IN2014MN01916A - - Google Patents

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Publication number
IN2014MN01916A
IN2014MN01916A IN1916MUN2014A IN2014MN01916A IN 2014MN01916 A IN2014MN01916 A IN 2014MN01916A IN 1916MUN2014 A IN1916MUN2014 A IN 1916MUN2014A IN 2014MN01916 A IN2014MN01916 A IN 2014MN01916A
Authority
IN
India
Prior art keywords
convex
parts
convex parts
pave
emitting element
Prior art date
Application number
Other languages
English (en)
Inventor
Jun Koike
Yoshimichi Mitamura
Fujito Yamaguchi
Original Assignee
Asahi Kasei E Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Kasei E Materials Corp filed Critical Asahi Kasei E Materials Corp
Publication of IN2014MN01916A publication Critical patent/IN2014MN01916A/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)
IN1916MUN2014 2012-04-02 2013-03-29 IN2014MN01916A (de)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2012084208 2012-04-02
JP2012103489 2012-04-27
JP2012103490 2012-04-27
JP2012227295 2012-10-12
JP2012267488 2012-12-06
JP2012267377 2012-12-06
JP2012280241 2012-12-21
PCT/JP2013/059635 WO2013150984A1 (ja) 2012-04-02 2013-03-29 光学基板、半導体発光素子及び半導体発光素子の製造方法

Publications (1)

Publication Number Publication Date
IN2014MN01916A true IN2014MN01916A (de) 2015-07-10

Family

ID=49300468

Family Applications (1)

Application Number Title Priority Date Filing Date
IN1916MUN2014 IN2014MN01916A (de) 2012-04-02 2013-03-29

Country Status (10)

Country Link
US (1) US9614136B2 (de)
EP (5) EP2942819A1 (de)
JP (1) JP6235459B2 (de)
KR (2) KR101862500B1 (de)
CN (1) CN104205370B (de)
BR (1) BR112014024516A2 (de)
IN (1) IN2014MN01916A (de)
RU (1) RU2604568C2 (de)
TW (1) TWI531086B (de)
WO (1) WO2013150984A1 (de)

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JP6229707B2 (ja) 2015-11-26 2017-11-15 日亜化学工業株式会社 発光素子及びその製造方法
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CN109427940B (zh) * 2017-08-22 2020-04-24 比亚迪股份有限公司 发光二极管外延片及其制造方法
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Also Published As

Publication number Publication date
US20150048380A1 (en) 2015-02-19
JP6235459B2 (ja) 2017-11-22
KR20140133867A (ko) 2014-11-20
WO2013150984A1 (ja) 2013-10-10
CN104205370A (zh) 2014-12-10
KR20160148052A (ko) 2016-12-23
JPWO2013150984A1 (ja) 2015-12-17
TW201344959A (zh) 2013-11-01
BR112014024516A2 (pt) 2017-07-25
EP2942821A1 (de) 2015-11-11
EP2942822A1 (de) 2015-11-11
EP2835836A4 (de) 2015-08-05
US9614136B2 (en) 2017-04-04
EP2835836A1 (de) 2015-02-11
EP2942820A1 (de) 2015-11-11
EP2942819A1 (de) 2015-11-11
KR101763460B1 (ko) 2017-07-31
RU2604568C2 (ru) 2016-12-10
RU2014144362A (ru) 2016-05-27
KR101862500B1 (ko) 2018-05-29
TWI531086B (zh) 2016-04-21
CN104205370B (zh) 2017-03-22
EP2835836B1 (de) 2019-06-19

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