IN2015DN02321A - - Google Patents
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- Publication number
- IN2015DN02321A IN2015DN02321A IN2321DEN2015A IN2015DN02321A IN 2015DN02321 A IN2015DN02321 A IN 2015DN02321A IN 2321DEN2015 A IN2321DEN2015 A IN 2321DEN2015A IN 2015DN02321 A IN2015DN02321 A IN 2015DN02321A
- Authority
- IN
- India
- Prior art keywords
- composition
- cigs
- substrate
- sensors
- layer
- Prior art date
Links
- 239000000758 substrate Substances 0.000 abstract 4
- 239000010949 copper Substances 0.000 abstract 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052802 copper Inorganic materials 0.000 abstract 2
- 230000002950 deficient Effects 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 230000007704 transition Effects 0.000 abstract 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- 238000010549 co-Evaporation Methods 0.000 abstract 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000005137 deposition process Methods 0.000 abstract 1
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 abstract 1
- 230000004907 flux Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/548—Controlling the composition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electromagnetism (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE0400582A SE0400582D0 (sv) | 2004-03-05 | 2004-03-05 | Method for in-line process control of the CIGS process |
PCT/SE2005/000333 WO2005086238A1 (en) | 2004-03-05 | 2005-03-04 | Method and apparatus for in-line process control of the cigs process |
Publications (1)
Publication Number | Publication Date |
---|---|
IN2015DN02321A true IN2015DN02321A (ko) | 2015-08-28 |
Family
ID=32067349
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IN2321DEN2015 IN2015DN02321A (ko) | 2004-03-05 | 2005-03-04 |
Country Status (9)
Country | Link |
---|---|
US (2) | US9142705B2 (ko) |
EP (1) | EP1721339B1 (ko) |
JP (1) | JP5020062B2 (ko) |
KR (1) | KR101143104B1 (ko) |
CN (2) | CN101599515B (ko) |
AU (1) | AU2005219926B2 (ko) |
IN (1) | IN2015DN02321A (ko) |
SE (1) | SE0400582D0 (ko) |
WO (1) | WO2005086238A1 (ko) |
Families Citing this family (82)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070227633A1 (en) * | 2006-04-04 | 2007-10-04 | Basol Bulent M | Composition control for roll-to-roll processed photovoltaic films |
US7736913B2 (en) * | 2006-04-04 | 2010-06-15 | Solopower, Inc. | Composition control for photovoltaic thin film manufacturing |
JP2008210786A (ja) | 2007-02-01 | 2008-09-11 | Matsushita Electric Ind Co Ltd | 電池とその負極の検査方法、製造方法、負極の検査装置、製造装置 |
US8465589B1 (en) | 2009-02-05 | 2013-06-18 | Ascent Solar Technologies, Inc. | Machine and process for sequential multi-sublayer deposition of copper indium gallium diselenide compound semiconductors |
EP2205772A2 (en) * | 2007-09-11 | 2010-07-14 | Centrotherm Photovoltaics AG | Method and arrangement for providing chalcogens |
HUE052503T2 (hu) | 2007-09-12 | 2021-05-28 | Flisom Ag | Berendezés kompozit film gyártására |
