TW554065B - Low resistivity silicon carbide - Google Patents
Low resistivity silicon carbide Download PDFInfo
- Publication number
- TW554065B TW554065B TW090104247A TW90104247A TW554065B TW 554065 B TW554065 B TW 554065B TW 090104247 A TW090104247 A TW 090104247A TW 90104247 A TW90104247 A TW 90104247A TW 554065 B TW554065 B TW 554065B
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- Prior art keywords
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- scope
- further characterized
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- Prior art date
Links
- 229910010271 silicon carbide Inorganic materials 0.000 title abstract description 47
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title abstract description 41
- 239000000126 substance Substances 0.000 claims abstract description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 48
- 229910052757 nitrogen Inorganic materials 0.000 claims description 23
- 239000011573 trace mineral Substances 0.000 claims description 8
- 235000013619 trace mineral Nutrition 0.000 claims description 8
- 238000005452 bending Methods 0.000 claims description 5
- 230000002079 cooperative effect Effects 0.000 claims description 5
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 3
- 230000000593 degrading effect Effects 0.000 abstract 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 23
- 239000007789 gas Substances 0.000 description 17
- 238000000151 deposition Methods 0.000 description 15
- 230000008021 deposition Effects 0.000 description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 229910002804 graphite Inorganic materials 0.000 description 14
- 239000010439 graphite Substances 0.000 description 14
- 238000005229 chemical vapour deposition Methods 0.000 description 13
- 239000012535 impurity Substances 0.000 description 13
- 239000003153 chemical reaction reagent Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 10
- 239000002243 precursor Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 229910052786 argon Inorganic materials 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000000523 sample Substances 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000013049 sediment Substances 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000010494 dissociation reaction Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000003763 carbonization Methods 0.000 description 2
- 238000000200 discharge mass spectrometry Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000008246 gaseous mixture Substances 0.000 description 2
- 238000001036 glow-discharge mass spectrometry Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 238000009740 moulding (composite fabrication) Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- LPEKGGXMPWTOCB-UHFFFAOYSA-N 8beta-(2,3-epoxy-2-methylbutyryloxy)-14-acetoxytithifolin Natural products COC(=O)C(C)O LPEKGGXMPWTOCB-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 241001674048 Phthiraptera Species 0.000 description 1
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 150000001720 carbohydrates Chemical class 0.000 description 1
- 235000014633 carbohydrates Nutrition 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 239000012707 chemical precursor Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 208000018459 dissociative disease Diseases 0.000 description 1
- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- UKAJDOBPPOAZSS-UHFFFAOYSA-N ethyl(trimethyl)silane Chemical compound CC[Si](C)(C)C UKAJDOBPPOAZSS-UHFFFAOYSA-N 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000012705 liquid precursor Substances 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 229940057867 methyl lactate Drugs 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052704 radon Inorganic materials 0.000 description 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US18476600P | 2000-02-24 | 2000-02-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW554065B true TW554065B (en) | 2003-09-21 |
Family
ID=22678255
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090104247A TW554065B (en) | 2000-02-24 | 2001-03-20 | Low resistivity silicon carbide |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7018947B2 (enExample) |
| EP (1) | EP1127955B1 (enExample) |
| JP (1) | JP2001316821A (enExample) |
| KR (1) | KR100760342B1 (enExample) |
| DE (1) | DE60139359D1 (enExample) |
| TW (1) | TW554065B (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103723731A (zh) * | 2013-04-22 | 2014-04-16 | 太仓派欧技术咨询服务有限公司 | 一种复合式化学气相沉积碳化硅装置 |
| TWI894525B (zh) * | 2022-03-07 | 2025-08-21 | 日商東海碳素股份有限公司 | 多結晶碳化矽成形體及其製造方法 |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6939821B2 (en) * | 2000-02-24 | 2005-09-06 | Shipley Company, L.L.C. | Low resistivity silicon carbide |
| JP2002047066A (ja) * | 2000-08-02 | 2002-02-12 | Tokai Carbon Co Ltd | ＳｉＣ成形体およびその製造方法 |
| EP1205573A1 (en) * | 2000-11-10 | 2002-05-15 | Shipley Company LLC | Silicon carbide with high thermal conductivity |
| US8202621B2 (en) * | 2001-09-22 | 2012-06-19 | Rohm And Haas Company | Opaque low resistivity silicon carbide |
| KR100973464B1 (ko) * | 2003-02-03 | 2010-08-02 | 주식회사 티포엘 | 게비온(gebion) 철망 연속 자동 제조장치 |
| US7261919B2 (en) * | 2003-11-18 | 2007-08-28 | Flx Micro, Inc. | Silicon carbide and other films and method of deposition |
| US8114505B2 (en) * | 2003-12-05 | 2012-02-14 | Morgan Advanced Ceramics, Inc. | Free-standing silicon carbide articles formed by chemical vapor deposition and methods for their manufacture |
| US20050123713A1 (en) * | 2003-12-05 | 2005-06-09 | Forrest David T. | Articles formed by chemical vapor deposition and methods for their manufacture |
| US7501765B2 (en) * | 2004-10-01 | 2009-03-10 | Illinois Tool Works Inc. | Emitter electrodes formed of chemical vapor deposition silicon carbide |
| CN100430516C (zh) * | 2005-03-18 | 2008-11-05 | 西北工业大学 | 碳/碳复合材料表面碳化硅纳米线的制备方法 |
| JP2008252045A (ja) * | 2007-03-30 | 2008-10-16 | Mitsui Eng & Shipbuild Co Ltd | プラズマ処置装置用電極 |
| US8105649B1 (en) | 2007-08-09 | 2012-01-31 | Imaging Systems Technology | Fabrication of silicon carbide shell |
| US7935618B2 (en) | 2007-09-26 | 2011-05-03 | Micron Technology, Inc. | Sputtering-less ultra-low energy ion implantation |
| US9384937B2 (en) * | 2013-09-27 | 2016-07-05 | Varian Semiconductor Equipment Associates, Inc. | SiC coating in an ion implanter |
| FR3034775B1 (fr) | 2015-04-13 | 2018-09-28 | Hutchinson | Materiau pour le stockage thermique |
| FR3034771B1 (fr) * | 2015-04-13 | 2019-04-19 | Hutchinson | Materiaux conducteurs thermiques et/ou electriques et leur procede de preparation |
| JP2018035009A (ja) * | 2016-08-29 | 2018-03-08 | 京セラ株式会社 | ＳｉＣ材料およびそれを用いた半導体製造装置用部材 |
| JP6609300B2 (ja) * | 2017-12-21 | 2019-11-20 | 國家中山科學研究院 | 特定形状の炭化ケイ素の育成装置 |
| KR20220149760A (ko) | 2018-06-01 | 2022-11-08 | (주) 디에스테크노 | 식각 특성이 향상된 화학기상증착 실리콘 카바이드 벌크 |
| US11319629B2 (en) | 2018-08-06 | 2022-05-03 | Advanced Silicon Carbide Materials | Method of making composite articles from silicon carbide |
| JP7239432B2 (ja) | 2019-09-27 | 2023-03-14 | 東海カーボン株式会社 | 多結晶ＳｉＣ成形体の製造方法 |
| JP7155089B2 (ja) | 2019-09-27 | 2022-10-18 | 東海カーボン株式会社 | 多結晶ＳｉＣ成形体 |
