IT1095322B - Transistore bipolare e metodo per la sua fabbricazione - Google Patents

Transistore bipolare e metodo per la sua fabbricazione

Info

Publication number
IT1095322B
IT1095322B IT22688/78A IT2268878A IT1095322B IT 1095322 B IT1095322 B IT 1095322B IT 22688/78 A IT22688/78 A IT 22688/78A IT 2268878 A IT2268878 A IT 2268878A IT 1095322 B IT1095322 B IT 1095322B
Authority
IT
Italy
Prior art keywords
manufacture
bipolar transistor
bipolar
transistor
Prior art date
Application number
IT22688/78A
Other languages
English (en)
Italian (it)
Other versions
IT7822688A0 (it
Original Assignee
Nippon Telegraph & Telephone
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph & Telephone filed Critical Nippon Telegraph & Telephone
Publication of IT7822688A0 publication Critical patent/IT7822688A0/it
Application granted granted Critical
Publication of IT1095322B publication Critical patent/IT1095322B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/421—Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body
    • H10P30/40—
    • H10P32/302—
    • H10P50/283—
    • H10P76/40—
IT22688/78A 1977-04-25 1978-04-26 Transistore bipolare e metodo per la sua fabbricazione IT1095322B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4673777A JPS53132275A (en) 1977-04-25 1977-04-25 Semiconductor device and its production

Publications (2)

Publication Number Publication Date
IT7822688A0 IT7822688A0 (it) 1978-04-26
IT1095322B true IT1095322B (it) 1985-08-10

Family

ID=12755633

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22688/78A IT1095322B (it) 1977-04-25 1978-04-26 Transistore bipolare e metodo per la sua fabbricazione

Country Status (8)

Country Link
US (2) US4531282A (enExample)
JP (1) JPS53132275A (enExample)
CA (1) CA1093703A (enExample)
DE (1) DE2818090A1 (enExample)
FR (1) FR2389236A1 (enExample)
GB (1) GB1573496A (enExample)
IT (1) IT1095322B (enExample)
NL (1) NL189220C (enExample)

