NL7611523A - Vervaardigen van halfgeleiderinrichting. - Google Patents

Vervaardigen van halfgeleiderinrichting.

Info

Publication number
NL7611523A
NL7611523A NL7611523A NL7611523A NL7611523A NL 7611523 A NL7611523 A NL 7611523A NL 7611523 A NL7611523 A NL 7611523A NL 7611523 A NL7611523 A NL 7611523A NL 7611523 A NL7611523 A NL 7611523A
Authority
NL
Netherlands
Prior art keywords
semi
manufacture
conductor device
conductor
Prior art date
Application number
NL7611523A
Other languages
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of NL7611523A publication Critical patent/NL7611523A/nl

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching
    • H01L21/30608Anisotropic liquid etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/973Substrate orientation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Element Separation (AREA)
NL7611523A 1975-11-24 1976-10-19 Vervaardigen van halfgeleiderinrichting. NL7611523A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/634,571 US3998674A (en) 1975-11-24 1975-11-24 Method for forming recessed regions of thermally oxidized silicon and structures thereof utilizing anisotropic etching

Publications (1)

Publication Number Publication Date
NL7611523A true NL7611523A (nl) 1977-04-26

Family

ID=24544344

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7611523A NL7611523A (nl) 1975-11-24 1976-10-19 Vervaardigen van halfgeleiderinrichting.

Country Status (8)

Country Link
US (1) US3998674A (nl)
JP (1) JPS5264884A (nl)
CA (1) CA1049156A (nl)
DE (1) DE2651423A1 (nl)
FR (1) FR2332618A1 (nl)
GB (1) GB1497199A (nl)
IT (1) IT1077022B (nl)
NL (1) NL7611523A (nl)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4096619A (en) * 1977-01-31 1978-06-27 International Telephone & Telegraph Corporation Semiconductor scribing method
US4278987A (en) * 1977-10-17 1981-07-14 Hitachi, Ltd. Junction isolated IC with thick EPI portion having sides at least 20 degrees from (110) orientations
FR2408914A1 (fr) * 1977-11-14 1979-06-08 Radiotechnique Compelec Dispositif semi-conducteur monolithique comprenant deux transistors complementaires et son procede de fabrication
US4118250A (en) * 1977-12-30 1978-10-03 International Business Machines Corporation Process for producing integrated circuit devices by ion implantation
JPS60253268A (ja) * 1984-05-29 1985-12-13 Meidensha Electric Mfg Co Ltd 半導体装置
JPS6156446A (ja) * 1984-08-28 1986-03-22 Toshiba Corp 半導体装置およびその製造方法
JP3031117B2 (ja) * 1993-06-02 2000-04-10 日産自動車株式会社 半導体装置の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3728166A (en) * 1967-01-11 1973-04-17 Ibm Semiconductor device fabrication method and product thereby
JPS507909B1 (nl) * 1969-08-04 1975-03-31
JPS4844830B1 (nl) * 1969-08-21 1973-12-27 Tokyo Shibaura Electric Co
DE2120388A1 (de) * 1970-04-28 1971-12-16 Agency Ind Science Techn Verbindungshalbleitervorrichtung
US3765969A (en) * 1970-07-13 1973-10-16 Bell Telephone Labor Inc Precision etching of semiconductors
US3810796A (en) * 1972-08-31 1974-05-14 Texas Instruments Inc Method of forming dielectrically isolated silicon diode array vidicon target
US3883948A (en) * 1974-01-02 1975-05-20 Signetics Corp Semiconductor structure and method

Also Published As

Publication number Publication date
FR2332618B1 (nl) 1978-06-30
DE2651423A1 (de) 1977-05-26
GB1497199A (en) 1978-01-05
JPS5419755B2 (nl) 1979-07-17
CA1049156A (en) 1979-02-20
JPS5264884A (en) 1977-05-28
FR2332618A1 (fr) 1977-06-17
US3998674A (en) 1976-12-21
IT1077022B (it) 1985-04-27

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Legal Events

Date Code Title Description
BV The patent application has lapsed