KR100731237B1 - 불휘발성 반도체 기억 장치 - Google Patents

불휘발성 반도체 기억 장치 Download PDF

Info

Publication number
KR100731237B1
KR100731237B1 KR1020000050653A KR20000050653A KR100731237B1 KR 100731237 B1 KR100731237 B1 KR 100731237B1 KR 1020000050653 A KR1020000050653 A KR 1020000050653A KR 20000050653 A KR20000050653 A KR 20000050653A KR 100731237 B1 KR100731237 B1 KR 100731237B1
Authority
KR
South Korea
Prior art keywords
memory cell
write
voltage
state
writing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020000050653A
Other languages
English (en)
Korean (ko)
Other versions
KR20010082518A (ko
Inventor
구라따히데아끼
고바야시나오끼
고바야시다까시
기무라가쯔따까
구메히또시
사에끼슈니찌
Original Assignee
가부시키가이샤 히타치세이사쿠쇼
히다치디바이스 엔지니어링가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 히타치세이사쿠쇼, 히다치디바이스 엔지니어링가부시키가이샤 filed Critical 가부시키가이샤 히타치세이사쿠쇼
Publication of KR20010082518A publication Critical patent/KR20010082518A/ko
Application granted granted Critical
Publication of KR100731237B1 publication Critical patent/KR100731237B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G11C16/3481—Circuits or methods to verify correct programming of nonvolatile memory cells whilst programming is in progress, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate programming
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/562—Multilevel memory programming aspects
    • G11C2211/5621—Multilevel programming verification
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/562—Multilevel memory programming aspects
    • G11C2211/5623—Concurrent multilevel programming and reading
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/562—Multilevel memory programming aspects
    • G11C2211/5624—Concurrent multilevel programming and programming verification
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5642—Multilevel memory with buffers, latches, registers at input or output

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
KR1020000050653A 1999-08-31 2000-08-30 불휘발성 반도체 기억 장치 Expired - Fee Related KR100731237B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1999-246327 1999-08-31
JP24632799A JP2001067884A (ja) 1999-08-31 1999-08-31 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
KR20010082518A KR20010082518A (ko) 2001-08-30
KR100731237B1 true KR100731237B1 (ko) 2007-06-22

Family

ID=17146923

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000050653A Expired - Fee Related KR100731237B1 (ko) 1999-08-31 2000-08-30 불휘발성 반도체 기억 장치

Country Status (4)

Country Link
US (1) US6243290B1 (enExample)
JP (1) JP2001067884A (enExample)
KR (1) KR100731237B1 (enExample)
TW (1) TW490671B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200043518A (ko) * 2017-09-27 2020-04-27 마이크론 테크놀로지, 인크. 일 체크 페일 바이트(cfbyte) 방식

