CN114686836B - 一种卷对卷铜铟镓硒蒸镀的xrf检测结构 - Google Patents

一种卷对卷铜铟镓硒蒸镀的xrf检测结构 Download PDF

Info

Publication number
CN114686836B
CN114686836B CN202210310781.9A CN202210310781A CN114686836B CN 114686836 B CN114686836 B CN 114686836B CN 202210310781 A CN202210310781 A CN 202210310781A CN 114686836 B CN114686836 B CN 114686836B
Authority
CN
China
Prior art keywords
roll
xrf
detection probe
indium gallium
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202210310781.9A
Other languages
English (en)
Other versions
CN114686836A (zh
Inventor
罗明新
张卫彪
于金杰
仝雪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Still More Photoelectric Polytron Technologies Inc
Original Assignee
Still More Photoelectric Polytron Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Still More Photoelectric Polytron Technologies Inc filed Critical Still More Photoelectric Polytron Technologies Inc
Priority to CN202210310781.9A priority Critical patent/CN114686836B/zh
Publication of CN114686836A publication Critical patent/CN114686836A/zh
Application granted granted Critical
Publication of CN114686836B publication Critical patent/CN114686836B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C23C14/547—Controlling the film thickness or evaporation rate using measurement on deposited material using optical methods
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

本发明涉及一种卷对卷铜铟镓硒蒸镀的XRF检测结构，解决将需要低温工作的XRF伸入高温、高腐蚀的镀膜腔体中检测铜铟镓硒镀膜厚度，存在技术难点的问题。本装置包括真空腔，真空腔内设置有放卷装置和收卷装置，收放卷装置之间通过输送辊输送基底，基底输送方向中后部设有XRF装置，XRF装置包括X射线源和检测探头，所述X射线源垂直于基底，检测探头相较于基底下表面呈30‑55度倾斜设置，所述检测探头和X射线源伸入真空腔的一侧设置有防护罩，所述防护罩侧壁为双层结构，分别为外隔热层和内低温层，外隔热层和内低温层之间为真空夹层。本发明克服了真空腔内真空、高温、高腐蚀的蒸镀环境与XRF装置低温工作环境的矛盾，检测精度和运行稳定性。

