FR2779573B1 - Transistor bipolaire vertical comportant une base extrinseque de rugosite reduite, et procede de fabrication - Google Patents

Transistor bipolaire vertical comportant une base extrinseque de rugosite reduite, et procede de fabrication

Info

Publication number
FR2779573B1
FR2779573B1 FR9807061A FR9807061A FR2779573B1 FR 2779573 B1 FR2779573 B1 FR 2779573B1 FR 9807061 A FR9807061 A FR 9807061A FR 9807061 A FR9807061 A FR 9807061A FR 2779573 B1 FR2779573 B1 FR 2779573B1
Authority
FR
France
Prior art keywords
manufacturing
bipolar transistor
extrinsic base
vertical bipolar
reduced roughness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9807061A
Other languages
English (en)
French (fr)
Other versions
FR2779573A1 (fr
Inventor
Michel Marty
Alain Chantre
Jorge Luis Regolini
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR9807061A priority Critical patent/FR2779573B1/fr
Priority to US09/323,357 priority patent/US6316818B1/en
Priority to EP99401339A priority patent/EP0962985A1/fr
Priority to JP11156070A priority patent/JP2000031156A/ja
Publication of FR2779573A1 publication Critical patent/FR2779573A1/fr
Priority to US09/930,084 priority patent/US6723610B2/en
Application granted granted Critical
Publication of FR2779573B1 publication Critical patent/FR2779573B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H10D10/891—Vertical heterojunction BJTs comprising lattice-mismatched active layers, e.g. SiGe strained-layer transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H10D62/138—Pedestal collectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
FR9807061A 1998-06-05 1998-06-05 Transistor bipolaire vertical comportant une base extrinseque de rugosite reduite, et procede de fabrication Expired - Fee Related FR2779573B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR9807061A FR2779573B1 (fr) 1998-06-05 1998-06-05 Transistor bipolaire vertical comportant une base extrinseque de rugosite reduite, et procede de fabrication
US09/323,357 US6316818B1 (en) 1998-06-05 1999-06-01 Vertical bipolar transistor including an extrinsic base with reduced roughness, and fabrication process
EP99401339A EP0962985A1 (fr) 1998-06-05 1999-06-03 Transistor bipolaire vertical comportant une base extrinsèque de rugosité réduite, et procédé de fabrication
JP11156070A JP2000031156A (ja) 1998-06-05 1999-06-03 粗さを抑えた外因性ベ―スを有するたて形バイポ―ラトランジスタとその製造方法
US09/930,084 US6723610B2 (en) 1998-06-05 2001-08-15 Vertical bipolar transistor including an extrinsic base with reduced roughness, and fabrication process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9807061A FR2779573B1 (fr) 1998-06-05 1998-06-05 Transistor bipolaire vertical comportant une base extrinseque de rugosite reduite, et procede de fabrication

Publications (2)

Publication Number Publication Date
FR2779573A1 FR2779573A1 (fr) 1999-12-10
FR2779573B1 true FR2779573B1 (fr) 2001-10-26

Family

ID=9527039

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9807061A Expired - Fee Related FR2779573B1 (fr) 1998-06-05 1998-06-05 Transistor bipolaire vertical comportant une base extrinseque de rugosite reduite, et procede de fabrication

Country Status (4)

Country Link
US (2) US6316818B1 (enExample)
EP (1) EP0962985A1 (enExample)
JP (1) JP2000031156A (enExample)
FR (1) FR2779573B1 (enExample)

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FR2779572B1 (fr) * 1998-06-05 2003-10-17 St Microelectronics Sa Transistor bipolaire vertical a faible bruit et procede de fabrication correspondant
FR2799048B1 (fr) * 1999-09-23 2003-02-21 St Microelectronics Sa Procede de fabrication d'un transistor bipolaire vertical auto-aligne
IT1316871B1 (it) * 2000-03-31 2003-05-12 St Microelectronics Srl Dispositivo elettronico integrato monoliticamente e relativo processodi fabbricazione
SE518710C2 (sv) * 2000-06-26 2002-11-12 Ericsson Telefon Ab L M Förfarande för att förbättra transistorprestanda samt transistoranordning och integrerad krets
US6552406B1 (en) * 2000-10-03 2003-04-22 International Business Machines Corporation SiGe transistor, varactor and p-i-n velocity saturated ballasting element for BiCMOS peripheral circuits and ESD networks
JPWO2002099890A1 (ja) * 2001-06-05 2004-09-24 ソニー株式会社 半導体層及びその形成方法、並びに半導体装置及びその製造方法
US6617619B1 (en) * 2002-02-04 2003-09-09 Newport Fab, Llc Structure for a selective epitaxial HBT emitter
US6597022B1 (en) * 2002-02-04 2003-07-22 Newport Fab, Llc Method for controlling critical dimension in an HBT emitter and related structure
US6943426B2 (en) * 2002-08-14 2005-09-13 Advanced Analogic Technologies, Inc. Complementary analog bipolar transistors with trench-constrained isolation diffusion
US6699765B1 (en) 2002-08-29 2004-03-02 Micrel, Inc. Method of fabricating a bipolar transistor using selective epitaxially grown SiGe base layer
KR100486265B1 (ko) * 2002-09-19 2005-05-03 삼성전자주식회사 바이폴라 트랜지스터 및 그 제조 방법
KR100486304B1 (ko) * 2003-02-07 2005-04-29 삼성전자주식회사 자기정렬을 이용한 바이씨모스 제조방법
DE10316531A1 (de) * 2003-04-10 2004-07-08 Infineon Technologies Ag Bipolar-Transistor
TWI250640B (en) * 2003-06-19 2006-03-01 Samsung Electronics Co Ltd Bipolar junction transistors and methods of manufacturing the same
KR100498503B1 (ko) * 2003-06-19 2005-07-01 삼성전자주식회사 바이폴라 접합 트랜지스터 및 그 제조 방법
US7038298B2 (en) * 2003-06-24 2006-05-02 International Business Machines Corporation High fT and fmax bipolar transistor and method of making same
US7361183B2 (en) * 2003-10-17 2008-04-22 Ensure Medical, Inc. Locator and delivery device and method of use
US6965133B2 (en) * 2004-03-13 2005-11-15 International Business Machines Corporation Method of base formation in a BiCMOS process
DE102004013478B4 (de) * 2004-03-18 2010-04-01 Austriamicrosystems Ag Verfahren zur Herstellung eines Bipolartransistors mit verbessertem Basisanschluss
US6911681B1 (en) 2004-04-14 2005-06-28 International Business Machines Corporation Method of base formation in a BiCMOS process
WO2005116304A2 (en) * 2004-04-23 2005-12-08 Asm America, Inc. In situ doped epitaxial films
US8926654B2 (en) * 2005-05-04 2015-01-06 Cordis Corporation Locator and closure device and method of use
US8088144B2 (en) * 2005-05-04 2012-01-03 Ensure Medical, Inc. Locator and closure device and method of use
WO2007015194A2 (en) * 2005-08-03 2007-02-08 Nxp B.V. Semiconductor device and method of manufacturing such a device
JP3985829B2 (ja) * 2005-09-26 2007-10-03 ソナック株式会社 プロセッサ
KR20080089403A (ko) * 2005-12-22 2008-10-06 에이에스엠 아메리카, 인코포레이티드 도핑된 반도체 물질들의 에피택시 증착
US9389839B2 (en) 2008-06-26 2016-07-12 Microsoft Technology Licensing, Llc Safe code for signature updates in an intrusion prevention system
DE102010014761B4 (de) 2010-04-13 2018-09-27 Drägerwerk AG & Co. KGaA Verfahren zur Bestimmung von Vital-Parametern
US9064796B2 (en) 2012-08-13 2015-06-23 Infineon Technologies Ag Semiconductor device and method of making the same

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JPS5539677A (en) * 1978-09-14 1980-03-19 Chiyou Lsi Gijutsu Kenkyu Kumiai Semiconductor device and its manufacturing
FR2616591B1 (fr) * 1987-06-12 1991-03-01 Thomson Hybrides Microondes Transistor bipolaire a frequence de coupure elevee
US5024957A (en) * 1989-02-13 1991-06-18 International Business Machines Corporation Method of fabricating a bipolar transistor with ultra-thin epitaxial base
US5132765A (en) * 1989-09-11 1992-07-21 Blouse Jeffrey L Narrow base transistor and method of fabricating same
JP2705344B2 (ja) * 1990-04-13 1998-01-28 日本電気株式会社 半導体装置及びその製造方法
US5187109A (en) * 1991-07-19 1993-02-16 International Business Machines Corporation Lateral bipolar transistor and method of making the same
JP2924417B2 (ja) * 1992-02-26 1999-07-26 日本電気株式会社 半導体装置
JP2582519B2 (ja) * 1992-07-13 1997-02-19 インターナショナル・ビジネス・マシーンズ・コーポレイション バイポーラ・トランジスタおよびその製造方法
JP2626535B2 (ja) * 1993-12-28 1997-07-02 日本電気株式会社 半導体装置
JP3172031B2 (ja) * 1994-03-15 2001-06-04 株式会社東芝 半導体装置の製造方法
US5834800A (en) * 1995-04-10 1998-11-10 Lucent Technologies Inc. Heterojunction bipolar transistor having mono crystalline SiGe intrinsic base and polycrystalline SiGe and Si extrinsic base regions
KR100275544B1 (ko) * 1995-12-20 2001-01-15 이계철 선택적 컬렉터 박막 성장을 이용한 초자기정렬 바이폴러 트랜지스터의 제조방법
FR2756104B1 (fr) * 1996-11-19 1999-01-29 Sgs Thomson Microelectronics Fabrication de circuits integres bipolaires/cmos
FR2778022B1 (fr) * 1998-04-22 2001-07-13 France Telecom Transistor bibolaire vertical, en particulier a base a heterojonction sige, et procede de fabrication

Also Published As

Publication number Publication date
EP0962985A1 (fr) 1999-12-08
FR2779573A1 (fr) 1999-12-10
JP2000031156A (ja) 2000-01-28
US6723610B2 (en) 2004-04-20
US6316818B1 (en) 2001-11-13
US20020003286A1 (en) 2002-01-10

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Effective date: 20100226