セラミックス・インコーポレイテッド 化学蒸着によって形成される自立型炭化ケイ素製品及びそれらを製造するための方法
JP2008252045A (ja) * 2007-03-30 2008-10-16 Mitsui Eng & Shipbuild Co Ltd プラズマ処置装置用電極
US8114505B2 (en) 2003-12-05 2012-02-14 Morgan Advanced Ceramics, Inc. Free-standing silicon carbide articles formed by chemical vapor deposition and methods for their manufacture
JP2016540110A (ja) * 2013-09-27 2016-12-22 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド イオン注入装置のＳｉＣコーティング
JP2018035009A (ja) * 2016-08-29 2018-03-08 京セラ株式会社 ＳｉＣ材料およびそれを用いた半導体製造装置用部材
JP2019112241A (ja) * 2017-12-21 2019-07-11 國家中山科學研究院 特定形状の炭化ケイ素の育成装置
WO2021060516A1 (ja) 2019-09-27 2021-04-01 東海カーボン株式会社 多結晶ＳｉＣ成形体
WO2021060515A1 (ja) 2019-09-27 2021-04-01 東海カーボン株式会社 多結晶ＳｉＣ成形体及びその製造方法
WO2021060518A1 (ja) 2019-09-27 2021-04-01 東海カーボン株式会社 多結晶ＳｉＣ成形体
WO2023067876A1 (ja) 2021-10-20 2023-04-27 株式会社サイコックス 多結晶炭化珪素基板の製造方法
WO2023171270A1 (ja) 2022-03-07 2023-09-14 東海カーボン株式会社 多結晶ＳｉＣ成形体及びその製造方法
WO2024134941A1 (ja) 2022-12-22 2024-06-27 東海カーボン株式会社 多結晶ＳｉＣ成形体及びその製造方法
WO2025047028A1 (ja) 2023-08-25 2025-03-06 東海カーボン株式会社 多結晶ＳｉＣ成形体

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6939821B2 (en) * 2000-02-24 2005-09-06 Shipley Company, L.L.C. Low resistivity silicon carbide
JP2002047066A (ja) * 2000-08-02 2002-02-12 Tokai Carbon Co Ltd ＳｉＣ成形体およびその製造方法
EP1205573A1 (en) * 2000-11-10 2002-05-15 Shipley Company LLC Silicon carbide with high thermal conductivity
US8202621B2 (en) * 2001-09-22 2012-06-19 Rohm And Haas Company Opaque low resistivity silicon carbide
KR100973464B1 (ko) * 2003-02-03 2010-08-02 주식회사 티포엘 게비온(gebion) 철망 연속 자동 제조장치
US7261919B2 (en) * 2003-11-18 2007-08-28 Flx Micro, Inc. Silicon carbide and other films and method of deposition
US7501765B2 (en) * 2004-10-01 2009-03-10 Illinois Tool Works Inc. Emitter electrodes formed of chemical vapor deposition silicon carbide
CN100430516C (zh) * 2005-03-18 2008-11-05 西北工业大学 碳/碳复合材料表面碳化硅纳米线的制备方法
US8105649B1 (en) 2007-08-09 2012-01-31 Imaging Systems Technology Fabrication of silicon carbide shell
US7935618B2 (en) 2007-09-26 2011-05-03 Micron Technology, Inc. Sputtering-less ultra-low energy ion implantation
CN103723731B (zh) * 2013-04-22 2015-10-21 太仓派欧技术咨询服务有限公司 一种复合式化学气相沉积碳化硅装置
FR3034775B1 (fr) 2015-04-13 2018-09-28 Hutchinson Materiau pour le stockage thermique
FR3034771B1 (fr) * 2015-04-13 2019-04-19 Hutchinson Materiaux conducteurs thermiques et/ou electriques et leur procede de preparation
KR20220149760A (ko) 2018-06-01 2022-11-08 (주) 디에스테크노 식각 특성이 향상된 화학기상증착 실리콘 카바이드 벌크
US11319629B2 (en) 2018-08-06 2022-05-03 Advanced Silicon Carbide Materials Method of making composite articles from silicon carbide
CN117051374A (zh) * 2023-08-18 2023-11-14 北京亦盛精密半导体有限公司 一种调节cvd碳化硅中氮含量的方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03252307A (ja) * 1990-02-27 1991-11-11 Showa Denko Kk 多結晶炭化珪素
JP2001220237A (ja) * 2000-02-14 2001-08-14 Asahi Glass Co Ltd 炭化ケイ素体およびその製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4772498A (en) 1986-11-20 1988-09-20 Air Products And Chemicals, Inc. Silicon carbide capillaries
US5093039A (en) * 1989-01-30 1992-03-03 Kazunori Kijima Highly pure sintered carbide with high electric conductivity and process of producing the same
US5071596A (en) 1989-10-23 1991-12-10 Cvd Incorporated Fabrication of lightweight ceramic mirrors by means of a chemical vapor deposition process
US5374412A (en) * 1992-07-31 1994-12-20 Cvd, Inc. Highly polishable, highly thermally conductive silicon carbide
CA2099788A1 (en) 1992-07-31 1994-02-01 Michael A. Pickering Ultra pure silicon carbide and high temperature semiconductor processing equipment made therefrom
TW337513B (en) * 1992-11-23 1998-08-01 Cvd Inc Chemical vapor deposition-produced silicon carbide having improved properties and preparation process thereof
US5332601A (en) * 1992-12-10 1994-07-26 The United States As Represented By The United States Department Of Energy Method of fabricating silicon carbide coatings on graphite surfaces
US5354580A (en) 1993-06-08 1994-10-11 Cvd Incorporated Triangular deposition chamber for a vapor deposition system
EP0792853B1 (en) * 1996-02-29 2001-04-25 Bridgestone Corporation Process for making a silicon carbide sintered body
US5683028A (en) 1996-05-03 1997-11-04 Cvd, Incorporated Bonding of silicon carbide components
US6090733A (en) * 1997-08-27 2000-07-18 Bridgestone Corporation Sintered silicon carbide and method for producing the same
JPH1167427A (ja) * 1997-08-27 1999-03-09 Bridgestone Corp ヒーター部品
JPH1179846A (ja) * 1997-09-01 1999-03-23 Tokai Carbon Co Ltd 炭化珪素成形体
JP2002047066A (ja) * 2000-08-02 2002-02-12 Tokai Carbon Co Ltd ＳｉＣ成形体およびその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03252307A (ja) * 1990-02-27 1991-11-11 Showa Denko Kk 多結晶炭化珪素
JP2001220237A (ja) * 2000-02-14 2001-08-14 Asahi Glass Co Ltd 炭化ケイ素体およびその製造方法