Description

一种卷对卷铜铟镓硒蒸镀的XRF检测结构
技术领域
本发明属于太阳能电池片生产领域，涉及一种柔性太阳能电池片的生产加工设备，特别涉及一种卷对卷铜铟镓硒蒸镀的XRF检测结构。
背景技术
柔性太阳能电池片是在柔性可卷绕的基底上形成太阳能光伏材料镀层。铜铟镓硒（CIGS）薄膜电池是一种质量功率比高、稳定性好的太阳能光伏材料，被普遍认为是最具发展前景的柔性太阳能电池材料。多元共蒸法是最广泛应用的CIGS镀膜方法，在真空环境下完成镀膜，利用铜、铟、镓、硒各元素共蒸，在基底表面反应形成多晶镀层。蒸汽镀膜在真空、高温、高腐蚀的环境下完成，内部的镀膜过程无法直接可视。
为提高生产效率，保障生产的连续性，铜铟镓硒镀膜的过程中，一般实用连续基底进行连续镀膜。连续基底的原材料为卷筒式，镀膜完成后的带膜基底也许收卷成卷筒，因此基底放卷、镀膜、收卷的过程称为卷对卷生产过程。卷对卷铜铟镓硒蒸镀过程在高温、真空、高腐蚀环境下完成，是一个不可视过程，传统的检测装置无法在上述极端条件下长时间稳定工作。
XRF是一种X射线萤光光谱分析(X Ray Fluorescence)装置。XRF装置由激发源（X射线管）和探测系统构成。X射线管产生入射X射线，激发被测样品。受激发的样品中的每一种元素会放射出二次X射线，并且不同的元素所放射出的二次X射线具有特定的能量特性或波长特性。探测系统测量这些放射出来的二次X射线的能量及数量，仪器软体将探测系统所收集到的信息转换成样品中各种元素的种类及含量。
采用XRF可以对基底上各元素的沉积厚度进行测量，但铜铟镓硒镀膜的膜层控制厚度为纳米级，为了保证测量的精度，XRF需与膜层基底近距离测量，然而XRF的工作温度需要在低温和超低温环境下运行，蒸汽镀膜在真空、高温、高腐蚀的环境下完成，如何将需要低温工作的XRF伸入高温、高腐蚀的镀膜腔体中进行在线检测，存在技术难点。
发明内容
本发明的目的在于解决将需要低温工作的XRF伸入高温、高腐蚀的镀膜腔体中检测铜铟镓硒镀膜厚度，存在技术难点的问题，提供一种卷对卷铜铟镓硒蒸镀的XRF检测结构，通过多种隔离和温度调节结构确保XRF的低温和超低温运行环境，同时满足隔绝高温、高腐蚀硒化环境对XRF探头的污染，实现XRF对基底镀膜层的近距离测量，以及长时间的连续稳定在线监测，并确保测量精度。
本发明解决其技术问题所采用的技术方案是：一种卷对卷铜铟镓硒蒸镀的XRF检测结构，包括真空腔，真空腔内设置有放卷装置和收卷装置，放卷装置和收卷装置之间设置若干输送辊，沿放卷装置、输送辊、收卷装置顺序输送设置有基底，基底输送方向中后部设有XRF装置，XRF装置包括X射线源和检测探头，所述X射线源垂直于基底，检测探头相较于基底下表面呈30-55度倾斜设置，所述检测探头和X射线源伸入真空腔的一侧设置有防护罩，所述防护罩侧壁与检测探头、X射线源分别对齐设置窗口，窗口处嵌设玻璃隔板，所述防护罩侧壁为双层结构，分别为外隔热层和内低温层，外隔热层和内低温层之间为屏蔽隔热夹层，内低温层的内部采用水冷降温或外接空调降温。
XRF装置需要在低温环境下工作，而卷对卷铜铟镓硒蒸镀系统需要在真空、高温、高腐蚀环境下运行，采用XRF装置检测铟镓硒蒸镀的镀膜厚度，在工作环境环境上存在很大的矛盾，而且，XRF装置与基底越近，则检测精度越高，反之则精度越低。真空、高温、高腐蚀的真空腔环境客观上限制了XRF装置对基底镀膜的抵近检测。本装置采用凸起至真空腔内的防护罩，让XRF可以抵近检测，防护罩侧壁为夹层结构，夹层内采用隔热的绝缘材料，如橡胶、石棉等，阻断真空腔内的热量向防护罩内部传递，同时也屏蔽电场对检测探头的影响。防护罩内低温层的内侧接水冷降温或者接空调降温，将工作温度降低到25℃左右，最高不超过55℃，确保了XRF装置稳定运行的外部环境。内低温层的内侧有一定的压强，使内外形成一定的压差，保证外部的硒蒸气不会渗透到防护罩内部对XRF检测探头产生腐蚀，防止防护罩和真空腔内外互相影响。XRF装置可以在基底的输送末端设置，检测整体镀膜情况，也可以在基底输送末端和中段均设置，对前半段镀膜情况和整体镀膜情况分别进行检测，从而对前、后段的镀膜情况分别在线监测和调节。
作为优选，所述X射线源和检测探头的延长线在基底上相交，X射线源和检测探头与基底相交点的基底上侧对应设置有输送辊。X射线源垂直透射到基底上，检测探头倾斜设置捕获荧光信号，两者的交点处的基底处恰好设置输送辊，以保证监测点的基底抖动最小，提升检测精度。
