CN103871851B - 一种铜铟镓硒薄膜电池共蒸发线性源阵列的排布 - Google Patents

一种铜铟镓硒薄膜电池共蒸发线性源阵列的排布 Download PDF

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CN103871851B
CN103871851B CN201210551576.8A CN201210551576A CN103871851B CN 103871851 B CN103871851 B CN 103871851B CN 201210551576 A CN201210551576 A CN 201210551576A CN 103871851 B CN103871851 B CN 103871851B
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李鸿儒
于大洋
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Zishi Energy Co.,Ltd.
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Abstract

本发明涉及一种铜铟镓硒薄膜电池工艺，尤其涉及一种铜铟镓硒薄膜电池共蒸发工艺中线性源阵列的排布，包括玻璃基板和线性蒸发源，包含不同原料的线性蒸发源沿玻璃基板的移动方向纵向排列，组成线性蒸发源列，线性蒸发源列为一列，位于玻璃基板的正下方。线性蒸发源为圆柱体或者长方体，其上设有狭长缝状的蒸发带或者设有点状的蒸发孔。本发明能够有效的按照预设的工艺配比设定蒸发区，大幅提高电池生产工艺中原料配比的调节灵活性。

Description

一种铜铟镓硒薄膜电池共蒸发线性源阵列的排布
技术领域
本发明涉及一种铜铟镓硒薄膜电池工艺，尤其涉及一种铜铟镓硒薄膜电池共蒸发工艺中线性源阵列的排布。
背景技术
光伏应用的未来市场发展，特别是与电网相连的光伏电厂的应用，关键取决于降低太阳能电池生产成本的潜力。薄膜太阳能电池生产过程能耗低，具备大幅度降低原材料和制造成本的潜力；同时，薄膜太阳能电池在弱光条件下仍可发电。因此，目前市场对薄膜太阳能电池的需求正逐渐增长，而制造薄膜太阳能电池的技术更成为近年来的研究热点。
现在的光伏薄膜电池可分为硅基薄膜电池、碲化镉薄膜电池和铜铟镓硒薄膜电池。其中，铜铟镓硒薄膜电池是以普通钠钙玻璃溅射钼金属为衬底，通过共蒸发或溅射金属预制层后硒化法制备薄膜电池的铜铟镓硒吸收层，再经过化学水浴沉积硫化镉缓冲层、本征氧化锌高阻层、溅射掺铝氧化锌低阻层、蒸发镍/铝电极、蒸发氟化镁减反膜等工序，制备出铜铟镓硒化合物薄膜太阳能电池。由于铜铟镓硒薄膜电池对可见光的吸收系数为所有薄膜电池材料中最高的，而原材料的消耗却远低于传统晶体硅太阳电池。与高效率高成本的晶体硅太阳电池和低效率低成本的非晶硅太阳电池相比，铜铟镓硒薄膜电池具有高效率低成本长寿命的多重优势，是最有希望降低光伏发电成本的高效薄膜太阳电池。
在铜铟镓硒薄膜电池的构成中铜铟镓硒吸收层是该种薄膜太阳能电池的核心。目前，铜铟镓硒薄膜电池的吸收层已有多种沉积方法，薄膜电池效率能稳定超过10%的吸收层制备工艺主要有：共蒸发法和预制层溅射后硒化法。其中，共蒸发法，即将制备薄膜所需的铜、铟、镓、硒原料在真空环境中加热共蒸发，通过不同元素的组合反应而制备薄膜电池吸收层的工艺方法。共蒸发的特点是小面积薄膜质量好，质量与带隙容易控制，薄膜电池效率高；如果一旦实施大面积多元素共蒸发，对蒸发设备要求苛刻，蒸发过程不易控制，且均匀性不好把握，薄膜中元素分布与带隙梯度就更不易控制。
目前根据蒸发源的不同，共蒸发工艺可分为点源式与线源式两种。点源式为各蒸发源分成两列排布在玻璃基板两侧的下方，铜、铟、镓等各原料每样放在一个蒸发源中，其镀膜灵活度不高，无法实现某些特殊的配比工艺。线源式为以条状方式横列在玻璃基板的行进路线上，铜、铟、镓等原料混合放置在同一个蒸发源里，同样无法实现镀膜时的灵活配比工艺。
因此，目前市场上亟需一种能够有效灵活地调节铜铟镓硒共蒸发镀膜原料配比的方法。
发明内容
本发明目的在于提供一种能够灵活调节铜铟镓硒共蒸发镀膜原料配比，提高玻璃基板镀膜均匀性的方法，实现铜铟镓硒薄膜电池镀膜均匀，原料配比可调节，提高电池生产工艺上原料配比调节的灵活性。
本发明的目的通过下述技术方案实现：