Families Citing this family (90)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4057756B2 (ja) * 2000-03-01 2008-03-05 松下電器産業株式会社 半導体集積回路
DE60045073D1 (de) * 2000-10-13 2010-11-18 St Microelectronics Srl Verfahren zum Speichern und Lesen von Daten eines nichtflüchtigen Multibitspeichers mit einer nichtbinären Anzahl von Bits pro Zelle
US6542403B1 (en) * 2001-02-08 2003-04-01 Advanced Micro Devices, Inc. Piggyback programming using voltage control for multi-level cell flash memory designs
JP4907011B2 (ja) * 2001-04-27 2012-03-28 株式会社半導体エネルギー研究所 不揮発性メモリとその駆動方法、及び半導体装置
US6522580B2 (en) * 2001-06-27 2003-02-18 Sandisk Corporation Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states
EP1298670B1 (en) * 2001-09-28 2007-03-07 STMicroelectronics S.r.l. Method for storing and reading data in a multilevel nonvolatile memory with a non-binary number of levels, and architecture therefor
US6621739B2 (en) * 2002-01-18 2003-09-16 Sandisk Corporation Reducing the effects of noise in non-volatile memories through multiple reads
US6781877B2 (en) * 2002-09-06 2004-08-24 Sandisk Corporation Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells
JP3889699B2 (ja) * 2002-11-29 2007-03-07 株式会社東芝 不揮発性半導体記憶装置及びそのデータ書き込み方法
ITMI20022569A1 (it) * 2002-12-05 2004-06-06 Simicroelectronics S R L Metodo di programmazione di una memoria a semiconduttore non-volatile programmabile elettronicamente
ITMI20022570A1 (it) 2002-12-05 2004-06-06 Simicroelectronics S R L Metodo di programmazione di una memoria a semiconduttore non-volatile programmabile elettricamente
US7073103B2 (en) 2002-12-05 2006-07-04 Sandisk Corporation Smart verify for multi-state memories
US6882567B1 (en) * 2002-12-06 2005-04-19 Multi Level Memory Technology Parallel programming of multiple-bit-per-cell memory cells on a continuous word line
WO2004068500A1 (ja) * 2003-01-31 2004-08-12 Hitachi, Ltd. 不揮発性半導体記憶装置
JP5039099B2 (ja) * 2003-04-04 2012-10-03 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
KR100512181B1 (ko) * 2003-07-11 2005-09-05 삼성전자주식회사 멀티 레벨 셀을 갖는 플래시 메모리 장치와 그것의 독출방법 및 프로그램 방법
US6996011B2 (en) * 2004-05-26 2006-02-07 Macronix International Co., Ltd. NAND-type non-volatile memory cell and method for operating same
US7068539B2 (en) * 2004-01-27 2006-06-27 Sandisk Corporation Charge packet metering for coarse/fine programming of non-volatile memory
US7139198B2 (en) * 2004-01-27 2006-11-21 Sandisk Corporation Efficient verification for coarse/fine programming of non-volatile memory
US7002843B2 (en) * 2004-01-27 2006-02-21 Sandisk Corporation Variable current sinking for coarse/fine programming of non-volatile memory
JP2008176924A (ja) * 2004-01-30 2008-07-31 Toshiba Corp 半導体記憶装置
JP4170952B2 (ja) 2004-01-30 2008-10-22 株式会社東芝 半導体記憶装置
WO2005112037A1 (en) * 2004-05-05 2005-11-24 Sandisk Corporation Boosting to control programming of non-volatile memory
US7023733B2 (en) * 2004-05-05 2006-04-04 Sandisk Corporation Boosting to control programming of non-volatile memory
US7020026B2 (en) * 2004-05-05 2006-03-28 Sandisk Corporation Bitline governed approach for program control of non-volatile memory
EP1785998A1 (en) * 2004-08-30 2007-05-16 Spansion LLC Semiconductor device, semiconductor device testing method, and data writing method
US7173859B2 (en) * 2004-11-16 2007-02-06 Sandisk Corporation Faster programming of higher level states in multi-level cell flash memory
JP4606869B2 (ja) * 2004-12-24 2011-01-05 ルネサスエレクトロニクス株式会社 半導体装置
GB2468051B (en) * 2005-01-27 2011-02-09 Spansion Llc Semiconductor device,address assignment method and verify method
US7251160B2 (en) * 2005-03-16 2007-07-31 Sandisk Corporation Non-volatile memory and method with power-saving read and program-verify operations
JP4801935B2 (ja) * 2005-06-08 2011-10-26 株式会社東芝 半導体記憶装置
US7366014B2 (en) 2005-07-28 2008-04-29 Stmicroelectronics S.R.L. Double page programming system and method
EP1748446A1 (en) * 2005-07-28 2007-01-31 STMicroelectronics S.r.l. Two pages programming
KR100705220B1 (ko) * 2005-09-15 2007-04-06 주식회사 하이닉스반도체 프로그램 속도를 증가시키기 위한 플래시 메모리 장치의소거 및 프로그램 방법
JP2007102865A (ja) * 2005-09-30 2007-04-19 Toshiba Corp 半導体集積回路装置
US7206235B1 (en) 2005-10-14 2007-04-17 Sandisk Corporation Apparatus for controlled programming of non-volatile memory exhibiting bit line coupling
US7286406B2 (en) * 2005-10-14 2007-10-23 Sandisk Corporation Method for controlled programming of non-volatile memory exhibiting bit line coupling
US7366022B2 (en) * 2005-10-27 2008-04-29 Sandisk Corporation Apparatus for programming of multi-state non-volatile memory using smart verify
US7301817B2 (en) 2005-10-27 2007-11-27 Sandisk Corporation Method for programming of multi-state non-volatile memory using smart verify
US7616481B2 (en) * 2005-12-28 2009-11-10 Sandisk Corporation Memories with alternate sensing techniques
US7639531B2 (en) * 2006-05-15 2009-12-29 Apple Inc. Dynamic cell bit resolution
US7511646B2 (en) * 2006-05-15 2009-03-31 Apple Inc. Use of 8-bit or higher A/D for NAND cell value
US7613043B2 (en) * 2006-05-15 2009-11-03 Apple Inc. Shifting reference values to account for voltage sag
US7852690B2 (en) * 2006-05-15 2010-12-14 Apple Inc. Multi-chip package for a flash memory
US7551486B2 (en) * 2006-05-15 2009-06-23 Apple Inc. Iterative memory cell charging based on reference cell value
US7639542B2 (en) * 2006-05-15 2009-12-29 Apple Inc. Maintenance operations for multi-level data storage cells
US7911834B2 (en) * 2006-05-15 2011-03-22 Apple Inc. Analog interface for a flash memory die
US8000134B2 (en) 2006-05-15 2011-08-16 Apple Inc. Off-die charge pump that supplies multiple flash devices
US7568135B2 (en) * 2006-05-15 2009-07-28 Apple Inc. Use of alternative value in cell detection
US7701797B2 (en) * 2006-05-15 2010-04-20 Apple Inc. Two levels of voltage regulation supplied for logic and data programming voltage of a memory device
US20070297247A1 (en) * 2006-06-26 2007-12-27 Gerrit Jan Hemink Method for programming non-volatile memory using variable amplitude programming pulses
TW200807421A (en) * 2006-06-26 2008-02-01 Sandisk Corp Method and system for programming non-volatile memory using variable amplitude programming pulses
US7525838B2 (en) 2006-08-30 2009-04-28 Samsung Electronics Co., Ltd. Flash memory device and method for programming multi-level cells in the same
US7602650B2 (en) 2006-08-30 2009-10-13 Samsung Electronics Co., Ltd. Flash memory device and method for programming multi-level cells in the same
US7961511B2 (en) * 2006-09-26 2011-06-14 Sandisk Corporation Hybrid programming methods and systems for non-volatile memory storage elements
US7701770B2 (en) * 2006-09-29 2010-04-20 Hynix Semiconductor Inc. Flash memory device and program method thereof
US7474561B2 (en) * 2006-10-10 2009-01-06 Sandisk Corporation Variable program voltage increment values in non-volatile memory program operations
US7450426B2 (en) * 2006-10-10 2008-11-11 Sandisk Corporation Systems utilizing variable program voltage increment values in non-volatile memory program operations
KR100801035B1 (ko) * 2006-12-14 2008-02-04 삼성전자주식회사 멀티 레벨 셀의 프로그램 방법, 페이지 버퍼 블록 및 이를포함하는 불휘발성 메모리 장치
US7590007B2 (en) * 2007-01-11 2009-09-15 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
US7619930B2 (en) * 2007-02-20 2009-11-17 Sandisk Corporation Dynamic verify based on threshold voltage distribution
US7630246B2 (en) * 2007-06-18 2009-12-08 Micron Technology, Inc. Programming rate identification and control in a solid state memory
US7599224B2 (en) * 2007-07-03 2009-10-06 Sandisk Corporation Systems for coarse/fine program verification in non-volatile memory using different reference levels for improved sensing
US7508715B2 (en) * 2007-07-03 2009-03-24 Sandisk Corporation Coarse/fine program verification in non-volatile memory using different reference levels for improved sensing
KR101448851B1 (ko) * 2008-02-26 2014-10-13 삼성전자주식회사 비휘발성 메모리 장치에서의 프로그래밍 방법
US8059447B2 (en) 2008-06-27 2011-11-15 Sandisk 3D Llc Capacitive discharge method for writing to non-volatile memory
US8130528B2 (en) 2008-08-25 2012-03-06 Sandisk 3D Llc Memory system with sectional data lines
US8027209B2 (en) * 2008-10-06 2011-09-27 Sandisk 3D, Llc Continuous programming of non-volatile memory
JP2010135023A (ja) * 2008-12-05 2010-06-17 Toshiba Corp 半導体記憶装置
KR101517597B1 (ko) 2009-03-25 2015-05-07 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 프로그램 전압 생성방법
US8279650B2 (en) 2009-04-20 2012-10-02 Sandisk 3D Llc Memory system with data line switching scheme
KR101024134B1 (ko) * 2009-06-12 2011-03-22 주식회사 하이닉스반도체 불휘발성 메모리 소자 및 이의 프로그램 방법
US8116140B2 (en) * 2010-04-09 2012-02-14 Sandisk Technologies Inc. Saw-shaped multi-pulse programming for program noise reduction in memory
US8374031B2 (en) 2010-09-29 2013-02-12 SanDisk Technologies, Inc. Techniques for the fast settling of word lines in NAND flash memory
JP5668489B2 (ja) * 2011-01-20 2015-02-12 富士通セミコンダクター株式会社 半導体メモリおよび半導体メモリの製造方法
US8811075B2 (en) 2012-01-06 2014-08-19 Sandisk Technologies Inc. Charge cycling by equalizing and regulating the source, well, and bit line levels during write operations for NAND flash memory: verify to program transition
US8868516B2 (en) * 2012-02-17 2014-10-21 International Business Machines Corporation Managing enterprise data quality using collective intelligence
KR102030330B1 (ko) * 2012-12-11 2019-10-10 삼성전자 주식회사 저항체를 이용한 비휘발성 메모리 장치 및 그 구동 방법
KR101949987B1 (ko) * 2012-12-18 2019-02-20 에스케이하이닉스 주식회사 데이터 저장 장치 및 그것의 동작 방법
JP5814961B2 (ja) 2013-02-26 2015-11-17 株式会社東芝 不揮発性半導体記憶装置
US8942043B2 (en) 2013-03-04 2015-01-27 Sandisk Technologies Inc. Non-volatile storage with process that reduces read disturb on end wordlines
KR20150091684A (ko) * 2014-02-03 2015-08-12 에스케이하이닉스 주식회사 반도체 장치
JP6262063B2 (ja) * 2014-03-18 2018-01-17 東芝メモリ株式会社 不揮発性メモリおよび書き込み方法
KR102219292B1 (ko) * 2014-07-21 2021-02-23 삼성전자 주식회사 반도체 메모리 장치, 이를 포함하는 반도체 메모리 시스템
US9443606B2 (en) 2014-10-28 2016-09-13 Sandisk Technologies Llc Word line dependent two strobe sensing mode for nonvolatile storage elements
US9972395B2 (en) * 2015-10-05 2018-05-15 Silicon Storage Technology, Inc. Row and column decoders comprising fully depleted silicon-on-insulator transistors for use in flash memory systems
US10248499B2 (en) 2016-06-24 2019-04-02 Sandisk Technologies Llc Non-volatile storage system using two pass programming with bit error control
US9786345B1 (en) * 2016-09-16 2017-10-10 Micron Technology, Inc. Compensation for threshold voltage variation of memory cell components
US10535412B2 (en) * 2018-02-09 2020-01-14 Sandisk Technologies Llc Single pulse verification of memory cells
US11755899B2 (en) * 2019-11-11 2023-09-12 Silicon Storage Technology, Inc. Precise programming method and apparatus for analog neural memory in an artificial neural network

