JPS56133883A - Photoelectric transducer - Google Patents

Photoelectric transducer

Info

Publication number
JPS56133883A
JPS56133883A JP3806180A JP3806180A JPS56133883A JP S56133883 A JPS56133883 A JP S56133883A JP 3806180 A JP3806180 A JP 3806180A JP 3806180 A JP3806180 A JP 3806180A JP S56133883 A JPS56133883 A JP S56133883A
Authority
JP
Japan
Prior art keywords
semiconductor layer
type
type semiconductor
photoelectric
bonded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3806180A
Other languages
Japanese (ja)
Inventor
Yoshihiro Hamakawa
Hiroaki Okamoto
Nobuhiko Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SEISAN GIJUTSU SHINKO KYOKAI
SEISAN GIJUTSU SHINKOU KIYOUKA
Original Assignee
SEISAN GIJUTSU SHINKO KYOKAI
SEISAN GIJUTSU SHINKOU KIYOUKA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SEISAN GIJUTSU SHINKO KYOKAI, SEISAN GIJUTSU SHINKOU KIYOUKA filed Critical SEISAN GIJUTSU SHINKO KYOKAI
Priority to JP3806180A priority Critical patent/JPS56133883A/en
Publication of JPS56133883A publication Critical patent/JPS56133883A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/043—Mechanically stacked PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To improve the optoelectro energy conversion efficiency of a photoelectric transducer by repeatedly piling P type and N type semiconductors and photoelectric semiconductor materials in a specific order. CONSTITUTION:A photoelectric semiconductor layer 7 is bonded between the first P type and N type semiconductor layers 1 and 4, and a photoelectric semiconductor layer 8 is bonded between the first N tupe semiconductor layer 4 and the second P type semiconductor layer 2. Then, photoelectric semiconductor layers 9, 10 and 11 are successively bonded between the second P type semiconductor layer 2 and the second N type semiconductor layer 5, the second N type semiconductor layer 5 and the third P type semiconductor layer 3, and the third P type semiconductor layer 3 and the third N type semiconductor layer 6, respectively, to form multilayer films. In addition, layers are moreover formed by repeating such order.
JP3806180A 1980-03-24 1980-03-24 Photoelectric transducer Pending JPS56133883A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3806180A JPS56133883A (en) 1980-03-24 1980-03-24 Photoelectric transducer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3806180A JPS56133883A (en) 1980-03-24 1980-03-24 Photoelectric transducer

Publications (1)

Publication Number Publication Date
JPS56133883A true JPS56133883A (en) 1981-10-20

Family

ID=12514976

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3806180A Pending JPS56133883A (en) 1980-03-24 1980-03-24 Photoelectric transducer

Country Status (1)

Country Link
JP (1) JPS56133883A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58116781A (en) * 1981-12-29 1983-07-12 Sanyo Electric Co Ltd Photosensitive device
JPS58191479A (en) * 1982-04-30 1983-11-08 Kanegafuchi Chem Ind Co Ltd Photoelectric element and method for photo detection using thereof
JPS5927581A (en) * 1982-08-03 1984-02-14 Seisan Gijutsu Shinko Kyokai Optical sensor
JPS6127686A (en) * 1984-07-17 1986-02-07 Res Dev Corp Of Japan Light receiving element having superlattice of amorphous semiconductor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5125088A (en) * 1974-08-26 1976-03-01 Hitachi Ltd
JPS5216990A (en) * 1975-07-28 1977-02-08 Rca Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5125088A (en) * 1974-08-26 1976-03-01 Hitachi Ltd
JPS5216990A (en) * 1975-07-28 1977-02-08 Rca Corp Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58116781A (en) * 1981-12-29 1983-07-12 Sanyo Electric Co Ltd Photosensitive device
JPS58191479A (en) * 1982-04-30 1983-11-08 Kanegafuchi Chem Ind Co Ltd Photoelectric element and method for photo detection using thereof
JPS5927581A (en) * 1982-08-03 1984-02-14 Seisan Gijutsu Shinko Kyokai Optical sensor
JPS6127686A (en) * 1984-07-17 1986-02-07 Res Dev Corp Of Japan Light receiving element having superlattice of amorphous semiconductor

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