| JP7077288B2 (ja) | 2019-09-27 | 2022-05-30 | 東海カーボン株式会社 | 多結晶ＳｉＣ成形体 |
| JP2023061509A (ja) | 2021-10-20 | 2023-05-02 | 株式会社サイコックス | 多結晶炭化珪素基板の製造方法 |
| CN119585464A (zh) | 2022-12-22 | 2025-03-07 | 东海炭素株式会社 | 多晶SiC成型体及其制造方法 |
| CN117051374A (zh) * | 2023-08-18 | 2023-11-14 | 北京亦盛精密半导体有限公司 | 一种调节cvd碳化硅中氮含量的方法 |
| CN119895074A (zh) | 2023-08-25 | 2025-04-25 | 东海炭素株式会社 | 多晶SiC成型体 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4772498A (en) | 1986-11-20 | 1988-09-20 | Air Products And Chemicals, Inc. | Silicon carbide capillaries |
| US5093039A (en) * | 1989-01-30 | 1992-03-03 | Kazunori Kijima | Highly pure sintered carbide with high electric conductivity and process of producing the same |
| US5071596A (en) | 1989-10-23 | 1991-12-10 | Cvd Incorporated | Fabrication of lightweight ceramic mirrors by means of a chemical vapor deposition process |
| JPH03252307A (ja) * | 1990-02-27 | 1991-11-11 | Showa Denko Kk | 多結晶炭化珪素 |
| US5374412A (en) * | 1992-07-31 | 1994-12-20 | Cvd, Inc. | Highly polishable, highly thermally conductive silicon carbide |
| CA2099788A1 (en) | 1992-07-31 | 1994-02-01 | Michael A. Pickering | Ultra pure silicon carbide and high temperature semiconductor processing equipment made therefrom |
| TW337513B (en) * | 1992-11-23 | 1998-08-01 | Cvd Inc | Chemical vapor deposition-produced silicon carbide having improved properties and preparation process thereof |
| US5332601A (en) * | 1992-12-10 | 1994-07-26 | The United States As Represented By The United States Department Of Energy | Method of fabricating silicon carbide coatings on graphite surfaces |
| US5354580A (en) | 1993-06-08 | 1994-10-11 | Cvd Incorporated | Triangular deposition chamber for a vapor deposition system |
| EP0792853B1 (en) * | 1996-02-29 | 2001-04-25 | Bridgestone Corporation | Process for making a silicon carbide sintered body |
| US5683028A (en) | 1996-05-03 | 1997-11-04 | Cvd, Incorporated | Bonding of silicon carbide components |
| US6090733A (en) * | 1997-08-27 | 2000-07-18 | Bridgestone Corporation | Sintered silicon carbide and method for producing the same |
| JPH1167427A (ja) * | 1997-08-27 | 1999-03-09 | Bridgestone Corp | ヒーター部品 |
| JPH1179846A (ja) * | 1997-09-01 | 1999-03-23 | Tokai Carbon Co Ltd | 炭化珪素成形体 |
| JP4595153B2 (ja) * | 2000-02-14 | 2010-12-08 | 旭硝子株式会社 | 炭化ケイ素体およびその製造方法 |
| JP2002047066A (ja) * | 2000-08-02 | 2002-02-12 | Tokai Carbon Co Ltd | ＳｉＣ成形体およびその製造方法 |
-
2001
- 2001-02-21 US US09/790,442 patent/US7018947B2/en not_active Expired - Lifetime
- 2001-02-22 EP EP01301614A patent/EP1127955B1/en not_active Expired - Lifetime
- 2001-02-22 DE DE60139359T patent/DE60139359D1/de not_active Expired - Lifetime
- 2001-02-24 KR KR1020010009425A patent/KR100760342B1/ko not_active Expired - Lifetime
- 2001-02-26 JP JP2001050352A patent/JP2001316821A/ja active Pending
- 2001-03-20 TW TW090104247A patent/TW554065B/zh not_active IP Right Cessation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103723731A (zh) * | 2013-04-22 | 2014-04-16 | 太仓派欧技术咨询服务有限公司 | 一种复合式化学气相沉积碳化硅装置 |
| CN103723731B (zh) * | 2013-04-22 | 2015-10-21 | 太仓派欧技术咨询服务有限公司 | 一种复合式化学气相沉积碳化硅装置 |
| TWI894525B (zh) * | 2022-03-07 | 2025-08-21 | 日商東海碳素股份有限公司 | 多結晶碳化矽成形體及其製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100760342B1 (ko) | 2007-09-20 |
| KR20010085556A (ko) | 2001-09-07 |
| EP1127955A1 (en) | 2001-08-29 |
| DE60139359D1 (de) | 2009-09-10 |
| JP2001316821A (ja) | 2001-11-16 |
| EP1127955B1 (en) | 2009-07-29 |
| US20020004444A1 (en) | 2002-01-10 |
| US7018947B2 (en) | 2006-03-28 |
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