JP2009267337A (ja) | 2007-09-28 | 2009-11-12 | Fujifilm Corp | 太陽電池 |
JP4974986B2 (ja) | 2007-09-28 | 2012-07-11 | 富士フイルム株式会社 | 太陽電池用基板および太陽電池 |
WO2009041660A1 (ja) | 2007-09-28 | 2009-04-02 | Fujifilm Corporation | 太陽電池用基板および太陽電池 |
JP5046882B2 (ja) * | 2007-11-21 | 2012-10-10 | 三菱重工業株式会社 | インライン式成膜装置 |
KR100964946B1 (ko) * | 2008-02-21 | 2010-06-21 | (주)알파플러스 | 양면가열히터를 갖는 태양전지의 광흡수층 박막 형성 장치 |
EP2257970A4 (en) | 2008-03-05 | 2015-09-02 | Hanergy Hi Tech Power Hk Ltd | BUFFER LAYER DEPOSITION FOR THIN FILM SOLAR CELLS |
US20100087015A1 (en) | 2008-03-05 | 2010-04-08 | Global Solar Energy, Inc. | Feedback for buffer layer deposition |
WO2009111052A1 (en) * | 2008-03-05 | 2009-09-11 | Global Solar Energy, Inc. | Heating for buffer layer deposition |
EP2291855B1 (en) | 2008-04-15 | 2018-06-27 | Global Solar Energy, Inc. | Apparatus for manufacturing thin-film solar cells |
US9127349B2 (en) * | 2008-12-23 | 2015-09-08 | Applied Materials, Inc. | Method and apparatus for depositing mixed layers |
EP2204467B1 (en) * | 2008-12-23 | 2014-05-07 | Applied Materials, Inc. | Method and apparatus for depositing mixed layers |
TWI509107B (zh) * | 2009-03-06 | 2015-11-21 | Centrotherm Photovoltaics Ag | 利用氧族元素源將金屬先驅物薄膜熱轉變成半導體薄膜之方法及裝置 |
KR101044772B1 (ko) * | 2009-03-30 | 2011-06-27 | (주)텔리오솔라코리아 | 대면적 하향식 cigs 고속성막공정 시스템 및 방법 |
US20100267191A1 (en) * | 2009-04-20 | 2010-10-21 | Applied Materials, Inc. | Plasma enhanced thermal evaporator |
JP2011060866A (ja) * | 2009-09-07 | 2011-03-24 | Optorun Co Ltd | 多元素同時レートモニターシステム、多元素同時レートモニター方法、成膜装置及び成膜方法 |
JP5543159B2 (ja) * | 2009-09-07 | 2014-07-09 | 株式会社オプトラン | リニア蒸着源とその使用方法、成膜装置並びに成膜方法 |
JP5354289B2 (ja) * | 2009-10-02 | 2013-11-27 | 株式会社明電舎 | 製膜方法及び製膜装置 |
KR101271753B1 (ko) * | 2009-11-20 | 2013-06-05 | 한국전자통신연구원 | 박막형 광 흡수층의 제조 방법, 이를 이용한 박막 태양전지 제조 방법 및 박막 태양전지 |
US8481355B2 (en) | 2009-12-15 | 2013-07-09 | Primestar Solar, Inc. | Modular system and process for continuous deposition of a thin film layer on a substrate |
US8247255B2 (en) * | 2009-12-15 | 2012-08-21 | PrimeStar, Inc. | Modular system and process for continuous deposition of a thin film layer on a substrate |
WO2011082179A1 (en) * | 2009-12-28 | 2011-07-07 | Global Solar Energy, Inc. | Apparatus and methods of mixing and depositing thin film photovoltaic compositions |
JP2012046780A (ja) * | 2010-08-25 | 2012-03-08 | Tokyo Electron Ltd | 蒸着処理装置および蒸着処理方法 |
JP5465136B2 (ja) * | 2010-08-31 | 2014-04-09 | 富士フイルム株式会社 | 蒸着フラックス測定装置および真空蒸着装置 |
KR20120038632A (ko) | 2010-10-14 | 2012-04-24 | 삼성전자주식회사 | 태양 전지의 제조 방법 |
US20120190180A1 (en) * | 2011-01-24 | 2012-07-26 | Lobue Joseph D | Thin film crystallization device and method for making a polycrystalline composition |
US8298849B2 (en) * | 2011-01-31 | 2012-10-30 | Intermolecular, Inc. | Nitrogen reactive sputtering of Cu-In-Ga-N for solar cells |
JP5456711B2 (ja) * | 2011-03-03 | 2014-04-02 | 住友重機械工業株式会社 | 成膜装置 |