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5708369A (en) * 1994-12-01 1998-01-13 Claas Kommanditgesellschaft Auf Aktien Capacitive measuring device
US5748535A (en) * 1994-10-26 1998-05-05 Macronix International Co., Ltd. Advanced program verify for page mode flash memory

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03219496A (ja) 1990-01-25 1991-09-26 Hitachi Ltd 不揮発性半導体記憶装置
JPH0457294A (ja) 1990-06-22 1992-02-25 Ricoh Co Ltd プログラム可能な不揮発性半導体メモリ装置
JP3231437B2 (ja) 1992-07-06 2001-11-19 株式会社日立製作所 不揮発性半導体記憶装置
JP3311092B2 (ja) 1993-07-23 2002-08-05 株式会社東芝 多値メモリ
JP3328463B2 (ja) 1995-04-06 2002-09-24 株式会社日立製作所 並列型不揮発性半導体記憶装置及び同装置の使用方法
US5572462A (en) * 1995-08-02 1996-11-05 Aplus Integrated Circuits, Inc. Multistate prom and decompressor
KR0172401B1 (ko) * 1995-12-07 1999-03-30 김광호 다수상태 불휘발성 반도체 메모리 장치
US6078518A (en) * 1998-02-25 2000-06-20 Micron Technology, Inc. Apparatus and method for reading state of multistate non-volatile memory cells
JP3612916B2 (ja) 1997-01-29 2005-01-26 富士電機リテイルシステムズ株式会社 自動販売機の商品収納装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5748535A (en) * 1994-10-26 1998-05-05 Macronix International Co., Ltd. Advanced program verify for page mode flash memory
US5708369A (en) * 1994-12-01 1998-01-13 Claas Kommanditgesellschaft Auf Aktien Capacitive measuring device