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JPS53132275A (en) * 1977-04-25 1978-11-17 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its production
US4157269A (en) * 1978-06-06 1979-06-05 International Business Machines Corporation Utilizing polysilicon diffusion sources and special masking techniques
CA1129118A (en) * 1978-07-19 1982-08-03 Tetsushi Sakai Semiconductor devices and method of manufacturing the same
US4209349A (en) * 1978-11-03 1980-06-24 International Business Machines Corporation Method for forming a narrow dimensioned mask opening on a silicon body utilizing reactive ion etching
US4209350A (en) * 1978-11-03 1980-06-24 International Business Machines Corporation Method for forming diffusions having narrow dimensions utilizing reactive ion etching
CA1131367A (en) * 1978-11-13 1982-09-07 Keming W. Yeh Self-aligned mesfet having reduced series resistance
JPS561556A (en) * 1979-06-18 1981-01-09 Hitachi Ltd Semiconductor device
DE3051130C2 (de) * 1979-06-18 1997-07-31 Hitachi Ltd Verfahren zur Herstellung eines Bipolartransistors
US4229502A (en) * 1979-08-10 1980-10-21 Rca Corporation Low-resistivity polycrystalline silicon film
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JPS5676561A (en) * 1979-11-29 1981-06-24 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS5688352A (en) * 1979-12-21 1981-07-17 Toshiba Corp Manufacture of semiconductor integrated circuit
JPS5676563A (en) * 1979-11-29 1981-06-24 Toshiba Corp Manufacture of semiconductor integrated circuit
EP0029887B1 (de) * 1979-12-03 1983-07-13 International Business Machines Corporation Verfahren zum Herstellen eines vertikalen PNP-Transistors und so hergestellter Transistor
US4319932A (en) * 1980-03-24 1982-03-16 International Business Machines Corporation Method of making high performance bipolar transistor with polysilicon base contacts
JPS56135964A (en) * 1980-03-28 1981-10-23 Nec Corp Semiconductor device
JPS56148825A (en) * 1980-04-21 1981-11-18 Nec Corp Manufacture of semiconductor device
FR2501912A1 (fr) * 1981-03-13 1982-09-17 Efcis Transistor bipolaire lateral sur isolant et son procede de fabrication
JPS57206071A (en) * 1981-06-12 1982-12-17 Fujitsu Ltd Semiconductor device and manufacture thereof
FR2508704B1 (fr) * 1981-06-26 1985-06-07 Thomson Csf Procede de fabrication de transistors bipolaires integres de tres petites dimensions
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JPS6146063A (ja) * 1984-08-10 1986-03-06 Hitachi Ltd 半導体装置の製造方法
JPH0611053B2 (ja) * 1984-12-20 1994-02-09 三菱電機株式会社 半導体装置の製造方法
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JPH0658912B2 (ja) * 1985-05-07 1994-08-03 日本電信電話株式会社 バイポーラトランジスタの製造方法
JPS6246545A (ja) * 1985-08-23 1987-02-28 Nec Corp 半導体装置の製造方法
DE3571366D1 (en) * 1985-09-21 1989-08-10 Itt Ind Gmbh Deutsche Method of applying a contact to a contact area for a semiconductor substrate
JPS6272163A (ja) * 1985-09-26 1987-04-02 Toshiba Corp 半導体装置
US4843033A (en) * 1985-09-27 1989-06-27 Texas Instruments Incorporated Method for outdiffusion of zinc into III-V substrates using zinc tungsten silicide as dopant source
DE3680520D1 (de) * 1986-03-22 1991-08-29 Itt Ind Gmbh Deutsche Verfahren zum herstellen einer monolithisch integrierten schaltung mit mindestens einem bipolaren planartransistor.
JPH0628266B2 (ja) * 1986-07-09 1994-04-13 株式会社日立製作所 半導体装置の製造方法
US4722908A (en) * 1986-08-28 1988-02-02 Fairchild Semiconductor Corporation Fabrication of a bipolar transistor with a polysilicon ribbon
JPS6362272A (ja) * 1986-09-02 1988-03-18 Seiko Instr & Electronics Ltd 半導体装置の製造方法
US4883772A (en) * 1986-09-11 1989-11-28 National Semiconductor Corporation Process for making a self-aligned silicide shunt
US4700461A (en) * 1986-09-29 1987-10-20 Massachusetts Institute Of Technology Process for making junction field-effect transistors
JPS63193562A (ja) * 1987-02-06 1988-08-10 Toshiba Corp バイポ−ラトランジスタの製造方法
US4734382A (en) * 1987-02-20 1988-03-29 Fairchild Semiconductor Corporation BiCMOS process having narrow bipolar emitter and implanted aluminum isolation
US4847670A (en) * 1987-05-11 1989-07-11 International Business Machines Corporation High performance sidewall emitter transistor
US4916083A (en) * 1987-05-11 1990-04-10 International Business Machines Corporation High performance sidewall emitter transistor
US5051805A (en) * 1987-07-15 1991-09-24 Rockwell International Corporation Sub-micron bipolar devices with sub-micron contacts
US4839303A (en) * 1987-10-13 1989-06-13 Northrop Corporation Planar bipolar transistors including heterojunction transistors and method
