JP2000503970A - クラックがない炭化ケイ素拡散部品の製造方法 - Google Patents
クラックがない炭化ケイ素拡散部品の製造方法Info
- Publication number
- JP2000503970A JP2000503970A JP10516959A JP51695998A JP2000503970A JP 2000503970 A JP2000503970 A JP 2000503970A JP 10516959 A JP10516959 A JP 10516959A JP 51695998 A JP51695998 A JP 51695998A JP 2000503970 A JP2000503970 A JP 2000503970A
- Authority
- JP
- Japan
- Prior art keywords
- weight
- fraction
- silicon carbide
- coarse
- batch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 141
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 136
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 238000009792 diffusion process Methods 0.000 title description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 177
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 99
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 96
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 88
- 239000002245 particle Substances 0.000 claims abstract description 85
- 239000002994 raw material Substances 0.000 claims abstract description 52
- 239000011362 coarse particle Substances 0.000 claims abstract description 50
- 239000010419 fine particle Substances 0.000 claims abstract description 46
- 238000000034 method Methods 0.000 claims abstract description 40
- 230000008569 process Effects 0.000 claims abstract description 9
- 239000000843 powder Substances 0.000 claims description 30
- 238000005336 cracking Methods 0.000 description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 13
- 230000000694 effects Effects 0.000 description 13
- 229910052760 oxygen Inorganic materials 0.000 description 13
- 239000001301 oxygen Substances 0.000 description 13
- 239000000654 additive Substances 0.000 description 8
- 238000004458 analytical method Methods 0.000 description 8
- 238000001354 calcination Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 238000010561 standard procedure Methods 0.000 description 8
- 238000009826 distribution Methods 0.000 description 7
- 230000000977 initiatory effect Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000007569 slipcasting Methods 0.000 description 7
- 238000005266 casting Methods 0.000 description 6
- 238000012512 characterization method Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000011148 porous material Substances 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 230000000996 additive effect Effects 0.000 description 5
- 238000013459 approach Methods 0.000 description 5
- 238000001953 recrystallisation Methods 0.000 description 5
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000012300 argon atmosphere Substances 0.000 description 3
- 239000006229 carbon black Substances 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 239000010802 sludge Substances 0.000 description 3
- 238000002791 soaking Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000013001 point bending Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000007725 thermal activation Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002902 bimodal effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- OSGAYBCDTDRGGQ-UHFFFAOYSA-L calcium sulfate Inorganic materials [Ca+2].[O-]S([O-])(=O)=O OSGAYBCDTDRGGQ-UHFFFAOYSA-L 0.000 description 1
