JP2000031156A - 粗さを抑えた外因性ベ―スを有するたて形バイポ―ラトランジスタとその製造方法 - Google Patents

粗さを抑えた外因性ベ―スを有するたて形バイポ―ラトランジスタとその製造方法

Info

Publication number
JP2000031156A
JP2000031156A JP11156070A JP15607099A JP2000031156A JP 2000031156 A JP2000031156 A JP 2000031156A JP 11156070 A JP11156070 A JP 11156070A JP 15607099 A JP15607099 A JP 15607099A JP 2000031156 A JP2000031156 A JP 2000031156A
Authority
JP
Japan
Prior art keywords
layer
silicon
silicon nitride
base
window
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11156070A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000031156A5 (enExample
Inventor
Michel Marty
ミシェル・マルティ
Alain Chantre
アラン・シャントル
Jorge Regolini
ジョージ・レゴリニ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
STMicroelectronics lnc USA
Original Assignee
Commissariat a lEnergie Atomique CEA
STMicroelectronics lnc USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, STMicroelectronics lnc USA filed Critical Commissariat a lEnergie Atomique CEA
Publication of JP2000031156A publication Critical patent/JP2000031156A/ja
Publication of JP2000031156A5 publication Critical patent/JP2000031156A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H10D10/891—Vertical heterojunction BJTs comprising lattice-mismatched active layers, e.g. SiGe strained-layer transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H10D62/138—Pedestal collectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs

Landscapes

  • Bipolar Transistors (AREA)
JP11156070A 1998-06-05 1999-06-03 粗さを抑えた外因性ベ―スを有するたて形バイポ―ラトランジスタとその製造方法 Pending JP2000031156A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9807061 1998-06-05
FR9807061A FR2779573B1 (fr) 1998-06-05 1998-06-05 Transistor bipolaire vertical comportant une base extrinseque de rugosite reduite, et procede de fabrication

Publications (2)

Publication Number Publication Date
JP2000031156A true JP2000031156A (ja) 2000-01-28
JP2000031156A5 JP2000031156A5 (enExample) 2006-07-20

Family

ID=9527039

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11156070A Pending JP2000031156A (ja) 1998-06-05 1999-06-03 粗さを抑えた外因性ベ―スを有するたて形バイポ―ラトランジスタとその製造方法

Country Status (4)

Country Link
US (2) US6316818B1 (enExample)
EP (1) EP0962985A1 (enExample)
JP (1) JP2000031156A (enExample)
FR (1) FR2779573B1 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004502300A (ja) * 2000-06-26 2004-01-22 テレフオンアクチーボラゲツト　エル　エム　エリクソン アンチモニ注入による高周波トランジスタ装置及び製造方法
JP2004111975A (ja) * 2002-09-19 2004-04-08 Samsung Electronics Co Ltd バイポーラトランジスタ及びその製造方法
JP2004241779A (ja) * 2003-02-07 2004-08-26 Samsung Electronics Co Ltd 自己整列を利用したＢｉＣＭＯＳの製造方法
KR100520022B1 (ko) * 2000-10-03 2005-10-11 인터내셔널 비지네스 머신즈 코포레이션 ＢｉＣＭＯＳ 주변 회로 및 ＥＳＤ 네트워크를 위한ＳｉＧｅ 트랜지스터, 버랙터 및 ｐ-ｉ-ｎ 속도 포화된안정화 소자
WO2007034936A1 (ja) * 2005-09-26 2007-03-29 Sonac Incorporated プロセッサ、コンパイラ装置及びプログラム

