JPS5145951B2 - - Google Patents

Info

Publication number
JPS5145951B2
JPS5145951B2 JP47055993A JP5599372A JPS5145951B2 JP S5145951 B2 JPS5145951 B2 JP S5145951B2 JP 47055993 A JP47055993 A JP 47055993A JP 5599372 A JP5599372 A JP 5599372A JP S5145951 B2 JPS5145951 B2 JP S5145951B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP47055993A
Other versions
JPS4917984A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP47055993A priority Critical patent/JPS5145951B2/ja
Priority to GB2484773A priority patent/GB1384206A/en
Priority to US05/365,371 priority patent/US3988181A/en
Publication of JPS4917984A publication Critical patent/JPS4917984A/ja
Publication of JPS5145951B2 publication Critical patent/JPS5145951B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/20—Resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3215—Doping the layers
    • H01L21/32155—Doping polycristalline - or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
JP47055993A 1972-06-07 1972-06-07 Expired JPS5145951B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP47055993A JPS5145951B2 (ja) 1972-06-07 1972-06-07
GB2484773A GB1384206A (en) 1972-06-07 1973-05-24 Method of forming a resistance layer in a semiconductor integrated circuit device
US05/365,371 US3988181A (en) 1972-06-07 1973-05-30 Method of doping a polycrystalline silicon layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47055993A JPS5145951B2 (ja) 1972-06-07 1972-06-07

Publications (2)

Publication Number Publication Date
JPS4917984A JPS4917984A (ja) 1974-02-16
JPS5145951B2 true JPS5145951B2 (ja) 1976-12-06

Family

ID=13014592

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47055993A Expired JPS5145951B2 (ja) 1972-06-07 1972-06-07

Country Status (3)

Country Link
US (1) US3988181A (ja)
JP (1) JPS5145951B2 (ja)
GB (1) GB1384206A (ja)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53132275A (en) * 1977-04-25 1978-11-17 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its production
JPS61206231A (ja) * 1985-03-08 1986-09-12 Mitsubishi Electric Corp 半導体装置およびその製造方法
US4764026A (en) * 1986-07-07 1988-08-16 Varian Associates, Inc. Semiconductor wafer temperature measuring device and method
WO1990011618A1 (en) * 1989-03-23 1990-10-04 Oki Electric Industry Co., Ltd. Method of producing semiconductor devices
AU5977190A (en) * 1989-07-27 1991-01-31 Nishizawa, Junichi Impurity doping method with adsorbed diffusion source
EP0417456A3 (en) * 1989-08-11 1991-07-03 Seiko Instruments Inc. Method of producing semiconductor device
EP0430274A3 (en) * 1989-12-01 1993-03-24 Seiko Instruments Inc. Method of producing bipolar transistor
CA2031254A1 (en) * 1989-12-01 1991-06-02 Kenji Aoki Doping method of barrier region in semiconductor device
JP2906260B2 (ja) * 1989-12-01 1999-06-14 セイコーインスツルメンツ株式会社 Ｐｎ接合素子の製造方法
EP0430166A3 (en) * 1989-12-01 1993-05-12 Seiko Instruments Inc. Method of doping impurity into semiconductor films and patterned semiconductor strip
JP2920546B2 (ja) * 1989-12-06 1999-07-19 セイコーインスツルメンツ株式会社 同極ゲートｍｉｓトランジスタの製造方法
EP0505877A2 (en) * 1991-03-27 1992-09-30 Seiko Instruments Inc. Impurity doping method with adsorbed diffusion source
JP3001362B2 (ja) * 1993-12-17 2000-01-24 日本電気株式会社 半導体装置の製造方法
US7425736B2 (en) * 2005-06-07 2008-09-16 United Microelectronics Corp. Silicon layer with high resistance and fabricating method thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3460007A (en) * 1967-07-03 1969-08-05 Rca Corp Semiconductor junction device
US3646665A (en) * 1970-05-22 1972-03-07 Gen Electric Complementary mis-fet devices and method of fabrication
US3673679A (en) * 1970-12-01 1972-07-04 Texas Instruments Inc Complementary insulated gate field effect devices
US3690968A (en) * 1971-03-05 1972-09-12 Advanced Memory Syst Method for forming a field effect device

Also Published As

Publication number Publication date
USB365371I5 (ja) 1975-01-28
GB1384206A (en) 1975-02-19
US3988181A (en) 1976-10-26
JPS4917984A (ja) 1974-02-16

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