GB2218565B (en) * 1988-05-10 1992-04-01 Stc Plc Varicap diode structure
US5096842A (en) * 1988-05-16 1992-03-17 Kabushiki Kaisha Toshiba Method of fabricating bipolar transistor using self-aligned polysilicon technology
US5244822A (en) * 1988-05-16 1993-09-14 Kabushiki Kaisha Toshiba Method of fabricating bipolar transistor using self-aligned polysilicon technology
US5468989A (en) * 1988-06-02 1995-11-21 Hitachi, Ltd. Semiconductor integrated circuit device having an improved vertical bipolar transistor structure
JPH027529A (ja) * 1988-06-27 1990-01-11 Nec Corp バイポーラトランジスタ及びその製造方法
US5204276A (en) * 1988-12-06 1993-04-20 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device
US5109263A (en) * 1989-07-28 1992-04-28 Hitachi, Ltd. Semiconductor device with optimal distance between emitter and trench isolation
US4980304A (en) * 1990-02-20 1990-12-25 At&T Bell Laboratories Process for fabricating a bipolar transistor with a self-aligned contact
US4997775A (en) * 1990-02-26 1991-03-05 Cook Robert K Method for forming a complementary bipolar transistor structure including a self-aligned vertical PNP transistor
DE69127143T2 (de) * 1990-06-25 1997-12-18 Matsushita Electronics Corp Kaltkathodenelement
US5126285A (en) * 1990-07-02 1992-06-30 Motorola, Inc. Method for forming a buried contact
US5290396A (en) * 1991-06-06 1994-03-01 Lsi Logic Corporation Trench planarization techniques
US5413966A (en) * 1990-12-20 1995-05-09 Lsi Logic Corporation Shallow trench etch
JP2625602B2 (ja) * 1991-01-18 1997-07-02 インターナショナル・ビジネス・マシーンズ・コーポレイション 集積回路デバイスの製造プロセス
US5248625A (en) * 1991-06-06 1993-09-28 Lsi Logic Corporation Techniques for forming isolation structures
US5225358A (en) * 1991-06-06 1993-07-06 Lsi Logic Corporation Method of forming late isolation with polishing
US5252503A (en) * 1991-06-06 1993-10-12 Lsi Logic Corporation Techniques for forming isolation structures
JP3061891B2 (ja) * 1991-06-21 2000-07-10 キヤノン株式会社 半導体装置の製造方法
JPH04373133A (ja) * 1991-06-24 1992-12-25 Hitachi Ltd 半導体装置
JPH07501181A (ja) * 1991-10-23 1995-02-02 マイクロユニティ　システムズ　エンジニアリング，インコーポレイテッド ベータ特性とパンチスルー特性を改良したバイポーラジャンクショントランジスタ
US5286996A (en) * 1991-12-31 1994-02-15 Purdue Research Foundation Triple self-aligned bipolar junction transistor
DE4308958A1 (de) * 1993-03-21 1994-09-22 Prema Paezisionselektronik Gmb Verfahren zur Herstellung von Bipolartransistoren
US5420051A (en) * 1993-12-28 1995-05-30 Intel Corporation Pre-poly emitter implant
US5932922A (en) * 1994-08-08 1999-08-03 Semicoa Semiconductors Uniform current density and high current gain bipolar transistor
US5545574A (en) * 1995-05-19 1996-08-13 Motorola, Inc. Process for forming a semiconductor device having a metal-semiconductor compound
US5705846A (en) * 1995-07-31 1998-01-06 National Semiconductor Corporation CMOS-compatible active pixel image array using vertical pnp cell
KR100191270B1 (ko) * 1995-09-29 1999-06-15 윤종용 바이폴라 반도체장치 및 그의 제조방법
KR100190029B1 (ko) * 1996-03-19 1999-06-01 윤종용 바이씨모스 에스램 소자의 제조방법
JP3688816B2 (ja) * 1996-07-16 2005-08-31 株式会社東芝 半導体装置の製造方法
KR100248504B1 (ko) * 1997-04-01 2000-03-15 윤종용 바이폴라 트랜지스터 및 그의 제조 방법
US6136674A (en) * 1999-02-08 2000-10-24 Advanced Micro Devices, Inc. Mosfet with gate plug using differential oxide growth
US7494887B1 (en) * 2004-08-17 2009-02-24 Hrl Laboratories, Llc Method and apparatus for fabricating heterojunction bipolar transistors with simultaneous low base resistance and short base transit time
US7709341B2 (en) * 2006-06-02 2010-05-04 Micron Technology, Inc. Methods of shaping vertical single crystal silicon walls and resulting structures
US7625776B2 (en) * 2006-06-02 2009-12-01 Micron Technology, Inc. Methods of fabricating intermediate semiconductor structures by selectively etching pockets of implanted silicon
US7628932B2 (en) 2006-06-02 2009-12-08 Micron Technology, Inc. Wet etch suitable for creating square cuts in si
JP2008135504A (ja) * 2006-11-28 2008-06-12 Elpida Memory Inc 半導体装置の製造方法
FR3100381B1 (fr) * 2019-08-29 2021-08-20 Commissariat Energie Atomique Procédé de fabrication d’une cellule photovoltaïque
US11404540B2 (en) 2019-10-01 2022-08-02 Analog Devices International Unlimited Company Bipolar junction transistor, and a method of forming a collector for a bipolar junction transistor
US11563084B2 (en) 2019-10-01 2023-01-24 Analog Devices International Unlimited Company Bipolar junction transistor, and a method of forming an emitter for a bipolar junction transistor
US11355585B2 (en) 2019-10-01 2022-06-07 Analog Devices International Unlimited Company Bipolar junction transistor, and a method of forming a charge control structure for a bipolar junction transistor