作为优选，所述防护罩呈三角型在真空腔腔壁上向内侧凸起，防护罩设置有窗口的侧壁与检测探头垂直，所述X射线源、检测探头均嵌设于真空腔腔壁、位于防护罩内的最后侧，检测探头与窗口之间设置有传递信号的波导管，所述波导管外侧套设有真空管，真空管内为真空环境。本申请中，以靠近基底的一侧为前侧。防护罩的沿基底输送方向的两侧均为45度倾斜侧壁，其余两侧壁为竖直侧壁，防护罩和真空腔侧壁形成三角形的内部空间，X射线源、检测探头设置在真空腔的腔壁上。检测探头的正常工作温度为超低温，可以到达-100℃以下，如果设置过于靠前设置，降温难度大，工作不稳定，因此，本装置采用波导管作为信号中转装置，波导管前端收集信号、并向后传输到检测探头处，波导管可以在25℃左右的常温下工作，真空管对热传递有一定的屏蔽作用，保持波导管温度稳定，且真空管在波导管内外形成真空环境，减少对信号传递的干扰。
作为优选，所述波导管为多孔空心金属管，所述波导管采用多根空心金属管集束而成或者采用单根金属管均匀开孔成型。X射线源在基底激发的荧光信号可以在空心金属管内传递。
作为优选，所述波导管的前端设有金属片保护层和绝缘保护层，所述金属片保护层采用厚度不超过0.3毫米的金属铝。绝缘保护层可以屏蔽真空腔内的电场，防止波导管的信号传输过程中产生异常电信号；金属片保护层对信号进行过滤。
作为优选，所述绝缘保护层为厚度不超过50微米PI膜或者垫设在窗口后侧的绝缘垫片。
作为优选，所述防护罩内低温层内部的温度不超过55℃。
作为优选，所述检测探头采用热电制冷系统降温，所述热电制冷系统具有冷端和热端，冷端贴设于检测探头处，热端接在真空腔腔壁外侧并采用水冷散热，水冷散热的水流温度为5-15℃。检测探头早防护罩内靠后设置，采用热电制冷系统降温，形成超低温工作环境。
作为优选，所述防护罩外壁环绕窗口处设置放置硒蒸气沉积的加热器。
作为优选，一个所述防护罩内并列设置两套XRF装置，分别与基底两侧对应。
本发明克服了真空腔内真空、高温、高腐蚀的蒸镀环境与XRF装置低温工作环境的矛盾，采用夹层防护罩的结构在真空腔的侧壁上构建XRF装置低温工作的空间，并采用波导管传递信号的方式，使检测探头可以既靠后设置、又能抵近检测，兼具检测精度和运行稳定性。
附图说明
下面结合附图对本发明做进一步说明。
图1是本发明的一种结构示意图。
图2是本发明的XRF装置外部结构示意图。
图3是本发明的XRF装置内部结构示意图。
图中：1、真空腔，2、放卷装置，3、收卷装置，4、输送辊，5、基底，6、防护罩，7、真空腔腔壁，8、窗口，9、加热器，10、固定压板，11、外隔热层，12、屏蔽隔热夹层，13、内低温层，14、X射线源，15、检测探头，16、真空管，17、波导管，18、绝缘保护层，19、水冷接口。
具体实施方式
下面通过具体实施例并结合附图对本发明进一步说明。
实施例：一种卷对卷铜铟镓硒蒸镀的XRF检测结构，如图1所示。包括真空腔，真空腔内设置有放卷装置2和收卷装置3，放卷装置2和收卷装置3之间设置若干输送辊4，沿放卷装置、输送辊、收卷装置顺序输送设置有基底5。基底沿输送方向设置六个镀膜区，在第三、四镀膜区之间以及收卷装置之前分别设置有XRF装置。
如图1、2、3所示，XRF装置包括X射线源14（含X射线电源）和检测探头15，所述X射线源14垂直于基底5，检测探头15相较于基底下表面呈45度倾斜设置，X射线源和检测探头的延长线在基底上相交，X射线源14和检测探头15与基底5相交点的基底上侧对应设置有输送辊4。
如图2、3所示，所述检测探头15和X射线源14伸入真空腔1的一侧设置有防护罩，防护罩6呈三角型在真空腔腔壁上向内侧凸起，防护罩的前后侧壁均为45度倾斜，所述防护罩侧壁与检测探头、X射线源分别对齐设置窗口，窗口处嵌设玻璃隔板，防护罩设置有窗口8的侧壁与检测探头垂直。防护罩外壁环绕窗口8处设置放置硒蒸气沉积的加热器9。真空腔腔壁上还设有固定防护罩的固定压板10。
防护罩6内并列设置两套XRF装置，分别与基底两侧对应。所述X射线源、检测探头均嵌设于真空腔腔壁7、位于防护罩内的最后侧，检测探头15与窗口8之间设置有传递信号的波导管17。波导管外侧套设有真空管 16，使整个波导管的内外均处于真空环境，减少信号传递所受的干扰，同时真空管内的真空环境使波导管的工作温度波动更小。波导管17的前端设有金属片保护层和绝缘保护层18，所述金属片保护层采用厚度不超过0.3毫米的金属铝片，对噪声信号进行过滤。绝缘保护层18为厚度不超过50微米PI膜或者垫设在窗口后侧的绝缘垫片。波导管17为多孔空心金属管，所述波导管采用多根空心金属管集束而成。
所述防护罩侧壁为双层结构，分别为外隔热层11和内低温层13，外隔热层和内低温层之间为屏蔽隔热夹层12，内低温层的内部采用水冷降温，在防护罩对应的真空腔腔壁7上设有水冷接口19。防护罩内低温层内部的温度一般为25℃，最高不超过55℃。检测探头15采用热电制冷系统降温，所述热电制冷系统具有冷端和热端，冷端贴设于检测探头处，热端接在真空腔腔壁外侧并采用水冷散热，水冷散热的水流温度为5-15℃。

