JPS5498190A - Preparation of photoconductive target - Google Patents

Preparation of photoconductive target

Info

Publication number
JPS5498190A
JPS5498190A JP428678A JP428678A JPS5498190A JP S5498190 A JPS5498190 A JP S5498190A JP 428678 A JP428678 A JP 428678A JP 428678 A JP428678 A JP 428678A JP S5498190 A JPS5498190 A JP S5498190A
Authority
JP
Japan
Prior art keywords
membrane
photoconductive
target
selenic
cadmium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP428678A
Other languages
Japanese (ja)
Inventor
Okio Yoshida
Yoshiaki Hayashimoto
Isao Nagae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP428678A priority Critical patent/JPS5498190A/en
Publication of JPS5498190A publication Critical patent/JPS5498190A/en
Pending legal-status Critical Current

Links

Landscapes

  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To prepare an infrared ray sensitive photoconductive target by providing compound targets on photoconductive membrane consisting of high resistance membranes which do not photoelectricconvert against the incident consisting of arsenic trisulfide.
CONSTITUTION: Vacuum deposit I-X group compound, for example selenic cadmium, to transparent photoconductive membrane 2 on light transmissive glass face plate 1 and form selenic cadmium sintered membrane by the fist sintering treat ment. Then, process this sintered membrane by the second sintering treatment within the specified temperature in the stmosphere consisting mainly of inert gases such as argan, nitrogen, etc. containing tellurium vapor, thus forming photoconductive membrane 3. High resistance membrane 4 not photoelectricconverting against the incident light made up of arsenic trisulfide is formed on this membrane 3, thus providing compound target 5 and obtaining photoconductive target with infrared ray sensitivity.
COPYRIGHT: (C)1979,JPO&Japio
JP428678A 1978-01-20 1978-01-20 Preparation of photoconductive target Pending JPS5498190A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP428678A JPS5498190A (en) 1978-01-20 1978-01-20 Preparation of photoconductive target

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP428678A JPS5498190A (en) 1978-01-20 1978-01-20 Preparation of photoconductive target

Publications (1)

Publication Number Publication Date
JPS5498190A true JPS5498190A (en) 1979-08-02

Family

ID=11580279

Family Applications (1)

Application Number Title Priority Date Filing Date
JP428678A Pending JPS5498190A (en) 1978-01-20 1978-01-20 Preparation of photoconductive target

Country Status (1)

Country Link
JP (1) JPS5498190A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57208032A (en) * 1981-06-16 1982-12-21 Toshiba Corp Manufacture of target for image pickup tube
JPS58216341A (en) * 1982-06-08 1983-12-16 Toshiba Corp Photoconductive target for camera tube

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57208032A (en) * 1981-06-16 1982-12-21 Toshiba Corp Manufacture of target for image pickup tube
JPH0261089B2 (en) * 1981-06-16 1990-12-19 Tokyo Shibaura Electric Co
JPS58216341A (en) * 1982-06-08 1983-12-16 Toshiba Corp Photoconductive target for camera tube
JPS6335059B2 (en) * 1982-06-08 1988-07-13 Tokyo Shibaura Electric Co

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