- ZOMBKNNSYQHRCA-UHFFFAOYSA-J calcium sulfate hemihydrate Chemical compound O.[Ca+2].[Ca+2].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O ZOMBKNNSYQHRCA-UHFFFAOYSA-J 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000000567 combustion gas Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 238000004868 gas analysis Methods 0.000 description 1
- 239000010440 gypsum Substances 0.000 description 1
- 229910052602 gypsum Inorganic materials 0.000 description 1
- 239000011507 gypsum plaster Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 238000001935 peptisation Methods 0.000 description 1
- 239000011505 plaster Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000009491 slugging Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
- C04B35/573—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide obtained by reaction sintering or recrystallisation
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/62625—Wet mixtures
- C04B35/6263—Wet mixtures characterised by their solids loadings, i.e. the percentage of solids
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
- C04B35/632—Organic additives
- C04B35/634—Polymers
- C04B35/63404—Polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds
- C04B35/63424—Polyacrylates; Polymethacrylates
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3418—Silicon oxide, silicic acids or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3817—Carbides
- C04B2235/3826—Silicon carbides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
- C04B2235/422—Carbon
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
- C04B2235/422—Carbon
- C04B2235/425—Graphite
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5409—Particle size related information expressed by specific surface values
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5427—Particle size related information expressed by the size of the particles or aggregates thereof millimeter or submillimeter sized, i.e. larger than 0,1 mm
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5436—Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5463—Particle size distributions
- C04B2235/5472—Bimodal, multi-modal or multi-fraction
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/60—Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
- C04B2235/602—Making the green bodies or pre-forms by moulding
- C04B2235/6027—Slip casting
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/60—Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
- C04B2235/608—Green bodies or pre-forms with well-defined density
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/60—Aspects relating to the preparation, properties or mechanical treatment of green bodies or pre-forms
- C04B2235/61—Mechanical properties, e.g. fracture toughness, hardness, Young's modulus or strength
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
- C04B2235/6562—Heating rate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
- C04B2235/6581—Total pressure below 1 atmosphere, e.g. vacuum
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/77—Density
