JPS5650034A - Target of image pick-up tube - Google Patents
Target of image pick-up tubeInfo
- Publication number
- JPS5650034A JPS5650034A JP12590379A JP12590379A JPS5650034A JP S5650034 A JPS5650034 A JP S5650034A JP 12590379 A JP12590379 A JP 12590379A JP 12590379 A JP12590379 A JP 12590379A JP S5650034 A JPS5650034 A JP S5650034A
- Authority
- JP
- Japan
- Prior art keywords
- target
- noncrystalline silicon
- onto
- silicon layer
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Abstract
PURPOSE:To facilitate manufacture of a target and prevent the characteristics of the target film from being varied over a long period of time by constituting the light transmitting electrode from the noncrystalline silicon layer having a low specific resistance in which the impurities as donner are doped in high concentration. CONSTITUTION:Onto the inner surface of the light transmitting substratum, for example of a glass face plate 3, a transparent electrode 8 is coated which is made of noncrystalline silicon having low specific resistance in which donner impurities are doped in high concentration. Onto the electrode 8, a photoconductive film 9 for example noncrystalline silicon layer is deposited. Onto the photoconductive film 9, an electron beam landing layer 9 for example noncrystalline silicon layer is deposited.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12590379A JPS5650034A (en) | 1979-09-28 | 1979-09-28 | Target of image pick-up tube |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12590379A JPS5650034A (en) | 1979-09-28 | 1979-09-28 | Target of image pick-up tube |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5650034A true JPS5650034A (en) | 1981-05-07 |
Family
ID=14921753
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12590379A Pending JPS5650034A (en) | 1979-09-28 | 1979-09-28 | Target of image pick-up tube |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5650034A (en) |
-
1979
- 1979-09-28 JP JP12590379A patent/JPS5650034A/en active Pending
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