IT1089299B - Procedimento per fabbricare un dispositivo semiconduttore - Google Patents
Procedimento per fabbricare un dispositivo semiconduttoreInfo
- Publication number
- IT1089299B IT1089299B IT31506/77A IT3150677A IT1089299B IT 1089299 B IT1089299 B IT 1089299B IT 31506/77 A IT31506/77 A IT 31506/77A IT 3150677 A IT3150677 A IT 3150677A IT 1089299 B IT1089299 B IT 1089299B
- Authority
- IT
- Italy
- Prior art keywords
- procedure
- manufacturing
- semiconductive device
- semiconductive
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Semiconductor Memories (AREA)
- Element Separation (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
- Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US76239877A | 1977-01-26 | 1977-01-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT1089299B true IT1089299B (it) | 1985-06-18 |
Family
ID=25064929
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT31506/77A IT1089299B (it) | 1977-01-26 | 1977-12-30 | Procedimento per fabbricare un dispositivo semiconduttore |
Country Status (5)
| Country | Link |
|---|---|
| JP (10) | JPS5394190A (ja) |
| DE (1) | DE2802048A1 (ja) |
| FR (5) | FR2382768A1 (ja) |
| GB (5) | GB1595543A (ja) |
| IT (1) | IT1089299B (ja) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1089299B (it) * | 1977-01-26 | 1985-06-18 | Mostek Corp | Procedimento per fabbricare un dispositivo semiconduttore |
| JPS5713772A (en) * | 1980-06-30 | 1982-01-23 | Hitachi Ltd | Semiconductor device and manufacture thereof |
| GB2290167B (en) | 1994-06-08 | 1999-01-20 | Hyundai Electronics Ind | Method for fabricating a semiconductor device |
| US9954176B1 (en) | 2016-10-06 | 2018-04-24 | International Business Machines Corporation | Dielectric treatments for carbon nanotube devices |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1053069A (ja) * | 1963-06-28 | |||
| GB1175392A (en) * | 1966-09-14 | 1969-12-23 | Hitachi Ltd | Method of Treating Protective Coatings for Semiconductor Devices |
| US3590477A (en) | 1968-12-19 | 1971-07-06 | Ibm | Method for fabricating insulated-gate field effect transistors having controlled operating characeristics |
| GB1292060A (en) * | 1969-04-15 | 1972-10-11 | Tokyo Shibaura Electric Co | A method of manufacturing a semiconductor device |
| US3825997A (en) * | 1969-10-02 | 1974-07-30 | Sony Corp | Method for making semiconductor device |
| DE2040180B2 (de) | 1970-01-22 | 1977-08-25 | Intel Corp, Mountain View, Calif. (V.St.A.) | Verfahren zur verhinderung von mechanischen bruechen einer duennen, die oberflaeche eines halbleiterkoerpers ueberdeckende isolierschichten ueberziehenden elektrisch leitenden schicht |
| NL7109327A (ja) * | 1970-07-10 | 1972-01-12 | ||
| US3811974A (en) * | 1971-07-19 | 1974-05-21 | North American Rockwell | Silicon nitride-silicon oxide etchant |
| JPS5112507B2 (ja) | 1971-10-22 | 1976-04-20 | ||
| JPS5139835B2 (ja) * | 1971-12-27 | 1976-10-29 | ||
| DE2218035A1 (de) * | 1972-04-14 | 1973-10-31 | Vepa Ag | Verfahren und vorrichtung zum kontinuierlichen fixieren und schrumpfen von synthese-fasern |
| DE2320195A1 (de) | 1972-04-24 | 1973-12-13 | Standard Microsyst Smc | Durch ionenimplantation hergestellter speicherfeldeffekt-transistor mit siliciumbasis |
| US3810795A (en) * | 1972-06-30 | 1974-05-14 | Ibm | Method for making self-aligning structure for charge-coupled and bucket brigade devices |
| JPS5910073B2 (ja) * | 1972-10-27 | 1984-03-06 | 株式会社日立製作所 | シリコン・ゲ−トｍｏｓ型半導体装置の製造方法 |
| US3898105A (en) * | 1973-10-25 | 1975-08-05 | Mostek Corp | Method for making FET circuits |
| JPS50123274A (ja) * | 1974-03-15 | 1975-09-27 | ||
| JPS5912495B2 (ja) | 1974-10-01 | 1984-03-23 | カブシキガイシヤ ニツポンジドウシヤブヒンソウゴウケンキユウシヨ | 衝突検知装置 |
| US3984822A (en) * | 1974-12-30 | 1976-10-05 | Intel Corporation | Double polycrystalline silicon gate memory device |
| JPS51114079A (en) * | 1975-03-31 | 1976-10-07 | Fujitsu Ltd | Construction of semiconductor memory device |
| JPS51118393A (en) * | 1975-04-10 | 1976-10-18 | Matsushita Electric Ind Co Ltd | Semicondector unit |
| JPS51118392A (en) | 1975-04-10 | 1976-10-18 | Matsushita Electric Ind Co Ltd | Manuforcturing process for semiconductor unit |
| US4002511A (en) * | 1975-04-16 | 1977-01-11 | Ibm Corporation | Method for forming masks comprising silicon nitride and novel mask structures produced thereby |
