JP2000124122A - 半導体露光装置および同装置を用いるデバイス製造方法 - Google Patents

半導体露光装置および同装置を用いるデバイス製造方法

Info

Publication number
JP2000124122A
JP2000124122A JP10313957A JP31395798A JP2000124122A JP 2000124122 A JP2000124122 A JP 2000124122A JP 10313957 A JP10313957 A JP 10313957A JP 31395798 A JP31395798 A JP 31395798A JP 2000124122 A JP2000124122 A JP 2000124122A
Authority
JP
Japan
Prior art keywords
wafer
exposure apparatus
semiconductor exposure
contamination
foreign matter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10313957A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000124122A5 (enExample
Inventor
Hiroaki Takeishi
洋明 武石
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP10313957A priority Critical patent/JP2000124122A/ja
Priority to US09/418,253 priority patent/US6456374B1/en
Publication of JP2000124122A publication Critical patent/JP2000124122A/ja
Priority to US10/207,768 priority patent/US6897949B2/en
Publication of JP2000124122A5 publication Critical patent/JP2000124122A5/ja
Priority to US11/114,158 priority patent/US7339662B2/en
Priority to US11/467,710 priority patent/US7518717B2/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026—Focusing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/06—Silver salts
    • G03F7/063—Additives or means to improve the lithographic properties; Processing solutions characterised by such additives; Treatment after development or transfer, e.g. finishing, washing; Correction or deletion fluids
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP10313957A 1998-10-19 1998-10-19 半導体露光装置および同装置を用いるデバイス製造方法 Pending JP2000124122A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP10313957A JP2000124122A (ja) 1998-10-19 1998-10-19 半導体露光装置および同装置を用いるデバイス製造方法
US09/418,253 US6456374B1 (en) 1998-10-19 1999-10-15 Exposure apparatus and a device manufacturing method using the same
US10/207,768 US6897949B2 (en) 1998-10-19 2002-07-31 Exposure apparatus and a device manufacturing method using the same
US11/114,158 US7339662B2 (en) 1998-10-19 2005-04-26 Exposure apparatus and a device manufacturing method using the same
US11/467,710 US7518717B2 (en) 1998-10-19 2006-08-28 Exposure apparatus and a device manufacturing method using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10313957A JP2000124122A (ja) 1998-10-19 1998-10-19 半導体露光装置および同装置を用いるデバイス製造方法

Publications (2)

Publication Number Publication Date
JP2000124122A true JP2000124122A (ja) 2000-04-28
JP2000124122A5 JP2000124122A5 (enExample) 2004-12-09

Family

ID=18047532

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10313957A Pending JP2000124122A (ja) 1998-10-19 1998-10-19 半導体露光装置および同装置を用いるデバイス製造方法

Country Status (2)

Country Link
US (4) US6456374B1 (enExample)
JP (1) JP2000124122A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007001045A1 (ja) * 2005-06-29 2007-01-04 Nikon Corporation 露光装置、基板処理方法、及びデバイス製造方法
JP2007311734A (ja) * 2005-06-29 2007-11-29 Nikon Corp 露光装置、基板処理方法、及びデバイス製造方法
JP2016200480A (ja) * 2015-04-09 2016-12-01 東京エレクトロン株式会社 異物検出方法、異物検出装置および剥離装置
US10160015B2 (en) 2015-04-09 2018-12-25 Tokyo Electron Limited Foreign substance removal apparatus and foreign substance detection apparatus
JP2020003737A (ja) * 2018-06-29 2020-01-09 キヤノン株式会社 露光装置および物品の製造方法
CN113109258A (zh) * 2020-01-10 2021-07-13 东京毅力科创株式会社 载置台的异物的检测方法以及检测装置

