JPS5654174A - Solidstate image sensor - Google Patents

Solidstate image sensor

Info

Publication number
JPS5654174A
JPS5654174A JP13068679A JP13068679A JPS5654174A JP S5654174 A JPS5654174 A JP S5654174A JP 13068679 A JP13068679 A JP 13068679A JP 13068679 A JP13068679 A JP 13068679A JP S5654174 A JPS5654174 A JP S5654174A
Authority
JP
Japan
Prior art keywords
light
channel stopper
ccd1
shield section
light shield
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13068679A
Other languages
Japanese (ja)
Inventor
Hiroo Takemura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13068679A priority Critical patent/JPS5654174A/en
Publication of JPS5654174A publication Critical patent/JPS5654174A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers

Abstract

PURPOSE:To obtain the picture high in resolution and sharp, by intercepting the incident light with the light shield section provided in accordance with the channel stopper on a transparent board. CONSTITUTION:The light shield section 6 is formed by etching the metal layer formed on the glass material as the board 5 with vapor deposition, e.g., chromium oxide, according to the channel stopper 2 of the CCD1, in the shape of stripe. The light incident on the light shield section 6 does not reach the channel stopper 2 of the CCD1 but intercepted on the way of light path. Accordingly, no electric charge due to photoelectric conversion is not produced at the channel stopper 2 and only the electric charges produced from the incident light on the picture element 4 can be collected to each picture element 4 of the CCD1.
JP13068679A 1979-10-09 1979-10-09 Solidstate image sensor Pending JPS5654174A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13068679A JPS5654174A (en) 1979-10-09 1979-10-09 Solidstate image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13068679A JPS5654174A (en) 1979-10-09 1979-10-09 Solidstate image sensor

Publications (1)

Publication Number Publication Date
JPS5654174A true JPS5654174A (en) 1981-05-14

Family

ID=15040186

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13068679A Pending JPS5654174A (en) 1979-10-09 1979-10-09 Solidstate image sensor

Country Status (1)

Country Link
JP (1) JPS5654174A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59139670A (en) * 1983-01-31 1984-08-10 Nec Corp Solid-state image pickup element
JPS63312671A (en) * 1987-06-15 1988-12-21 Nec Corp Charge transfer image sensor
JPH01130562A (en) * 1987-11-17 1989-05-23 Texas Instr Japan Ltd Charge-coupled device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5384414A (en) * 1976-12-29 1978-07-25 Matsushita Electric Ind Co Ltd Manufacture of solid state pickup device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5384414A (en) * 1976-12-29 1978-07-25 Matsushita Electric Ind Co Ltd Manufacture of solid state pickup device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59139670A (en) * 1983-01-31 1984-08-10 Nec Corp Solid-state image pickup element
JPS63312671A (en) * 1987-06-15 1988-12-21 Nec Corp Charge transfer image sensor
JPH01130562A (en) * 1987-11-17 1989-05-23 Texas Instr Japan Ltd Charge-coupled device

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