CN111206222A - 一种镀膜设备及镀膜方法 - Google Patents
一种镀膜设备及镀膜方法 Download PDFInfo
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- CN111206222A CN111206222A CN201811303666.9A CN201811303666A CN111206222A CN 111206222 A CN111206222 A CN 111206222A CN 201811303666 A CN201811303666 A CN 201811303666A CN 111206222 A CN111206222 A CN 111206222A
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- evaporation source
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- evaporation
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- 238000000034 method Methods 0.000 title claims abstract description 47
- 238000009501 film coating Methods 0.000 title description 8
- 239000007888 film coating Substances 0.000 title description 7
- 238000001883 metal evaporation Methods 0.000 claims abstract description 340
- 238000000151 deposition Methods 0.000 claims abstract description 334
- 230000008021 deposition Effects 0.000 claims abstract description 317
- 229910052755 nonmetal Inorganic materials 0.000 claims abstract description 121
- 239000010409 thin film Substances 0.000 claims abstract description 88
- 238000000576 coating method Methods 0.000 claims abstract description 46
- 239000011248 coating agent Substances 0.000 claims abstract description 34
- 238000001704 evaporation Methods 0.000 claims description 355
- 230000008020 evaporation Effects 0.000 claims description 355
- 239000010949 copper Substances 0.000 claims description 93
- 239000000758 substrate Substances 0.000 claims description 80
- 239000010408 film Substances 0.000 claims description 67
- 229910052733 gallium Inorganic materials 0.000 claims description 50
- 229910052738 indium Inorganic materials 0.000 claims description 49
- 238000010438 heat treatment Methods 0.000 claims description 28
- 238000005137 deposition process Methods 0.000 claims description 21
- 229910052783 alkali metal Inorganic materials 0.000 claims description 17
- 150000001340 alkali metals Chemical class 0.000 claims description 17
- 238000007747 plating Methods 0.000 claims description 15
- 238000012805 post-processing Methods 0.000 claims description 12
- 239000007791 liquid phase Substances 0.000 claims description 6
- 229910052711 selenium Inorganic materials 0.000 claims description 6
- 150000001339 alkali metal compounds Chemical class 0.000 claims description 5
- 238000010248 power generation Methods 0.000 abstract description 12
- 238000010586 diagram Methods 0.000 description 20
- 230000000052 comparative effect Effects 0.000 description 14
- 238000002425 crystallisation Methods 0.000 description 13
- 230000008025 crystallization Effects 0.000 description 13
- 238000001816 cooling Methods 0.000 description 9
- 238000001755 magnetron sputter deposition Methods 0.000 description 9
- 239000013078 crystal Substances 0.000 description 7
- 238000002203 pretreatment Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000000843 powder Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 238000012163 sequencing technique Methods 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910018292 Cu2In Inorganic materials 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0694—Halides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
Claims (13)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811303666.9A CN111206222A (zh) | 2018-11-02 | 2018-11-02 | 一种镀膜设备及镀膜方法 |
Applications Claiming Priority (1)
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CN201811303666.9A CN111206222A (zh) | 2018-11-02 | 2018-11-02 | 一种镀膜设备及镀膜方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN111206222A true CN111206222A (zh) | 2020-05-29 |
Family
ID=70782346
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811303666.9A Pending CN111206222A (zh) | 2018-11-02 | 2018-11-02 | 一种镀膜设备及镀膜方法 |
Country Status (1)
Country | Link |
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CN (1) | CN111206222A (zh) |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101599515A (zh) * | 2004-03-05 | 2009-12-09 | 索里布罗研究公司 | 对cigs工艺进行直列式过程控制的方法和装置 |
CN102492923A (zh) * | 2011-12-23 | 2012-06-13 | 中国电子科技集团公司第十八研究所 | 柔性衬底上卷对卷在线控制沉积吸收层的方法 |
CN102763230A (zh) * | 2010-02-22 | 2012-10-31 | 太阳能光电股份公司 | 制造半导体层的方法和装置 |
CN103866236A (zh) * | 2012-12-18 | 2014-06-18 | 北京汉能创昱科技有限公司 | 一种铜铟镓硒薄膜电池共蒸发线性源的布置方法 |
CN106531826A (zh) * | 2016-11-16 | 2017-03-22 | 深圳市金光能太阳能有限公司 | 铜锢稼硒薄膜太阳能电池的制备方法 |
WO2018024510A1 (en) * | 2016-08-05 | 2018-02-08 | Flisom Ag | Homogeneous linear evaporation source with heater |
WO2018114379A1 (en) * | 2016-12-22 | 2018-06-28 | Flisom Ag | Roll-to roll vapor deposition system |
CN108269868A (zh) * | 2018-01-29 | 2018-07-10 | 北京铂阳顶荣光伏科技有限公司 | 薄膜太阳能电池 |
-
2018
- 2018-11-02 CN CN201811303666.9A patent/CN111206222A/zh active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101599515A (zh) * | 2004-03-05 | 2009-12-09 | 索里布罗研究公司 | 对cigs工艺进行直列式过程控制的方法和装置 |
CN102763230A (zh) * | 2010-02-22 | 2012-10-31 | 太阳能光电股份公司 | 制造半导体层的方法和装置 |
CN102492923A (zh) * | 2011-12-23 | 2012-06-13 | 中国电子科技集团公司第十八研究所 | 柔性衬底上卷对卷在线控制沉积吸收层的方法 |
CN103866236A (zh) * | 2012-12-18 | 2014-06-18 | 北京汉能创昱科技有限公司 | 一种铜铟镓硒薄膜电池共蒸发线性源的布置方法 |
WO2018024510A1 (en) * | 2016-08-05 | 2018-02-08 | Flisom Ag | Homogeneous linear evaporation source with heater |
CN106531826A (zh) * | 2016-11-16 | 2017-03-22 | 深圳市金光能太阳能有限公司 | 铜锢稼硒薄膜太阳能电池的制备方法 |
WO2018114379A1 (en) * | 2016-12-22 | 2018-06-28 | Flisom Ag | Roll-to roll vapor deposition system |
CN108269868A (zh) * | 2018-01-29 | 2018-07-10 | 北京铂阳顶荣光伏科技有限公司 | 薄膜太阳能电池 |
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Address after: 100076 6015, 6th floor, building 8, 9 Yingshun Road, Yinghai Town, Daxing District, Beijing Applicant after: Beijing Dingrong Photovoltaic Technology Co.,Ltd. Address before: 100176 Beijing Daxing District Beijing economic and Technological Development Zone Rongchang East Street 7 hospital 6 Building 3001 room. Applicant before: BEIJING APOLLO DING RONG SOLAR TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20210412 Address after: 518054 Room 201, building A, 1 front Bay Road, Shenzhen Qianhai cooperation zone, Shenzhen, Guangdong Applicant after: Shenzhen Zhengyue development and Construction Co.,Ltd. Address before: 100076 6015, 6th floor, building 8, 9 Yingshun Road, Yinghai Town, Daxing District, Beijing Applicant before: Beijing Dingrong Photovoltaic Technology Co.,Ltd. |
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Application publication date: 20200529 |
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