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FR2779572B1 (fr) * 1998-06-05 2003-10-17 St Microelectronics Sa Transistor bipolaire vertical a faible bruit et procede de fabrication correspondant
FR2799048B1 (fr) * 1999-09-23 2003-02-21 St Microelectronics Sa Procede de fabrication d'un transistor bipolaire vertical auto-aligne
IT1316871B1 (it) * 2000-03-31 2003-05-12 St Microelectronics Srl Dispositivo elettronico integrato monoliticamente e relativo processodi fabbricazione
JPWO2002099890A1 (ja) * 2001-06-05 2004-09-24 ソニー株式会社 半導体層及びその形成方法、並びに半導体装置及びその製造方法
US6617619B1 (en) * 2002-02-04 2003-09-09 Newport Fab, Llc Structure for a selective epitaxial HBT emitter
US6597022B1 (en) * 2002-02-04 2003-07-22 Newport Fab, Llc Method for controlling critical dimension in an HBT emitter and related structure
US6943426B2 (en) * 2002-08-14 2005-09-13 Advanced Analogic Technologies, Inc. Complementary analog bipolar transistors with trench-constrained isolation diffusion
US6699765B1 (en) 2002-08-29 2004-03-02 Micrel, Inc. Method of fabricating a bipolar transistor using selective epitaxially grown SiGe base layer
DE10316531A1 (de) * 2003-04-10 2004-07-08 Infineon Technologies Ag Bipolar-Transistor
TWI250640B (en) * 2003-06-19 2006-03-01 Samsung Electronics Co Ltd Bipolar junction transistors and methods of manufacturing the same
KR100498503B1 (ko) * 2003-06-19 2005-07-01 삼성전자주식회사 바이폴라 접합 트랜지스터 및 그 제조 방법
US7038298B2 (en) * 2003-06-24 2006-05-02 International Business Machines Corporation High fT and fmax bipolar transistor and method of making same
US7361183B2 (en) * 2003-10-17 2008-04-22 Ensure Medical, Inc. Locator and delivery device and method of use
US6965133B2 (en) * 2004-03-13 2005-11-15 International Business Machines Corporation Method of base formation in a BiCMOS process
DE102004013478B4 (de) * 2004-03-18 2010-04-01 Austriamicrosystems Ag Verfahren zur Herstellung eines Bipolartransistors mit verbessertem Basisanschluss
US6911681B1 (en) 2004-04-14 2005-06-28 International Business Machines Corporation Method of base formation in a BiCMOS process
WO2005116304A2 (en) * 2004-04-23 2005-12-08 Asm America, Inc. In situ doped epitaxial films
US8926654B2 (en) * 2005-05-04 2015-01-06 Cordis Corporation Locator and closure device and method of use
US8088144B2 (en) * 2005-05-04 2012-01-03 Ensure Medical, Inc. Locator and closure device and method of use
WO2007015194A2 (en) * 2005-08-03 2007-02-08 Nxp B.V. Semiconductor device and method of manufacturing such a device
KR20080089403A (ko) * 2005-12-22 2008-10-06 에이에스엠 아메리카, 인코포레이티드 도핑된 반도체 물질들의 에피택시 증착
US9389839B2 (en) 2008-06-26 2016-07-12 Microsoft Technology Licensing, Llc Safe code for signature updates in an intrusion prevention system
DE102010014761B4 (de) 2010-04-13 2018-09-27 Drägerwerk AG & Co. KGaA Verfahren zur Bestimmung von Vital-Parametern
US9064796B2 (en) 2012-08-13 2015-06-23 Infineon Technologies Ag Semiconductor device and method of making the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04330730A (ja) * 1990-04-13 1992-11-18 Nec Corp 半導体装置及びその製造方法
JPH05235017A (ja) * 1992-02-26 1993-09-10 Nec Corp 半導体装置
JPH07254611A (ja) * 1994-03-15 1995-10-03 Toshiba Corp 半導体装置及びその製造方法
JP2002512452A (ja) * 1998-04-22 2002-04-23 フランス テレコム 縦型バイポーラトランジスタ、特にＳｉＧｅヘテロ接合ベースを有するもの、および前記トランジスタの製造法

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JPS5539677A (en) * 1978-09-14 1980-03-19 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device and its manufacturing
FR2616591B1 (fr) * 1987-06-12 1991-03-01 Thomson Hybrides Microondes Transistor bipolaire a frequence de coupure elevee
US5024957A (en) * 1989-02-13 1991-06-18 International Business Machines Corporation Method of fabricating a bipolar transistor with ultra-thin epitaxial base
US5132765A (en) * 1989-09-11 1992-07-21 Blouse Jeffrey L Narrow base transistor and method of fabricating same
US5187109A (en) * 1991-07-19 1993-02-16 International Business Machines Corporation Lateral bipolar transistor and method of making the same
JP2582519B2 (ja) * 1992-07-13 1997-02-19 インターナショナル・ビジネス・マシーンズ・コーポレイション バイポーラ・トランジスタおよびその製造方法
JP2626535B2 (ja) * 1993-12-28 1997-07-02 日本電気株式会社 半導体装置
US5834800A (en) * 1995-04-10 1998-11-10 Lucent Technologies Inc. Heterojunction bipolar transistor having mono crystalline SiGe intrinsic base and polycrystalline SiGe and Si extrinsic base regions
KR100275544B1 (ko) * 1995-12-20 2001-01-15 이계철 선택적 컬렉터 박막 성장을 이용한 초자기정렬 바이폴러 트랜지스터의 제조방법
FR2756104B1 (fr) * 1996-11-19 1999-01-29 Sgs Thomson Microelectronics Fabrication de circuits integres bipolaires/cmos

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04330730A (ja) * 1990-04-13 1992-11-18 Nec Corp 半導体装置及びその製造方法
JPH05235017A (ja) * 1992-02-26 1993-09-10 Nec Corp 半導体装置
JPH07254611A (ja) * 1994-03-15 1995-10-03 Toshiba Corp 半導体装置及びその製造方法
JP2002512452A (ja) * 1998-04-22 2002-04-23 フランス テレコム 縦型バイポーラトランジスタ、特にＳｉＧｅヘテロ接合ベースを有するもの、および前記トランジスタの製造法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004502300A (ja) * 2000-06-26 2004-01-22 テレフオンアクチーボラゲツト　エル　エム　エリクソン アンチモニ注入による高周波トランジスタ装置及び製造方法
KR100520022B1 (ko) * 2000-10-03 2005-10-11 인터내셔널 비지네스 머신즈 코포레이션 ＢｉＣＭＯＳ 주변 회로 및 ＥＳＤ 네트워크를 위한ＳｉＧｅ 트랜지스터, 버랙터 및 ｐ-ｉ-ｎ 속도 포화된안정화 소자
JP2004111975A (ja) * 2002-09-19 2004-04-08 Samsung Electronics Co Ltd バイポーラトランジスタ及びその製造方法
JP2004241779A (ja) * 2003-02-07 2004-08-26 Samsung Electronics Co Ltd 自己整列を利用したＢｉＣＭＯＳの製造方法
WO2007034936A1 (ja) * 2005-09-26 2007-03-29 Sonac Incorporated プロセッサ、コンパイラ装置及びプログラム

Also Published As

Publication number Publication date
EP0962985A1 (fr) 1999-12-08
FR2779573B1 (fr) 2001-10-26
FR2779573A1 (fr) 1999-12-10
US6723610B2 (en) 2004-04-20
US6316818B1 (en) 2001-11-13
US20020003286A1 (en) 2002-01-10

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