NL224894A - - Google Patents
Info
- Publication number
- NL224894A NL224894A NL224894DA NL224894A NL 224894 A NL224894 A NL 224894A NL 224894D A NL224894D A NL 224894DA NL 224894 A NL224894 A NL 224894A
- Authority
- NL
- Netherlands
- Prior art keywords
- compound
- temperature
- volatile
- elements
- indium arsenide
- Prior art date
Links
- 150000001875 compounds Chemical class 0.000 abstract 5
- 229910000673 Indium arsenide Inorganic materials 0.000 abstract 2
- 230000005494 condensation Effects 0.000 abstract 2
- 238000009833 condensation Methods 0.000 abstract 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 239000003039 volatile agent Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/049—Equivalence and options
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/158—Sputtering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/971—Stoichiometric control of host substrate composition
Abstract
A layer of a semi-conducting compound composed of two elements, e.g. indium arsenide, is produced by directing separate vaporous streams of the elements on to a surface maintained at a temperature above the condensation temperature of the more volatile <PICT:0852598/III/1> element and below the condensation temperature of the compound and the less volatile element, the more volatile compound being in excess. The surface may be maintained at a temperature of 200 DEG C. for the production of indium arsenide. The jets may be of varying density in cross-section, decreasing in density from the centre towards the periphery, and may partially overlap (as shown), thus ensuring a desirable region in which the compound is obtained pure. This region may be cut out. The resulting layer may be heated at a temperature just below the m.p. of the compound in the vapour of the more readily volatile element at a pressure less than the v.p. of the solid element and greater than the partial v.p. of the element over the compound.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES53828A DE1033335B (en) | 1957-06-08 | 1957-06-08 | Process for the production of thin semiconducting layers from semiconducting compounds |
Publications (1)
Publication Number | Publication Date |
---|---|
NL224894A true NL224894A (en) |
Family
ID=7489466
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL103088D NL103088C (en) | 1957-06-08 | ||
NL224894D NL224894A (en) | 1957-06-08 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL103088D NL103088C (en) | 1957-06-08 |
Country Status (5)
Country | Link |
---|---|
US (1) | US2938816A (en) |
DE (1) | DE1033335B (en) |
FR (1) | FR1194877A (en) |
GB (1) | GB852598A (en) |
NL (2) | NL224894A (en) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3082124A (en) * | 1959-08-03 | 1963-03-19 | Beckman Instruments Inc | Method of making thin layer semiconductor devices |
NL121550C (en) * | 1959-12-11 | |||
US3245674A (en) * | 1960-04-25 | 1966-04-12 | Nat Res Corp | Crucible coated with reaction product of aluminum and boron nitride coating |
DE1211593B (en) * | 1960-04-27 | 1966-03-03 | Wacker Chemie Gmbh | Process for the crucible-free production of high-purity, electrically semiconducting, crystalline compounds |
US3127226A (en) * | 1960-10-04 | 1964-03-31 | Pin-hole evaporation camera | |
US3101280A (en) * | 1961-04-05 | 1963-08-20 | Ibm | Method of preparing indium antimonide films |
US3152006A (en) * | 1961-06-29 | 1964-10-06 | High Temperature Materials Inc | Boron nitride coating and a process of producing the same |
NL293415A (en) * | 1962-05-31 | |||
US3211128A (en) * | 1962-05-31 | 1965-10-12 | Roy F Potter | Vacuum evaporator apparatus |
US3301637A (en) * | 1962-12-27 | 1967-01-31 | Ibm | Method for the synthesis of gallium phosphide |
US3429295A (en) * | 1963-09-17 | 1969-02-25 | Nuclear Materials & Equipment | Apparatus for producing vapor coated particles |
US3388002A (en) * | 1964-08-06 | 1968-06-11 | Bell Telephone Labor Inc | Method of forming a piezoelectric ultrasonic transducer |
US3303067A (en) * | 1963-12-26 | 1967-02-07 | Ibm | Method of fabricating thin film transistor devices |
US3341364A (en) * | 1964-07-27 | 1967-09-12 | David A Collins | Preparation of thin film indium antimonide from bulk indium antimonide |
