JP2000031155A - 低雑音たて形バイポ―ラトランジスタとその製造方法 - Google Patents

低雑音たて形バイポ―ラトランジスタとその製造方法

Info

Publication number
JP2000031155A
JP2000031155A JP11156049A JP15604999A JP2000031155A JP 2000031155 A JP2000031155 A JP 2000031155A JP 11156049 A JP11156049 A JP 11156049A JP 15604999 A JP15604999 A JP 15604999A JP 2000031155 A JP2000031155 A JP 2000031155A
Authority
JP
Japan
Prior art keywords
layer
emitter
silicon
window
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11156049A
Other languages
English (en)
Japanese (ja)
Other versions
JP2000031155A5 (enExample
Inventor
Alain Chantre
アラン・シャントル
Michel Marty
ミシェル・マルティ
Didier Dutartre
ディディエル・デゥタルトル
Augustin Monroy
オグスティン・モンロイ
Michel Laurens
ミシェル・ローレンス
Francois Guette
フランソワ・ゲート
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
STMicroelectronics lnc USA
Original Assignee
Commissariat a lEnergie Atomique CEA
STMicroelectronics SA
STMicroelectronics lnc USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, STMicroelectronics SA, STMicroelectronics lnc USA filed Critical Commissariat a lEnergie Atomique CEA
Publication of JP2000031155A publication Critical patent/JP2000031155A/ja
Publication of JP2000031155A5 publication Critical patent/JP2000031155A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H10D10/891—Vertical heterojunction BJTs comprising lattice-mismatched active layers, e.g. SiGe strained-layer transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H10D62/138—Pedestal collectors

Landscapes

  • Bipolar Transistors (AREA)
JP11156049A 1998-06-05 1999-06-03 低雑音たて形バイポ―ラトランジスタとその製造方法 Pending JP2000031155A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9807059 1998-06-05
FR9807059A FR2779572B1 (fr) 1998-06-05 1998-06-05 Transistor bipolaire vertical a faible bruit et procede de fabrication correspondant

Publications (2)

Publication Number Publication Date
JP2000031155A true JP2000031155A (ja) 2000-01-28
JP2000031155A5 JP2000031155A5 (enExample) 2006-07-06

Family

ID=9527036

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11156049A Pending JP2000031155A (ja) 1998-06-05 1999-06-03 低雑音たて形バイポ―ラトランジスタとその製造方法

Country Status (4)

Country Link
US (1) US6177717B1 (enExample)
EP (1) EP0962966A1 (enExample)
JP (1) JP2000031155A (enExample)
FR (1) FR2779572B1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006511084A (ja) * 2002-12-20 2006-03-30 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 半導体装置の製造方法
US7719031B2 (en) 2003-07-11 2010-05-18 Panasonic Corporation Heterojunction biploar transistor and method for manufacturing same

Families Citing this family (27)

