IT1296864B1 - Dospositivo di memoria a semiconduttore non volatile avente un elettrodo di porta fluttuante - Google Patents

Dospositivo di memoria a semiconduttore non volatile avente un elettrodo di porta fluttuante

Info

Publication number
IT1296864B1
IT1296864B1 IT97MI002762A ITMI972762A IT1296864B1 IT 1296864 B1 IT1296864 B1 IT 1296864B1 IT 97MI002762 A IT97MI002762 A IT 97MI002762A IT MI972762 A ITMI972762 A IT MI972762A IT 1296864 B1 IT1296864 B1 IT 1296864B1
Authority
IT
Italy
Prior art keywords
doser
semiconductor memory
volatile semiconductor
floating door
door electrode
Prior art date
Application number
IT97MI002762A
Other languages
English (en)
Inventor
Takahiro Ohnakado
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of ITMI972762A1 publication Critical patent/ITMI972762A1/it
Application granted granted Critical
Publication of IT1296864B1 publication Critical patent/IT1296864B1/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
IT97MI002762A 1997-03-10 1997-12-12 Dospositivo di memoria a semiconduttore non volatile avente un elettrodo di porta fluttuante IT1296864B1 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9054906A JPH10256400A (ja) 1997-03-10 1997-03-10 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
ITMI972762A1 ITMI972762A1 (it) 1999-06-12
IT1296864B1 true IT1296864B1 (it) 1999-08-02

Family

ID=12983656

Family Applications (1)

Application Number Title Priority Date Filing Date
IT97MI002762A IT1296864B1 (it) 1997-03-10 1997-12-12 Dospositivo di memoria a semiconduttore non volatile avente un elettrodo di porta fluttuante

Country Status (6)

Country Link
US (1) US5901084A (it)
JP (1) JPH10256400A (it)
KR (1) KR19980079362A (it)
DE (1) DE19752434C2 (it)
IT (1) IT1296864B1 (it)
TW (1) TW338193B (it)

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US6893921B2 (en) * 2003-04-10 2005-05-17 Mosel Vitelic, Inc. Nonvolatile memories with a floating gate having an upward protrusion
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US6846712B2 (en) * 2003-05-16 2005-01-25 Promos Technologies Inc. Fabrication of gate dielectric in nonvolatile memories having select, floating and control gates
US7214585B2 (en) * 2003-05-16 2007-05-08 Promos Technologies Inc. Methods of fabricating integrated circuits with openings that allow electrical contact to conductive features having self-aligned edges
US6902974B2 (en) * 2003-05-16 2005-06-07 Promos Technologies Inc. Fabrication of conductive gates for nonvolatile memories from layers with protruding portions
US7101757B2 (en) * 2003-07-30 2006-09-05 Promos Technologies, Inc. Nonvolatile memory cells with buried channel transistors
US7052947B2 (en) * 2003-07-30 2006-05-30 Promos Technologies Inc. Fabrication of gate dielectric in nonvolatile memories in which a memory cell has multiple floating gates
US7169667B2 (en) * 2003-07-30 2007-01-30 Promos Technologies Inc. Nonvolatile memory cell with multiple floating gates formed after the select gate
US6885044B2 (en) 2003-07-30 2005-04-26 Promos Technologies, Inc. Arrays of nonvolatile memory cells wherein each cell has two conductive floating gates
US7060565B2 (en) * 2003-07-30 2006-06-13 Promos Technologies Inc. Fabrication of dielectric for a nonvolatile memory cell having multiple floating gates
US6951782B2 (en) * 2003-07-30 2005-10-04 Promos Technologies, Inc. Nonvolatile memory cell with multiple floating gates formed after the select gate and having upward protrusions
TWI220252B (en) * 2003-08-06 2004-08-11 Ememory Technology Inc Method for programming, erasing and reading a flash memory cell
US7145370B2 (en) * 2003-09-05 2006-12-05 Impinj, Inc. High-voltage switches in single-well CMOS processes
US7088623B2 (en) * 2003-10-16 2006-08-08 United Microelectronics Corp. Non-volatile memory technology suitable for flash and byte operation application
US7238575B2 (en) * 2004-03-10 2007-07-03 Promos Technologies, Inc. Fabrication of conductive lines interconnecting conductive gates in nonvolatile memories, and non-volatile memory structures
US7148104B2 (en) * 2004-03-10 2006-12-12 Promos Technologies Inc. Fabrication of conductive lines interconnecting first conductive gates in nonvolatile memories having second conductive gates provided by conductive gate lines, wherein the adjacent conductive gate lines for the adjacent columns are spaced from each other, and non-volatile memory structures
US7177182B2 (en) * 2004-03-30 2007-02-13 Impinj, Inc. Rewriteable electronic fuses
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US7242614B2 (en) * 2004-03-30 2007-07-10 Impinj, Inc. Rewriteable electronic fuses
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US8111558B2 (en) * 2004-05-05 2012-02-07 Synopsys, Inc. pFET nonvolatile memory
US8896048B1 (en) * 2004-06-04 2014-11-25 Spansion Llc Apparatus and method for source side implantation after spacer formation to reduce short channel effects in metal oxide semiconductor field effect transistors
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US8482052B2 (en) * 2005-01-03 2013-07-09 Macronix International Co., Ltd. Silicon on insulator and thin film transistor bandgap engineered split gate memory
US7257033B2 (en) * 2005-03-17 2007-08-14 Impinj, Inc. Inverter non-volatile memory cell and array system
US7679957B2 (en) * 2005-03-31 2010-03-16 Virage Logic Corporation Redundant non-volatile memory cell
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US8122307B1 (en) 2006-08-15 2012-02-21 Synopsys, Inc. One time programmable memory test structures and methods
JP2008270364A (ja) * 2007-04-17 2008-11-06 Toyota Motor Corp 不揮発性半導体記憶素子
US7719896B1 (en) 2007-04-24 2010-05-18 Virage Logic Corporation Configurable single bit/dual bits memory
EP2068351A1 (en) * 2007-12-03 2009-06-10 INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM vzw (IMEC) Floating gate non-volatile memory device and method for manufacturing same
US7894261B1 (en) 2008-05-22 2011-02-22 Synopsys, Inc. PFET nonvolatile memory
US8125835B2 (en) * 2008-09-22 2012-02-28 Cypress Semiconductor Corporation Memory architecture having two independently controlled voltage pumps
CN102376715B (zh) * 2010-08-11 2014-03-12 中国科学院微电子研究所 一种无电容型动态随机访问存储器结构及其制备方法
US20120043600A1 (en) * 2010-08-18 2012-02-23 Van Der Vegt Henderikus Albert Floating-Gate Device and Method Therefor
CN102468342A (zh) * 2010-11-10 2012-05-23 中国科学院微电子研究所 一种半导体存储单元、器件及其制备方法
JP2014179361A (ja) * 2013-03-13 2014-09-25 Toshiba Corp 不揮発性半導体記憶装置およびその製造方法
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Also Published As

Publication number Publication date
DE19752434C2 (de) 2000-10-19
US5901084A (en) 1999-05-04
DE19752434A1 (de) 1998-09-24
JPH10256400A (ja) 1998-09-25
KR19980079362A (ko) 1998-11-25
TW338193B (en) 1998-08-11
ITMI972762A1 (it) 1999-06-12

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