JP2018500774A - 硫化ナトリウムインジウム緩衝層を有する薄膜太陽電池のための層システムの製造方法 - Google Patents
硫化ナトリウムインジウム緩衝層を有する薄膜太陽電池のための層システムの製造方法 Download PDFInfo
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- JP2018500774A JP2018500774A JP2017534726A JP2017534726A JP2018500774A JP 2018500774 A JP2018500774 A JP 2018500774A JP 2017534726 A JP2017534726 A JP 2017534726A JP 2017534726 A JP2017534726 A JP 2017534726A JP 2018500774 A JP2018500774 A JP 2018500774A
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- 239000000872 buffer Substances 0.000 title claims abstract description 170
- 239000010409 thin film Substances 0.000 title claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- GKCNVZWZCYIBPR-UHFFFAOYSA-N sulfanylideneindium Chemical compound [In]=S GKCNVZWZCYIBPR-UHFFFAOYSA-N 0.000 title claims abstract description 19
- 239000011734 sodium Substances 0.000 claims abstract description 117
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims abstract description 92
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 92
- 150000001875 compounds Chemical class 0.000 claims abstract description 35
- IPXQQTJZWMRLBH-UHFFFAOYSA-N sodium indium(3+) disulfide Chemical compound [Na+].[S--].[S--].[In+3] IPXQQTJZWMRLBH-UHFFFAOYSA-N 0.000 claims abstract description 17
- 230000008021 deposition Effects 0.000 claims abstract description 14
- 239000002250 absorbent Substances 0.000 claims abstract description 9
- 230000002745 absorbent Effects 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 66
- 229910052738 indium Inorganic materials 0.000 claims description 45
- 229910052717 sulfur Inorganic materials 0.000 claims description 42
- 239000010949 copper Substances 0.000 claims description 35
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 25
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- 238000010521 absorption reaction Methods 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 17
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 229910052951 chalcopyrite Inorganic materials 0.000 claims description 9
- -1 chalcopyrite compound Chemical class 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 238000000231 atomic layer deposition Methods 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 229910052736 halogen Inorganic materials 0.000 claims description 6
- 150000002367 halogens Chemical class 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 238000005240 physical vapour deposition Methods 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 238000000224 chemical solution deposition Methods 0.000 claims description 5
- 230000007423 decrease Effects 0.000 claims description 5
- 238000002207 thermal evaporation Methods 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 239000000460 chlorine Substances 0.000 claims description 4
- 229910052801 chlorine Inorganic materials 0.000 claims description 4
- 238000005118 spray pyrolysis Methods 0.000 claims description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 22
- AXCIGYOXXCQVPM-UHFFFAOYSA-N [In]=S.[Na] Chemical compound [In]=S.[Na] AXCIGYOXXCQVPM-UHFFFAOYSA-N 0.000 description 22
- 239000011593 sulfur Substances 0.000 description 22
- 239000011669 selenium Substances 0.000 description 21
- 239000000126 substance Substances 0.000 description 18
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 14
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 14
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 14
- 239000006096 absorbing agent Substances 0.000 description 12
- 239000000203 mixture Substances 0.000 description 10
- 239000007858 starting material Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 239000011733 molybdenum Substances 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- 230000006978 adaptation Effects 0.000 description 5
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- 239000011787 zinc oxide Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical group [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 4
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 3
- 238000005275 alloying Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- RLIUKKHIBMHFOK-UHFFFAOYSA-N indium sodium Chemical compound [Na].[In] RLIUKKHIBMHFOK-UHFFFAOYSA-N 0.000 description 3
- 229910001092 metal group alloy Inorganic materials 0.000 description 3
- 238000007704 wet chemistry method Methods 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910000528 Na alloy Inorganic materials 0.000 description 2
- 239000011358 absorbing material Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052798 chalcogen Inorganic materials 0.000 description 2
- 150000001787 chalcogens Chemical class 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
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- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 150000003388 sodium compounds Chemical class 0.000 description 2
- GRVFOGOEDUUMBP-UHFFFAOYSA-N sodium sulfide (anhydrous) Chemical group [Na+].[Na+].[S-2] GRVFOGOEDUUMBP-UHFFFAOYSA-N 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RBORURQQJIQWBS-QVRNUERCSA-N (4ar,6r,7r,7as)-6-(6-amino-8-bromopurin-9-yl)-2-hydroxy-2-sulfanylidene-4a,6,7,7a-tetrahydro-4h-furo[3,2-d][1,3,2]dioxaphosphinin-7-ol Chemical compound C([C@H]1O2)OP(O)(=S)O[C@H]1[C@@H](O)[C@@H]2N1C(N=CN=C2N)=C2N=C1Br RBORURQQJIQWBS-QVRNUERCSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BKQMNPVDJIHLPD-UHFFFAOYSA-N OS(=O)(=O)[Se]S(O)(=O)=O Chemical compound OS(=O)(=O)[Se]S(O)(=O)=O BKQMNPVDJIHLPD-UHFFFAOYSA-N 0.000 description 1
- QEWCDOSBINPOPV-UHFFFAOYSA-N S(=O)(=O)(O)[Se]S(=O)(=O)O.[Sn].[Zn].[Cu] Chemical compound S(=O)(=O)(O)[Se]S(=O)(=O)O.[Sn].[Zn].[Cu] QEWCDOSBINPOPV-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910003363 ZnMgO Inorganic materials 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
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- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 229910052979 sodium sulfide Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
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- 238000002042 time-of-flight secondary ion mass spectrometry Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000004065 wastewater treatment Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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Abstract
Description
2 基板
3 裏側電極
4 吸収層
5 緩衝層
6 第2の緩衝層
7 前側電極
8 第1のナトリウムチオインデート供給源
9 第2のナトリウムチオインデート供給源
10 搬送方向
11 第1の蒸気ビーム
12 第2の蒸気ビーム
13 サンプル担体
100 薄膜太陽電池
Claims (15)
- 薄膜太陽電池(100)のための層システム(1)を製造する方法であって、
a)吸収層(4)が製造され、
b)前記吸収層(4)上に緩衝層(5)が製造され、
前記緩衝層(5)は、式NaxIny−x/3S、0.063≦x≦0.625および0.681≦y≦1.50に従う硫化ナトリウムインジウムを含み、
前記緩衝層(5)は、硫化インジウムの堆積なしで、少なくとも1つのナトリウムチオインデート化合物に基づいて製造される、
方法。 - 前記緩衝層(5)は、前記ナトリウムチオインデート化合物のNaIn3S5、NaIn5S8およびNaInS2から選択される少なくとも1つの化合物に基づいて製造される、
請求項1に記載の方法。 - 前記緩衝層(5)は、ステップb)において、湿式化学浴堆積、原子層堆積(ALD)、イオン層気体堆積(ILGAR)、噴霧熱分解、化学蒸着(CVD)または物理蒸着(PVD)、スパッタリング、熱蒸発または電子ビーム蒸発によって、特に、少なくとも1つまたはさまざまなナトリウムチオインデート化合物のための個別の供給源から製造される、
請求項1または2に記載の方法。 - 前記緩衝層(5)は、ステップb)において、気相から堆積され、
堆積される材料の少なくとも1つの成分の濃度は、その気相中で減少し、それゆえ、前記吸収層(4)上に堆積される前に減少する、
請求項1から3のいずれかに記載の方法。 - 前記堆積される材料の前記少なくとも1つの成分の前記濃度は、その気相において、堆積室に導入される材料に結合することによって減少し、前記材料に、前記成分は、物理的および/または化学的に結合可能である、
請求項4に記載の方法。 - 前記吸収層(4)は、インライン方法または回転方法で、1つのナトリウムチオインデート化合物の1つの蒸気ビームを通り、または、互いに異なる複数のナトリウムチオインデート化合物の複数の蒸気ビーム(11、12)を通り、運ばれ、前記複数の蒸気ビーム(11、12)は、完全に重なる、部分的に重なる、または、重ならない、
請求項1から5のいずれかに記載の方法。 - 前記吸収層(4)上に配置される前記緩衝層(5)は、式NaxIny−x/3S、0.063≦x≦0.469および0.681≦y≦1.01に従う硫化ナトリウムインジウムを含む、
請求項1から6のいずれかに記載の方法。 - 前記吸収層(4)上に配置される前記緩衝層(5)は、式NaxIny−x/3S、0.13≦x≦0.32および0.681≦y≦0.78に従う硫化ナトリウムインジウムを含む、
請求項1から7のいずれかに記載の方法。 - 前記緩衝層(5)中、ナトリウムおよびインジウムのモル分率の比率は、0.2より大きい、
請求項1から8のいずれかに記載の方法。 - 前記緩衝層(5)は、ナトリウムのモル分率が、5原子%より大きく、特に7原子%より大きく、特に7.2原子%より大きい、
請求項1から9のいずれかに記載の方法。 - 前記緩衝層(5)は、ハロゲン、例えば塩素のモル分率、または、銅のモル分率が、7原子%未満、特に5原子%未満である、
請求項1から10のいずれかに記載の方法。 - 前記緩衝層(5)は、酸素のモル分率が10原子%未満である、
請求項1から11のいずれかに記載の方法。 - 前記緩衝層(5)の層厚は、10nmから100nmまで、特に20nmから60nmまでであり、
前記緩衝層(5)は、アモルファス性または微結晶性である、
請求項1から12のいずれかに記載の方法。 - 前記吸収層(4)は、黄銅鉱化合物半導体を含み、特に、Cu2ZnSn(S,Se)4、Cu(In,Ga,Al)(S,Se)2、CuInSe2、CuInS2、Cu(In,Ga)Se2およびCu(In,Ga)(S,Se)2から選択される黄銅鉱化合物半導体を含む、
請求項1から13のいずれかに記載の方法。 - 薄膜太陽電池(100)を製造する方法であって、前記方法は、
−基板(2)を準備するステップと、
−前記基板(2)上に裏側電極(3)を配置するステップと、
−請求項1から14のいずれかに記載の方法に従って、前記裏側電極(3)上に配置される層システム(1)を製造するステップと、
−前記層システム(1)上に前側電極(7)を配置するステップと、
を含む方法。
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- 2014-12-22 US US15/532,053 patent/US20170345651A1/en not_active Abandoned
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