JP2001168193A5 - - Google Patents

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Publication number
JP2001168193A5
JP2001168193A5 JP2000319053A JP2000319053A JP2001168193A5 JP 2001168193 A5 JP2001168193 A5 JP 2001168193A5 JP 2000319053 A JP2000319053 A JP 2000319053A JP 2000319053 A JP2000319053 A JP 2000319053A JP 2001168193 A5 JP2001168193 A5 JP 2001168193A5
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JP
Japan
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layer
silicon oxide
low
dielectric material
carbon
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JP2000319053A
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English (en)
Japanese (ja)
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JP4731670B2 (ja
JP2001168193A (ja
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Priority claimed from US09/426,056 external-priority patent/US6391795B1/en
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Publication of JP2001168193A publication Critical patent/JP2001168193A/ja
Publication of JP2001168193A5 publication Critical patent/JP2001168193A5/ja
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Publication of JP4731670B2 publication Critical patent/JP4731670B2/ja
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JP2000319053A 1999-10-22 2000-10-19 バイア被毒を緩和しつつ金属ライン間にボイドフリー低ｋ誘電性材料を提供する集積回路構造のための低Ｋ誘電性複合材層 Expired - Fee Related JP4731670B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/426,056 US6391795B1 (en) 1999-10-22 1999-10-22 Low k dielectric composite layer for intergrated circuit structure which provides void-free low k dielectric material between metal lines while mitigating via poisoning
US09/426056 1999-10-22

Publications (3)

Publication Number Publication Date
JP2001168193A JP2001168193A (ja) 2001-06-22
JP2001168193A5 true JP2001168193A5 (enExample) 2007-11-22
JP4731670B2 JP4731670B2 (ja) 2011-07-27

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JP2000319053A Expired - Fee Related JP4731670B2 (ja) 1999-10-22 2000-10-19 バイア被毒を緩和しつつ金属ライン間にボイドフリー低ｋ誘電性材料を提供する集積回路構造のための低Ｋ誘電性複合材層

Country Status (3)

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US (2) US6391795B1 (enExample)
EP (1) EP1094508B1 (enExample)
JP (1) JP4731670B2 (enExample)

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