Family Cites Families (15)

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GB1061506A (en) * 1965-03-31 1967-03-15 Ibm Method of forming a semiconductor device and device so made
DE2149705A1 (de) * 1970-10-06 1972-04-13 Motorola Inc Halbleiteranordnung und Verfahren zu ihrer Herstellung
US3843425A (en) * 1971-04-05 1974-10-22 Rca Corp Overlay transistor employing highly conductive semiconductor grid and method for making
US3925880A (en) * 1971-04-29 1975-12-16 Signetics Corp Semiconductor assembly with beam lead construction and method
JPS5145951B2 (enExample) * 1972-06-07 1976-12-06
US3847687A (en) * 1972-11-15 1974-11-12 Motorola Inc Methods of forming self aligned transistor structure having polycrystalline contacts
US3945030A (en) * 1973-01-15 1976-03-16 Signetics Corporation Semiconductor structure having contact openings with sloped side walls
GB1465078A (en) * 1973-07-30 1977-02-23 Hitachi Ltd Semiconductor devices
US3896473A (en) * 1973-12-04 1975-07-22 Bell Telephone Labor Inc Gallium arsenide schottky barrier avalance diode array
US4006046A (en) * 1975-04-21 1977-02-01 Trw Inc. Method for compensating for emitter-push effect in the fabrication of transistors
JPS5936396B2 (ja) * 1975-09-30 1984-09-03 松下電工株式会社 位相制御式放電灯点灯装置
US4087986A (en) * 1976-03-29 1978-05-09 Parker-Hannifin Corporation Control valve
JPS53132275A (en) * 1977-04-25 1978-11-17 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its production
US4157269A (en) * 1978-06-06 1979-06-05 International Business Machines Corporation Utilizing polysilicon diffusion sources and special masking techniques
US4417385A (en) * 1982-08-09 1983-11-29 General Electric Company Processes for manufacturing insulated-gate semiconductor devices with integral shorts

Also Published As

Publication number Publication date
DE2818090C2 (enExample) 1989-02-23
DE2818090A1 (de) 1978-11-02
NL189220B (nl) 1992-09-01
US4920401A (en) 1990-04-24
JPS5527469B2 (enExample) 1980-07-21
JPS53132275A (en) 1978-11-17
FR2389236B1 (enExample) 1982-04-16
CA1093703A (en) 1981-01-13
US4531282A (en) 1985-07-30
GB1573496A (en) 1980-08-28
NL7804432A (nl) 1978-10-27
IT7822688A0 (it) 1978-04-26
FR2389236A1 (fr) 1978-11-24
NL189220C (nl) 1993-02-01

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970327