IT1062510B - Dispositivo semiconduttore presentante una regione attiva di silicio amorfo - Google Patents

Dispositivo semiconduttore presentante una regione attiva di silicio amorfo

Info

Publication number
IT1062510B
IT1062510B IT25040/76A IT2504076A IT1062510B IT 1062510 B IT1062510 B IT 1062510B IT 25040/76 A IT25040/76 A IT 25040/76A IT 2504076 A IT2504076 A IT 2504076A IT 1062510 B IT1062510 B IT 1062510B
Authority
IT
Italy
Prior art keywords
active region
amorphous silicon
device presenting
semiconductive device
semiconductive
Prior art date
Application number
IT25040/76A
Other languages
English (en)
Italian (it)
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27482789&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=IT1062510(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Rca Corp filed Critical Rca Corp
Priority claimed from KR7601783A external-priority patent/KR810001312B1/ko
Priority claimed from KR1019800002296A external-priority patent/KR810001314B1/ko
Application granted granted Critical
Publication of IT1062510B publication Critical patent/IT1062510B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the Schottky type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Materials Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
IT25040/76A 1975-07-28 1976-07-05 Dispositivo semiconduttore presentante una regione attiva di silicio amorfo IT1062510B (it)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US59958875A 1975-07-28 1975-07-28
US65926876A 1976-02-19 1976-02-19
KR7601783A KR810001312B1 (ko) 1975-07-28 1976-07-22 비결정 실리콘 활성영역을 갖는 반도체장치
KR1019800002296A KR810001314B1 (ko) 1975-07-28 1980-06-11 비결정 실리콘 활성영역을 갖는 반도체 장치

Publications (1)

Publication Number Publication Date
IT1062510B true IT1062510B (it) 1984-10-20

Family

ID=27482789

Family Applications (1)

Application Number Title Priority Date Filing Date
IT25040/76A IT1062510B (it) 1975-07-28 1976-07-05 Dispositivo semiconduttore presentante una regione attiva di silicio amorfo

Country Status (10)

Country Link
JP (1) JPS5216990A (de)
AU (1) AU503228B2 (de)
CA (1) CA1091361A (de)
DE (1) DE2632987C3 (de)
FR (1) FR2304180A1 (de)
GB (1) GB1545897A (de)
HK (1) HK49683A (de)
IT (1) IT1062510B (de)
NL (1) NL185884C (de)
SE (1) SE407870B (de)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4196438A (en) 1976-09-29 1980-04-01 Rca Corporation Article and device having an amorphous silicon containing a halogen and method of fabrication
IT1092849B (it) * 1977-03-28 1985-07-12 Rca Corp Dispositivo fotovoltaico presentante una elevata efficienza di assorbimento
DE2715471A1 (de) * 1977-04-06 1978-10-19 Siemens Ag Solarzelle
FR2394173A1 (fr) * 1977-06-06 1979-01-05 Thomson Csf Procede de fabrication de dispositifs electroniques qui comportent une couche mince de silicium amorphe et dispositif electronique obtenu par un tel procede
US4117506A (en) * 1977-07-28 1978-09-26 Rca Corporation Amorphous silicon photovoltaic device having an insulating layer
DE2746967C2 (de) * 1977-10-19 1981-09-24 Siemens AG, 1000 Berlin und 8000 München Elektrofotographische Aufzeichnungstrommel
AU530905B2 (en) * 1977-12-22 1983-08-04 Canon Kabushiki Kaisha Electrophotographic photosensitive member
JPS54109762A (en) * 1978-02-16 1979-08-28 Sony Corp Semiconductor device
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
DE2915859C2 (de) 1978-04-20 1995-06-29 Canon Kk Fotoelektrische Wandlereinrichtung
DE2954732C2 (de) * 1978-04-20 1996-06-27 Canon Kk Verfahren zur Herstellung eines photoelektrischen Wandlers und photoelektrischer Wandler
US4162505A (en) * 1978-04-24 1979-07-24 Rca Corporation Inverted amorphous silicon solar cell utilizing cermet layers
US4167015A (en) * 1978-04-24 1979-09-04 Rca Corporation Cermet layer for amorphous silicon solar cells
US4163677A (en) * 1978-04-28 1979-08-07 Rca Corporation Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier
JPS54145537A (en) * 1978-05-04 1979-11-13 Canon Inc Preparation of electrophotographic image forming material
JPS54150995A (en) * 1978-05-19 1979-11-27 Hitachi Ltd Photo detector
JPS54109390A (en) * 1978-05-22 1979-08-27 Yamazaki Shunpei Photovoltaic force generating semiconductor and method of fabricating same
JPS54160568A (en) * 1978-06-09 1979-12-19 Anelva Corp Thin film forming equipment for discharge chemical reaction
JPS5511330A (en) * 1978-07-08 1980-01-26 Shunpei Yamazaki Semiconductor device having continuous junction
US4166919A (en) * 1978-09-25 1979-09-04 Rca Corporation Amorphous silicon solar cell allowing infrared transmission
JPS5821827B2 (ja) * 1979-02-09 1983-05-04 三洋電機株式会社 光起電力装置
JPS5511397A (en) * 1979-06-05 1980-01-26 Shunpei Yamazaki Semiconductor device with continuous connection and its production method
JPS5650035A (en) * 1979-09-28 1981-05-07 Sony Corp Target of image pick-up tube
JPS56132653A (en) * 1980-03-21 1981-10-17 Seiko Epson Corp Electronic desk top calculator with amorphous solar cell
JPS56133883A (en) * 1980-03-24 1981-10-20 Seisan Gijutsu Shinko Kyokai Photoelectric transducer
JPS56138962A (en) * 1980-03-31 1981-10-29 Canon Inc Photoelectric converter
US4400409A (en) * 1980-05-19 1983-08-23 Energy Conversion Devices, Inc. Method of making p-doped silicon films
JPS5721876A (en) * 1980-07-14 1982-02-04 Canon Inc Photosensor
JPS5756036A (en) * 1980-09-20 1982-04-03 Mitsubishi Electric Corp Plasma chemical vapor phase reactor
JPS57108782A (en) * 1980-12-26 1982-07-06 Seiko Epson Corp Detecting element of radiant rays
JPS57134218A (en) * 1981-02-13 1982-08-19 Riken Corp Manufacture of coupling main body
JPS5787275A (en) * 1981-09-12 1982-05-31 Canon Inc Information processor
JPS5898915A (ja) * 1981-12-09 1983-06-13 Konishiroku Photo Ind Co Ltd アモルフアスシリコン半導体装置
JPS57184257A (en) * 1982-04-26 1982-11-12 Shunpei Yamazaki Photoelectric converter
JPS59197127A (ja) * 1984-03-16 1984-11-08 Shunpei Yamazaki 半導体装置作製方法
JPS6197863U (de) * 1985-12-05 1986-06-23
JPH05121339A (ja) * 1992-03-26 1993-05-18 Semiconductor Energy Lab Co Ltd 被膜作製装置
JPH0653137A (ja) * 1992-07-31 1994-02-25 Canon Inc 水素化アモルファスシリコン膜の形成方法
JPH0794431A (ja) * 1993-04-23 1995-04-07 Canon Inc アモルファス半導体用基板、該基板を有するアモルファス半導体基板、及び該アモルファス半導体基板の製造方法
JPH06326024A (ja) * 1993-05-10 1994-11-25 Canon Inc 半導体基板の製造方法及び非晶質堆積膜の形成方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3462311A (en) * 1966-05-20 1969-08-19 Globe Union Inc Semiconductor device having improved resistance to radiation damage
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon

Also Published As

Publication number Publication date
AU1555876A (en) 1978-01-12
NL185884C (nl) 1996-01-23
NL185884B (nl) 1990-03-01
JPS5337718B2 (de) 1978-10-11
DE2632987A1 (de) 1977-02-10
AU503228B2 (en) 1979-08-30
DE2632987C3 (de) 1993-12-02
SE7608314L (sv) 1977-01-29
FR2304180B1 (de) 1982-07-30
SE407870B (sv) 1979-04-23
NL7607571A (nl) 1977-02-01
JPS5216990A (en) 1977-02-08
CA1091361A (en) 1980-12-09
FR2304180A1 (fr) 1976-10-08
DE2632987C2 (de) 1987-02-12
GB1545897A (en) 1979-05-16
HK49683A (en) 1983-11-11

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Legal Events

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19950729