一种铜铟镓硒薄膜电池共蒸发线性源阵列的排布，包括玻璃基板和线性蒸发源，包含不同原料的所述线性蒸发源沿玻璃基板的移动方向纵向排列，组成线性蒸发源列。
所述线性蒸发源列为一列，位于玻璃基板的正下方。
所述线性蒸发源为圆柱体或者长方体。
所述线性蒸发源上设有狭长缝状的蒸发带或者点状的蒸发孔。
所述线性蒸发源上设置有若干条相互平行的狭长缝状的蒸发带或者设置有点状的蒸发孔矩形阵列。
沿所述玻璃基板两边的下侧各对应一条蒸发带或者一列蒸发孔，可以进一步提高玻璃基板镀膜的均匀性，在垂直玻璃基板移动的方向上使得蒸发的原料可以均匀到达玻璃基板的表面。
所述每条相互平行的狭长缝状的蒸发带或者沿玻璃基板移动方向每列点状的蒸发孔分别对应有单独的加热源。
组成所述线性蒸发源列的每个线性蒸发源中的原料为单独的一种金属。
本发明提供的铜铟镓硒薄膜电池共蒸发线性源阵列的排布与现有技术相比，由于包含不同原料的线性蒸发源沿玻璃基板的移动方向纵向排列，组成一列线性蒸发源列，位于玻璃基板的正下方，线性蒸发源上设置有若干条相互平行的狭长缝状的蒸发带或者设置有点状的蒸发孔矩形阵列，沿玻璃基板两边的下侧各对应一条蒸发带或者蒸发孔列，每条相互平行的狭长缝状的蒸发带或者沿玻璃基板移动方向每列点状的蒸发孔分别对应有单独的加热源，组成线性蒸发源列的每个线性蒸发源中的原料为单独的一种金属，技术人员可以通过调节玻璃基板运行方向线性蒸发源中原料的种类和位置，线性蒸发源上设置的相互平行的狭长缝状的蒸发带的条数或者点状的蒸发孔矩形阵列沿玻璃基板运行方向的列数，以及控制每条线性蒸发源对应发热源的温度，有效的按照预设的工艺配比布置、设定蒸发区，大幅提高电池生产工艺中原料配比的调节灵活性。当工艺发生改变，需要改变原料比例时，工艺人员可以通过调节线性蒸发源中原料的排列分布，选择设置不同条数的线性蒸发源上的蒸发带或者沿玻璃基板运行方向不同列数的线性蒸发源蒸发孔，改变每条线性蒸发源蒸发带或者沿玻璃基板移动方向每列蒸发孔对应加热源的加热温度等方式，改变各原料蒸汽的配比，从而最终达到工艺调节的目的。
具体来讲，当开始进行共蒸发工艺时，线性蒸发源一起加热。每条线性蒸发源上的蒸发带或者沿玻璃基板移动方向每列蒸发孔都对应有单独的加热源，当玻璃基板进行蒸发工艺时，可独立对线性蒸发源的加热源进行控制。通过控制加热源的温度，以及选择设置相互平行的线性蒸发源上的蒸发带的条数或者蒸发孔矩形阵列沿玻璃基板运行方向的列数，使得铜、铟、镓三种原料蒸汽按照预设的原料配比均匀充满蒸发区。而且包含不同原料的线性蒸发源在玻璃基板的移动方向上纵向排成一列，位于玻璃基板的正下方，可以通过排列玻璃基板行进方向上不同线性蒸发源所包含的原料种类，调节各种原料在玻璃基板上的镀膜先后顺序，使之达到预设的工艺要求。
附图说明
图1是本发明的铜铟镓硒薄膜电池共蒸发线性源阵列的排布侧视图的示意图。
图2是本发明的铜铟镓硒薄膜电池共蒸发线性源上的狭长缝状的蒸发带的俯视图的示意图。
图3是本发明的铜铟镓硒薄膜电池共蒸发线性源上的点状的蒸发孔的俯视图的示意图。
具体实施方式
下面通过实施例，并结合附图，对本发明的技术方案作进一步详细的说明，但不限于实施例的内容。
实施例1
一种铜铟镓硒薄膜电池共蒸发线性源阵列的排布，如图1、图2所示，包括玻璃基板1和线性蒸发源2、3、4，包含不同原料的线性蒸发源2、3、4沿玻璃基板1的移动方向纵向排列，组成线性蒸发源列，线性蒸发源列为一列，位于玻璃基板1的正下方。线性蒸发源2、3、4为长方体。线性蒸发源2、3、4上设置有三条相互平行的狭长缝状的蒸发带5。沿玻璃基板1两边的下侧各对应有一条蒸发带5。三条相互平行的狭长缝状的蒸发带5分别对应有三条单独的加热源。组成线性蒸发源列的每个线性蒸发源中的原料为单独的一种金属，线性蒸发源2为铜，线性蒸发源3为铟，线性蒸发源4为镓。
实施例2
一种铜铟镓硒薄膜电池共蒸发线性源阵列的排布，如图1、图3所示，包括玻璃基板1和线性蒸发源2、3、4，包含不同原料的线性蒸发源2、3、4沿玻璃基板1的移动方向纵向排列，组成线性蒸发源列，线性蒸发源列为一列，位于玻璃基板1的正下方。线性蒸发源2、3、4为圆柱体。线性蒸发源2、3、4上设置有点状的蒸发孔6阵列，点状的蒸发孔6沿玻璃基板运行方向分为3列。沿玻璃基板1两边的下侧各对应一列点状的蒸发孔6。沿玻璃基板移动方向三列相互平行的点状的蒸发孔6分别对应三条单独的加热源。组成线性蒸发源列的每个线性蒸发源中的原料为单独的一种金属，线性蒸发源2为镓，线性蒸发源3为铟，线性蒸发源4为铜。

