IT1255932B - Circuito di ridondanza di riga per un dispositivo di memoria a semiconduttore. - Google Patents

Circuito di ridondanza di riga per un dispositivo di memoria a semiconduttore.

Info

Publication number
IT1255932B
IT1255932B ITMI922473A ITMI922473A IT1255932B IT 1255932 B IT1255932 B IT 1255932B IT MI922473 A ITMI922473 A IT MI922473A IT MI922473 A ITMI922473 A IT MI922473A IT 1255932 B IT1255932 B IT 1255932B
Authority
IT
Italy
Prior art keywords
memory device
semiconductor memory
redundancy circuit
output
address bits
Prior art date
Application number
ITMI922473A
Other languages
English (en)
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of ITMI922473A0 publication Critical patent/ITMI922473A0/it
Publication of ITMI922473A1 publication Critical patent/ITMI922473A1/it
Application granted granted Critical
Publication of IT1255932B publication Critical patent/IT1255932B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

Circuito di ridondanza di riga per riparare una cella difettosa di una matrice di celle di memoria in un dispositivo di memoria a semiconduttore comprendente un selettore 300 di indirizzi per ricevere due o più bit di indirizzo designanti la cella difettosa per fornire selettivamente in uscita uno dei due o più bit di indirizzo, un blocco fusibili 100 per memorizzare l'informazione dei bit di indirizzo rimanenti tranne per il bit selezionato fornito in uscita dal selettore di indirizzi, e almeno un decodificatore ridondante 200, 200A per decodificare i segnali di uscita del selettore di indirizzi e blocco fusibili, così da massimizzare l'efficienza di ridondanza di riga.
ITMI922473A 1992-03-09 1992-10-28 Circuito di ridondanza di riga per un dispositivo di memoria a semiconduttore. IT1255932B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920003841A KR940007241B1 (ko) 1992-03-09 1992-03-09 반도체 메모리 장치의 로우 리던던시장치

Publications (3)

Publication Number Publication Date
ITMI922473A0 ITMI922473A0 (it) 1992-10-28
ITMI922473A1 ITMI922473A1 (it) 1994-04-28
IT1255932B true IT1255932B (it) 1995-11-17

Family

ID=19330147

Family Applications (1)

Application Number Title Priority Date Filing Date
ITMI922473A IT1255932B (it) 1992-03-09 1992-10-28 Circuito di ridondanza di riga per un dispositivo di memoria a semiconduttore.

Country Status (8)

Country Link
US (1) US5337277A (it)
JP (1) JPH05282893A (it)
KR (1) KR940007241B1 (it)
CN (1) CN1032282C (it)
DE (1) DE4234155C2 (it)
FR (1) FR2688328B1 (it)
GB (1) GB2265031B (it)
IT (1) IT1255932B (it)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0793172A (ja) * 1993-09-24 1995-04-07 Nec Corp 冗長ブロック切り替え回路
EP0668563B1 (en) * 1994-02-17 1998-07-08 STMicroelectronics S.r.l. Method for programming redundancy registers in a row redundancy integrated circuitry for a semiconductor memory device
KR0182868B1 (ko) * 1995-09-27 1999-04-15 김주용 플래쉬 메모리셀의 리페어 회로 및 리페어 방법
KR100195274B1 (ko) * 1995-12-28 1999-06-15 윤종용 리던던시 퓨즈 상자 및 그 배치 방법
US5764878A (en) * 1996-02-07 1998-06-09 Lsi Logic Corporation Built-in self repair system for embedded memories
JPH09306198A (ja) * 1996-02-07 1997-11-28 Lsi Logic Corp 冗長列及び入／出力線を備えたａｓｉｃメモリを修復するための方法
JPH09282900A (ja) * 1996-04-11 1997-10-31 Oki Electric Ind Co Ltd メモリモジュール
US5677917A (en) * 1996-04-29 1997-10-14 Motorola, Inc. Integrated circuit memory using fusible links in a scan chain
US5737511A (en) * 1996-06-13 1998-04-07 United Microelectronics Corporation Method of reducing chip size by modifying main wordline repair structure
US6332183B1 (en) 1998-03-05 2001-12-18 Micron Technology, Inc. Method for recovery of useful areas of partially defective synchronous memory components
US6314527B1 (en) 1998-03-05 2001-11-06 Micron Technology, Inc. Recovery of useful areas of partially defective synchronous memory components
US6381707B1 (en) 1998-04-28 2002-04-30 Micron Technology, Inc. System for decoding addresses for a defective memory array
US6381708B1 (en) 1998-04-28 2002-04-30 Micron Technology, Inc. Method for decoding addresses for a defective memory array
US6199177B1 (en) * 1998-08-28 2001-03-06 Micron Technology, Inc. Device and method for repairing a semiconductor memory
US6496876B1 (en) 1998-12-21 2002-12-17 Micron Technology, Inc. System and method for storing a tag to identify a functional storage location in a memory device
US6578157B1 (en) 2000-03-06 2003-06-10 Micron Technology, Inc. Method and apparatus for recovery of useful areas of partially defective direct rambus rimm components
US7269765B1 (en) * 2000-04-13 2007-09-11 Micron Technology, Inc. Method and apparatus for storing failing part locations in a module
JP2002216493A (ja) * 2001-01-23 2002-08-02 Mitsubishi Electric Corp 救済修正回路および半導体記憶装置
KR100400307B1 (ko) 2001-05-09 2003-10-01 주식회사 하이닉스반도체 로오 리페어회로를 가진 반도체 메모리 장치
US7219271B2 (en) 2001-12-14 2007-05-15 Sandisk 3D Llc Memory device and method for redundancy/self-repair
US7093156B1 (en) * 2002-05-13 2006-08-15 Virage Logic Corp. Embedded test and repair scheme and interface for compiling a memory assembly with redundancy implementation
US6982911B2 (en) * 2004-03-18 2006-01-03 Infineon Technologies Ag Memory device with common row interface
US7046560B2 (en) * 2004-09-02 2006-05-16 Micron Technology, Inc. Reduction of fusible links and associated circuitry on memory dies
US7277336B2 (en) 2004-12-28 2007-10-02 Sandisk 3D Llc Method and apparatus for improving yield in semiconductor devices by guaranteeing health of redundancy information
US7212454B2 (en) * 2005-06-22 2007-05-01 Sandisk 3D Llc Method and apparatus for programming a memory array
KR100809683B1 (ko) * 2005-07-14 2008-03-07 삼성전자주식회사 멀티 로우 어드레스 테스트 시간을 감소시킬 수 있는반도체 메모리 장치 및 멀티 로우 어드레스 테스트 방법.
KR100892639B1 (ko) * 2007-05-10 2009-04-09 주식회사 하이닉스반도체 리던던시 회로
US7958390B2 (en) 2007-05-15 2011-06-07 Sandisk Corporation Memory device for repairing a neighborhood of rows in a memory array using a patch table
US7966518B2 (en) 2007-05-15 2011-06-21 Sandisk Corporation Method for repairing a neighborhood of rows in a memory array using a patch table
CN101377959B (zh) * 2007-08-30 2012-01-04 晶豪科技股份有限公司 冗余位线修复的选择方法及其装置
US9455703B2 (en) * 2013-11-15 2016-09-27 Eaglepicher Technologies, Llc FET array bypass module
KR20170008553A (ko) * 2015-07-14 2017-01-24 에스케이하이닉스 주식회사 반도체 장치 및 그 리페어 방법
CN114842793B (zh) * 2022-03-27 2022-12-20 深圳市美矽微半导体有限公司 一种具有冗余地址电路的led驱动芯片

