DE60045692D1 - Bipolare mosfet-anordnung - Google Patents

Bipolare mosfet-anordnung

Info

Publication number
DE60045692D1
DE60045692D1 DE60045692T DE60045692T DE60045692D1 DE 60045692 D1 DE60045692 D1 DE 60045692D1 DE 60045692 T DE60045692 T DE 60045692T DE 60045692 T DE60045692 T DE 60045692T DE 60045692 D1 DE60045692 D1 DE 60045692D1
Authority
DE
Germany
Prior art keywords
region
conductivity type
well
well region
disposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60045692T
Other languages
English (en)
Inventor
Sankara Narayanan Madathil
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eco Semiconductors Ltd
Original Assignee
Eco Semiconductors Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eco Semiconductors Ltd filed Critical Eco Semiconductors Ltd
Application granted granted Critical
Publication of DE60045692D1 publication Critical patent/DE60045692D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H01L29/745—Gate-turn-off devices with turn-off by field effect
    • H01L29/7455—Gate-turn-off devices with turn-off by field effect produced by an insulated gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE60045692T 1999-09-08 2000-09-07 Bipolare mosfet-anordnung Expired - Lifetime DE60045692D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB9921068.4A GB9921068D0 (en) 1999-09-08 1999-09-08 Bipolar mosfet device
PCT/GB2000/003443 WO2001018876A1 (en) 1999-09-08 2000-09-07 Bipolar mosfet device

Publications (1)

Publication Number Publication Date
DE60045692D1 true DE60045692D1 (de) 2011-04-14

Family

ID=10860461

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60045692T Expired - Lifetime DE60045692D1 (de) 1999-09-08 2000-09-07 Bipolare mosfet-anordnung

Country Status (12)

Country Link
US (1) US6724043B1 (de)
EP (1) EP1269546B1 (de)
JP (1) JP5357370B2 (de)
KR (1) KR100687079B1 (de)
CN (1) CN1227744C (de)
AT (1) ATE500618T1 (de)
AU (1) AU781099B2 (de)
CA (1) CA2381530C (de)
DE (1) DE60045692D1 (de)
DK (1) DK1269546T3 (de)
GB (1) GB9921068D0 (de)
WO (1) WO2001018876A1 (de)

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GB0125710D0 (en) * 2001-10-26 2001-12-19 Koninkl Philips Electronics Nv Transistor device
JP3753692B2 (ja) * 2002-12-20 2006-03-08 ローム株式会社 オープンドレイン用ｍｏｓｆｅｔ及びこれを用いた半導体集積回路装置
KR100830982B1 (ko) 2004-05-12 2008-05-20 도요다 지도샤 가부시끼가이샤 Ｉｇｂｔ
GB0417749D0 (en) * 2004-08-10 2004-09-08 Eco Semiconductors Ltd Improved bipolar MOSFET devices and methods for their use
GB0520909D0 (en) * 2005-10-14 2005-11-23 Eco Semiconductors Ltd Power semiconductor devices
US7582917B2 (en) * 2006-03-10 2009-09-01 Bae Systems Information And Electronic Systems Integration Inc. Monolithically integrated light-activated thyristor and method
JP4087416B2 (ja) * 2006-04-06 2008-05-21 シャープ株式会社 パワーｉｃデバイス及びその製造方法
KR100880231B1 (ko) * 2007-06-20 2009-01-28 주식회사 동부하이텍 반도체 소자 및 그의 제조 방법
US7700977B2 (en) * 2007-06-21 2010-04-20 Intersil Americas Inc. Integrated circuit with a subsurface diode
US8619443B2 (en) 2010-09-29 2013-12-31 The Powerwise Group, Inc. System and method to boost voltage
US8085009B2 (en) 2007-08-13 2011-12-27 The Powerwise Group, Inc. IGBT/FET-based energy savings device for reducing a predetermined amount of voltage using pulse width modulation
US20110182094A1 (en) * 2007-08-13 2011-07-28 The Powerwise Group, Inc. System and method to manage power usage
US8120307B2 (en) 2007-08-24 2012-02-21 The Powerwise Group, Inc. System and method for providing constant loading in AC power applications
US8810190B2 (en) * 2007-09-14 2014-08-19 The Powerwise Group, Inc. Motor controller system and method for maximizing energy savings
US8698447B2 (en) 2007-09-14 2014-04-15 The Powerwise Group, Inc. Energy saving system and method for devices with rotating or reciprocating masses
US9620614B2 (en) * 2007-12-31 2017-04-11 Alpha And Omega Semiconductor Incorporated Sawtooth electric field drift region structure for power semiconductor devices
US8558275B2 (en) * 2007-12-31 2013-10-15 Alpha And Omega Semiconductor Ltd Sawtooth electric field drift region structure for power semiconductor devices
US8004255B2 (en) * 2008-08-07 2011-08-23 The Powerwise Group, Inc. Power supply for IGBT/FET drivers
EA021950B1 (ru) 2009-09-08 2015-10-30 Дзе Пауэрвайз Груп, Инк. Система и способ сбережения энергии для устройств с вращающимися или выполняющими возвратно-поступательное движение массами
US8698446B2 (en) 2009-09-08 2014-04-15 The Powerwise Group, Inc. Method to save energy for devices with rotating or reciprocating masses
US9257525B2 (en) * 2011-05-13 2016-02-09 Intersil Americas LLC Systems and methods for forming isolated devices in a handle wafer
KR101352766B1 (ko) 2011-12-08 2014-01-15 서강대학교산학협력단 엔모스를 삽입한 수평형 절연게이트 바이폴라트랜지스터 소자
CN102956687A (zh) * 2012-10-30 2013-03-06 浙江大学 一种基于双沟道结构的soi-ligbt器件
GB201313126D0 (en) * 2013-07-23 2013-09-04 Eco Semiconductors Ltd MOS-Bipolar Device
US9293559B2 (en) 2013-07-31 2016-03-22 Alpha And Omega Semiconductor Incorporated Dual trench-gate IGBT structure
CN104576365B (zh) * 2013-10-25 2017-11-21 无锡华润上华科技有限公司 cluster‑IGBT的制备方法
US9123770B2 (en) 2013-11-18 2015-09-01 Alpha And Omega Semiconductor Incorporated Charge reservoir IGBT top structure
US20150179794A1 (en) * 2013-12-24 2015-06-25 Hyundai Motor Company Semiconductor device and method of manufacturing the same
CN106711204B (zh) * 2015-11-12 2021-01-22 上海联星电子有限公司 Igbt器件及其制作方法
CN108022972B (zh) * 2016-11-02 2021-07-23 全球能源互联网研究院 一种低通态压降igbt及其控制方法、制造方法
TWI659539B (zh) * 2018-06-28 2019-05-11 立錡科技股份有限公司 高壓元件及其製造方法
CN110504314B (zh) * 2019-08-30 2023-03-03 电子科技大学 一种沟槽型绝缘栅双极晶体管及其制备方法
CN110459597B (zh) * 2019-08-30 2023-02-07 电子科技大学 一种沟槽型绝缘栅双极晶体管及其制备方法
CN111933687B (zh) * 2020-07-07 2023-04-18 电子科技大学 具有高安全工作区的横向功率器件
GB2606383A (en) 2021-05-06 2022-11-09 Eco Semiconductors Ltd A semiconductor device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4121375A1 (de) * 1991-06-28 1993-01-14 Asea Brown Boveri Abschaltbares leistungshalbleiter-bauelement sowie verfahren zu dessen herstellung
JP3163677B2 (ja) * 1991-09-24 2001-05-08 富士電機株式会社 Ｍｉｓｆｅｔ制御型サイリスタを有する半導体装置
JP3352840B2 (ja) * 1994-03-14 2002-12-03 株式会社東芝 逆並列接続型双方向性半導体スイッチ
US5493134A (en) * 1994-11-14 1996-02-20 North Carolina State University Bidirectional AC switching device with MOS-gated turn-on and turn-off control
DE69527721T2 (de) * 1995-05-11 2003-04-24 Fuji Electric Co., Ltd. Emitter-geschalteter thyristor
JP3200328B2 (ja) * 1995-06-27 2001-08-20 株式会社日立製作所 複合半導体装置
KR0175276B1 (ko) * 1996-01-26 1999-02-01 김광호 전력반도체장치 및 그의 제조방법
DE19710487A1 (de) * 1996-03-13 1997-09-18 Toshiba Kawasaki Kk Halbleitervorrichtung
DE19638769C1 (de) * 1996-09-21 1998-03-05 Daimler Benz Ag Emittergesteuerter Thyristor
JP3692684B2 (ja) * 1997-02-17 2005-09-07 株式会社デンソー 絶縁ゲート型電界効果トランジスタ及びその製造方法
JP4761011B2 (ja) * 1999-05-26 2011-08-31 株式会社豊田中央研究所 サイリスタを有する半導体装置及びその製造方法
JP2001177091A (ja) * 1999-12-07 2001-06-29 Analog & Power Electronics Corp ラッチ制御可能な絶縁ゲートバイポーラトランジスタ

Also Published As

Publication number Publication date
AU781099B2 (en) 2005-05-05
AU7024400A (en) 2001-04-10
CN1373905A (zh) 2002-10-09
CA2381530A1 (en) 2001-03-15
KR20020032567A (ko) 2002-05-03
CN1227744C (zh) 2005-11-16
GB9921068D0 (en) 1999-11-10
WO2001018876A1 (en) 2001-03-15
ATE500618T1 (de) 2011-03-15
US6724043B1 (en) 2004-04-20
CA2381530C (en) 2012-07-10
KR100687079B1 (ko) 2007-02-27
JP2003509849A (ja) 2003-03-11
JP5357370B2 (ja) 2013-12-04
EP1269546B1 (de) 2011-03-02
EP1269546A1 (de) 2003-01-02
DK1269546T3 (da) 2011-06-27

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