KR101274290B1 (ko) | 2011-05-03 | 2013-06-13 | 영남대학교 산학협력단 | 샘플홀더, 상기 샘플홀더를 이용한 ht―xrd 시스템 및 상기 ht―xrd 시스템을 이용한 cigss 전구체의 셀렌화 및 설퍼화 반응의 실시간 ht―xrd 측정방법 |
CN102496565B (zh) * | 2011-12-23 | 2016-08-24 | 中国电子科技集团公司第十八研究所 | 柔性衬底上卷对卷沉积吸收层用装置 |
CN102492923B (zh) * | 2011-12-23 | 2016-01-20 | 中国电子科技集团公司第十八研究所 | 柔性衬底上卷对卷在线控制沉积吸收层的方法 |
KR101281052B1 (ko) | 2012-02-07 | 2013-07-09 | 한국에너지기술연구원 | 간소화된 동시진공증발법을 이용한 태양전지용 cigs 박막의 제조방법 및 그 제조방법에 따라 제조된 태양전지용 cigs 박막 |
KR101698659B1 (ko) * | 2012-06-20 | 2017-01-20 | 쌩-고벵 글래스 프랑스 | 박막 태양 전지를 위한 층 시스템 |
KR101353033B1 (ko) * | 2012-06-21 | 2014-01-23 | 주성엔지니어링(주) | 박막형 태양전지 제조장치 및 이에 이용되는 버퍼 챔버 |
KR101369166B1 (ko) * | 2012-07-13 | 2014-03-24 | 한국에너지기술연구원 | 태양전지용 cigs 광흡수층 형성 방법 및 cigs 태양전지 |
KR101407012B1 (ko) | 2012-07-23 | 2014-06-17 | 지제이엠 주식회사 | Cigs 박막제조 장치 및 방법 |
KR101349475B1 (ko) * | 2012-07-27 | 2014-01-10 | 엘지이노텍 주식회사 | 태양전지 제조 장치 및 태양전지 제조 방법 |
CN102877031A (zh) * | 2012-10-26 | 2013-01-16 | 四川大学 | 一种大面积共蒸发源的阵列设计 |
JP2014090014A (ja) * | 2012-10-29 | 2014-05-15 | Fujifilm Corp | 化合物薄膜成膜方法及び化合物薄膜成膜装置 |
CN102925864B (zh) * | 2012-11-19 | 2014-07-16 | 深圳先进技术研究院 | 蒸发镀膜装置及获得其源炉的工作温度的方法 |
US20140256082A1 (en) * | 2013-03-07 | 2014-09-11 | Jehad A. Abushama | Method and apparatus for the formation of copper-indiumgallium selenide thin films using three dimensional selective rf and microwave rapid thermal processing |
CN103346194B (zh) * | 2013-06-18 | 2015-11-18 | 天津理工大学 | 一种铜铟镓硒太阳电池器件及其制备方法 |
KR101649396B1 (ko) | 2013-09-17 | 2016-08-31 | 전남대학교산학협력단 | 화학 수조 증착법을 이용한 czts 기반 박막 제조방법 |
CN103474381B (zh) * | 2013-09-22 | 2016-04-20 | 上海华力微电子有限公司 | 利用温度差异监测晶片在高温腔体的位置偏差的方法 |
CN103710668B (zh) * | 2013-12-12 | 2015-09-16 | 深圳先进技术研究院 | 铜铟镓硒薄膜的制备方法 |
KR102193150B1 (ko) * | 2013-12-27 | 2020-12-21 | 삼성디스플레이 주식회사 | 증착 장치 및 이를 이용한 증착량 제어 방법 |
US9870935B2 (en) | 2014-12-19 | 2018-01-16 | Applied Materials, Inc. | Monitoring system for deposition and method of operation thereof |
CN105812087B (zh) * | 2014-12-30 | 2019-09-24 | 中兴通讯股份有限公司 | 一种无线通信网络中数据传输方法和装置 |
US9513756B1 (en) * | 2015-08-28 | 2016-12-06 | Clover Network, Inc. | Providing near field communication through a touch screen |
US20170269778A1 (en) * | 2016-03-15 | 2017-09-21 | Synaptics Incorporated | Frequency shifting techniques for concurrent display driving and touch sensing |
US11183605B2 (en) | 2017-04-19 | 2021-11-23 | (Cnbm) Bengbu Design Research Institute For Glass Industry Co. Ltd | Method for producing a layer structure for thin-film solar cells using etching or laser ablation to produce rear-electrode-layer-free region |
CN109211956A (zh) * | 2017-06-30 | 2019-01-15 | 中国电子科技集团公司第十八研究所 | 一种用于卷对卷连续制备cigs的成分在线测试装置 |
CN107557732B (zh) * | 2017-08-29 | 2019-06-07 | 京东方科技集团股份有限公司 | 蒸镀掩膜板及蒸镀装置、蒸镀工艺及测试膜层厚度的方法 |
CN108342712A (zh) * | 2018-04-24 | 2018-07-31 | 北京铂阳顶荣光伏科技有限公司 | 蒸发源的蒸发速率控制设备、方法、装置及存储介质 |
CN108831956B (zh) * | 2018-06-14 | 2023-12-15 | 浙江尚越新能源开发有限公司 | 柔性太阳能电池铜铟镓硒制造设备 |