Claims (7)

1.一种铜铟镓硒薄膜电池共蒸发线性源阵列的排布，包括玻璃基板和线性蒸发源，其特征在于，包含不同原料的所述线性蒸发源沿玻璃基板的移动方向纵向排列，组成线性蒸发源列，所述线性蒸发源上设有狭长缝状的蒸发带。
2.根据权利要求1所述的铜铟镓硒薄膜电池共蒸发线性源阵列的排布，其特征在于，所述线性蒸发源列为一列，位于玻璃基板的正下方。
3.根据权利要求1所述的铜铟镓硒薄膜电池共蒸发线性源阵列的排布，其特征在于，所述线性蒸发源为长方体。
4.根据权利要求1所述的铜铟镓硒薄膜电池共蒸发线性源阵列的排布，其特征在于，所述线性蒸发源上设置有若干条相互平行的狭长缝状的蒸发带。
5.根据权利要求4所述的铜铟镓硒薄膜电池共蒸发线性源阵列的排布，其特征在于，沿所述玻璃基板两边的下侧各对应一条蒸发带。
6.根据权利要求4所述的铜铟镓硒薄膜电池共蒸发线性源阵列的排布，其特征在于，每条所述相互平行的狭长缝状的蒸发带分别对应有单独的加热源。
7.根据权利要求1-6中任意一项所述的铜铟镓硒薄膜电池共蒸发线性源阵列的排布，其特征在于，组成所述线性蒸发源列的每个线性蒸发源中的原料为单独的一种金属。
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