SE7601541L - Halvledarlikriktare - Google Patents
HalvledarlikriktareInfo
- Publication number
- SE7601541L SE7601541L SE7601541A SE7601541A SE7601541L SE 7601541 L SE7601541 L SE 7601541L SE 7601541 A SE7601541 A SE 7601541A SE 7601541 A SE7601541 A SE 7601541A SE 7601541 L SE7601541 L SE 7601541L
- Authority
- SE
- Sweden
- Prior art keywords
- rights
- semiconductor
- semiconductor rights
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/914—Polysilicon containing oxygen, nitrogen, or carbon, e.g. sipos
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
- Rectifiers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2506102A DE2506102C3 (de) | 1975-02-13 | 1975-02-13 | Halbleitergleichrichter |
Publications (2)
Publication Number | Publication Date |
---|---|
SE7601541L true SE7601541L (sv) | 1976-08-16 |
SE414246B SE414246B (sv) | 1980-07-14 |
Family
ID=5938817
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7601541A SE414246B (sv) | 1975-02-13 | 1976-02-11 | Halvledardiod |
Country Status (7)
Country | Link |
---|---|
US (1) | US4074303A (sv) |
JP (1) | JPS51107071A (sv) |
CA (1) | CA1049661A (sv) |
DE (1) | DE2506102C3 (sv) |
FR (1) | FR2301097A1 (sv) |
GB (1) | GB1484218A (sv) |
SE (1) | SE414246B (sv) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2050694B (en) * | 1979-05-07 | 1983-09-28 | Nippon Telegraph & Telephone | Electrode structure for a semiconductor device |
IT1212767B (it) * | 1983-07-29 | 1989-11-30 | Ates Componenti Elettron | Soppressore di sovratensioni a semiconduttore con tensione d'innesco predeterminabile con precisione. |
DE3631136A1 (de) * | 1986-09-12 | 1988-03-24 | Siemens Ag | Diode mit weichem abrissverhalten |
DE3939324A1 (de) * | 1989-11-28 | 1991-05-29 | Eupec Gmbh & Co Kg | Leistungs-halbleiterbauelement mit emitterkurzschluessen |
DE19843893A1 (de) * | 1998-09-24 | 2000-04-06 | Siemens Ag | Leistungshalbleiterdiode |
DE102004044141A1 (de) * | 2004-09-13 | 2006-03-30 | Robert Bosch Gmbh | Halbleiteranordnung zur Spannungsbegrenzung |
US9385181B2 (en) | 2014-01-23 | 2016-07-05 | Infineon Technologies Ag | Semiconductor diode and method of manufacturing a semiconductor diode |
CN104659081A (zh) * | 2015-03-09 | 2015-05-27 | 江苏中科君芯科技有限公司 | 改善恢复耐量的二极管结构 |
US11127737B2 (en) * | 2019-02-12 | 2021-09-21 | Macom Technology Solutions Holdings, Inc. | Monolithic multi-I region diode limiters |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2971139A (en) * | 1959-06-16 | 1961-02-07 | Fairchild Semiconductor | Semiconductor switching device |
US3249831A (en) * | 1963-01-04 | 1966-05-03 | Westinghouse Electric Corp | Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient |
US3331000A (en) * | 1963-10-18 | 1967-07-11 | Gen Electric | Gate turn off semiconductor switch having a composite gate region with different impurity concentrations |
US3476992A (en) * | 1967-12-26 | 1969-11-04 | Westinghouse Electric Corp | Geometry of shorted-cathode-emitter for low and high power thyristor |
US3599061A (en) * | 1969-09-30 | 1971-08-10 | Usa | Scr emitter short patterns |
JPS4918279A (sv) * | 1972-06-08 | 1974-02-18 | ||
JPS4940391A (sv) * | 1972-08-28 | 1974-04-15 |
-
1975
- 1975-02-13 DE DE2506102A patent/DE2506102C3/de not_active Expired
- 1975-10-30 GB GB44795/75A patent/GB1484218A/en not_active Expired
- 1975-12-23 CA CA242,417A patent/CA1049661A/en not_active Expired
-
1976
- 1976-01-20 US US05/650,626 patent/US4074303A/en not_active Expired - Lifetime
- 1976-02-09 FR FR7603425A patent/FR2301097A1/fr active Granted
- 1976-02-11 SE SE7601541A patent/SE414246B/sv unknown
- 1976-02-13 JP JP51014762A patent/JPS51107071A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
SE414246B (sv) | 1980-07-14 |
DE2506102B2 (de) | 1981-07-02 |
JPS51107071A (sv) | 1976-09-22 |
CA1049661A (en) | 1979-02-27 |
FR2301097A1 (fr) | 1976-09-10 |
US4074303A (en) | 1978-02-14 |
DE2506102A1 (de) | 1976-08-26 |
FR2301097B3 (sv) | 1979-10-12 |
DE2506102C3 (de) | 1982-03-25 |
GB1484218A (en) | 1977-09-01 |
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