JP2001291720A - 半導体集積回路装置および半導体集積回路装置の製造方法 - Google Patents

半導体集積回路装置および半導体集積回路装置の製造方法

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Publication number
JP2001291720A
JP2001291720A JP2000104015A JP2000104015A JP2001291720A JP 2001291720 A JP2001291720 A JP 2001291720A JP 2000104015 A JP2000104015 A JP 2000104015A JP 2000104015 A JP2000104015 A JP 2000104015A JP 2001291720 A JP2001291720 A JP 2001291720A
Authority
JP
Japan
Prior art keywords
integrated circuit
circuit device
semiconductor integrated
film
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000104015A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001291720A5 (https=
Inventor
Junji Noguchi
純司 野口
Tadashi Ohashi
直史 大橋
Tatsuyuki Saito
達之 齋藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2000104015A priority Critical patent/JP2001291720A/ja
Priority to TW090107703A priority patent/TW531892B/zh
Priority to KR1020010018003A priority patent/KR100698987B1/ko
Priority to US09/825,946 priority patent/US6764950B2/en
Publication of JP2001291720A publication Critical patent/JP2001291720A/ja
Priority to US10/811,927 priority patent/US7232757B2/en
Publication of JP2001291720A5 publication Critical patent/JP2001291720A5/ja
Priority to US11/790,760 priority patent/US20080132059A1/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/277—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a planarisation of conductive layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0472—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/037—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics the barrier, adhesion or liner layers being on top of a main fill metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/055—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by formation methods other than physical vapour deposition [PVD], chemical vapour deposition [CVD] or liquid deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/064—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/076—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/077—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers on sidewalls or on top surfaces of conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H10W20/085—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures involving intermediate temporary filling with material
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/096—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by contacting with gases, liquids or plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2000104015A 2000-04-05 2000-04-05 半導体集積回路装置および半導体集積回路装置の製造方法 Pending JP2001291720A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2000104015A JP2001291720A (ja) 2000-04-05 2000-04-05 半導体集積回路装置および半導体集積回路装置の製造方法
TW090107703A TW531892B (en) 2000-04-05 2001-03-30 Semiconductor integrated circuit device and fabrication method for semiconductor integrated circuit device
KR1020010018003A KR100698987B1 (ko) 2000-04-05 2001-04-04 반도체 집적 회로 장치의 제조 방법
US09/825,946 US6764950B2 (en) 2000-04-05 2001-04-05 Fabrication method for semiconductor integrated circuit device
US10/811,927 US7232757B2 (en) 2000-04-05 2004-03-30 Semiconductor integrated circuit device and fabrication method for semiconductor integrated circuit device
US11/790,760 US20080132059A1 (en) 2000-04-05 2007-04-27 Semiconductor integrated circuit device and fabrication method for semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000104015A JP2001291720A (ja) 2000-04-05 2000-04-05 半導体集積回路装置および半導体集積回路装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007310344A Division JP2008141204A (ja) 2007-11-30 2007-11-30 半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
JP2001291720A true JP2001291720A (ja) 2001-10-19
JP2001291720A5 JP2001291720A5 (https=) 2006-03-23

Family

ID=18617635

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000104015A Pending JP2001291720A (ja) 2000-04-05 2000-04-05 半導体集積回路装置および半導体集積回路装置の製造方法

Country Status (4)

Country Link
US (3) US6764950B2 (https=)
JP (1) JP2001291720A (https=)
KR (1) KR100698987B1 (https=)
TW (1) TW531892B (https=)

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JP2002246391A (ja) * 2001-02-21 2002-08-30 Nec Corp 半導体装置の製造方法
JP2004363516A (ja) * 2003-06-09 2004-12-24 Sony Corp 埋め込み配線の形成方法
US6858549B2 (en) 2001-12-27 2005-02-22 Matsushita Electric Industrial Co., Ltd. Method for forming wiring structure
US6881660B2 (en) 2001-12-27 2005-04-19 Matsushita Electric Industrial Co., Ltd. Method for forming wiring structure
US6919267B2 (en) 2001-12-27 2005-07-19 Matsushita Electric Industrial Co., Ltd. Method for forming wiring structure
US7323781B2 (en) 2003-03-25 2008-01-29 Renesas Technology Corp. Semiconductor device and manufacturing method thereof
JP2008193120A (ja) * 2008-04-23 2008-08-21 Fujitsu Ltd 絶縁膜形成方法
JP2008545253A (ja) * 2005-05-10 2008-12-11 ラム リサーチ コーポレーション 通常の低ｋ誘電性材料および／または多孔質の低ｋ誘電性材料の存在下でのレジスト剥離のための方法
US7687917B2 (en) 2002-05-08 2010-03-30 Nec Electronics Corporation Single damascene structure semiconductor device having silicon-diffused metal wiring layer
US8012871B2 (en) 2002-10-17 2011-09-06 Renesas Electronics Corporation Semiconductor device and manufacturing method thereof
JP2012060149A (ja) * 2007-07-27 2012-03-22 Siltronic Ag 半導体材料から構成された基板を研磨する方法
JP2014112692A (ja) * 2013-12-27 2014-06-19 Jx Nippon Mining & Metals Corp 半導体用銅合金配線及びスパッタリングターゲット並びに半導体用銅合金配線の形成方法
JP2015128174A (ja) * 2002-05-17 2015-07-09 株式会社半導体エネルギー研究所 半導体装置
JP2016219620A (ja) * 2015-05-21 2016-12-22 ルネサスエレクトロニクス株式会社 半導体装置の製造方法およびそれに用いられるｆｏｕｐ
JP2017126802A (ja) * 2017-04-24 2017-07-20 ルネサスエレクトロニクス株式会社 半導体装置

