JPS5650035A - Target of image pick-up tube - Google Patents
Target of image pick-up tubeInfo
- Publication number
- JPS5650035A JPS5650035A JP12590179A JP12590179A JPS5650035A JP S5650035 A JPS5650035 A JP S5650035A JP 12590179 A JP12590179 A JP 12590179A JP 12590179 A JP12590179 A JP 12590179A JP S5650035 A JPS5650035 A JP S5650035A
- Authority
- JP
- Japan
- Prior art keywords
- onto
- light transmitting
- silicon layer
- photoconductive film
- noncrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
- Light Receiving Elements (AREA)
- Non-Insulated Conductors (AREA)
Abstract
PURPOSE:To facilitate manufacture of a target and improve sensitivity, residual image characteristic, and baking characteristic by coating the photoconductive film consisting of the noncrystalline silicon layer in which a slight amount of acceptor impurities are doped, onto a light transmitting electrode. CONSTITUTION:Onto the inner surface of a light transmitting substratum, for example of a glass face plate 3, a transparent electrode 8 is coated which consists of the light transmitting electric conductive layer such as SnO2, (In1-XSnX)2O3, or noncrystalline silicon layer having low specific resistance. Onto the electrode 8, the noncrystalline silicon layer having low specific resistance in which a little amount of acceptor impurities are doped is coated as photoconductive film 9. Onto the photoconductive film 9, an electron beam landing layer 10 is formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12590179A JPS5650035A (en) | 1979-09-28 | 1979-09-28 | Target of image pick-up tube |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12590179A JPS5650035A (en) | 1979-09-28 | 1979-09-28 | Target of image pick-up tube |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5650035A true JPS5650035A (en) | 1981-05-07 |
JPS6340348B2 JPS6340348B2 (en) | 1988-08-10 |
Family
ID=14921704
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12590179A Granted JPS5650035A (en) | 1979-09-28 | 1979-09-28 | Target of image pick-up tube |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5650035A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5216990A (en) * | 1975-07-28 | 1977-02-08 | Rca Corp | Semiconductor device |
JPS54150995A (en) * | 1978-05-19 | 1979-11-27 | Hitachi Ltd | Photo detector |
-
1979
- 1979-09-28 JP JP12590179A patent/JPS5650035A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5216990A (en) * | 1975-07-28 | 1977-02-08 | Rca Corp | Semiconductor device |
JPS54150995A (en) * | 1978-05-19 | 1979-11-27 | Hitachi Ltd | Photo detector |
Also Published As
Publication number | Publication date |
---|---|
JPS6340348B2 (en) | 1988-08-10 |
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