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
IEEE ISSCC''95에 게재된 "A 3.3 V 32 Mb NAND flash memory with incremental step pulse programming scheme" (1995.2.16 ) *
IEEE ISSCC''96에 게재된 "A 3.3 V 128 Mb multi-level NAND flash memory for mass storage applications" (1996.2.8 ) *
US05748535NU L

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200043518A (ko) * 2017-09-27 2020-04-27 마이크론 테크놀로지, 인크. 일 체크 페일 바이트(cfbyte) 방식
KR102333035B1 (ko) * 2017-09-27 2021-12-02 마이크론 테크놀로지, 인크. 일 체크 실패 바이트(cfbyte) 방식

Also Published As

Publication number Publication date
KR20010082518A (ko) 2001-08-30
JP2001067884A (ja) 2001-03-16
TW490671B (en) 2002-06-11
US6243290B1 (en) 2001-06-05

Similar Documents

Publication Publication Date Title
KR100731237B1 (ko) 불휘발성 반도체 기억 장치
US7362616B2 (en) NAND flash memory with erase verify based on shorter evaluation time
JP4156248B2 (ja) 不揮発性半導体記憶装置
KR960010958B1 (ko) 소거시간을 단축할 수 있는 불휘발성 반도체 메모리
CN101107671B (zh) 存储器感测电路及用于低电压操作的方法
JP4084922B2 (ja) 不揮発性記憶装置の書込み方法
KR100458408B1 (ko) 비휘발성 반도체 기억 장치
US5568419A (en) Non-volatile semiconductor memory device and data erasing method therefor
CN100424785C (zh) 存储器编程用的行译码器电路
KR100634272B1 (ko) 불휘발성 반도체 기억 장치 및 그 데이터 기입 방법
CN106158028B (zh) 快闪存储器及其编程方法
US6091642A (en) Method for controlled erasing memory devices, in particular analog and multi-level flash-EEPROM devices
US20070242518A1 (en) Method for programming a block of memory cells, non-volatile memory device and memory card device
KR102672106B1 (ko) 전류 감지 페이지 버퍼를 포함하는 메모리 장치
US6661709B2 (en) Nonvolatile semiconductor memory device
US6714459B2 (en) Nonvolatile semiconductor memory device and method of detecting overerased cell
CN100435242C (zh) 在存储器装置中恢复超擦比特的方法
US7336532B2 (en) Method for reading NAND memory device and memory cell array thereof
KR19980071738A (ko) 반도체 메모리
JP2007141447A (ja) 不揮発性半導体記憶装置
KR20030019854A (ko) 메모리 셀 트랜지스터의 임계값 편차의 영향을 억제할 수있는 비휘발성 반도체 기억 장치
JP4593668B2 (ja) 不揮発性メモリにおける補償感知のための基準センス増幅器および方法
JP7309923B2 (ja) フラッシュメモリデバイスにおけるセンス回路および検知動作方法
US5953251A (en) Programming method for nonvolatile memories
EP1752989B1 (en) NAND flash memory with erase verify based on shorter delay before sensing

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

J201 Request for trial against refusal decision
PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

B701 Decision to grant
PB0701 Decision of registration after re-examination before a trial

St.27 status event code: A-3-4-F10-F13-rex-PB0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

G170 Re-publication after modification of scope of protection [patent]
PG1701 Publication of correction

St.27 status event code: A-5-5-P10-P19-oth-PG1701

Patent document republication publication date: 20080423

Republication note text: Request for Correction Notice (Document Request)

Gazette number: 1007312370000

Gazette reference publication date: 20070622

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20130524

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20140530

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20150515

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20160616

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20160616