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Products (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.クラックがない焼結炭化ケイ素体の製造方法であって、以下のa)〜c) の工程を含む方法。 a)i)10ミクロン未満の粒度を持つ少なくとも40重量%の微細粒子のフ ラクションであって、炭化ケイ素を含む微細粒子のフラクション、及び ii)少なくとも30ミクロンの粒度を持つ少なくとも40重量%の粗い粒子 のフラクションであって、炭化ケイ素と0.1重量%未満の遊離炭素を含む粗い 粒子のフラクション、 を含む原料粉末バッチを提供する工程であって、 前記原料バッチが合計で少なくとも0.5重量%のシリカ含有量を有し、 前記原料バッチが合計で少なくとも96重量%の炭化ケイ素含有量を有する工程 。 b)前記原料バッチを未焼成体に成形する工程。 c)前記未焼成体を再結晶化させて、2.0g/cc〜2.8g/ccの密度 を持つ再結晶化炭化ケイ素体を提供する工程。 2.前記粗い粒子のフラクションが0.06重量%以下の遊離炭素を含む請求 項1に記載の方法。 3.前記粗い粒子のフラクションが0.02重量%以下の遊離炭素を含む請求 項1に記載の方法。 4.前記粗い粒子のフラクションが0.01重量%以下の遊離炭素を含む請求 項1に記載の方法。 5.前記原料バッチが45重量%〜55重量%の微細フラクションを含む請求 項1に記載の方法。 6.前記微細粒子のフラクションの少なくとも80重量%が0. 4〜8μmの粒度を持つ請求項5に記載の方法。 7.前記微細粒子のフラクションの平均粒度が1〜4μmである請求項6に記 載の方法。 8.前記原料バッチが45重量%〜55重量%の粗いフラクションを含む請求 項1に記載の方法。 9.前記粗い粒子のフラクションの少なくとも80重量%が65〜150μm の粒度を持つ請求項8に記載の方法。 10.前記微細粒子のフラクションの少なくとも96重量%が炭化ケイ素であ る請求項1に記載の方法。 11.前記微細粒子のフラクションの約1.0重量%〜3重量%がシリカであ る請求項10に記載の方法。 12.前記微細粒子のフラクションの1.5重量%〜2.5重量%がシリカで ある請求項11に記載の方法。 13.前記粗い粒子のフラクションの少なくとも96重量%が炭化ケイ素であ る請求項1に記載の方法。 14.前記粗い粒子のフラクションの約0.01重量%〜0.3重量%がシリ カである請求項13に記載の方法。 15.i)10ミクロン未満の粒度を持つ少なくとも40重量%の微細粒子の フラクションであって、炭化ケイ素を含む微細粒子のフラクション、及び ii)少なくとも30ミクロンの粒度を持つ少なくとも40重量%の粗い粒子 のフラクションであって、炭化ケイ素と0.10重量%未満の遊離炭素を含む粗 い粒子のフラクション、 を含む原料バッチであって、 合計で少なくとも0.5重量%のシリカ含有量を有し、 合計で少なくとも96重量%の炭化ケイ素含有量を有する原料バッチ。 16.前記粗い粒子のフラクションが0.06重量%未満の遊離炭素を含む請 求項15に記載の原料バッチ。 17.前記粗いフラクションが0.02重量%以下の遊離炭素を含む請求項1 5に記載の原料バッチ。 18.前記粗いフラクションが0.01重量%以下の遊離炭素を含む請求項1 5に記載の原料バッチ。 19.45重量%〜55重量%の微細フラクションを含む請求項15に記載の 原料バッチ。 20.前記微細フラクションの少なくとも80重量%が0.4〜8μmの粒度 を持つ請求項19に記載の原料バッチ。 21.前記微細フラクションの平均粒度が1〜4μmである請求項20に記載 の原料バッチ。 22.45重量%〜55重量%の粗いフラクションを含む請求項15に記載の 原料バッチ。 23.前記粗いフラクションの少なくとも80重量%が65〜150μmの粒 度を持つ請求項22に記載の原料バッチ。 24.前記微細フラクションの少なくとも96重量%が炭化ケイ素である請求 項15に記載の原料バッチ。 25.前記微細フラクションの約1.0重量%〜3重量%がシリカである請求 項24に記載の原料バッチ。 26.前記微細フラクションの1.5重量%〜2.5重量%がシリカである請 求項25に記載の原料バッチ。 27.前記粗いフラクションの少なくとも96重量%が炭化ケイ素である請求 項15に記載の原料バッチ。 28.前記粗いフラクションの約0.01重量%〜0.3重量%がシリカであ る請求項27に記載の原料バッチ。 29.クラックがない焼結炭化ケイ素体の製造方法であって、以 下のa)〜c)の工程を含む方法。 a)i)10ミクロン未満の粒度を持つ少なくとも40重量%の微細粒子のフ ラクションであって、炭化ケイ素と少なくとも0.10重量%の少なくとも10 m2/gの表面積を持つ遊離炭素とを含む微細粒子のフラクション、及び ii)少なくとも30ミクロンの粒度を持つ少なくとも40重量%の粗い粒子 のフラクションであって、炭化ケイ素と少なくとも0.1重量%の遊離炭素を含 む粗い粒子のフラクション、 を含む原料粉末バッチを提供する工程であって、 前記原料バッチが合計で少なくとも0.5重量%のシリカ含有量を有し、 前記原料バッチが合計で少なくとも96重量%の炭化ケイ素含有量を有する工程 。 b)原料バッチを未焼成体に成形する工程。 c)前記未焼成体を再結晶化させて、2.0g/cc〜2.8g/ccの密度 を持つ再結晶化炭化ケイ素体を提供する工程。 30.前記微細粒子のフラクションが少なくとも0.10重量%のコロイド状 炭素を含む請求項29に記載の方法。 31.i)10ミクロン未満の粒度を持つ少なくとも40重量%の微細粒子の フラクションであって、炭化ケイ素及び少なくとも0.10重量%の少なくとも 10m2/gの表面積を持つ遊離炭素を含む微細粒子のフラクション、及び i i)少なくとも30ミクロンの粒度を持つ少なくとも40重量%の粗い粒子のフ ラクションであって、炭化ケイ素と少なくとも0.1重量%の遊離炭素を含む粗 い粒子のフラクション、 を含む原料バッチであって、 合計で少なくとも0.5重量%のシリカ含有量を有し、 合計で少なくとも96重量%の炭化ケイ素含有量を有する原料バッチ。 32.クラックがない焼結炭化ケイ素体の製造方法であって、以下のa)〜c )の工程を含む方法。 a)i)10ミクロン未満の粒度を持つ少なくとも40重量%の微細粒子のフ ラクションであって、炭化ケイ素と0.10重量%〜0.5重量%未満のシリカ を含む微細粒子のフラクション、並びに ii)少なくとも30ミクロンの粒度を持つ少なくとも40重量%の粗い粒子 のフラクションであって、炭化ケイ素、少なくとも0.1重量%の遊離炭素、及 び少なくとも0.10重量%のシリカを含む粗い粒子のフラクション、 を含む原料粉末バッチを提供する工程であって、 前記原料バッチが合計で少なくとも96重量%の炭化ケイ素含有量を有し、 前記原料バッチが合計で0.5重量%未満のシリカ含有量を有する工程。 b)原料バッチを未焼成体に成形する工程。 c)未焼成体を再結晶化させて、2.0g/cc〜2.8g/ccの密度を持 つ再結晶化炭化ケイ素体を提供する工程。 33.i)10ミクロン未満の粒度を持つ少なくとも40重量%の微細粒子の フラクションであって、炭化ケイ素と0.10重量%〜0.5重量%未満のシリ カを含む微細粒子のフラクション、及び ii)少なくとも30ミクロンの粒度を持つ少なくとも40重量%の粗い粒子 のフラクションであって、炭化ケイ素と0.5重量%未満のシリカを含む粗い粒 子のフラクション、 を含む原料バッチであって、 合計で0.5重量%未満のシリカ含有量を有し、 合計で少なくとも96重量%の炭化ケイ素含有量を有する原料バッチ。 34.粗いフラクションの約0.10〜0.5重量%がシリカである請求項3 3に記載の原料バッチ。 35.微細フラクションの約0.10重量%〜0.4重量%がシリカである請 求項34に記載の原料バッチ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US725,717 | 1996-10-04 | ||
US08/725,717 | 1996-10-04 | ||
US08/725,717 US5702997A (en) | 1996-10-04 | 1996-10-04 | Process for making crack-free silicon carbide diffusion components |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2000503970A true JP2000503970A (ja) | 2000-04-04 |
