GB1001268A - Pin-hole evaporation camera - Google Patents

Pin-hole evaporation camera

Info

Publication number
GB1001268A
GB1001268A GB32870/61A GB3287061A GB1001268A GB 1001268 A GB1001268 A GB 1001268A GB 32870/61 A GB32870/61 A GB 32870/61A GB 3287061 A GB3287061 A GB 3287061A GB 1001268 A GB1001268 A GB 1001268A
Authority
GB
United Kingdom
Prior art keywords
antimony
layer
evaporated
vapour
oxysulphide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB32870/61A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of GB1001268A publication Critical patent/GB1001268A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/548—Controlling the composition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H01J9/233—Manufacture of photoelectric screens or charge-storage screens
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/064—Gp II-VI compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/158—Sputtering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Light Receiving Elements (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

<PICT:1001268/C6-C7/1> In a vapour deposition process for producing thin films such as photoconductive materials, e.g. oxides, sulphides and selenides of Sb, As, Pb and Cd or mixtures of these, the amount and composition of the coating is controlled by passing a portion of the vapour, simultaneously evaporated from two separate sources, through a single monitoring aperture so that the evaporated material from each source is deposited respectively on dfferent parts of a monitoring plate and the amount of the material deposited is then monitored. The process is applied to the production of a target electrode for a photoconductive pick up tube, the electrode consisting of a glass substrate 22, a tin oxide layer 20, and a graded composition 26 consisting of a layer 26a of antimony oxysulphide, a layer 26b of a mixture of antimony oxysulphide and antimony trisulphide and an outer layer 26c of antimony trisulphide (Fig. 2). In Fig. 4 (not shown) the coating material is evaporated from two boats in a vacuum chamber, the glass substrate 22, 22a coated with a film of tin oxide being supported in jig 29. The vapour is directed through an 0.07 inch aperture 32 on to a monitor plate 34 and the deposit is monitored optically by reflection of a light source 36 from the deposit and counting the number of interference rings formed.
GB32870/61A 1960-10-04 1961-09-13 Pin-hole evaporation camera Expired GB1001268A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US6043360A 1960-10-04 1960-10-04

Publications (1)

Publication Number Publication Date
GB1001268A true GB1001268A (en) 1965-08-11

Family

ID=22029447

Family Applications (1)

Application Number Title Priority Date Filing Date
GB32870/61A Expired GB1001268A (en) 1960-10-04 1961-09-13 Pin-hole evaporation camera

Country Status (3)

Country Link
US (1) US3127226A (en)
GB (1) GB1001268A (en)
NL (1) NL269855A (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3424610A (en) * 1965-10-14 1969-01-28 Us Air Force Vapor depositing infra-sensitive antimony tritelluride
US3620829A (en) * 1968-05-06 1971-11-16 Gen Motors Corp Coatings for germanium semiconductor devices
JPS53110973A (en) * 1977-03-10 1978-09-28 Futaba Denshi Kogyo Kk Method and apparatus for manufacturing compounds
NL7711772A (en) * 1977-10-27 1979-05-02 Philips Nv COLOR IMAGE TUBE AND METHOD FOR THE MANUFACTURE OF SUCH COLOR IMAGE TUBE.
US4508931A (en) * 1981-12-30 1985-04-02 Stauffer Chemical Company Catenated phosphorus materials, their preparation and use, and semiconductor and other devices employing them
US4620968A (en) * 1981-12-30 1986-11-04 Stauffer Chemical Company Monoclinic phosphorus formed from vapor in the presence of an alkali metal
GB2158843A (en) * 1984-05-14 1985-11-20 Philips Electronic Associated Method of manufacturing a semiconductor device by molecular beam epitaxy

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2733115A (en) * 1956-01-31 Apparatus for evaporating chemicals
US2391280A (en) * 1942-11-26 1945-12-18 Bell Telephone Labor Inc Method of forming layers for electronic cathodes
US2744808A (en) * 1952-08-27 1956-05-08 Rca Corp Apparatus for evaporating chemicals
US2906637A (en) * 1953-05-19 1959-09-29 Electronique Soc Gen Method of forming a film a short distance from a surface
DE1057845B (en) * 1954-03-10 1959-05-21 Licentia Gmbh Process for the production of monocrystalline semiconducting compounds
US2881042A (en) * 1955-02-18 1959-04-07 Rca Corp Composite photoconductive layer
US2871086A (en) * 1956-02-10 1959-01-27 Westinghouse Electric Corp Method for baking and exhausting electron discharge devices
US2871087A (en) * 1956-02-10 1959-01-27 Westinghouse Electric Corp Method of assembling a color television tube
NL224894A (en) * 1957-06-08

Also Published As

Publication number Publication date
NL269855A (en)
US3127226A (en) 1964-03-31

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