JPS5394190A - Method of producing semiconductor - Google Patents

Method of producing semiconductor

Info

Publication number
JPS5394190A
JPS5394190A JP679578A JP679578A JPS5394190A JP S5394190 A JPS5394190 A JP S5394190A JP 679578 A JP679578 A JP 679578A JP 679578 A JP679578 A JP 679578A JP S5394190 A JPS5394190 A JP S5394190A
Authority
JP
Japan
Prior art keywords
producing semiconductor
semiconductor
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP679578A
Other languages
English (en)
Inventor
Chiyuu Chiyan Chiu
Mai Chiyao
Suuii Minto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CTU of Delaware Inc
Original Assignee
Mostek Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mostek Corp filed Critical Mostek Corp
Publication of JPS5394190A publication Critical patent/JPS5394190A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Element Separation (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
JP679578A 1977-01-26 1978-01-26 Method of producing semiconductor Pending JPS5394190A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US76239877A 1977-01-26 1977-01-26

Publications (1)

Publication Number Publication Date
JPS5394190A true JPS5394190A (en) 1978-08-17

Family

ID=25064929

Family Applications (10)

Application Number Title Priority Date Filing Date
JP679578A Pending JPS5394190A (en) 1977-01-26 1978-01-26 Method of producing semiconductor
JP56123141A Pending JPS5760852A (en) 1977-01-26 1981-08-07 Method of producing semiconductor device
JP62017430A Granted JPS62290152A (ja) 1977-01-26 1987-01-29 半導体装置の製法
JP62017428A Pending JPS62290147A (ja) 1977-01-26 1987-01-29 半導体装置の製法
JP62017429A Pending JPS62290180A (ja) 1977-01-26 1987-01-29 半導体装置の製法
JP62017431A Pending JPS62290181A (ja) 1977-01-26 1987-01-29 半導体装置の製法
JP1991065301U Pending JPH04107840U (ja) 1977-01-26 1991-08-19 半導体装置
JP7261375A Expired - Lifetime JP2720911B2 (ja) 1977-01-26 1995-10-09 半導体装置用基板表面を用意する方法
JP7261450A Pending JPH0918003A (ja) 1977-01-26 1995-10-09 電界効果トランジスタの製造方法
JP7261151A Pending JPH098299A (ja) 1977-01-26 1995-10-09 半導体装置及びその製造方法

Family Applications After (9)

Application Number Title Priority Date Filing Date
JP56123141A Pending JPS5760852A (en) 1977-01-26 1981-08-07 Method of producing semiconductor device
JP62017430A Granted JPS62290152A (ja) 1977-01-26 1987-01-29 半導体装置の製法
JP62017428A Pending JPS62290147A (ja) 1977-01-26 1987-01-29 半導体装置の製法
JP62017429A Pending JPS62290180A (ja) 1977-01-26 1987-01-29 半導体装置の製法
JP62017431A Pending JPS62290181A (ja) 1977-01-26 1987-01-29 半導体装置の製法
JP1991065301U Pending JPH04107840U (ja) 1977-01-26 1991-08-19 半導体装置
JP7261375A Expired - Lifetime JP2720911B2 (ja) 1977-01-26 1995-10-09 半導体装置用基板表面を用意する方法
JP7261450A Pending JPH0918003A (ja) 1977-01-26 1995-10-09 電界効果トランジスタの製造方法
JP7261151A Pending JPH098299A (ja) 1977-01-26 1995-10-09 半導体装置及びその製造方法

Country Status (5)

Country Link
JP (10) JPS5394190A (ja)
DE (1) DE2802048A1 (ja)
FR (5) FR2382768A1 (ja)
GB (5) GB1595543A (ja)
IT (1) IT1089299B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH098299A (ja) * 1977-01-26 1997-01-10 Sgs Thomson Microelectron Inc 半導体装置及びその製造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5713772A (en) * 1980-06-30 1982-01-23 Hitachi Ltd Semiconductor device and manufacture thereof
GB2290167B (en) 1994-06-08 1999-01-20 Hyundai Electronics Ind Method for fabricating a semiconductor device
US9954176B1 (en) 2016-10-06 2018-04-24 International Business Machines Corporation Dielectric treatments for carbon nanotube devices

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5287380A (en) * 1976-05-10 1977-07-21 Texas Instruments Inc Semiconductor memory and method of producing same
JPS5394782A (en) * 1976-12-20 1978-08-19 Texas Instruments Inc Method of producing large capacity memory cell array