JP3237760B2 JP3237760B2 (ja) | 2001-12-10 |
Family
ID=24915690
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51695998A Expired - Lifetime JP3237760B2 (ja) | 1996-10-04 | 1997-10-03 | クラックがない炭化ケイ素拡散部品の製造方法 |
Country Status (9)
Country | Link |
---|---|
US (4) | US5702997A (ja) |
EP (1) | EP0931033B1 (ja) |
JP (1) | JP3237760B2 (ja) |
KR (1) | KR100306353B1 (ja) |
CN (1) | CN1068861C (ja) |
AU (1) | AU4608197A (ja) |
CA (1) | CA2267854C (ja) |
DE (1) | DE69714275T2 (ja) |
WO (1) | WO1998014411A1 (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5702997A (en) * | 1996-10-04 | 1997-12-30 | Saint-Gobain/Norton Industrial Ceramics Corp. | Process for making crack-free silicon carbide diffusion components |
AT408153B (de) * | 1998-09-02 | 2001-09-25 | Electrovac | Metall-matrix-composite- (mmc-) bauteil |
US7115535B1 (en) * | 1999-08-02 | 2006-10-03 | The Procter & Gamble Company | Personal care articles comprising batting |
JP4589491B2 (ja) * | 1999-08-24 | 2010-12-01 | 株式会社ブリヂストン | 炭化ケイ素粉末、グリーン体の製造方法、及び炭化ケイ素焼結体の製造方法 |
DE10111225A1 (de) * | 2001-03-08 | 2002-09-19 | Wacker Chemie Gmbh | Verbundwerkstoff auf der Basis von Siliciumcarbid und Kohlenstoff, Verfahren zu seiner Herstellung sowie seine Verwendung |
US6774073B2 (en) | 2002-07-29 | 2004-08-10 | Coorstek, Inc. | Graphite loaded silicon carbide and methods for making |
US6591892B1 (en) * | 2002-11-12 | 2003-07-15 | Saint-Gobain Ceramics & Plastics, Inc. | Method and apparatus for casting coarse grain siliconized silicon carbide parts |
US20040173597A1 (en) * | 2003-03-03 | 2004-09-09 | Manoj Agrawal | Apparatus for contacting gases at high temperature |
US20040188319A1 (en) * | 2003-03-28 | 2004-09-30 | Saint-Gobain Ceramics & Plastics, Inc. | Wafer carrier having improved processing characteristics |
DE10331049B4 (de) * | 2003-07-09 | 2010-04-08 | Saint-Gobain Industriekeramik Rödental GmbH | Verfahren zur Herstellung eines porösen Keramikkörpers, danach hergestellter poröser Keramikkörper und dessen Verwendung |
US20080265471A1 (en) * | 2005-11-07 | 2008-10-30 | Colopy Curtis M | Polycrystalline Sic Electrical Devices and Methods for Fabricating the Same |
WO2012071353A1 (en) | 2010-11-22 | 2012-05-31 | Saint-Gobain Ceramics & Plastics, Inc. | Infiltrated silicon carbide bodies and methods of making |
TW201321331A (zh) * | 2011-11-16 | 2013-06-01 | Tse Jie Entpr Ltd | 陶瓷散熱基材的製造方法 |
EP3046893B1 (en) * | 2013-09-19 | 2018-11-21 | United Technologies Corporation | Method of producing a ceramic article |
US9676631B2 (en) | 2014-07-21 | 2017-06-13 | Lori Bracamonte | Reaction bonded silicon carbide bodies made from high purity carbonaceous preforms |
US9951952B2 (en) | 2014-10-15 | 2018-04-24 | Specialized Component Parts Limited, Inc. | Hot surface igniters and methods of making same |
CN112960983B (zh) * | 2021-03-23 | 2022-10-21 | 中钢集团洛阳耐火材料研究院有限公司 | 一种碳化硅陶瓷复合制品的制备方法 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3951587A (en) * | 1974-12-06 | 1976-04-20 | Norton Company | Silicon carbide diffusion furnace components |
US4295890A (en) * | 1975-12-03 | 1981-10-20 | Ppg Industries, Inc. | Submicron beta silicon carbide powder and sintered articles of high density prepared therefrom |