* Cited by examiner, † Cited by third party
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FR2801420B1 (fr) 1999-11-23 2002-04-12 St Microelectronics Sa Transistor bipolaire vertical a faible bruit basse frequence et gain en courant eleve, et procede de fabrication correspondant
FR2804247B1 (fr) 2000-01-21 2002-04-12 St Microelectronics Sa Procede de realisation d'un transistor bipolaire a emetteur et base extrinseque auto-alignes
FR2822292B1 (fr) * 2001-03-14 2003-07-18 St Microelectronics Sa Procede de fabrication d'un transistor bipolaire de type double polysilicium a base a heterojonction et transistor correspondant
SE0103036D0 (sv) * 2001-05-04 2001-09-13 Ericsson Telefon Ab L M Semiconductor process and integrated circuit
US6534802B1 (en) * 2001-05-07 2003-03-18 Newport Fab, Llc Method for reducing base to collector capacitance and related structure
US6444535B1 (en) * 2001-05-09 2002-09-03 Newport Fab, Llc Method to reduce emitter to base capacitance and related structure
US20020197807A1 (en) * 2001-06-20 2002-12-26 International Business Machines Corporation Non-self-aligned SiGe heterojunction bipolar transistor
US6794237B2 (en) * 2001-12-27 2004-09-21 Texas Instruments Incorporated Lateral heterojunction bipolar transistor
US6586297B1 (en) * 2002-06-01 2003-07-01 Newport Fab, Llc Method for integrating a metastable base into a high-performance HBT and related structure
JP2004111852A (ja) * 2002-09-20 2004-04-08 Fujitsu Ltd 半導体装置及びその製造方法
DE10317098A1 (de) 2003-04-14 2004-07-22 Infineon Technologies Ag Verfahren zur Herstellung eines Bipolartransistors
KR100498503B1 (ko) * 2003-06-19 2005-07-01 삼성전자주식회사 바이폴라 접합 트랜지스터 및 그 제조 방법
TWI250640B (en) * 2003-06-19 2006-03-01 Samsung Electronics Co Ltd Bipolar junction transistors and methods of manufacturing the same
US6967167B2 (en) * 2003-09-30 2005-11-22 International Business Machines Corporation Silicon dioxide removing method
US6979884B2 (en) * 2003-12-04 2005-12-27 International Business Machines Corporation Bipolar transistor having self-aligned silicide and a self-aligned emitter contact border
FR2868203B1 (fr) * 2004-03-29 2006-06-09 St Microelectronics Sa Procede de fabrication d'un transistor bipolaire a base extrinseque monocristalline
DE102004053394B4 (de) * 2004-11-05 2010-08-19 Atmel Automotive Gmbh Halbleiteranordnung und Verfahren zur Herstellung einer Halbleiteranordnung
DE102004053393B4 (de) * 2004-11-05 2007-01-11 Atmel Germany Gmbh Verfahren zur Herstellung einer vertikal integrierten Kaskodenstruktur und vertikal integrierte Kaskodenstruktur
US7682940B2 (en) * 2004-12-01 2010-03-23 Applied Materials, Inc. Use of Cl2 and/or HCl during silicon epitaxial film formation
DE102005021450B4 (de) * 2005-05-10 2009-04-23 Atmel Germany Gmbh Integrierter Schaltkreis und Verfahren zur Herstellung eines integrierten Schaltkreises und dessen Verwendung
US7342293B2 (en) * 2005-12-05 2008-03-11 International Business Machines Corporation Bipolar junction transistors (BJTS) with second shallow trench isolation (STI) regions, and methods for forming same
TWI379347B (en) * 2006-07-31 2012-12-11 Applied Materials Inc Methods of forming carbon-containing silicon epitaxial layers
KR101369355B1 (ko) 2006-07-31 2014-03-04 어플라이드 머티어리얼스, 인코포레이티드 에피택셜 층 형성 동안에 형태를 제어하는 방법
US7521772B2 (en) * 2006-11-08 2009-04-21 International Business Machines Corporation Monocrystalline extrinsic base and emitter heterojunction bipolar transistor and related methods
US7723823B2 (en) * 2008-07-24 2010-05-25 Freescale Semiconductor, Inc. Buried asymmetric junction ESD protection device
CN109887996B (zh) * 2019-01-31 2022-03-08 上海华虹宏力半导体制造有限公司 自对准锗硅hbt器件的制造方法
US11569357B2 (en) * 2021-05-13 2023-01-31 Nxp Usa, Inc. Semiconductor device and method of making a semiconductor device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02150034A (ja) * 1988-11-30 1990-06-08 Fujitsu Ltd 半導体装置およびその製造方法
JPH04102334A (ja) * 1990-08-22 1992-04-03 Nec Corp 半導体装置の製造方法
JPH04330730A (ja) * 1990-04-13 1992-11-18 Nec Corp 半導体装置及びその製造方法
JPH07254611A (ja) * 1994-03-15 1995-10-03 Toshiba Corp 半導体装置及びその製造方法
JPH09186172A (ja) * 1995-12-12 1997-07-15 Lucent Technol Inc 集積電子装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5296391A (en) * 1982-03-24 1994-03-22 Nec Corporation Method of manufacturing a bipolar transistor having thin base region
US5266504A (en) * 1992-03-26 1993-11-30 International Business Machines Corporation Low temperature emitter process for high performance bipolar devices
JP2551353B2 (ja) * 1993-10-07 1996-11-06 日本電気株式会社 半導体装置及びその製造方法
JP2679639B2 (ja) * 1994-09-12 1997-11-19 日本電気株式会社 半導体装置及びその製造方法
KR100275544B1 (ko) * 1995-12-20 2001-01-15 이계철 선택적 컬렉터 박막 성장을 이용한 초자기정렬 바이폴러 트랜지스터의 제조방법
EP0818829A1 (en) * 1996-07-12 1998-01-14 Hitachi, Ltd. Bipolar transistor and method of fabricating it
FR2779573B1 (fr) * 1998-06-05 2001-10-26 St Microelectronics Sa Transistor bipolaire vertical comportant une base extrinseque de rugosite reduite, et procede de fabrication
FR2779571B1 (fr) * 1998-06-05 2003-01-24 St Microelectronics Sa Procede de dopage selectif du collecteur intrinseque d'un transistor bipolaire vertical a base epitaxiee

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02150034A (ja) * 1988-11-30 1990-06-08 Fujitsu Ltd 半導体装置およびその製造方法
JPH04330730A (ja) * 1990-04-13 1992-11-18 Nec Corp 半導体装置及びその製造方法
JPH04102334A (ja) * 1990-08-22 1992-04-03 Nec Corp 半導体装置の製造方法
JPH07254611A (ja) * 1994-03-15 1995-10-03 Toshiba Corp 半導体装置及びその製造方法
JPH09186172A (ja) * 1995-12-12 1997-07-15 Lucent Technol Inc 集積電子装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006511084A (ja) * 2002-12-20 2006-03-30 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 半導体装置の製造方法
US7719031B2 (en) 2003-07-11 2010-05-18 Panasonic Corporation Heterojunction biploar transistor and method for manufacturing same

Also Published As

Publication number Publication date
EP0962966A1 (fr) 1999-12-08
FR2779572A1 (fr) 1999-12-10
FR2779572B1 (fr) 2003-10-17
US6177717B1 (en) 2001-01-23

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