Claims (10)

1.一种卷对卷铜铟镓硒蒸镀的XRF检测结构，包括真空腔，真空腔内设置有放卷装置和收卷装置，放卷装置和收卷装置之间设置若干输送辊，沿放卷装置、输送辊、收卷装置顺序输送设置有基底，其特征在于：基底输送方向中后部设有XRF装置，XRF装置包括X射线源和检测探头，所述X射线源垂直于基底，检测探头相较于基底下表面呈30-55度倾斜设置，所述检测探头和X射线源伸入真空腔的一侧设置有防护罩，所述防护罩侧壁与检测探头、X射线源分别对齐设置窗口，窗口处嵌设玻璃隔板，所述防护罩侧壁为双层结构，分别为外隔热层和内低温层，外隔热层和内低温层之间为屏蔽隔热夹层，内低温层的内部采用水冷降温或外接空调降温；检测探头与窗口之间设置有传递信号的波导管，所述波导管外侧套设有真空管，真空管内为真空环境。
2.根据权利要求1所述的一种卷对卷铜铟镓硒蒸镀的XRF检测结构，其特征在于：所述X射线源和检测探头的延长线在基底上相交，X射线源和检测探头与基底相交点的基底上侧对应设置有输送辊。
3.根据权利要求1或2所述的一种卷对卷铜铟镓硒蒸镀的XRF检测结构，其特征在于：所述防护罩呈三角型在真空腔腔壁上向内侧凸起，防护罩设置有窗口的侧壁与检测探头垂直，所述X射线源、检测探头均嵌设于真空腔腔壁、位于防护罩内的最后侧。
4.根据权利要求3所述的一种卷对卷铜铟镓硒蒸镀的XRF检测结构，其特征在于：所述波导管为多孔空心金属管，所述波导管采用多根空心金属管集束而成或者采用单根金属管均匀开孔成型。
5.根据权利要求3所述的一种卷对卷铜铟镓硒蒸镀的XRF检测结构，其特征在于：所述波导管的前端设有金属片保护层和绝缘保护层，所述金属片保护层采用厚度不超过0.3毫米的金属铝。
6.根据权利要求5所述的一种卷对卷铜铟镓硒蒸镀的XRF检测结构，其特征在于：所述绝缘保护层为厚度不超过50微米PI膜或者垫设在窗口后侧的绝缘垫片。
7.根据权利要求1或2所述的一种卷对卷铜铟镓硒蒸镀的XRF检测结构，其特征在于：所述防护罩内低温层内部的温度不超过55℃。
8.根据权利要求1或2所述的一种卷对卷铜铟镓硒蒸镀的XRF检测结构，其特征在于：所述检测探头采用热电制冷系统降温，所述热电制冷系统具有冷端和热端，冷端贴设于检测探头处，热端接在真空腔腔壁外侧并采用水冷散热，水冷散热的水流温度为5-15℃。
9.根据权利要求1或2所述的一种卷对卷铜铟镓硒蒸镀的XRF检测结构，其特征在于：所述防护罩外壁环绕窗口处设置防止硒蒸气沉积的加热器。
10.根据权利要求1或2所述的一种卷对卷铜铟镓硒蒸镀的XRF检测结构，其特征在于：一个所述防护罩内并列设置两套XRF装置，分别与基底两侧对应。
CN202210310781.9A 2022-03-28 2022-03-28 一种卷对卷铜铟镓硒蒸镀的xrf检测结构 Active CN114686836B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210310781.9A CN114686836B (zh) 2022-03-28 2022-03-28 一种卷对卷铜铟镓硒蒸镀的xrf检测结构

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210310781.9A CN114686836B (zh) 2022-03-28 2022-03-28 一种卷对卷铜铟镓硒蒸镀的xrf检测结构

Publications (2)

Publication Number Publication Date
CN114686836A CN114686836A (zh) 2022-07-01
CN114686836B true CN114686836B (zh) 2023-08-22

Family

ID=82140731

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210310781.9A Active CN114686836B (zh) 2022-03-28 2022-03-28 一种卷对卷铜铟镓硒蒸镀的xrf检测结构

Country Status (1)

Country Link
CN (1) CN114686836B (zh)

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2005219926A1 (en) * 2004-03-05 2005-09-15 Solibro Research Ab Method and apparatus for in-line process control of the CIGS process
US7020238B1 (en) * 2005-01-31 2006-03-28 Oxford Instruments Analytical Oy Adapter and analyzer device for performing X-ray fluorescence analysis on hot surfaces
KR20110095982A (ko) * 2010-02-20 2011-08-26 진중 김 씨아이지에스 박막제조용 병합증발원
US8475042B1 (en) * 2009-10-21 2013-07-02 Ceres Technologies, Inc. Thermal shield system for high temperature environment XRF metrology tools
EP2881973A1 (en) * 2013-12-04 2015-06-10 Institute of Solid State Physics, University of Latvia Device and method for pvd process diagnostic using X-ray fluorescence local probe
WO2015195388A1 (en) * 2014-06-17 2015-12-23 NuvoSun, Inc. Selenization or sufurization method of roll to roll metal substrates
WO2017177517A1 (zh) * 2016-04-11 2017-10-19 中国科学院声学研究所 一种用于深井探测的x射线荧光测井探管
WO2018114378A1 (en) * 2016-12-22 2018-06-28 Flisom Ag Linear source for vapor deposition with heat shields
CN108831956A (zh) * 2018-06-14 2018-11-16 浙江尚越新能源开发有限公司 柔性太阳能电池铜铟镓硒制造设备
CN208336251U (zh) * 2018-06-14 2019-01-04 浙江尚越新能源开发有限公司 柔性太阳能电池铜铟镓硒制造设备
CN110344019A (zh) * 2019-06-25 2019-10-18 北京汉能薄膜发电技术有限公司 一种铜铟镓硒镀膜设备的真空腔室
CN112626465A (zh) * 2020-12-29 2021-04-09 尚越光电科技股份有限公司 一种cigs共蒸法的硒源外置式结构

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10230990A1 (de) * 2002-07-10 2004-02-05 Elisabeth Katz Vorrichtung zur Durchführung einer Online-Elementanalyse
JP6324060B2 (ja) * 2013-12-24 2018-05-16 株式会社日立ハイテクサイエンス Ｘ線分析装置

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2005219926A1 (en) * 2004-03-05 2005-09-15 Solibro Research Ab Method and apparatus for in-line process control of the CIGS process
US7020238B1 (en) * 2005-01-31 2006-03-28 Oxford Instruments Analytical Oy Adapter and analyzer device for performing X-ray fluorescence analysis on hot surfaces
US8475042B1 (en) * 2009-10-21 2013-07-02 Ceres Technologies, Inc. Thermal shield system for high temperature environment XRF metrology tools
KR20110095982A (ko) * 2010-02-20 2011-08-26 진중 김 씨아이지에스 박막제조용 병합증발원
EP2881973A1 (en) * 2013-12-04 2015-06-10 Institute of Solid State Physics, University of Latvia Device and method for pvd process diagnostic using X-ray fluorescence local probe
WO2015195388A1 (en) * 2014-06-17 2015-12-23 NuvoSun, Inc. Selenization or sufurization method of roll to roll metal substrates
WO2017177517A1 (zh) * 2016-04-11 2017-10-19 中国科学院声学研究所 一种用于深井探测的x射线荧光测井探管
WO2018114378A1 (en) * 2016-12-22 2018-06-28 Flisom Ag Linear source for vapor deposition with heat shields
CN108831956A (zh) * 2018-06-14 2018-11-16 浙江尚越新能源开发有限公司 柔性太阳能电池铜铟镓硒制造设备
CN208336251U (zh) * 2018-06-14 2019-01-04 浙江尚越新能源开发有限公司 柔性太阳能电池铜铟镓硒制造设备
CN110344019A (zh) * 2019-06-25 2019-10-18 北京汉能薄膜发电技术有限公司 一种铜铟镓硒镀膜设备的真空腔室
CN112626465A (zh) * 2020-12-29 2021-04-09 尚越光电科技股份有限公司 一种cigs共蒸法的硒源外置式结构

Also Published As

Publication number Publication date
CN114686836A (zh) 2022-07-01

Similar Documents

Publication Publication Date Title
US6346184B1 (en) Method of producing zinc oxide thin film, method of producing photovoltaic device and method of producing semiconductor device
US6383359B2 (en) Method for forming a zinc oxide layer and method for producing a photovoltaic device
KR100348108B1 (ko) 특정횡단면의광입사측표면영역을구비한배면투명도전층을갖는광전지소자및상기광전지소자를포함하는모듈
JPH09246581A (ja) 光起電力素子
JP4451927B2 (ja) 薄膜の製造方法
CN102721479A (zh) 一种户外电气设备温升的在线监测方法
CN110967303B (zh) 一种浮法玻璃在线镀膜膜层质量的在线连续检测系统
CN114686836B (zh) 一种卷对卷铜铟镓硒蒸镀的xrf检测结构
CN112629747A (zh) 一种用于高腐蚀性蒸汽压监测的离子真空计
CN203216618U (zh) 多通道低耗能无线温度集中采集监测装置
CN206022406U (zh) Cigs太阳能电池薄膜生产线
CN108831956B (zh) 柔性太阳能电池铜铟镓硒制造设备
CN114464366B (zh) 一种高温超导电缆传导冷却降温系统及方法
CN206232799U (zh) 一种多区域多源共蒸发系统
CN208336251U (zh) 柔性太阳能电池铜铟镓硒制造设备
CN103204637A (zh) 一种透明导电氧化物镀膜玻璃镀膜线真空系统
CN112525358B (zh) 一种cigs共蒸法的红外测温装置及其测温控制方法
CN211011973U (zh) 槽式太阳能集热管真空性能测量装置
CN117135937B (zh) 钙钛矿电池、光伏组件、光伏系统和用电装置
Liang et al. Comprehensive assessment of advanced solar facade: thermal, optical and economic assessment
CN213866393U (zh) 用于薄膜太阳能电池制造的高温蒸发炉
Takano et al. Production technologies of film solar cell
JP2004296616A (ja) 光起電力素子
JP3624120B2 (ja) 光起電力素子の製造方法、光起電力素子製造装置
CN115631967A (zh) 一种密度继电器用恒温装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CP02 Change in the address of a patent holder

Address after: Room 211, Building 3, No. 399 Xingguo Road, Linping Street, Linping District, Hangzhou City, Zhejiang Province, 311103

Patentee after: Still more photoelectric Polytron Technologies Inc.

Address before: Room 603, building 1, Shangyue Green Valley Center, 1999 yuhangtang Road, Wuchang Street, Yuhang District, Hangzhou City, Zhejiang Province

Patentee before: Still more photoelectric Polytron Technologies Inc.

CP02 Change in the address of a patent holder