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007513257A (ja) * 2003-12-05 2007-05-24 モーガン・アドヴァンスド・セラミックス・インコーポレイテッド 化学蒸着によって形成される自立型炭化ケイ素製品及びそれらを製造するための方法
US8114505B2 (en) 2003-12-05 2012-02-14 Morgan Advanced Ceramics, Inc. Free-standing silicon carbide articles formed by chemical vapor deposition and methods for their manufacture
JP2008252045A (ja) * 2007-03-30 2008-10-16 Mitsui Eng & Shipbuild Co Ltd プラズマ処置装置用電極
JP2016540110A (ja) * 2013-09-27 2016-12-22 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド イオン注入装置のＳｉＣコーティング
JP2018035009A (ja) * 2016-08-29 2018-03-08 京セラ株式会社 ＳｉＣ材料およびそれを用いた半導体製造装置用部材
JP2019112241A (ja) * 2017-12-21 2019-07-11 國家中山科學研究院 特定形状の炭化ケイ素の育成装置
WO2021060518A1 (ja) 2019-09-27 2021-04-01 東海カーボン株式会社 多結晶ＳｉＣ成形体
WO2021060515A1 (ja) 2019-09-27 2021-04-01 東海カーボン株式会社 多結晶ＳｉＣ成形体及びその製造方法
WO2021060516A1 (ja) 2019-09-27 2021-04-01 東海カーボン株式会社 多結晶ＳｉＣ成形体
KR20220068992A (ko) 2019-09-27 2022-05-26 도까이 카본 가부시끼가이샤 다결정 SiC 성형체 및 그 제조 방법
KR20220074864A (ko) 2019-09-27 2022-06-03 도까이 카본 가부시끼가이샤 다결정 SiC 성형체
WO2023067876A1 (ja) 2021-10-20 2023-04-27 株式会社サイコックス 多結晶炭化珪素基板の製造方法
KR20240088896A (ko) 2021-10-20 2024-06-20 가부시키가이샤 사이콕스 다결정 탄화규소 기판의 제조 방법
WO2023171270A1 (ja) 2022-03-07 2023-09-14 東海カーボン株式会社 多結晶ＳｉＣ成形体及びその製造方法
KR20240160010A (ko) 2022-03-07 2024-11-08 도까이 카본 가부시끼가이샤 다결정 SiC 성형체 및 그 제조 방법
WO2024134941A1 (ja) 2022-12-22 2024-06-27 東海カーボン株式会社 多結晶ＳｉＣ成形体及びその製造方法
KR20250022867A (ko) 2022-12-22 2025-02-17 도까이 카본 가부시끼가이샤 다결정 SiC 성형체 및 그의 제조 방법
WO2025047028A1 (ja) 2023-08-25 2025-03-06 東海カーボン株式会社 多結晶ＳｉＣ成形体

Also Published As

Publication number Publication date
KR100760342B1 (ko) 2007-09-20
KR20010085556A (ko) 2001-09-07
EP1127955A1 (en) 2001-08-29
DE60139359D1 (de) 2009-09-10
TW554065B (en) 2003-09-21
EP1127955B1 (en) 2009-07-29
US20020004444A1 (en) 2002-01-10
US7018947B2 (en) 2006-03-28

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