JP2000156480A5 - - Google Patents

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Publication number
JP2000156480A5
JP2000156480A5 JP1998250162A JP25016298A JP2000156480A5 JP 2000156480 A5 JP2000156480 A5 JP 2000156480A5 JP 1998250162 A JP1998250162 A JP 1998250162A JP 25016298 A JP25016298 A JP 25016298A JP 2000156480 A5 JP2000156480 A5 JP 2000156480A5
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JP
Japan
Prior art keywords
insulating film
wiring
forming
misfet
plug
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1998250162A
Other languages
English (en)
Japanese (ja)
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JP2000156480A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP10250162A priority Critical patent/JP2000156480A/ja
Priority claimed from JP10250162A external-priority patent/JP2000156480A/ja
Priority to TW088113676A priority patent/TW451461B/zh
Priority to KR1019990037064A priority patent/KR100681851B1/ko
Priority to US09/389,231 priority patent/US6258649B1/en
Publication of JP2000156480A publication Critical patent/JP2000156480A/ja
Priority to US09/880,959 priority patent/US20010028082A1/en
Priority to US10/335,874 priority patent/US20030132479A1/en
Publication of JP2000156480A5 publication Critical patent/JP2000156480A5/ja
Pending legal-status Critical Current

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JP10250162A 1998-09-03 1998-09-03 半導体集積回路装置およびその製造方法 Pending JP2000156480A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP10250162A JP2000156480A (ja) 1998-09-03 1998-09-03 半導体集積回路装置およびその製造方法
TW088113676A TW451461B (en) 1998-09-03 1999-08-10 Semiconductor integrated circuit device and method of manufacturing the same
KR1019990037064A KR100681851B1 (ko) 1998-09-03 1999-09-02 반도체집적회로장치 및 그 제조방법
US09/389,231 US6258649B1 (en) 1998-09-03 1999-09-03 Semiconductor integrated circuit device and method of manufacturing the same
US09/880,959 US20010028082A1 (en) 1998-09-03 2001-06-15 Semiconductor integrated circuit device and method of manufacturing the same
US10/335,874 US20030132479A1 (en) 1998-09-03 2003-01-03 Semiconductor integrated circuit device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10250162A JP2000156480A (ja) 1998-09-03 1998-09-03 半導体集積回路装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2000156480A JP2000156480A (ja) 2000-06-06
JP2000156480A5 true JP2000156480A5 (enExample) 2004-09-16

Family

ID=17203754

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10250162A Pending JP2000156480A (ja) 1998-09-03 1998-09-03 半導体集積回路装置およびその製造方法

Country Status (4)

Country Link
US (3) US6258649B1 (enExample)
JP (1) JP2000156480A (enExample)
KR (1) KR100681851B1 (enExample)
TW (1) TW451461B (enExample)

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US6710425B2 (en) * 2001-04-26 2004-03-23 Zeevo, Inc. Structure to increase density of MIM capacitors between adjacent metal layers in an integrated circuit
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JP2004140198A (ja) * 2002-10-18 2004-05-13 Oki Electric Ind Co Ltd 半導体装置およびその製造方法
KR100930336B1 (ko) * 2002-12-27 2009-12-08 후지쯔 마이크로일렉트로닉스 가부시키가이샤 반도체 장치, ｄｒａｍ 집적 회로 장치 및 그 제조 방법
TWI226101B (en) * 2003-06-19 2005-01-01 Advanced Semiconductor Eng Build-up manufacturing process of IC substrate with embedded parallel capacitor
JP4591809B2 (ja) * 2003-06-27 2010-12-01 エルピーダメモリ株式会社 微細化に対応したメモリアレイ領域のレイアウト方法
JP4658486B2 (ja) * 2003-06-30 2011-03-23 ルネサスエレクトロニクス株式会社 半導体装置とその製造方法
US7037840B2 (en) * 2004-01-26 2006-05-02 Micron Technology, Inc. Methods of forming planarized surfaces over semiconductor substrates
US7279379B2 (en) * 2004-04-26 2007-10-09 Micron Technology, Inc. Methods of forming memory arrays; and methods of forming contacts to bitlines
JP4897201B2 (ja) * 2004-05-31 2012-03-14 ルネサスエレクトロニクス株式会社 半導体装置
US7772108B2 (en) * 2004-06-25 2010-08-10 Samsung Electronics Co., Ltd. Interconnection structures for semiconductor devices and methods of forming the same
KR100626378B1 (ko) * 2004-06-25 2006-09-20 삼성전자주식회사 반도체 장치의 배선 구조체 및 그 형성 방법
US8012847B2 (en) * 2005-04-01 2011-09-06 Micron Technology, Inc. Methods of forming trench isolation in the fabrication of integrated circuitry and methods of fabricating integrated circuitry
JP2006302987A (ja) * 2005-04-18 2006-11-02 Nec Electronics Corp 半導体装置およびその製造方法
JP5096669B2 (ja) 2005-07-06 2012-12-12 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
JP4205734B2 (ja) * 2006-05-25 2009-01-07 エルピーダメモリ株式会社 半導体装置の製造方法
US20080128813A1 (en) * 2006-11-30 2008-06-05 Ichiro Mizushima Semiconductor Device and Manufacturing Method Thereof
KR100811442B1 (ko) * 2007-02-09 2008-03-07 주식회사 하이닉스반도체 반도체 소자 및 그의 제조 방법
KR101406225B1 (ko) * 2008-04-11 2014-06-13 삼성전자주식회사 반도체 소자의 제조방법
US20100224960A1 (en) * 2009-03-04 2010-09-09 Kevin John Fischer Embedded capacitor device and methods of fabrication
KR101195268B1 (ko) * 2011-02-14 2012-11-14 에스케이하이닉스 주식회사 커패시터 및 복층 금속 콘택을 포함하는 반도체 소자 및 형성 방법
JP5797595B2 (ja) * 2012-03-23 2015-10-21 東京エレクトロン株式会社 成膜装置のパーツ保護方法および成膜方法
KR20140130594A (ko) * 2013-05-01 2014-11-11 삼성전자주식회사 콘택 플러그를 포함하는 반도체 소자 및 그 제조 방법
US9478490B2 (en) * 2014-09-10 2016-10-25 Qualcomm Incorporated Capacitor from second level middle-of-line layer in combination with decoupling capacitors
US10566334B2 (en) 2018-05-11 2020-02-18 Micron Technology, Inc. Methods used in forming integrated circuitry including forming first, second, and third contact openings
US12171104B2 (en) 2018-09-28 2024-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Method and structures pertaining to improved ferroelectric random-access memory (FeRAM)
US11723213B2 (en) 2018-09-28 2023-08-08 Taiwan Semiconductor Manufacturing Company, Ltd. Method and structures pertaining to improved ferroelectric random-access memory (FeRAM)
US10777456B1 (en) * 2019-03-18 2020-09-15 Tokyo Electron Limited Semiconductor back end of line (BEOL) interconnect using multiple materials in a fully self-aligned via (FSAV) process
US20220293743A1 (en) * 2021-03-10 2022-09-15 Invention And Collaboration Laboratory Pte. Ltd. Manufacture method for interconnection structure
DE102021118788A1 (de) * 2021-07-15 2023-01-19 Taiwan Semiconductor Manufacturing Co., Ltd. VERFAHREN UND STRUKTUREN FÜR VERBESSERTEN FERROELEKTRISCHEN DIREKTZUGRIFFSSPEICHER (FeRAM)

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