ATE447768T1 - Bipolartransistoren mit grabenstruktur - Google Patents

Bipolartransistoren mit grabenstruktur

Info

Publication number
ATE447768T1
ATE447768T1 AT02758689T AT02758689T ATE447768T1 AT E447768 T1 ATE447768 T1 AT E447768T1 AT 02758689 T AT02758689 T AT 02758689T AT 02758689 T AT02758689 T AT 02758689T AT E447768 T1 ATE447768 T1 AT E447768T1
Authority
AT
Austria
Prior art keywords
gate
drift region
bipolar transistors
trench structure
region
Prior art date
Application number
AT02758689T
Other languages
English (en)
Inventor
Raymond Hueting
Jan Slotboom
Petrus Magnee
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE447768T1 publication Critical patent/ATE447768T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
AT02758689T 2001-08-07 2002-08-05 Bipolartransistoren mit grabenstruktur ATE447768T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0119215.2A GB0119215D0 (en) 2001-08-07 2001-08-07 Trench bipolar transistor
PCT/IB2002/003289 WO2003015178A1 (en) 2001-08-07 2002-08-05 Trench bipolar transistor

Publications (1)

Publication Number Publication Date
ATE447768T1 true ATE447768T1 (de) 2009-11-15

Family

ID=9919936

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02758689T ATE447768T1 (de) 2001-08-07 2002-08-05 Bipolartransistoren mit grabenstruktur

Country Status (7)

Country Link
US (1) US6777780B2 (de)
EP (1) EP1417716B1 (de)
JP (1) JP4053497B2 (de)
AT (1) ATE447768T1 (de)
DE (1) DE60234259D1 (de)
GB (1) GB0119215D0 (de)
WO (1) WO2003015178A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3653087B2 (ja) * 2003-07-04 2005-05-25 三菱重工業株式会社 Ｄｃ／ｄｃコンバータ
WO2006011073A1 (en) * 2004-07-20 2006-02-02 Koninklijke Philips Electronics N.V. Semiconductor device and method of manufacturing the same
US20060049464A1 (en) 2004-09-03 2006-03-09 Rao G R Mohan Semiconductor devices with graded dopant regions
US7821033B2 (en) * 2007-02-15 2010-10-26 Infineon Technologies Austria Ag Semiconductor component comprising a drift zone and a drift control zone
US8739368B2 (en) * 2007-11-16 2014-06-03 H. Stetser Murphy, Jr. Eyeglass holder
US9944217B2 (en) 2013-02-11 2018-04-17 Ferno-Washington, Inc. Equipment mounting system
US20140347135A1 (en) 2013-05-23 2014-11-27 Nxp B.V. Bipolar transistors with control of electric field

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2543739B1 (fr) 1983-03-30 1986-04-18 Radiotechnique Compelec Procede de realisation d'un transistor bipolaire haute tension
US5539238A (en) 1992-09-02 1996-07-23 Texas Instruments Incorporated Area efficient high voltage Mosfets with vertical resurf drift regions
US5326711A (en) 1993-01-04 1994-07-05 Texas Instruments Incorporated High performance high voltage vertical transistor and method of fabrication
JPH0878668A (ja) 1994-08-31 1996-03-22 Toshiba Corp 電力用半導体装置
US5828101A (en) * 1995-03-30 1998-10-27 Kabushiki Kaisha Toshiba Three-terminal semiconductor device and related semiconductor devices
GB2309336B (en) * 1996-01-22 2001-05-23 Fuji Electric Co Ltd Semiconductor device
DE19848828C2 (de) 1998-10-22 2001-09-13 Infineon Technologies Ag Halbleiterbauelement mit kleiner Durchlaßspannung und hoher Sperrfähigkeit
EP1065728B1 (de) * 1999-06-22 2009-04-22 Panasonic Corporation Heteroübergangsbipolartransistoren und entsprechende Herstellungsverfahren
JP3971062B2 (ja) 1999-07-29 2007-09-05 株式会社東芝 高耐圧半導体装置
GB0003184D0 (en) 2000-02-12 2000-04-05 Koninkl Philips Electronics Nv A semiconductor device and a method of fabricating material for a semiconductor device
GB0003186D0 (en) 2000-02-12 2000-04-05 Koninkl Philips Electronics Nv A semiconductor device

Also Published As

Publication number Publication date
JP4053497B2 (ja) 2008-02-27
EP1417716B1 (de) 2009-11-04
JP2004538647A (ja) 2004-12-24
DE60234259D1 (de) 2009-12-17
US6777780B2 (en) 2004-08-17
EP1417716A1 (de) 2004-05-12
WO2003015178A1 (en) 2003-02-20
US20030030488A1 (en) 2003-02-13
GB0119215D0 (en) 2001-09-26

Similar Documents

Publication Publication Date Title
SE9602881L (sv) Halvledarkomponent för högspänning
CA2381530A1 (en) Bipolar mosfet device
DE69821105D1 (de) Bipolar mos-leistungstransistor ohne latch-up
ATE356439T1 (de) Graben-gate-feldeffekttransistoren und ihre herstellung
ATE515802T1 (de) Lateraler leistungs-mosfet
WO2001059848A3 (en) Mos-gated semiconductor device having alternating conductivity type semiconductor regions and methods of making the same
EP2367205A3 (de) Vertikaler Sperrschicht-Feldeffekttransistoren und Verfahren zu deren Herstellung
ATE457084T1 (de) Feldeffekt-transistoranordnung mit einer grabenförmigen gate-elektrode und einer zusätzlichen hochdotierten schicht im bodygebiet
DE60028850D1 (de) Bipolartransistor mit isolierter Gate-Elektrode
JP2003218348A (ja) 二重拡散型ｍｏｓｆｅｔおよびこれを用いた半導体装置
KR970013429A (ko) 높은 브리크다운 전압을 갖는 탄화실리콘 트랜지스터
WO2005053031A3 (en) Trench insulated gate field effect transistor
TW200711057A (en) SOI device with more immunity from substrate voltage
WO2001006568A3 (en) Trench-gate field-effect transistors and their manufacture
US20130056824A1 (en) Semiconductor device and manufacturing method for the same
KR100553650B1 (ko) 폭이 넓은 밴드갭 반도체 내의 전력 소자
CN108365007A (zh) 绝缘栅双极型晶体管
SE9900358D0 (sv) A lateral field effect transistor of SiC, a method for production thereof and a use of such a transistor
JPH08213598A (ja) 電界効果により制御可能の半導体デバイス
ATE447768T1 (de) Bipolartransistoren mit grabenstruktur
EP2058854A2 (de) Halbleiterbauelement
EP0802567A3 (de) Halbleiteranordnung und Verfahren zu ihrer Herstellung
DE50014606D1 (de) Igbt mit pn-isolation
US7095084B2 (en) Emitter switching configuration and corresponding integrated structure
HK1042378B (zh) 碳化硅橫向場效應晶體管和製造方法及其使用

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties