JPS5145951B2 - - Google Patents
Info
- Publication number
- JPS5145951B2 JPS5145951B2 JP47055993A JP5599372A JPS5145951B2 JP S5145951 B2 JPS5145951 B2 JP S5145951B2 JP 47055993 A JP47055993 A JP 47055993A JP 5599372 A JP5599372 A JP 5599372A JP S5145951 B2 JPS5145951 B2 JP S5145951B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
- H10D1/47—Resistors having no potential barriers
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- H10P32/302—
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- H10P95/00—
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- H10W74/43—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/118—Oxide films
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
Landscapes
- Semiconductor Integrated Circuits (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP47055993A JPS5145951B2 (enExample) | 1972-06-07 | 1972-06-07 | |
| GB2484773A GB1384206A (en) | 1972-06-07 | 1973-05-24 | Method of forming a resistance layer in a semiconductor integrated circuit device |
| US05/365,371 US3988181A (en) | 1972-06-07 | 1973-05-30 | Method of doping a polycrystalline silicon layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP47055993A JPS5145951B2 (enExample) | 1972-06-07 | 1972-06-07 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4917984A JPS4917984A (enExample) | 1974-02-16 |
| JPS5145951B2 true JPS5145951B2 (enExample) | 1976-12-06 |
Family
ID=13014592
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP47055993A Expired JPS5145951B2 (enExample) | 1972-06-07 | 1972-06-07 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US3988181A (enExample) |
| JP (1) | JPS5145951B2 (enExample) |
| GB (1) | GB1384206A (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53132275A (en) * | 1977-04-25 | 1978-11-17 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and its production |
| JPS61206231A (ja) * | 1985-03-08 | 1986-09-12 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| US4764026A (en) * | 1986-07-07 | 1988-08-16 | Varian Associates, Inc. | Semiconductor wafer temperature measuring device and method |
| WO1990011618A1 (fr) * | 1989-03-23 | 1990-10-04 | Oki Electric Industry Co., Ltd. | Procede de production de dispositifs semi-conducteurs |
| EP0413982B1 (en) * | 1989-07-27 | 1997-05-14 | Junichi Nishizawa | Impurity doping method with adsorbed diffusion source |
| EP0417456A3 (en) * | 1989-08-11 | 1991-07-03 | Seiko Instruments Inc. | Method of producing semiconductor device |
| EP0430166A3 (en) * | 1989-12-01 | 1993-05-12 | Seiko Instruments Inc. | Method of doping impurity into semiconductor films and patterned semiconductor strip |
| CA2031254A1 (en) * | 1989-12-01 | 1991-06-02 | Kenji Aoki | Doping method of barrier region in semiconductor device |
| CA2031253A1 (en) * | 1989-12-01 | 1991-06-02 | Kenji Aoki | Method of producing bipolar transistor |
| JP2906260B2 (ja) * | 1989-12-01 | 1999-06-14 | セイコーインスツルメンツ株式会社 | Ｐｎ接合素子の製造方法 |
| JP2920546B2 (ja) * | 1989-12-06 | 1999-07-19 | セイコーインスツルメンツ株式会社 | 同極ゲートｍｉｓトランジスタの製造方法 |
| EP0505877A2 (en) * | 1991-03-27 | 1992-09-30 | Seiko Instruments Inc. | Impurity doping method with adsorbed diffusion source |
| JP3001362B2 (ja) * | 1993-12-17 | 2000-01-24 | 日本電気株式会社 | 半導体装置の製造方法 |
| US7425736B2 (en) * | 2005-06-07 | 2008-09-16 | United Microelectronics Corp. | Silicon layer with high resistance and fabricating method thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3460007A (en) * | 1967-07-03 | 1969-08-05 | Rca Corp | Semiconductor junction device |
| US3646665A (en) * | 1970-05-22 | 1972-03-07 | Gen Electric | Complementary mis-fet devices and method of fabrication |
| US3673679A (en) * | 1970-12-01 | 1972-07-04 | Texas Instruments Inc | Complementary insulated gate field effect devices |
| US3690968A (en) * | 1971-03-05 | 1972-09-12 | Advanced Memory Syst | Method for forming a field effect device |
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1972
- 1972-06-07 JP JP47055993A patent/JPS5145951B2/ja not_active Expired
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1973
- 1973-05-24 GB GB2484773A patent/GB1384206A/en not_active Expired
- 1973-05-30 US US05/365,371 patent/US3988181A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4917984A (enExample) | 1974-02-16 |
| USB365371I5 (enExample) | 1975-01-28 |
| US3988181A (en) | 1976-10-26 |
| GB1384206A (en) | 1975-02-19 |