US4238434A (en) * | 1978-02-16 | 1980-12-09 | Ibigawa Electric Industry Co., Ltd. | Method of producing a silicon carbide sintered body |
JPS54122312A (en) * | 1978-03-15 | 1979-09-21 | Hiroshige Suzuki | Silicon carbide powder for sintering use and preparation thereof |
DE2910059C2 (de) * | 1978-03-15 | 1982-05-19 | Suzuki, Hiroshige, Tokyo | Verfahren zur Herstellung von feinteiligem Siliziumkarbid sowie dessen Verwendung zur Herstellung von hochdichten Sinterkörpern |
JPS59102872A (ja) * | 1982-12-06 | 1984-06-14 | 日本特殊陶業株式会社 | 炭化珪素.黒鉛複合焼結体の製造方法 |
JPS59207873A (ja) * | 1983-05-10 | 1984-11-26 | ティーディーケイ株式会社 | 高密度炭化ケイ素焼結体の製造方法 |
US4525461A (en) * | 1983-12-14 | 1985-06-25 | Kennecott Corporation | Sintered silicon carbide/graphite/carbon composite ceramic body having ultrafine grain microstructure |
DE3371331D1 (en) * | 1983-12-23 | 1987-06-11 | Hoechst Ceram Tec Ag | Slip-casting slurry for manufacturing silicon carbide bodies |
JPS60138913A (ja) * | 1983-12-26 | 1985-07-23 | Toshiba Ceramics Co Ltd | 半導体拡散炉管の製造方法 |
JPS60200861A (ja) * | 1984-03-26 | 1985-10-11 | 住友化学工業株式会社 | 高強度炭化珪素焼結体の製造方法 |
JPS60246264A (ja) * | 1984-05-23 | 1985-12-05 | 東芝セラミツクス株式会社 | 炭化珪素質材料の製造方法 |
US4771021A (en) * | 1985-07-01 | 1988-09-13 | Teruyasu Tamamizu | Semi-conductor diffusion furnace components |
JPS6212666A (ja) * | 1985-07-09 | 1987-01-21 | 東芝セラミツクス株式会社 | 半導体用炉芯管の製造方法 |
US4987103A (en) * | 1986-04-09 | 1991-01-22 | Nippon Pillar Packing Co., Ltd. | Slider composed of a high-density silicon carbide sintered compact |
US4693988A (en) * | 1986-07-01 | 1987-09-15 | Kennecott Corporation | Single phase silicon carbide refractory |
JP2548949B2 (ja) * | 1987-09-01 | 1996-10-30 | 東芝セラミックス株式会社 | 半導体製造用構成部材 |
DE3736660A1 (de) * | 1987-10-29 | 1989-05-11 | Mtu Muenchen Gmbh | Verfahren zur herstellung eines poroesen formkoerpers |
KR910002578B1 (ko) * | 1988-01-19 | 1991-04-27 | 닙폰 가이시 카부시키카이샤 | 고밀도 SiC 소결체의 제조방법 |
US4998879A (en) * | 1988-04-29 | 1991-03-12 | Norton Company | High purity diffusion furnace components |
US4999228A (en) * | 1988-05-06 | 1991-03-12 | Shin-Etsu Chemical Co., Ltd. | Silicon carbide diffusion tube for semi-conductor |
DE3832876A1 (de) * | 1988-09-28 | 1990-04-05 | Hoechst Ceram Tec Ag | Bauteile aus silizium-infiltriertem siliziumcarbid mit poroeser oberflaeche und verfahren zu ihrer herstellung |
US5094985A (en) * | 1989-01-30 | 1992-03-10 | Kazunori Kijima Kyoto | Sintered silicon carbide body with high thermal conductivity and process of producing the same |
EP0486938B1 (en) * | 1990-11-20 | 1999-05-19 | Asahi Glass Company Ltd. | Heat treating apparatuses for semiconductors and high purity silicon carbide parts for the apparatuses and a method of making thereof |
US5422322A (en) * | 1993-02-10 | 1995-06-06 | The Stackpole Corporation | Dense, self-sintered silicon carbide/carbon-graphite composite and process for producing same |
US5486496A (en) * | 1994-06-10 | 1996-01-23 | Alumina Ceramics Co. (Aci) | Graphite-loaded silicon carbide |
AU5180496A (en) * | 1995-03-01 | 1996-09-18 | Saint-Gobain/Norton Industrial Ceramics Corporation | Novel silicon carbide dummy wafer |
US5702997A (en) * | 1996-10-04 | 1997-12-30 | Saint-Gobain/Norton Industrial Ceramics Corp. | Process for making crack-free silicon carbide diffusion components |
-
1996
- 1996-10-04 US US08/725,717 patent/US5702997A/en not_active Expired - Lifetime
-
1997