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Family Cites Families (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3862857A (en) * | 1972-12-26 | 1975-01-28 | Ibm | Method for making amorphous semiconductor thin films |
CH566399A5 (ko) * | 1973-05-26 | 1975-09-15 | Balzers Patent Beteilig Ag | |
US4121238A (en) * | 1977-02-16 | 1978-10-17 | Bell Telephone Laboratories, Incorporated | Metal oxide/indium phosphide devices |
US4335266A (en) * | 1980-12-31 | 1982-06-15 | The Boeing Company | Methods for forming thin-film heterojunction solar cells from I-III-VI.sub.2 |
US4376688A (en) * | 1981-04-03 | 1983-03-15 | Xerox Corporation | Method for producing semiconductor films |
DE3330092A1 (de) * | 1983-08-20 | 1985-03-07 | Leybold-Heraeus GmbH, 5000 Köln | Verfahren zum einstellen der oertlichen verdampfungsleistung an verdampfern in vakuumaufdampfprozessen |
CA1197088A (en) * | 1983-10-17 | 1985-11-26 | Jerzy A. Dobrowolski | Vapour deposition regulating apparatus |
JPS6220381A (ja) * | 1985-07-16 | 1987-01-28 | シーメンス ソーラー インダストリーズ,エル.ピー. | 二セレン化インジウム銅半導体膜の製造方法 |
US5141564A (en) * | 1988-05-03 | 1992-08-25 | The Boeing Company | Mixed ternary heterojunction solar cell |
US5439575A (en) | 1988-06-30 | 1995-08-08 | Board Of Trustees Of The University Of Illinois | Hybrid method for depositing semi-conductive materials |
US5014288A (en) * | 1989-04-20 | 1991-05-07 | Measurex Corporation | X-ray coating weight controller and sensor |
JP2719039B2 (ja) * | 1990-09-21 | 1998-02-25 | 株式会社富士電機総合研究所 | CuInSe▲下2▼系化合物薄膜の形成方法 |
JPH05315633A (ja) * | 1992-05-01 | 1993-11-26 | Dowa Mining Co Ltd | CuInSe2 系薄膜太陽電池およびその製法 |
US5436204A (en) * | 1993-04-12 | 1995-07-25 | Midwest Research Institute | Recrystallization method to selenization of thin-film Cu(In,Ga)Se2 for semiconductor device applications |
US5441897A (en) | 1993-04-12 | 1995-08-15 | Midwest Research Institute | Method of fabricating high-efficiency Cu(In,Ga)(SeS)2 thin films for solar cells |
US5282985A (en) * | 1993-06-24 | 1994-02-01 | The United States Of America As Represented By The Secretary Of The Air Force | Lubricant coatings |
US5633033A (en) * | 1994-04-18 | 1997-05-27 | Matsushita Electric Industrial Co., Ltd. | Method for manufacturing chalcopyrite film |
JP3202886B2 (ja) * | 1994-04-18 | 2001-08-27 | 松下電器産業株式会社 | カルコパイライト薄膜の製造方法および製造装置 |
US5980975A (en) * | 1994-05-31 | 1999-11-09 | Toray Industries, Inc. | Thin-film-coated substrate manufacturing methods having improved film formation monitoring and manufacturing apparatus |
US5880823A (en) * | 1994-06-10 | 1999-03-09 | Lu; Chih-Shun | Method and apparatus for measuring atomic vapor density in deposition systems |
US5776254A (en) * | 1994-12-28 | 1998-07-07 | Mitsubishi Denki Kabushiki Kaisha | Apparatus for forming thin film by chemical vapor deposition |
JP3431388B2 (ja) * | 1995-03-15 | 2003-07-28 | 松下電器産業株式会社 | カルコパイライト構造半導体薄膜の製造方法 |
US5674555A (en) * | 1995-11-30 | 1997-10-07 | University Of Delaware | Process for preparing group Ib-IIIa-VIa semiconducting films |
US6023020A (en) * | 1996-10-15 | 2000-02-08 | Matsushita Electric Industrial Co., Ltd. | Solar cell and method for manufacturing the same |
JP3249408B2 (ja) * | 1996-10-25 | 2002-01-21 | 昭和シェル石油株式会社 | 薄膜太陽電池の薄膜光吸収層の製造方法及び製造装置 |
JPH10229208A (ja) * | 1996-12-10 | 1998-08-25 | Yazaki Corp | 化合物半導体の製造方法 |
US5814365A (en) * | 1997-08-15 | 1998-09-29 | Micro C Technologies, Inc. | Reactor and method of processing a semiconductor substate |
US6258620B1 (en) * | 1997-10-15 | 2001-07-10 | University Of South Florida | Method of manufacturing CIGS photovoltaic devices |
JP3040373B2 (ja) * | 1998-03-27 | 2000-05-15 | 昭和シェル石油株式会社 | 薄膜太陽電池のZnO系透明導電膜の製造方法 |
US6312836B1 (en) * | 1998-04-10 | 2001-11-06 | The Trustees Of Princeton University | Color-tunable organic light emitting devices |
US6127202A (en) * | 1998-07-02 | 2000-10-03 | International Solar Electronic Technology, Inc. | Oxide-based method of making compound semiconductor films and making related electronic devices |
WO2001037324A1 (en) * | 1999-11-16 | 2001-05-25 | Midwest Research Institute | A NOVEL PROCESSING APPROACH TOWARDS THE FORMATION OF THIN-FILM Cu(In,Ga)Se¿2? |
US6310281B1 (en) * | 2000-03-16 | 2001-10-30 | Global Solar Energy, Inc. | Thin-film, flexible photovoltaic module |
DE10013635A1 (de) * | 2000-03-18 | 2001-09-20 | Gerhard Regittnig | CIS-Dünnfilm-Photovoltaik |
US6423565B1 (en) * | 2000-05-30 | 2002-07-23 | Kurt L. Barth | Apparatus and processes for the massproduction of photovotaic modules |
JP4288641B2 (ja) * | 2000-08-17 | 2009-07-01 | 本田技研工業株式会社 | 化合物半導体成膜装置 |
CN101397649B (zh) * | 2001-02-01 | 2011-12-28 | 株式会社半导体能源研究所 | 能够将有机化合物沉积在衬底上的装置 |
US7691598B2 (en) * | 2001-03-30 | 2010-04-06 | Nanoprobes, Inc. | Method for detecting a target molecule by metal deposition |
US20050095809A1 (en) * | 2001-07-18 | 2005-05-05 | Yuji Nakayama | Method of film-forming transparent electrode layer and device therefor |
US6660538B2 (en) * | 2001-10-29 | 2003-12-09 | Energy Photovoltaics | Non-contacting deposition control of chalcopyrite thin films |
JP3897622B2 (ja) * | 2002-03-18 | 2007-03-28 | 松下電器産業株式会社 | 化合物半導体薄膜の製造方法 |
JP2004255698A (ja) * | 2003-02-26 | 2004-09-16 | Victor Co Of Japan Ltd | 光記録媒体 |
US20050072461A1 (en) * | 2003-05-27 | 2005-04-07 | Frank Kuchinski | Pinhole porosity free insulating films on flexible metallic substrates for thin film applications |
US20050142329A1 (en) * | 2003-12-24 | 2005-06-30 | Anderson Mark T. | Energy efficient construction surfaces |
US7736940B2 (en) * | 2004-03-15 | 2010-06-15 | Solopower, Inc. | Technique and apparatus for depositing layers of semiconductors for solar cell and module fabrication |
JP2008520101A (ja) * | 2004-11-10 | 2008-06-12 | デイスター テクノロジーズ,インコーポレイティド | Cigsにおいて現場接合層を作製するための熱プロセス |
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CN100524838C (zh) | 2009-08-05 |
CN101599515B (zh) | 2013-10-30 |
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