US3958931A (en) * | 1965-03-18 | 1976-05-25 | Ciba-Geigy Ag | Wool dyeing with epihalohydrin or chloroacetamide quarternized polyglycolamine assisted dye solution |
US3433682A (en) * | 1965-07-06 | 1969-03-18 | American Standard Inc | Silicon coated graphite |
US3469978A (en) * | 1965-11-30 | 1969-09-30 | Xerox Corp | Photosensitive element |
US3531335A (en) * | 1966-05-09 | 1970-09-29 | Kewanee Oil Co | Method of preparing films of controlled resistivity |
FR95985E (en) * | 1966-05-16 | 1972-05-19 | Rank Xerox Ltd | Glassy semiconductors and their manufacturing process in the form of thin films. |
US3520716A (en) * | 1966-06-07 | 1970-07-14 | Tokyo Shibaura Electric Co | Method of vapor depositing multicomponent film |
US3480484A (en) * | 1966-06-28 | 1969-11-25 | Loral Corp | Method for preparing high mobility indium antimonide thin films |
US3476593A (en) * | 1967-01-24 | 1969-11-04 | Fairchild Camera Instr Co | Method of forming gallium arsenide films by vacuum deposition techniques |
US3492509A (en) * | 1967-07-24 | 1970-01-27 | Bell Telephone Labor Inc | Piezoelectric ultrasonic transducers |
US3619283A (en) * | 1968-09-27 | 1971-11-09 | Ibm | Method for epitaxially growing thin films |
US3603285A (en) * | 1968-11-05 | 1971-09-07 | Massachusetts Inst Technology | Vapor deposition apparatus |
US3632439A (en) * | 1969-04-25 | 1972-01-04 | Westinghouse Electric Corp | Method of forming thin insulating films particularly for piezoelectric transducer |
US3865625A (en) * | 1972-10-13 | 1975-02-11 | Bell Telephone Labor Inc | Molecular beam epitaxy shadowing technique for fabricating dielectric optical waveguides |
DE2317797B2 (en) * | 1973-04-09 | 1979-12-06 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Process for the production of gallium phosphide |
DE2358859C3 (en) * | 1973-11-26 | 1981-08-06 | Robert Bosch Gmbh, 7000 Stuttgart | Record carriers for the optical recording of information by means of sequential signals |
US4094269A (en) * | 1974-06-14 | 1978-06-13 | Zlafop Pri Ban | Vapor deposition apparatus for coating continuously moving substrates with layers of volatizable solid substances |
SE393967B (en) * | 1974-11-29 | 1977-05-31 | Sateko Oy | PROCEDURE AND PERFORMANCE OF LAYING BETWEEN THE STORAGE IN A LABOR PACKAGE |
US4091138A (en) * | 1975-02-12 | 1978-05-23 | Sumitomo Bakelite Company Limited | Insulating film, sheet, or plate material with metallic coating and method for manufacturing same |
GB1528192A (en) * | 1975-03-10 | 1978-10-11 | Secr Defence | Surface treatment of iii-v compound crystals |
CA1055819A (en) * | 1975-06-20 | 1979-06-05 | Roelof P. Bult | Stabilization of aluminum arsenide |
JPS5331106A (en) * | 1976-09-03 | 1978-03-24 | Hitachi Ltd | Information recording member |
JPS5399762A (en) * | 1977-02-12 | 1978-08-31 | Futaba Denshi Kogyo Kk | Device for producing compound semiconductor film |
US4177298A (en) * | 1977-03-22 | 1979-12-04 | Hitachi, Ltd. | Method for producing an InSb thin film element |
CH626407A5 (en) * | 1977-07-08 | 1981-11-13 | Balzers Hochvakuum | |
US4513031A (en) * | 1983-09-09 | 1985-04-23 | Xerox Corporation | Process for forming alloy layer |
US4523051A (en) * | 1983-09-27 | 1985-06-11 | The Boeing Company | Thin films of mixed metal compounds |
CN102452646B (en) | 2010-10-26 | 2013-10-09 | 清华大学 | Method for preparing hydrophilic carbon nanotube film |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2759861A (en) * | 1954-09-22 | 1956-08-21 | Bell Telephone Labor Inc | Process of making photoconductive compounds |
-
0
- NL NL103088D patent/NL103088C/xx active
- NL NL224894D patent/NL224894A/xx unknown
-
1957
- 1957-06-08 DE DES53828A patent/DE1033335B/en active Pending
-
1958
- 1958-04-18 FR FR1194877D patent/FR1194877A/en not_active Expired
- 1958-05-30 GB GB17370/58A patent/GB852598A/en not_active Expired
- 1958-06-03 US US739577A patent/US2938816A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
GB852598A (en) | 1960-10-26 |
US2938816A (en) | 1960-05-31 |
DE1033335B (en) | 1958-07-03 |
NL103088C (en) | |
FR1194877A (en) | 1959-11-13 |
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