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JP2000124122A (ja) * 1998-10-19 2000-04-28 Canon Inc 半導体露光装置および同装置を用いるデバイス製造方法
US6277765B1 (en) * 1999-08-17 2001-08-21 Intel Corporation Low-K Dielectric layer and method of making same
JP3870058B2 (ja) * 2001-10-05 2007-01-17 キヤノン株式会社 スキャン露光装置及び方法並びにデバイスの製造方法
KR100577559B1 (ko) * 2003-12-03 2006-05-08 삼성전자주식회사 반도체소자 제조설비의 웨이퍼 척 조명장치
DE102004050642B4 (de) * 2004-10-18 2007-04-12 Infineon Technologies Ag Verfahren zur Überwachung von Parametern eines Belichtungsgerätes für die Immersionslithographie und Belichtungsgerät für die Immersionslithographie
JP2007103658A (ja) * 2005-10-04 2007-04-19 Canon Inc 露光方法および装置ならびにデバイス製造方法
US20080126014A1 (en) * 2006-08-22 2008-05-29 Yuanting Cui Statistical method and automated system for detection of particulate matter on wafer processing chucks
TWI462164B (zh) * 2009-11-13 2014-11-21 Inotera Memories Inc 清潔晶圓載盤的方法
US8654325B2 (en) * 2011-07-05 2014-02-18 Tokyo Electron Limited Substrate processing apparatus, substrate processing method, and computer-readable storage medium having program for executing the substrate processing method stored therein
US20230341784A1 (en) * 2020-08-11 2023-10-26 Asml Netherlands B.V. Method and apparatus for identifying contamination in a semiconductor fab

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JPH01264220A (ja) 1988-04-14 1989-10-20 Mitsubishi Electric Corp 縮小投影露光装置
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JPH0737772A (ja) 1993-07-16 1995-02-07 Fujitsu Ltd ステッパとその露光方法
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US6018384A (en) * 1994-09-07 2000-01-25 Nikon Corporation Projection exposure system
JPH08145645A (ja) * 1994-11-28 1996-06-07 Nikon Corp 傾き検出装置
US5777744A (en) * 1995-05-16 1998-07-07 Canon Kabushiki Kaisha Exposure state detecting system and exposure apparatus using the same
US5737063A (en) * 1995-07-11 1998-04-07 Nikon Corporation Projection exposure apparatus
JP3634068B2 (ja) * 1995-07-13 2005-03-30 株式会社ニコン 露光方法及び装置
JPH0936033A (ja) * 1995-07-24 1997-02-07 Sony Corp 半導体露光装置
NZ272994A (en) * 1995-09-12 2001-06-29 C G Surgical Ltd Spinal prosthesis device which stabilises lamina after laminoplasty
JPH09237752A (ja) * 1996-03-01 1997-09-09 Nikon Corp 投影光学系の調整方法及び該方法を使用する投影露光装置
JPH09320921A (ja) * 1996-05-24 1997-12-12 Nikon Corp ベースライン量の測定方法及び投影露光装置
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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007001045A1 (ja) * 2005-06-29 2007-01-04 Nikon Corporation 露光装置、基板処理方法、及びデバイス製造方法
JP2007311734A (ja) * 2005-06-29 2007-11-29 Nikon Corp 露光装置、基板処理方法、及びデバイス製造方法
JP2016200480A (ja) * 2015-04-09 2016-12-01 東京エレクトロン株式会社 異物検出方法、異物検出装置および剥離装置
US10160015B2 (en) 2015-04-09 2018-12-25 Tokyo Electron Limited Foreign substance removal apparatus and foreign substance detection apparatus
US10946419B2 (en) 2015-04-09 2021-03-16 Tokyo Electron Limited Foreign substance removal apparatus and foreign substance detection apparatus
JP2020003737A (ja) * 2018-06-29 2020-01-09 キヤノン株式会社 露光装置および物品の製造方法
JP7114370B2 (ja) 2018-06-29 2022-08-08 キヤノン株式会社 露光装置および物品の製造方法
CN113109258A (zh) * 2020-01-10 2021-07-13 东京毅力科创株式会社 载置台的异物的检测方法以及检测装置
JP2021110646A (ja) * 2020-01-10 2021-08-02 東京エレクトロン株式会社 載置台における異物の検出方法、及び、検出装置
JP7353190B2 (ja) 2020-01-10 2023-09-29 東京エレクトロン株式会社 載置台における異物の検出方法、及び、検出装置
CN113109258B (zh) * 2020-01-10 2024-06-04 东京毅力科创株式会社 载置台的异物的检测方法以及检测装置
TWI875913B (zh) * 2020-01-10 2025-03-11 日商東京威力科創股份有限公司 載置台的異物之檢測方法及檢測裝置

Also Published As

Publication number Publication date
US7518717B2 (en) 2009-04-14
US20020063865A1 (en) 2002-05-30
US20050185164A1 (en) 2005-08-25
US20020191180A1 (en) 2002-12-19
US6456374B1 (en) 2002-09-24
US7339662B2 (en) 2008-03-04
US20070030465A1 (en) 2007-02-08
US6897949B2 (en) 2005-05-24

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