JP2000137983A5 - - Google Patents

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Publication number
JP2000137983A5
JP2000137983A5 JP1999232828A JP23282899A JP2000137983A5 JP 2000137983 A5 JP2000137983 A5 JP 2000137983A5 JP 1999232828 A JP1999232828 A JP 1999232828A JP 23282899 A JP23282899 A JP 23282899A JP 2000137983 A5 JP2000137983 A5 JP 2000137983A5
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JP
Japan
Prior art keywords
memory cell
write operation
write
information
time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1999232828A
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English (en)
Japanese (ja)
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JP2000137983A (ja
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Publication date
Application filed filed Critical
Priority to JP23282899A priority Critical patent/JP2000137983A/ja
Priority claimed from JP23282899A external-priority patent/JP2000137983A/ja
Priority to US09/383,193 priority patent/US6484246B2/en
Publication of JP2000137983A publication Critical patent/JP2000137983A/ja
Priority to US10/175,085 priority patent/US6647478B2/en
Priority to US10/337,977 priority patent/US6615309B2/en
Priority to US10/681,184 priority patent/US7085881B2/en
Publication of JP2000137983A5 publication Critical patent/JP2000137983A5/ja
Pending legal-status Critical Current

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JP23282899A 1998-08-26 1999-08-19 半導体記憶装置 Pending JP2000137983A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP23282899A JP2000137983A (ja) 1998-08-26 1999-08-19 半導体記憶装置
US09/383,193 US6484246B2 (en) 1998-08-26 1999-08-26 High-speed random access semiconductor memory device
US10/175,085 US6647478B2 (en) 1998-08-26 2002-06-20 Semiconductor memory device
US10/337,977 US6615309B2 (en) 1998-08-26 2003-01-08 Semiconductor memory device
US10/681,184 US7085881B2 (en) 1998-08-26 2003-10-09 Semiconductor memory device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10-240161 1998-08-26
JP24016198 1998-08-26
JP23282899A JP2000137983A (ja) 1998-08-26 1999-08-19 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2000137983A JP2000137983A (ja) 2000-05-16
JP2000137983A5 true JP2000137983A5 (https=) 2006-10-05

Family

ID=26530687

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23282899A Pending JP2000137983A (ja) 1998-08-26 1999-08-19 半導体記憶装置

Country Status (2)

Country Link
US (4) US6484246B2 (https=)
JP (1) JP2000137983A (https=)