- 1997-09-10 US US08/926,640 patent/US5902760A/en not_active Expired - Lifetime
- 1997-09-10 US US08/926,708 patent/US5840639A/en not_active Expired - Lifetime
- 1997-10-03 CN CN97198553A patent/CN1068861C/zh not_active Expired - Fee Related
- 1997-10-03 DE DE69714275T patent/DE69714275T2/de not_active Expired - Lifetime
- 1997-10-03 EP EP97944628A patent/EP0931033B1/en not_active Expired - Lifetime
- 1997-10-03 WO PCT/US1997/018033 patent/WO1998014411A1/en active IP Right Grant
- 1997-10-03 AU AU46081/97A patent/AU4608197A/en not_active Abandoned
- 1997-10-03 JP JP51695998A patent/JP3237760B2/ja not_active Expired - Lifetime
- 1997-10-03 CA CA002267854A patent/CA2267854C/en not_active Expired - Fee Related
-
1999
- 1999-03-26 US US09/277,832 patent/US5972818A/en not_active Expired - Lifetime
- 1999-04-03 KR KR1019997002922A patent/KR100306353B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP3237760B2 (ja) | 2001-12-10 |
EP0931033A1 (en) | 1999-07-28 |
DE69714275T2 (de) | 2003-03-20 |
EP0931033B1 (en) | 2002-07-24 |
KR100306353B1 (ko) | 2001-09-13 |
CN1068861C (zh) | 2001-07-25 |
KR20000048896A (ko) | 2000-07-25 |
US5972818A (en) | 1999-10-26 |
CA2267854A1 (en) | 1998-04-09 |
US5902760A (en) | 1999-05-11 |
US5840639A (en) | 1998-11-24 |
WO1998014411A1 (en) | 1998-04-09 |
DE69714275D1 (de) | 2002-08-29 |
US5702997A (en) | 1997-12-30 |
CA2267854C (en) | 2002-02-19 |
CN1232440A (zh) | 1999-10-20 |
AU4608197A (en) | 1998-04-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2000503970A (ja) | クラックがない炭化ケイ素拡散部品の製造方法 | |
KR100276154B1 (ko) | 테이프 캐스트 탄화규소 더미웨이퍼 | |
KR101212924B1 (ko) | 실리콘 결정화용 도가니 및 이를 제조하는 방법 | |
JPH06100370A (ja) | 窒化ケイ素系焼結体及びその製造方法 | |
US5352641A (en) | Silicon nitride composite sintered body and process for producing same | |
EP0783467B1 (en) | Reaction-bonded silicon carbide refractory product | |
JPH0228539B2 (ja) | ||
JP3475614B2 (ja) | シリコンジイミド | |
JPS6152106B2 (ja) | ||
JP4382919B2 (ja) | シリコン含浸炭化珪素セラミックス部材の製造方法 | |
JPH0553747B2 (ja) | ||
JP2002513374A (ja) | 高い強度と応力破断抵抗を有するガス圧焼結された窒化ケイ素 | |
JP2000109367A (ja) | 炭化ケイ素焼結体の熱処理方法および炭化ケイ素熱処理体 | |
JPH06219828A (ja) | ムライト・炭化珪素複合セラミックスの製造方法 | |
JPH09268085A (ja) | 炭化珪素質多孔体の製造方法 | |
JPH0463028B2 (ja) | ||
JPH06191931A (ja) | アルミナ焼結体用組成物及びアルミナ焼結体 | |
JP2671539B2 (ja) | 窒化珪素焼結体の製造方法 | |
JPS6344713B2 (ja) | ||
JPS6126514B2 (ja) | ||
JPS6362450B2 (ja) | ||
JP2003081682A (ja) | シリコン含浸炭化ケイ素セラミックスの製造方法 | |
JPS63117962A (ja) | 炭化珪素質焼結体及びその製造方法 | |
JPH05306172A (ja) | 高温強度および耐酸化性に優れた窒化ケイ素焼結体およびその製造方法 | |
JP2005314157A (ja) | 炭化珪素焼結体およびこれを用いた半導体および液晶製造装置用部材 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081005 Year of fee payment: 7 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091005 Year of fee payment: 8 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091005 Year of fee payment: 8 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101005 Year of fee payment: 9 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101005 Year of fee payment: 9 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111005 Year of fee payment: 10 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121005 Year of fee payment: 11 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121005 Year of fee payment: 11 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131005 Year of fee payment: 12 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |