WO2010126274A3 - Ｃｉｇｔ 박막 및 그 제조방법 - Google Patents

Ｃｉｇｔ 박막 및 그 제조방법 Download PDF

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Publication number
WO2010126274A3
WO2010126274A3 PCT/KR2010/002634 KR2010002634W WO2010126274A3 WO 2010126274 A3 WO2010126274 A3 WO 2010126274A3 KR 2010002634 W KR2010002634 W KR 2010002634W WO 2010126274 A3 WO2010126274 A3 WO 2010126274A3
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WO
WIPO (PCT)
Prior art keywords
thin film
precursor
cigt
gallium
indium
Prior art date
Application number
PCT/KR2010/002634
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English (en)
French (fr)
Other versions
WO2010126274A2 (ko
Inventor
장혁규
Original Assignee
주식회사 메카로닉스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020090037395A external-priority patent/KR20100118625A/ko
Priority claimed from KR1020100035729A external-priority patent/KR20110116354A/ko
Application filed by 주식회사 메카로닉스 filed Critical 주식회사 메카로닉스
Publication of WO2010126274A2 publication Critical patent/WO2010126274A2/ko
Publication of WO2010126274A3 publication Critical patent/WO2010126274A3/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

본 발명은 다음 화학식 1로 표시되는 구리-인듐-갈륨-텔러륨계 전구체의 켈코파이라이트(Cu-In-Ga-Te(CIGT)-based chalcopyrite) 화합물 반도체 박막, 및 진공 챔버 내에 장착된 기판상에 구리(Cu) 전구체, 인듐(In) 전구체, 갈륨(Ga) 전구체, 및 텔러륨(Te) 전구체를 동시 공급 또는 순차 공급하면서 화학기상 증착법(Chemical Vapor Deposition) 또는 원자층 증착법(Atomic Layer Deposition)을 이용하여 박막을 제조하는 것을 특징으로 하는 CIGT 박막 제조방법에 관한 것이다. <화학식 1> CuInxGa1-xTe2 (상기 화학식 1에서 0<x<1이다.) 본 발명에 의하면 구리-인듐-갈륨-셀레늄(CIGS)으로 이루어진 화합물 반도체 박막 에서 셀레늄의 위험성을 해결할 수 있는 새로운 화합물 반도체 박막인 CIGT 박막을 제공할 수 있고, 대량생산이 가능하면서도 제조단가가 낮으며 막질이 우수한 대면적 박막을 용이하게 형성할 수 있는 제조방법을 제공할 수 있다.
PCT/KR2010/002634 2009-04-29 2010-04-27 Ｃｉｇｔ 박막 및 그 제조방법 WO2010126274A2 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2009-0037395 2009-04-29
KR1020090037395A KR20100118625A (ko) 2009-04-29 2009-04-29 구리-인듐-갈륨-텔러륨계 전구체의 켈코파이라이트 화합물 반도체 박막 및 이의 제조방법
KR1020100035729A KR20110116354A (ko) 2010-04-19 2010-04-19 Ｃｉｇｔ 박막 및 그 제조방법
KR10-2010-0035729 2010-04-19

Publications (2)

Publication Number Publication Date
WO2010126274A2 WO2010126274A2 (ko) 2010-11-04
WO2010126274A3 true WO2010126274A3 (ko) 2011-03-03

Family

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Application Number Title Priority Date Filing Date
PCT/KR2010/002634 WO2010126274A2 (ko) 2009-04-29 2010-04-27 Ｃｉｇｔ 박막 및 그 제조방법

Country Status (1)

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WO (1) WO2010126274A2 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2540733A1 (en) * 2011-06-30 2013-01-02 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Deposition of indium containing thin films using new indium precursors
EP2540732A1 (en) * 2011-06-30 2013-01-02 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Deposition of gallium containing thin films using new gallium precursors.
KR101383807B1 (ko) * 2012-08-14 2014-04-10 지에스칼텍스 주식회사 Ｃｉｓ계 또는 ｃｉｇｓ계 태양전지용 광흡수층의 제조방법 및 ｃｉｓ계 또는 ｃｉｇｓ계 태양전지용 광흡수 잉크

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010017369A1 (en) * 2000-01-13 2001-08-30 Shingo Iwasaki Electron-emitting device and method of manufacturing the same and display apparatus using the same
US20080000518A1 (en) * 2006-03-28 2008-01-03 Basol Bulent M Technique for Manufacturing Photovoltaic Modules

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010017369A1 (en) * 2000-01-13 2001-08-30 Shingo Iwasaki Electron-emitting device and method of manufacturing the same and display apparatus using the same
US20080000518A1 (en) * 2006-03-28 2008-01-03 Basol Bulent M Technique for Manufacturing Photovoltaic Modules

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
BENABDESLEM M. ET AL: "Growth and characterization of CuInxGa1-xTe2 used for photovoltaic conversion", SOLAR ENERGY, vol. 80, no. 2, 9 September 2005 (2005-09-09), pages 196 - 200 *
GOMBIA E. ET AL: "CVD growth, thermodynamical study and electrical characterization of CuBTe2 (B=A1, Ga, In) single crystals", PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION, vol. 10, 15 August 1984 (1984-08-15), pages 225 - 233 *
GREMENOK V. F. ET AL: "Characterization of polycrystalline Cu (In, Ga) Te2 thin films prepared by pulsed laser deposition", THIN SOLID FILMS, vol. 394, no. 1-2, 15 August 2001 (2001-08-15), pages 24 - 29 *

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Publication number Publication date
WO2010126274A2 (ko) 2010-11-04

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