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JP4651206B2 (ja) * 2001-02-21 2011-03-16 富士通セミコンダクター株式会社 半導体記憶装置および情報処理装置
US7043598B2 (en) * 2001-12-31 2006-05-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for dynamic memory refreshing
US7103126B2 (en) * 2002-01-17 2006-09-05 Micron Technology, Inc. Method and circuit for adjusting the timing of output data based on the current and future states of the output data
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US7565509B2 (en) * 2002-04-17 2009-07-21 Microsoft Corporation Using limits on address translation to control access to an addressable entity
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US6934199B2 (en) 2002-12-11 2005-08-23 Micron Technology, Inc. Memory device and method having low-power, high write latency mode and high-power, low write latency mode and/or independently selectable write latency
US7099221B2 (en) 2004-05-06 2006-08-29 Micron Technology, Inc. Memory controller method and system compensating for memory cell data losses
JP4827399B2 (ja) * 2004-05-26 2011-11-30 ルネサスエレクトロニクス株式会社 半導体記憶装置
US20060010339A1 (en) 2004-06-24 2006-01-12 Klein Dean A Memory system and method having selective ECC during low power refresh
US7340668B2 (en) 2004-06-25 2008-03-04 Micron Technology, Inc. Low power cost-effective ECC memory system and method
KR100608882B1 (ko) * 2004-06-30 2006-08-08 엘지전자 주식회사 무전극 조명기기의 도파관 시스템
US7254864B2 (en) * 2004-07-01 2007-08-14 Royal Appliance Mfg. Co. Hard floor cleaner
US7116602B2 (en) 2004-07-15 2006-10-03 Micron Technology, Inc. Method and system for controlling refresh to avoid memory cell data losses
US8190808B2 (en) * 2004-08-17 2012-05-29 Rambus Inc. Memory device having staggered memory operations
JP5007485B2 (ja) * 2004-08-26 2012-08-22 ソニー株式会社 半導体記憶装置およびそのアクセス方法、並びにメモリ制御システム
US6965537B1 (en) 2004-08-31 2005-11-15 Micron Technology, Inc. Memory system and method using ECC to achieve low power refresh
KR100564633B1 (ko) * 2004-09-25 2006-03-28 삼성전자주식회사 향상된 동작 성능을 가지는 반도체 메모리 장치 및 이에대한 액세스 제어 방법
JP2007036425A (ja) * 2005-07-25 2007-02-08 Pentax Corp アナログ機器駆動システムおよび撮像装置
TWI410970B (zh) 2005-07-29 2013-10-01 Ibm 控制記憶體的方法及記憶體系統
US7403446B1 (en) 2005-09-27 2008-07-22 Cypress Semiconductor Corporation Single late-write for standard synchronous SRAMs
US7894289B2 (en) 2006-10-11 2011-02-22 Micron Technology, Inc. Memory system and method using partial ECC to achieve low power refresh and fast access to data
US7900120B2 (en) 2006-10-18 2011-03-01 Micron Technology, Inc. Memory system and method using ECC with flag bit to identify modified data
KR100868251B1 (ko) 2007-03-22 2008-11-12 주식회사 하이닉스반도체 반도체 메모리장치
KR100945794B1 (ko) * 2008-05-02 2010-03-08 주식회사 하이닉스반도체 반도체 집적회로 및 그 어드레스/커맨드 처리방법
JP2010113435A (ja) 2008-11-05 2010-05-20 Sanyo Electric Co Ltd メモリアクセス装置
JP2011100442A (ja) * 2009-10-06 2011-05-19 Semiconductor Energy Lab Co Ltd 無線通信機能を有する半導体装置
KR101043726B1 (ko) * 2009-10-06 2011-06-24 주식회사 하이닉스반도체 반도체 메모리장치 및 이의 동작방법
DE102009051200B4 (de) * 2009-10-29 2014-06-18 Siemens Medical Instruments Pte. Ltd. Hörgerät und Verfahren zur Rückkopplungsunterdrückung mit einem Richtmikrofon
US8250298B2 (en) * 2010-05-27 2012-08-21 International Business Machines Corporation Mechanisms for reducing DRAM power consumption
WO2013046734A1 (ja) * 2011-09-27 2013-04-04 三菱電機株式会社 スレーブ装置、マスター装置及び通信方法
JP6072449B2 (ja) 2012-07-09 2017-02-01 ルネサスエレクトロニクス株式会社 半導体記憶回路及びその動作方法
US10607671B2 (en) * 2018-02-17 2020-03-31 Micron Technology, Inc. Timing circuit for command path in a memory device
US10896133B2 (en) * 2018-05-31 2021-01-19 Microsoft Technology Licensing, Llc Combinational address repair in memory controller
US11188264B2 (en) * 2020-02-03 2021-11-30 Intel Corporation Configurable write command delay in nonvolatile memory

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TW348266B (en) 1996-03-11 1998-12-21 Toshiba Co Ltd Semiconductor memory device
JP2888201B2 (ja) 1996-07-30 1999-05-10 日本電気株式会社 半導体メモリ集積回路
JP3604861B2 (ja) * 1997-03-11 2004-12-22 株式会社ルネサステクノロジ 半導体記憶装置
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JPH11306751A (ja) 1998-04-22 1999-11-05 Toshiba Corp 半導体記憶装置
JP4226686B2 (ja) 1998-05-07 2009-02-18 株式会社東芝 半導体メモリシステム及び半導体メモリのアクセス制御方法及び半導体メモリ
US6295231B1 (en) 1998-07-17 2001-09-25 Kabushiki Kaisha Toshiba High-speed cycle clock-synchronous memory device
JP4555416B2 (ja) * 1999-09-22 2010-09-29 富士通セミコンダクター株式会社 半導体集積回路およびその制御方法
TW522399B (en) * 1999-12-08 2003-03-01 Hitachi Ltd Semiconductor device
US6151236A (en) * 2000-02-29 2000-11-21 Enhanced Memory Systems, Inc. Enhanced bus turnaround integrated circuit dynamic random access memory device
US6275437B1 (en) * 2000-06-30 2001-08-14 Samsung Electronics Co., Ltd. Refresh-type memory with zero write recovery time and no maximum cycle time

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