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JP4554011B2 (ja) * 1999-08-10 2010-09-29 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
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US6727158B2 (en) * 2001-11-08 2004-04-27 Micron Technology, Inc. Structure and method for forming a faceted opening and a layer filling therein
JP4340040B2 (ja) * 2002-03-28 2009-10-07 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
JP2003318140A (ja) * 2002-04-26 2003-11-07 Applied Materials Inc 研磨方法及び装置
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JP2005050903A (ja) * 2003-07-30 2005-02-24 Toshiba Corp 半導体装置およびその製造方法
US20050054206A1 (en) * 2003-09-04 2005-03-10 Nanya Technology Corporation Etching method and recipe for forming high aspect ratio contact hole
US20060172526A1 (en) * 2003-10-16 2006-08-03 United Microelectronics Corp. Method for preventing edge peeling defect
US7341946B2 (en) * 2003-11-10 2008-03-11 Novellus Systems, Inc. Methods for the electrochemical deposition of copper onto a barrier layer of a work piece
US7180195B2 (en) * 2003-12-17 2007-02-20 Intel Corporation Method and apparatus for improved power routing
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JP4703129B2 (ja) * 2004-05-06 2011-06-15 富士通セミコンダクター株式会社 半導体装置およびその製造方法、設計方法
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US20060194427A1 (en) * 2005-02-25 2006-08-31 Yi-Ching Wu Interconnecting process and method for fabricating complex dielectric barrier layer
US7348276B2 (en) * 2005-03-30 2008-03-25 Fujitsu, Limited Fabrication process of semiconductor device and polishing method
JP4956919B2 (ja) * 2005-06-08 2012-06-20 株式会社日立製作所 半導体装置およびその製造方法
KR101168728B1 (ko) * 2005-07-15 2012-07-26 삼성전자주식회사 배선 구조와 배선 형성 방법 및 박막 트랜지스터 기판과 그제조 방법
JP4964442B2 (ja) * 2005-08-10 2012-06-27 三菱電機株式会社 薄膜トランジスタおよびその製造方法
US7348238B2 (en) * 2005-08-22 2008-03-25 Micron Technology, Inc. Bottom electrode for memory device and method of forming the same
KR100741882B1 (ko) * 2005-12-29 2007-07-23 동부일렉트로닉스 주식회사 고전압 소자 및 그 제조방법
US7378339B2 (en) * 2006-03-30 2008-05-27 Freescale Semiconductor, Inc. Barrier for use in 3-D integration of circuits
US7510967B2 (en) * 2006-05-29 2009-03-31 Nec Electronics Corporation Method for manufacturing semiconductor device
WO2008111125A1 (ja) * 2007-03-13 2008-09-18 Fujitsu Limited 半導体装置および半導体装置の製造方法
US20080299780A1 (en) * 2007-06-01 2008-12-04 Uv Tech Systems, Inc. Method and apparatus for laser oxidation and reduction
US7758403B2 (en) * 2007-11-16 2010-07-20 Hitachi Global Storage Technologies Netherlands B.V. System, method and apparatus for lapping workpieces with soluble abrasives
US8517990B2 (en) * 2007-12-18 2013-08-27 Hospira, Inc. User interface improvements for medical devices
US8138041B2 (en) * 2008-06-12 2012-03-20 International Business Machines Corporation In-situ silicon cap for metal gate electrode
CN102077323A (zh) * 2008-07-03 2011-05-25 株式会社神户制钢所 配线结构、薄膜晶体管基板及其制造方法、以及显示装置
CN102203935A (zh) * 2008-10-27 2011-09-28 Nxp股份有限公司 生物兼容电极
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