JP2001127174A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JP2001127174A
JP2001127174A JP30227099A JP30227099A JP2001127174A JP 2001127174 A JP2001127174 A JP 2001127174A JP 30227099 A JP30227099 A JP 30227099A JP 30227099 A JP30227099 A JP 30227099A JP 2001127174 A JP2001127174 A JP 2001127174A
Authority
JP
Japan
Prior art keywords
contact hole
impurity region
impurity
semiconductor device
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP30227099A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001127174A5 (enExample
Inventor
Motoi Ashida
基 芦田
Koichi Kamiya
好一 神谷
Eiji Hamasuna
栄二 浜砂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP30227099A priority Critical patent/JP2001127174A/ja
Priority to DE10019708A priority patent/DE10019708A1/de
Priority to US09/553,334 priority patent/US6531747B1/en
Priority to KR10-2000-0021602A priority patent/KR100377082B1/ko
Priority to CN00118811A priority patent/CN1305228A/zh
Priority to TW089108197A priority patent/TW478075B/zh
Priority to CN200910004381XA priority patent/CN101582427B/zh
Publication of JP2001127174A publication Critical patent/JP2001127174A/ja
Publication of JP2001127174A5 publication Critical patent/JP2001127174A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element

Landscapes

  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP30227099A 1999-10-25 1999-10-25 半導体装置 Pending JP2001127174A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP30227099A JP2001127174A (ja) 1999-10-25 1999-10-25 半導体装置
DE10019708A DE10019708A1 (de) 1999-10-25 2000-04-20 Halbleitervorrichtung
US09/553,334 US6531747B1 (en) 1999-10-25 2000-04-20 Semiconductor device
KR10-2000-0021602A KR100377082B1 (ko) 1999-10-25 2000-04-24 반도체 장치
CN00118811A CN1305228A (zh) 1999-10-25 2000-04-29 半导体器件
TW089108197A TW478075B (en) 1999-10-25 2000-04-29 Semiconductor device
CN200910004381XA CN101582427B (zh) 1999-10-25 2000-04-29 半导体器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30227099A JP2001127174A (ja) 1999-10-25 1999-10-25 半導体装置

Publications (2)

Publication Number Publication Date
JP2001127174A true JP2001127174A (ja) 2001-05-11
JP2001127174A5 JP2001127174A5 (enExample) 2006-11-30

Family

ID=17906998

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30227099A Pending JP2001127174A (ja) 1999-10-25 1999-10-25 半導体装置

Country Status (6)

Country Link
US (1) US6531747B1 (enExample)
JP (1) JP2001127174A (enExample)
KR (1) KR100377082B1 (enExample)
CN (2) CN101582427B (enExample)
DE (1) DE10019708A1 (enExample)
TW (1) TW478075B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100464416B1 (ko) * 2002-05-14 2005-01-03 삼성전자주식회사 증가된 유효 채널 길이를 가지는 반도체 소자의 제조 방법
KR100549014B1 (ko) * 2004-07-21 2006-02-02 삼성전자주식회사 스페이서 패턴을 갖는 반도체 장치들 및 그 형성방법들
DE102004047751B3 (de) * 2004-09-30 2006-05-04 Infineon Technologies Ag Verfahren zur Herstellung von Transistorstrukturen für DRAM-Halbleiterbauelemente
KR100764737B1 (ko) * 2006-02-09 2007-10-08 삼성전자주식회사 에스램 셀 및 그 형성 방법
JP2010010260A (ja) * 2008-06-25 2010-01-14 Panasonic Corp 半導体記憶装置及びその製造方法
US9859286B2 (en) * 2014-12-23 2018-01-02 International Business Machines Corporation Low-drive current FinFET structure for improving circuit density of ratioed logic in SRAM devices
CN114156271A (zh) * 2015-04-30 2022-03-08 联华电子股份有限公司 静态随机存取存储器
CN111863069B (zh) * 2015-06-17 2022-05-10 联华电子股份有限公司 八晶体管静态随机存取存储器的布局图案与形成方法
KR102618350B1 (ko) * 2016-12-14 2023-12-28 삼성디스플레이 주식회사 디스플레이 장치
KR20210095277A (ko) * 2020-01-22 2021-08-02 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
US12363882B2 (en) * 2020-11-04 2025-07-15 Changxin Memory Technologies, Inc. Method of manufacturing semiconductor structure and semiconductor structure

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05283710A (ja) * 1991-12-06 1993-10-29 Intel Corp 高電圧ｍｏｓトランジスタ及びその製造方法
JPH0697192A (ja) * 1992-07-29 1994-04-08 Kawasaki Steel Corp 半導体装置及びその製造方法
JPH07202193A (ja) * 1993-12-30 1995-08-04 Nec Corp 半導体装置及びその製造方法
JPH09190983A (ja) * 1996-01-12 1997-07-22 Sony Corp 半導体装置の製造方法
JPH10163344A (ja) * 1996-12-05 1998-06-19 Hitachi Ltd 半導体集積回路装置およびその製造方法
JPH10223555A (ja) * 1997-02-12 1998-08-21 Nec Corp 半導体装置の製造方法
JPH1117026A (ja) * 1997-06-27 1999-01-22 Sony Corp 半導体記憶装置
JPH11186236A (ja) * 1997-12-24 1999-07-09 Mitsubishi Electric Corp エッチング方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0797626B2 (ja) 1987-10-31 1995-10-18 日本電気株式会社 Ｍｉｓ型半導体記憶装置
JPH07106452A (ja) 1993-10-04 1995-04-21 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2658844B2 (ja) 1993-12-16 1997-09-30 日本電気株式会社 半導体記憶装置
JP3259529B2 (ja) 1994-07-11 2002-02-25 ソニー株式会社 選択エッチング方法
US5763910A (en) * 1995-01-31 1998-06-09 Fujitsu Limited Semiconductor device having a through-hole formed on diffused layer by self-alignment
JP3795634B2 (ja) 1996-06-19 2006-07-12 株式会社東芝 半導体装置の製造方法
JP3525637B2 (ja) 1996-08-09 2004-05-10 株式会社デンソー 半導体装置
JPH1187653A (ja) * 1997-09-09 1999-03-30 Fujitsu Ltd 半導体装置およびその製造方法
JPH11121710A (ja) * 1997-10-09 1999-04-30 Fujitsu Ltd 半導体装置及びその製造方法
JPH11176833A (ja) 1997-12-10 1999-07-02 Mitsubishi Electric Corp 半導体装置及びその製造方法
JPH11233628A (ja) 1998-02-16 1999-08-27 Mitsubishi Electric Corp コンタクト構造の製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05283710A (ja) * 1991-12-06 1993-10-29 Intel Corp 高電圧ｍｏｓトランジスタ及びその製造方法
JPH0697192A (ja) * 1992-07-29 1994-04-08 Kawasaki Steel Corp 半導体装置及びその製造方法
JPH07202193A (ja) * 1993-12-30 1995-08-04 Nec Corp 半導体装置及びその製造方法
JPH09190983A (ja) * 1996-01-12 1997-07-22 Sony Corp 半導体装置の製造方法
JPH10163344A (ja) * 1996-12-05 1998-06-19 Hitachi Ltd 半導体集積回路装置およびその製造方法
JPH10223555A (ja) * 1997-02-12 1998-08-21 Nec Corp 半導体装置の製造方法
JPH1117026A (ja) * 1997-06-27 1999-01-22 Sony Corp 半導体記憶装置
JPH11186236A (ja) * 1997-12-24 1999-07-09 Mitsubishi Electric Corp エッチング方法

Also Published As

Publication number Publication date
KR100377082B1 (ko) 2003-03-26
TW478075B (en) 2002-03-01
DE10019708A1 (de) 2001-05-10
CN1305228A (zh) 2001-07-25
CN101582427A (zh) 2009-11-18
US6531747B1 (en) 2003-03-11
CN101582427B (zh) 2011-05-11
KR20010039584A (ko) 2001-05-15

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