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1053069A (ja) * 1963-06-28
GB1175392A (en) * 1966-09-14 1969-12-23 Hitachi Ltd Method of Treating Protective Coatings for Semiconductor Devices
US3590477A (en) 1968-12-19 1971-07-06 Ibm Method for fabricating insulated-gate field effect transistors having controlled operating characeristics
GB1292060A (en) * 1969-04-15 1972-10-11 Tokyo Shibaura Electric Co A method of manufacturing a semiconductor device
US3825997A (en) * 1969-10-02 1974-07-30 Sony Corp Method for making semiconductor device
DE2040180B2 (de) 1970-01-22 1977-08-25 Intel Corp, Mountain View, Calif. (V.St.A.) Verfahren zur verhinderung von mechanischen bruechen einer duennen, die oberflaeche eines halbleiterkoerpers ueberdeckende isolierschichten ueberziehenden elektrisch leitenden schicht
NL7109327A (ja) * 1970-07-10 1972-01-12
US3811974A (en) * 1971-07-19 1974-05-21 North American Rockwell Silicon nitride-silicon oxide etchant
JPS5112507B2 (ja) 1971-10-22 1976-04-20
JPS5139835B2 (ja) * 1971-12-27 1976-10-29
DE2218035A1 (de) * 1972-04-14 1973-10-31 Vepa Ag Verfahren und vorrichtung zum kontinuierlichen fixieren und schrumpfen von synthese-fasern
DE2320195A1 (de) 1972-04-24 1973-12-13 Standard Microsyst Smc Durch ionenimplantation hergestellter speicherfeldeffekt-transistor mit siliciumbasis
US3810795A (en) * 1972-06-30 1974-05-14 Ibm Method for making self-aligning structure for charge-coupled and bucket brigade devices
JPS5910073B2 (ja) * 1972-10-27 1984-03-06 株式会社日立製作所 シリコン・ゲ−トｍｏｓ型半導体装置の製造方法
US3898105A (en) * 1973-10-25 1975-08-05 Mostek Corp Method for making FET circuits
JPS50123274A (ja) * 1974-03-15 1975-09-27
JPS5912495B2 (ja) 1974-10-01 1984-03-23 カブシキガイシヤ ニツポンジドウシヤブヒンソウゴウケンキユウシヨ 衝突検知装置
US3984822A (en) * 1974-12-30 1976-10-05 Intel Corporation Double polycrystalline silicon gate memory device
JPS51114079A (en) * 1975-03-31 1976-10-07 Fujitsu Ltd Construction of semiconductor memory device
JPS51118393A (en) * 1975-04-10 1976-10-18 Matsushita Electric Ind Co Ltd Semicondector unit
JPS51118392A (en) 1975-04-10 1976-10-18 Matsushita Electric Ind Co Ltd Manuforcturing process for semiconductor unit
US4002511A (en) * 1975-04-16 1977-01-11 Ibm Corporation Method for forming masks comprising silicon nitride and novel mask structures produced thereby
US4012757A (en) * 1975-05-05 1977-03-15 Intel Corporation Contactless random-access memory cell and cell pair
JPS51142982A (en) * 1975-05-05 1976-12-08 Intel Corp Method of producing single crystal silicon ic
JPS51139263A (en) * 1975-05-28 1976-12-01 Hitachi Ltd Method of selective oxidation of silicon substrate
NL7506594A (nl) * 1975-06-04 1976-12-07 Philips Nv Werkwijze voor het vervaardigen van een halfge- leiderinrichting en halfgeleiderinrichting ver- vaardigd met behulp van de werkwijze.
IT1061530B (it) * 1975-06-12 1983-04-30 Ncr Co Metodo per la formazione di connessioni elettriche in regioni selezionate di una superficie di un dispositivo semiconduttore a circuito integrato
DE2532594B2 (de) * 1975-07-21 1980-05-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Halbleiterspeicher
GB1540450A (en) 1975-10-29 1979-02-14 Intel Corp Self-aligning double polycrystalline silicon etching process
US4240092A (en) 1976-09-13 1980-12-16 Texas Instruments Incorporated Random access memory cell with different capacitor and transistor oxide thickness
IT1089299B (it) * 1977-01-26 1985-06-18 Mostek Corp Procedimento per fabbricare un dispositivo semiconduttore
FR2584786B1 (fr) * 1985-07-15 1989-10-27 Valeo Montage de butee de debrayage et butee de debrayage propre a un tel montage

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5287380A (en) * 1976-05-10 1977-07-21 Texas Instruments Inc Semiconductor memory and method of producing same
JPS5394782A (en) * 1976-12-20 1978-08-19 Texas Instruments Inc Method of producing large capacity memory cell array

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH098299A (ja) * 1977-01-26 1997-01-10 Sgs Thomson Microelectron Inc 半導体装置及びその製造方法

Also Published As

Publication number Publication date
FR2382767B1 (ja) 1983-06-03
JPH0917799A (ja) 1997-01-17
FR2382770B1 (ja) 1983-06-03
JPS62290147A (ja) 1987-12-17
JPH04107840U (ja) 1992-09-17
FR2382768A1 (fr) 1978-09-29
IT1089299B (it) 1985-06-18
JPS62290180A (ja) 1987-12-17
FR2382768B1 (ja) 1983-06-10
JPH098299A (ja) 1997-01-10
JPS62290181A (ja) 1987-12-17
GB1595547A (en) 1981-08-12
FR2382767A1 (fr) 1978-09-29
JPH0362300B2 (ja) 1991-09-25
GB1595546A (en) 1981-08-12
GB1595548A (en) 1981-08-12
FR2382745B1 (ja) 1983-06-03
DE2802048A1 (de) 1978-07-27
JPH0918003A (ja) 1997-01-17
GB1595545A (en) 1981-08-12
JPS5760852A (en) 1982-04-13
GB1595543A (en) 1981-08-12
FR2382745A1 (fr) 1978-09-29
FR2382770A1 (fr) 1978-09-29
JPS62290152A (ja) 1987-12-17
DE2802048C2 (ja) 1993-02-11
JP2720911B2 (ja) 1998-03-04
FR2382769B1 (ja) 1983-06-03
FR2382769A1 (fr) 1978-09-29

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