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4342005A (en) * 1980-06-26 1982-07-27 Rca Corporation Television intermediate frequency amplifier with feedback stabilization
JPS5718109A (en) * 1980-07-08 1982-01-29 Toshiba Corp Sound volume controlling circuit
US4494220A (en) * 1982-11-24 1985-01-15 At&T Bell Laboratories Folded bit line memory with one decoder per pair of spare rows
US4720817A (en) * 1985-02-26 1988-01-19 Texas Instruments Incorporated Fuse selection of predecoder output
US4718086A (en) * 1986-03-27 1988-01-05 Rca Corporation AGC in sound channel of system for processing a scrambled video signal
JP2558787B2 (ja) * 1988-02-15 1996-11-27 松下電子工業株式会社 記憶装置
US4992984A (en) * 1989-12-28 1991-02-12 International Business Machines Corporation Memory module utilizing partially defective memory chips

Also Published As

Publication number Publication date
US5337277A (en) 1994-08-09
GB9222904D0 (en) 1992-12-16
GB2265031A (en) 1993-09-15
KR940007241B1 (ko) 1994-08-10
GB2265031B (en) 1995-08-30
DE4234155A1 (de) 1993-09-23
FR2688328A1 (fr) 1993-09-10
FR2688328B1 (fr) 1995-10-20
CN1076300A (zh) 1993-09-15
CN1032282C (zh) 1996-07-10
ITMI922473A0 (it) 1992-10-28
JPH05282893A (ja) 1993-10-29
KR930020475A (ko) 1993-10-19
DE4234155C2 (de) 1995-04-13
ITMI922473A1 (it) 1994-04-28

Similar Documents

Publication Publication Date Title
IT1255932B (it) Circuito di ridondanza di riga per un dispositivo di memoria a semiconduttore.
US4601019B1 (en) Memory with redundancy
NL193622B (nl) Halfgeleidergeheugeninrichting met redundant blok.
KR950024220A (ko) 용장 회로 장치
GB2129585B (en) Memory system including a faulty rom array
KR950025788A (ko) 용장성 메모리셀의 테스트 절차용으로 활용가능한 용장성 디코더를 구비한 반도체 메모리 장치
KR930018593A (ko) 반도체 기억장치
GB2130770B (en) Improvements in or relating to semiconductor memories
KR970013336A (ko) 반도체기억장치
DE69330731D1 (de) Redundanzschaltung für Halbleiterspeichergeräte
JPH10275498A (ja) メモリをフォールトトレラントにする可変サイズ冗長置換アーキテクチャ
JPS60103469A (ja) 半導体記憶装置の冗長部
JPS563499A (en) Semiconductor memory device
TW364999B (en) Semiconductor memory devices with electrically programmable redundancy
DE68926159D1 (de) Halbleiterspeichergerät mit verbessertem Redundanzdekoder
KR940010113A (ko) 반도체 메모리장치의 결함구제 회로
DE69120000D1 (de) Halbleiterspeichergerät mit Redundanzschaltung
TW340219B (en) Semiconductor memory device having redundant memory cell array
EP1184788A3 (en) Nonvolatile semiconductor memory device
EP0553788A3 (en) Semiconductor memory device incorporating redundancy memory cells having parallel test function
WO2002017078A3 (en) Burst read incorporating output based redundancy
ITMI912849A1 (it) Dispositivo di ridondanza per sostituire una cella normale difettosa con una cella di riserva in un dispositivo di memoria a semiconduttore
DE59510285D1 (de) Integrierter Halbleiterspeicher mit Redundanzspeicherzellen
KR100266624B1 (ko) 메모리 리던던시 회로
JPH10116498A (ja) 半導体記憶装置

Legal Events

Date Code Title Description
0001 Granted
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19971028