IT8120225A0 - Mosfet di potenza dotato di una regione anodica. - Google Patents

Mosfet di potenza dotato di una regione anodica.

Info

Publication number
IT8120225A0
IT8120225A0 IT8120225A IT2022581A IT8120225A0 IT 8120225 A0 IT8120225 A0 IT 8120225A0 IT 8120225 A IT8120225 A IT 8120225A IT 2022581 A IT2022581 A IT 2022581A IT 8120225 A0 IT8120225 A0 IT 8120225A0
Authority
IT
Italy
Prior art keywords
power mosfet
anodic region
mosfet equipped
anodic
region
Prior art date
Application number
IT8120225A
Other languages
English (en)
Other versions
IT1194027B (it
Inventor
Hans Werner Becke
Carl Franklin Wheatley Jr
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=22460824&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=IT8120225(A0) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Rca Corp filed Critical Rca Corp
Publication of IT8120225A0 publication Critical patent/IT8120225A0/it
Application granted granted Critical
Publication of IT1194027B publication Critical patent/IT1194027B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thyristors (AREA)
IT20225/81A 1980-03-25 1981-03-09 Mosfet di potenza dotato di una regione anodica IT1194027B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/133,902 US4364073A (en) 1980-03-25 1980-03-25 Power MOSFET with an anode region

Publications (2)

Publication Number Publication Date
IT8120225A0 true IT8120225A0 (it) 1981-03-09
IT1194027B IT1194027B (it) 1988-08-31

Family

ID=22460824

Family Applications (1)

Application Number Title Priority Date Filing Date
IT20225/81A IT1194027B (it) 1980-03-25 1981-03-09 Mosfet di potenza dotato di una regione anodica

Country Status (9)

Country Link
US (1) US4364073A (it)
JP (1) JPS56150870A (it)
DE (1) DE3110230C3 (it)
FR (1) FR2479567B1 (it)
GB (1) GB2072422B (it)
IT (1) IT1194027B (it)
PL (1) PL137347B1 (it)
SE (1) SE456292B (it)
YU (1) YU43009B (it)

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DE3200660A1 (de) * 1982-01-12 1983-07-21 Siemens AG, 1000 Berlin und 8000 München Mis-feldeffekttransistor mit ladungstraegerinjektion
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US4567641A (en) * 1982-04-12 1986-02-04 General Electric Company Method of fabricating semiconductor devices having a diffused region of reduced length
US4574209A (en) * 1982-06-21 1986-03-04 Eaton Corporation Split gate EFET and circuitry
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US4553151A (en) * 1982-09-23 1985-11-12 Eaton Corporation Bidirectional power FET with field shaping
US4577208A (en) * 1982-09-23 1986-03-18 Eaton Corporation Bidirectional power FET with integral avalanche protection
US4541001A (en) * 1982-09-23 1985-09-10 Eaton Corporation Bidirectional power FET with substrate-referenced shield
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Also Published As

Publication number Publication date
PL230318A1 (it) 1982-01-04
SE8101263L (sv) 1981-09-26
YU77481A (en) 1983-06-30
JPS6150397B2 (it) 1986-11-04
JPS56150870A (en) 1981-11-21
FR2479567B1 (fr) 1986-04-18
IT1194027B (it) 1988-08-31
PL137347B1 (en) 1986-05-31
DE3110230C2 (it) 1992-12-24
GB2072422B (en) 1984-05-16
SE456292B (sv) 1988-09-19
GB2072422A (en) 1981-09-30
DE3110230C3 (de) 1998-07-09
YU43009B (en) 1989-02-28
US4364073A (en) 1982-12-14
DE3110230A1 (de) 1982-01-14
FR2479567A1 (fr) 1981-10-02

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