| US4012757A (en) * | 1975-05-05 | 1977-03-15 | Intel Corporation | Contactless random-access memory cell and cell pair |
| JPS51142982A (en) * | 1975-05-05 | 1976-12-08 | Intel Corp | Method of producing single crystal silicon ic |
| JPS51139263A (en) * | 1975-05-28 | 1976-12-01 | Hitachi Ltd | Method of selective oxidation of silicon substrate |
| NL7506594A (nl) * | 1975-06-04 | 1976-12-07 | Philips Nv | Werkwijze voor het vervaardigen van een halfge- leiderinrichting en halfgeleiderinrichting ver- vaardigd met behulp van de werkwijze. |
| IT1061530B (it) * | 1975-06-12 | 1983-04-30 | Ncr Co | Metodo per la formazione di connessioni elettriche in regioni selezionate di una superficie di un dispositivo semiconduttore a circuito integrato |
| DE2532594B2 (de) * | 1975-07-21 | 1980-05-22 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Halbleiterspeicher |
| GB1540450A (en) | 1975-10-29 | 1979-02-14 | Intel Corp | Self-aligning double polycrystalline silicon etching process |
| US4240092A (en) | 1976-09-13 | 1980-12-16 | Texas Instruments Incorporated | Random access memory cell with different capacitor and transistor oxide thickness |
| JPS6034270B2 (ja) * | 1976-01-12 | 1985-08-07 | テキサス・インスツルメンツ・インコ−ポレイテツド | 半導体メモリ装置およびその製造方法 |
| US4112575A (en) * | 1976-12-20 | 1978-09-12 | Texas Instruments Incorporated | Fabrication methods for the high capacity ram cell |
| IT1089299B (it) * | 1977-01-26 | 1985-06-18 | Mostek Corp | Procedimento per fabbricare un dispositivo semiconduttore |
| FR2584786B1 (fr) * | 1985-07-15 | 1989-10-27 | Valeo | Montage de butee de debrayage et butee de debrayage propre a un tel montage |
-
1977
- 1977-12-30 IT IT31506/77A patent/IT1089299B/it active
-
1978
- 1978-01-18 DE DE19782802048 patent/DE2802048A1/de active Granted
- 1978-01-25 GB GB3022/78A patent/GB1595543A/en not_active Expired
- 1978-01-25 FR FR7802068A patent/FR2382768A1/fr active Granted
- 1978-01-25 GB GB32523/79A patent/GB1595545A/en not_active Expired
- 1978-01-25 GB GB32525/79A patent/GB1595547A/en not_active Expired
- 1978-01-25 GB GB19043/80A patent/GB1595548A/en not_active Expired
- 1978-01-25 GB GB32524/79A patent/GB1595546A/en not_active Expired
- 1978-01-26 JP JP679578A patent/JPS5394190A/ja active Pending
- 1978-06-08 FR FR7817175A patent/FR2382770A1/fr active Granted
- 1978-06-08 FR FR7817176A patent/FR2382745A1/fr active Granted
- 1978-06-08 FR FR7817173A patent/FR2382769A1/fr active Granted
- 1978-06-08 FR FR7817174A patent/FR2382767A1/fr active Granted
-
1981
- 1981-08-07 JP JP56123141A patent/JPS5760852A/ja active Pending
-
1987
- 1987-01-29 JP JP62017430A patent/JPS62290152A/ja active Granted
- 1987-01-29 JP JP62017428A patent/JPS62290147A/ja active Pending
- 1987-01-29 JP JP62017429A patent/JPS62290180A/ja active Pending
- 1987-01-29 JP JP62017431A patent/JPS62290181A/ja active Pending
-
1991
- 1991-08-19 JP JP1991065301U patent/JPH04107840U/ja active Pending
-
1995
- 1995-10-09 JP JP7261375A patent/JP2720911B2/ja not_active Expired - Lifetime
- 1995-10-09 JP JP7261450A patent/JPH0918003A/ja active Pending
- 1995-10-09 JP JP7261151A patent/JPH098299A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2382767B1 (ja) | 1983-06-03 |
| JPH0917799A (ja) | 1997-01-17 |
| FR2382770B1 (ja) | 1983-06-03 |
| JPS62290147A (ja) | 1987-12-17 |
| JPH04107840U (ja) | 1992-09-17 |
| FR2382768A1 (fr) | 1978-09-29 |
| JPS62290180A (ja) | 1987-12-17 |
| FR2382768B1 (ja) | 1983-06-10 |
| JPH098299A (ja) | 1997-01-10 |
| JPS62290181A (ja) | 1987-12-17 |
| GB1595547A (en) | 1981-08-12 |
| FR2382767A1 (fr) | 1978-09-29 |
| JPH0362300B2 (ja) | 1991-09-25 |
| GB1595546A (en) | 1981-08-12 |
| JPS5394190A (en) | 1978-08-17 |
| GB1595548A (en) | 1981-08-12 |
| FR2382745B1 (ja) | 1983-06-03 |
| DE2802048A1 (de) | 1978-07-27 |
| JPH0918003A (ja) | 1997-01-17 |
| GB1595545A (en) | 1981-08-12 |
| JPS5760852A (en) | 1982-04-13 |
| GB1595543A (en) | 1981-08-12 |
| FR2382745A1 (fr) | 1978-09-29 |
| FR2382770A1 (fr) | 1978-09-29 |
| JPS62290152A (ja) | 1987-12-17 |
| DE2802048C2 (ja) | 1993-02-11 |
| JP2720911B2 (ja) | 1998-03-04 |
| FR2382769B1 (ja) | 1983-06-03 |
| FR2382769A1 (fr) | 1978-09-29 |
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