JP2000228527A5 - - Google Patents
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- Publication number
- JP2000228527A5 JP2000228527A5 JP1999345498A JP34549899A JP2000228527A5 JP 2000228527 A5 JP2000228527 A5 JP 2000228527A5 JP 1999345498 A JP1999345498 A JP 1999345498A JP 34549899 A JP34549899 A JP 34549899A JP 2000228527 A5 JP2000228527 A5 JP 2000228527A5
- Authority
- JP
- Japan
- Prior art keywords
- conductive layer
- impurity region
- impurity
- conductive
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000012535 impurity Substances 0.000 description 68
- 239000004065 semiconductor Substances 0.000 description 53
- 239000010408 film Substances 0.000 description 42
- 239000010409 thin film Substances 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34549899A JP4531175B2 (ja) | 1998-12-03 | 1999-12-03 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34474698 | 1998-12-03 | ||
| JP10-344746 | 1998-12-03 | ||
| JP34549899A JP4531175B2 (ja) | 1998-12-03 | 1999-12-03 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000228527A JP2000228527A (ja) | 2000-08-15 |
| JP2000228527A5 true JP2000228527A5 (enrdf_load_stackoverflow) | 2007-01-25 |
| JP4531175B2 JP4531175B2 (ja) | 2010-08-25 |
Family
ID=26577855
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34549899A Expired - Fee Related JP4531175B2 (ja) | 1998-12-03 | 1999-12-03 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4531175B2 (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7405115B2 (en) | 2001-02-28 | 2008-07-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US7652294B2 (en) | 2000-03-08 | 2010-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6872604B2 (en) | 2000-06-05 | 2005-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a light emitting device |
| JP2012089878A (ja) * | 2000-08-25 | 2012-05-10 | Semiconductor Energy Lab Co Ltd | 発光装置 |
| JP4850328B2 (ja) * | 2000-08-29 | 2012-01-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2002076352A (ja) * | 2000-08-31 | 2002-03-15 | Semiconductor Energy Lab Co Ltd | 表示装置及びその作製方法 |
| SG148819A1 (en) * | 2000-09-14 | 2009-01-29 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
| JP5046451B2 (ja) * | 2000-09-22 | 2012-10-10 | 株式会社半導体エネルギー研究所 | 半導体表示装置の作製方法 |
| US6509616B2 (en) * | 2000-09-29 | 2003-01-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and its manufacturing method |
| JP5046452B2 (ja) | 2000-10-26 | 2012-10-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4316831B2 (ja) * | 2000-11-28 | 2009-08-19 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4954366B2 (ja) * | 2000-11-28 | 2012-06-13 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP3522216B2 (ja) | 2000-12-19 | 2004-04-26 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに液晶表示装置 |
| JP4932081B2 (ja) * | 2000-12-27 | 2012-05-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4801262B2 (ja) * | 2001-01-30 | 2011-10-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4693257B2 (ja) * | 2001-02-21 | 2011-06-01 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4593256B2 (ja) * | 2001-02-28 | 2010-12-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4044360B2 (ja) * | 2001-04-19 | 2008-02-06 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| US7112844B2 (en) | 2001-04-19 | 2006-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP4831885B2 (ja) | 2001-04-27 | 2011-12-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP3961240B2 (ja) | 2001-06-28 | 2007-08-22 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2006269808A (ja) * | 2005-03-24 | 2006-10-05 | Mitsubishi Electric Corp | 半導体装置および画像表示装置 |
| US7588970B2 (en) | 2005-06-10 | 2009-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP5090708B2 (ja) | 2006-10-20 | 2012-12-05 | 株式会社ジャパンディスプレイイースト | 画像表示装置とその製造方法 |
| KR100749478B1 (ko) * | 2006-11-21 | 2007-08-14 | 삼성에스디아이 주식회사 | 고상 결정화 장치 및 이를 이용한 박막 트랜지스터의 제조방법 |
| JP2007134730A (ja) * | 2006-12-01 | 2007-05-31 | Semiconductor Energy Lab Co Ltd | 表示装置 |
| KR100958640B1 (ko) * | 2008-06-09 | 2010-05-20 | 삼성모바일디스플레이주식회사 | 커패시터와 박막 트랜지스터를 갖는 기판, 이를 구비한평판 디스플레이 장치 및 상기 커패시터와 박막트랜지스터를 갖는 기판의 제조방법 |
| JP2012043819A (ja) * | 2008-08-29 | 2012-03-01 | Ulvac Japan Ltd | 薄膜トランジスタの製造方法及び薄膜トランジスタ |
| JP2011158910A (ja) * | 2011-03-02 | 2011-08-18 | Semiconductor Energy Lab Co Ltd | 表示装置の作製方法 |
| JP5380560B2 (ja) * | 2012-02-08 | 2014-01-08 | 株式会社半導体エネルギー研究所 | 表示装置、半導体装置、表示モジュール及び電子機器 |
| JP6446204B2 (ja) * | 2014-08-27 | 2018-12-26 | 株式会社ジャパンディスプレイ | 表示装置 |
| JP6851166B2 (ja) * | 2015-10-12 | 2021-03-31 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP6579086B2 (ja) * | 2016-11-15 | 2019-09-25 | 信越半導体株式会社 | デバイス形成方法 |
| JP6412181B2 (ja) * | 2017-02-22 | 2018-10-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| WO2023157293A1 (ja) * | 2022-02-21 | 2023-08-24 | シャープディスプレイテクノロジー株式会社 | 表示装置 |
| CN116544246A (zh) * | 2023-07-07 | 2023-08-04 | 深圳市华星光电半导体显示技术有限公司 | 阵列基板及显示面板 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07335904A (ja) * | 1994-06-14 | 1995-12-22 | Semiconductor Energy Lab Co Ltd | 薄膜半導体集積回路 |
| JPH0955508A (ja) * | 1995-08-10 | 1997-02-25 | Sanyo Electric Co Ltd | 薄膜トランジスタ及びその製造方法 |
| JPH09298304A (ja) * | 1996-05-08 | 1997-11-18 | Semiconductor Energy Lab Co Ltd | 液晶表示装置の製造方法および半導体装置の製造方法 |
-
1999
- 1999-12-03 JP JP34549899A patent/JP4531175B2/ja not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7652294B2 (en) | 2000-03-08 | 2010-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US7728334B2 (en) | 2000-03-08 | 2010-06-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US8198630B2 (en) | 2000-03-08 | 2012-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US8586988B2 (en) | 2000-03-08 | 2013-11-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US7405115B2 (en) | 2001-02-28 | 2008-07-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |