JP2001067884A5 - - Google Patents

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Publication number
JP2001067884A5
JP2001067884A5 JP1999246327A JP24632799A JP2001067884A5 JP 2001067884 A5 JP2001067884 A5 JP 2001067884A5 JP 1999246327 A JP1999246327 A JP 1999246327A JP 24632799 A JP24632799 A JP 24632799A JP 2001067884 A5 JP2001067884 A5 JP 2001067884A5
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JP
Japan
Prior art keywords
memory cell
storage device
semiconductor storage
reached
volatile semiconductor
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1999246327A
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English (en)
Japanese (ja)
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JP2001067884A (ja
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Publication date
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Priority to JP24632799A priority Critical patent/JP2001067884A/ja
Priority claimed from JP24632799A external-priority patent/JP2001067884A/ja
Priority to US09/645,878 priority patent/US6243290B1/en
Priority to TW089117561A priority patent/TW490671B/zh
Priority to KR1020000050653A priority patent/KR100731237B1/ko
Publication of JP2001067884A publication Critical patent/JP2001067884A/ja
Publication of JP2001067884A5 publication Critical patent/JP2001067884A5/ja
Pending legal-status Critical Current

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JP24632799A 1999-08-31 1999-08-31 不揮発性半導体記憶装置 Pending JP2001067884A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP24632799A JP2001067884A (ja) 1999-08-31 1999-08-31 不揮発性半導体記憶装置
US09/645,878 US6243290B1 (en) 1999-08-31 2000-08-25 Nonvolatile semiconductor memory device
TW089117561A TW490671B (en) 1999-08-31 2000-08-30 Nonvolatile semiconductor memory device
KR1020000050653A KR100731237B1 (ko) 1999-08-31 2000-08-30 불휘발성 반도체 기억 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24632799A JP2001067884A (ja) 1999-08-31 1999-08-31 不揮発性半導体記憶装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007017934A Division JP2007141447A (ja) 2007-01-29 2007-01-29 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2001067884A JP2001067884A (ja) 2001-03-16
JP2001067884A5 true JP2001067884A5 (enExample) 2006-09-21

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP24632799A Pending JP2001067884A (ja) 1999-08-31 1999-08-31 不揮発性半導体記憶装置

Country Status (4)

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US (1) US6243290B1 (enExample)
JP (1) JP2001067884A (enExample)
KR (1) KR100731237B1 (enExample)
TW (1) TW490671B (enExample)

Families Citing this family (91)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4057756B2 (ja) * 2000-03-01 2008-03-05 松下電器産業株式会社 半導体集積回路
EP1199725B1 (en) * 2000-10-13 2010-10-06 STMicroelectronics Srl Method for storing and reading data in a multibit nonvolatile memory with a non-binary number of bits per cell
US6542403B1 (en) * 2001-02-08 2003-04-01 Advanced Micro Devices, Inc. Piggyback programming using voltage control for multi-level cell flash memory designs
JP4907011B2 (ja) * 2001-04-27 2012-03-28 株式会社半導体エネルギー研究所 不揮発性メモリとその駆動方法、及び半導体装置
US6522580B2 (en) * 2001-06-27 2003-02-18 Sandisk Corporation Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
DE60127125D1 (de) * 2001-09-28 2007-04-19 St Microelectronics Srl Verfahren zum Speichern und Lesen von Daten in einem nichtflüchtigen Mehrpegelspeicher mit einer nichtbinären Anzahl von Pegeln und dazugehörige Schaltungsarchitektur
US6621739B2 (en) * 2002-01-18 2003-09-16 Sandisk Corporation Reducing the effects of noise in non-volatile memories through multiple reads
US6781877B2 (en) * 2002-09-06 2004-08-24 Sandisk Corporation Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells
JP3889699B2 (ja) * 2002-11-29 2007-03-07 株式会社東芝 不揮発性半導体記憶装置及びそのデータ書き込み方法
US7073103B2 (en) 2002-12-05 2006-07-04 Sandisk Corporation Smart verify for multi-state memories
ITMI20022570A1 (it) 2002-12-05 2004-06-06 Simicroelectronics S R L Metodo di programmazione di una memoria a semiconduttore non-volatile programmabile elettricamente
ITMI20022569A1 (it) * 2002-12-05 2004-06-06 Simicroelectronics S R L Metodo di programmazione di una memoria a semiconduttore non-volatile programmabile elettronicamente
US6882567B1 (en) 2002-12-06 2005-04-19 Multi Level Memory Technology Parallel programming of multiple-bit-per-cell memory cells on a continuous word line
WO2004068500A1 (ja) * 2003-01-31 2004-08-12 Hitachi, Ltd. 不揮発性半導体記憶装置
JP5039099B2 (ja) * 2003-04-04 2012-10-03 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
KR100512181B1 (ko) * 2003-07-11 2005-09-05 삼성전자주식회사 멀티 레벨 셀을 갖는 플래시 메모리 장치와 그것의 독출방법 및 프로그램 방법
US6996011B2 (en) * 2004-05-26 2006-02-07 Macronix International Co., Ltd. NAND-type non-volatile memory cell and method for operating same
US7139198B2 (en) * 2004-01-27 2006-11-21 Sandisk Corporation Efficient verification for coarse/fine programming of non-volatile memory
US7068539B2 (en) * 2004-01-27 2006-06-27 Sandisk Corporation Charge packet metering for coarse/fine programming of non-volatile memory
US7002843B2 (en) * 2004-01-27 2006-02-21 Sandisk Corporation Variable current sinking for coarse/fine programming of non-volatile memory
JP2008176924A (ja) * 2004-01-30 2008-07-31 Toshiba Corp 半導体記憶装置
JP4170952B2 (ja) 2004-01-30 2008-10-22 株式会社東芝 半導体記憶装置
US7023733B2 (en) * 2004-05-05 2006-04-04 Sandisk Corporation Boosting to control programming of non-volatile memory
ATE511187T1 (de) * 2004-05-05 2011-06-15 Sandisk Corp Boosting zur steuerung der programmierung von nichtflüchtigem speicher
US7020026B2 (en) * 2004-05-05 2006-03-28 Sandisk Corporation Bitline governed approach for program control of non-volatile memory
EP1785998A1 (en) * 2004-08-30 2007-05-16 Spansion LLC Semiconductor device, semiconductor device testing method, and data writing method
US7173859B2 (en) * 2004-11-16 2007-02-06 Sandisk Corporation Faster programming of higher level states in multi-level cell flash memory
JP4606869B2 (ja) * 2004-12-24 2011-01-05 ルネサスエレクトロニクス株式会社 半導体装置
GB2468051B (en) * 2005-01-27 2011-02-09 Spansion Llc Semiconductor device,address assignment method and verify method
US7251160B2 (en) 2005-03-16 2007-07-31 Sandisk Corporation Non-volatile memory and method with power-saving read and program-verify operations
JP4801935B2 (ja) * 2005-06-08 2011-10-26 株式会社東芝 半導体記憶装置
US7362616B2 (en) * 2005-07-28 2008-04-22 Stmicroelectronics S.R.L. NAND flash memory with erase verify based on shorter evaluation time
EP1748446A1 (en) * 2005-07-28 2007-01-31 STMicroelectronics S.r.l. Two pages programming
KR100705220B1 (ko) * 2005-09-15 2007-04-06 주식회사 하이닉스반도체 프로그램 속도를 증가시키기 위한 플래시 메모리 장치의소거 및 프로그램 방법
JP2007102865A (ja) * 2005-09-30 2007-04-19 Toshiba Corp 半導体集積回路装置
US7286406B2 (en) * 2005-10-14 2007-10-23 Sandisk Corporation Method for controlled programming of non-volatile memory exhibiting bit line coupling
US7206235B1 (en) 2005-10-14 2007-04-17 Sandisk Corporation Apparatus for controlled programming of non-volatile memory exhibiting bit line coupling
US7301817B2 (en) * 2005-10-27 2007-11-27 Sandisk Corporation Method for programming of multi-state non-volatile memory using smart verify
US7366022B2 (en) * 2005-10-27 2008-04-29 Sandisk Corporation Apparatus for programming of multi-state non-volatile memory using smart verify
US7616481B2 (en) * 2005-12-28 2009-11-10 Sandisk Corporation Memories with alternate sensing techniques
US7639542B2 (en) * 2006-05-15 2009-12-29 Apple Inc. Maintenance operations for multi-level data storage cells
US7852690B2 (en) * 2006-05-15 2010-12-14 Apple Inc. Multi-chip package for a flash memory
US7639531B2 (en) * 2006-05-15 2009-12-29 Apple Inc. Dynamic cell bit resolution
US7551486B2 (en) * 2006-05-15 2009-06-23 Apple Inc. Iterative memory cell charging based on reference cell value
US7613043B2 (en) * 2006-05-15 2009-11-03 Apple Inc. Shifting reference values to account for voltage sag
US7511646B2 (en) * 2006-05-15 2009-03-31 Apple Inc. Use of 8-bit or higher A/D for NAND cell value
US8000134B2 (en) 2006-05-15 2011-08-16 Apple Inc. Off-die charge pump that supplies multiple flash devices
US7911834B2 (en) * 2006-05-15 2011-03-22 Apple Inc. Analog interface for a flash memory die
US7568135B2 (en) * 2006-05-15 2009-07-28 Apple Inc. Use of alternative value in cell detection
US7701797B2 (en) * 2006-05-15 2010-04-20 Apple Inc. Two levels of voltage regulation supplied for logic and data programming voltage of a memory device
TW200807421A (en) * 2006-06-26 2008-02-01 Sandisk Corp Method and system for programming non-volatile memory using variable amplitude programming pulses
US20070297247A1 (en) * 2006-06-26 2007-12-27 Gerrit Jan Hemink Method for programming non-volatile memory using variable amplitude programming pulses
US7602650B2 (en) 2006-08-30 2009-10-13 Samsung Electronics Co., Ltd. Flash memory device and method for programming multi-level cells in the same
US7525838B2 (en) 2006-08-30 2009-04-28 Samsung Electronics Co., Ltd. Flash memory device and method for programming multi-level cells in the same
US7961511B2 (en) * 2006-09-26 2011-06-14 Sandisk Corporation Hybrid programming methods and systems for non-volatile memory storage elements
US7701770B2 (en) * 2006-09-29 2010-04-20 Hynix Semiconductor Inc. Flash memory device and program method thereof
US7474561B2 (en) * 2006-10-10 2009-01-06 Sandisk Corporation Variable program voltage increment values in non-volatile memory program operations
US7450426B2 (en) * 2006-10-10 2008-11-11 Sandisk Corporation Systems utilizing variable program voltage increment values in non-volatile memory program operations
KR100801035B1 (ko) * 2006-12-14 2008-02-04 삼성전자주식회사 멀티 레벨 셀의 프로그램 방법, 페이지 버퍼 블록 및 이를포함하는 불휘발성 메모리 장치
US7590007B2 (en) * 2007-01-11 2009-09-15 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
US7619930B2 (en) * 2007-02-20 2009-11-17 Sandisk Corporation Dynamic verify based on threshold voltage distribution
US7630246B2 (en) * 2007-06-18 2009-12-08 Micron Technology, Inc. Programming rate identification and control in a solid state memory
US7599224B2 (en) * 2007-07-03 2009-10-06 Sandisk Corporation Systems for coarse/fine program verification in non-volatile memory using different reference levels for improved sensing
US7508715B2 (en) * 2007-07-03 2009-03-24 Sandisk Corporation Coarse/fine program verification in non-volatile memory using different reference levels for improved sensing
KR101448851B1 (ko) 2008-02-26 2014-10-13 삼성전자주식회사 비휘발성 메모리 장치에서의 프로그래밍 방법
US8059447B2 (en) * 2008-06-27 2011-11-15 Sandisk 3D Llc Capacitive discharge method for writing to non-volatile memory
US8130528B2 (en) 2008-08-25 2012-03-06 Sandisk 3D Llc Memory system with sectional data lines
US8027209B2 (en) * 2008-10-06 2011-09-27 Sandisk 3D, Llc Continuous programming of non-volatile memory
JP2010135023A (ja) * 2008-12-05 2010-06-17 Toshiba Corp 半導体記憶装置
KR101517597B1 (ko) 2009-03-25 2015-05-07 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 프로그램 전압 생성방법
US8279650B2 (en) 2009-04-20 2012-10-02 Sandisk 3D Llc Memory system with data line switching scheme
KR101024134B1 (ko) * 2009-06-12 2011-03-22 주식회사 하이닉스반도체 불휘발성 메모리 소자 및 이의 프로그램 방법
US8116140B2 (en) * 2010-04-09 2012-02-14 Sandisk Technologies Inc. Saw-shaped multi-pulse programming for program noise reduction in memory
US8374031B2 (en) 2010-09-29 2013-02-12 SanDisk Technologies, Inc. Techniques for the fast settling of word lines in NAND flash memory
JP5668489B2 (ja) * 2011-01-20 2015-02-12 富士通セミコンダクター株式会社 半導体メモリおよび半導体メモリの製造方法
US8811075B2 (en) 2012-01-06 2014-08-19 Sandisk Technologies Inc. Charge cycling by equalizing and regulating the source, well, and bit line levels during write operations for NAND flash memory: verify to program transition
US8868516B2 (en) * 2012-02-17 2014-10-21 International Business Machines Corporation Managing enterprise data quality using collective intelligence
KR102030330B1 (ko) * 2012-12-11 2019-10-10 삼성전자 주식회사 저항체를 이용한 비휘발성 메모리 장치 및 그 구동 방법
KR101949987B1 (ko) * 2012-12-18 2019-02-20 에스케이하이닉스 주식회사 데이터 저장 장치 및 그것의 동작 방법
JP5814961B2 (ja) 2013-02-26 2015-11-17 株式会社東芝 不揮発性半導体記憶装置
US8942043B2 (en) 2013-03-04 2015-01-27 Sandisk Technologies Inc. Non-volatile storage with process that reduces read disturb on end wordlines
KR20150091684A (ko) * 2014-02-03 2015-08-12 에스케이하이닉스 주식회사 반도체 장치
JP6262063B2 (ja) * 2014-03-18 2018-01-17 東芝メモリ株式会社 不揮発性メモリおよび書き込み方法
KR102219292B1 (ko) * 2014-07-21 2021-02-23 삼성전자 주식회사 반도체 메모리 장치, 이를 포함하는 반도체 메모리 시스템
US9443606B2 (en) 2014-10-28 2016-09-13 Sandisk Technologies Llc Word line dependent two strobe sensing mode for nonvolatile storage elements
US9972395B2 (en) * 2015-10-05 2018-05-15 Silicon Storage Technology, Inc. Row and column decoders comprising fully depleted silicon-on-insulator transistors for use in flash memory systems
US10248499B2 (en) 2016-06-24 2019-04-02 Sandisk Technologies Llc Non-volatile storage system using two pass programming with bit error control
US9786345B1 (en) * 2016-09-16 2017-10-10 Micron Technology, Inc. Compensation for threshold voltage variation of memory cell components
US10354738B2 (en) * 2017-09-27 2019-07-16 Micron Technology, Inc. One check fail byte (CFBYTE) scheme
US10535412B2 (en) * 2018-02-09 2020-01-14 Sandisk Technologies Llc Single pulse verification of memory cells
US11755899B2 (en) * 2019-11-11 2023-09-12 Silicon Storage Technology, Inc. Precise programming method and apparatus for analog neural memory in an artificial neural network

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03219496A (ja) 1990-01-25 1991-09-26 Hitachi Ltd 不揮発性半導体記憶装置
JPH0457294A (ja) 1990-06-22 1992-02-25 Ricoh Co Ltd プログラム可能な不揮発性半導体メモリ装置
JP3231437B2 (ja) 1992-07-06 2001-11-19 株式会社日立製作所 不揮発性半導体記憶装置
JP3311092B2 (ja) 1993-07-23 2002-08-05 株式会社東芝 多値メモリ
US5748535A (en) * 1994-10-26 1998-05-05 Macronix International Co., Ltd. Advanced program verify for page mode flash memory
DE4442711A1 (de) * 1994-12-01 1996-06-05 Claas Ohg Kapazitive Meßvorrichtung
JP3328463B2 (ja) 1995-04-06 2002-09-24 株式会社日立製作所 並列型不揮発性半導体記憶装置及び同装置の使用方法
US5572462A (en) * 1995-08-02 1996-11-05 Aplus Integrated Circuits, Inc. Multistate prom and decompressor
KR0172401B1 (ko) 1995-12-07 1999-03-30 김광호 다수상태 불휘발성 반도체 메모리 장치
US6078518A (en) * 1998-02-25 2000-06-20 Micron Technology, Inc. Apparatus and method for reading state of multistate non-volatile memory cells
JP3612916B2 (ja) 1997-01-29 2005-01-26 富士電機リテイルシステムズ株式会社 自動販売機の商品収納装置

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