IN2012DN03820A - - Google Patents

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Publication number
IN2012DN03820A
IN2012DN03820A IN3820DEN2012A IN2012DN03820A IN 2012DN03820 A IN2012DN03820 A IN 2012DN03820A IN 3820DEN2012 A IN3820DEN2012 A IN 3820DEN2012A IN 2012DN03820 A IN2012DN03820 A IN 2012DN03820A
Authority
IN
India
Prior art keywords
powder
sputtering target
naf
contained
molded article
Prior art date
Application number
Other languages
English (en)
Inventor
Shoubin Zhang
Yoshinori Shirai
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=43969780&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=IN2012DN03820(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Publication of IN2012DN03820A publication Critical patent/IN2012DN03820A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/0425—Copper-based alloys
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
IN3820DEN2012 2009-11-06 2010-11-04 IN2012DN03820A (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009255540 2009-11-06
JP2010241749A JP4793504B2 (ja) 2009-11-06 2010-10-28 スパッタリングターゲット及びその製造方法
PCT/JP2010/006481 WO2011055537A1 (fr) 2009-11-06 2010-11-04 Cible de pulvérisation et son procédé de production

Publications (1)

Publication Number Publication Date
IN2012DN03820A true IN2012DN03820A (fr) 2015-08-28

Family

ID=43969780

Family Applications (1)

Application Number Title Priority Date Filing Date
IN3820DEN2012 IN2012DN03820A (fr) 2009-11-06 2010-11-04

Country Status (8)

Country Link
US (1) US8795489B2 (fr)
EP (1) EP2402482B1 (fr)
JP (1) JP4793504B2 (fr)
KR (1) KR101099416B1 (fr)
CN (1) CN102395702B (fr)
IN (1) IN2012DN03820A (fr)
TW (1) TW201126002A (fr)
WO (1) WO2011055537A1 (fr)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5877510B2 (ja) * 2010-01-07 2016-03-08 Ｊｘ金属株式会社 Ｃｕ−Ｇａ系スパッタリングターゲット、同ターゲットの製造方法、光吸収層及び該光吸収層を用いた太陽電池
JP4831258B2 (ja) * 2010-03-18 2011-12-07 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法
JP5418463B2 (ja) * 2010-10-14 2014-02-19 住友金属鉱山株式会社 Ｃｕ−Ｇａ合金スパッタリングターゲットの製造方法
JP5153911B2 (ja) * 2011-04-22 2013-02-27 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法
JP5725610B2 (ja) * 2011-04-29 2015-05-27 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法
JP2013012717A (ja) * 2011-06-03 2013-01-17 Nitto Denko Corp 太陽電池の製造方法
JP5795898B2 (ja) * 2011-07-28 2015-10-14 株式会社アルバック ＣｕＧａＮａ系スパッタリング用ターゲット
JP5795897B2 (ja) * 2011-07-28 2015-10-14 株式会社アルバック ＣｕＧａＮａ系スパッタリング用ターゲット
JP5165100B1 (ja) 2011-11-01 2013-03-21 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法
JP5919738B2 (ja) * 2011-11-10 2016-05-18 三菱マテリアル株式会社 スパッタリングターゲットおよびその製造方法
JP5999357B2 (ja) 2012-02-24 2016-09-28 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法
US8586457B1 (en) * 2012-05-17 2013-11-19 Intermolecular, Inc. Method of fabricating high efficiency CIGS solar cells
CN102751388B (zh) * 2012-07-18 2015-03-11 林刘毓 一种铜铟镓硒薄膜太阳能电池的制备方法
JP5907428B2 (ja) * 2012-07-23 2016-04-26 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法
JP2014037556A (ja) * 2012-08-10 2014-02-27 Mitsubishi Materials Corp スパッタリングターゲット及びその製造方法
JP6311912B2 (ja) * 2012-10-17 2018-04-18 三菱マテリアル株式会社 Ｃｕ−Ｇａ二元系スパッタリングターゲット及びその製造方法
AT13564U1 (de) 2013-01-31 2014-03-15 Plansee Se CU-GA-IN-NA Target
JP6365922B2 (ja) 2013-04-15 2018-08-01 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法
CN103255367B (zh) * 2013-04-28 2015-07-29 柳州百韧特先进材料有限公司 太阳能电池cigs吸收层靶材的制备方法
JP6120076B2 (ja) * 2013-08-01 2017-04-26 三菱マテリアル株式会社 Ｃｕ−Ｇａ合金スパッタリングターゲット及びその製造方法
JP5733357B2 (ja) * 2013-08-02 2015-06-10 住友金属鉱山株式会社 Ｃｕ−Ｇａ合金スパッタリングターゲット
CN105579599A (zh) * 2013-09-27 2016-05-11 攀时奥地利公司 铜镓溅射靶材
JP2015086434A (ja) * 2013-10-30 2015-05-07 住友金属鉱山株式会社 Ｃｕ−Ｇａ合金スパッタリングターゲットの製造方法
JP5973041B2 (ja) * 2014-08-28 2016-08-17 三菱マテリアル株式会社 Ｃｕ−Ｇａスパッタリングターゲット及びＣｕ−Ｇａスパッタリングターゲットの製造方法
JP6634750B2 (ja) * 2014-09-22 2020-01-22 三菱マテリアル株式会社 スパッタリングターゲット及びその製造方法
WO2016047556A1 (fr) * 2014-09-22 2016-03-31 三菱マテリアル株式会社 Cible de pulvérisation cathodique et procédé de fabrication de celle-ci
CN107406965A (zh) 2015-01-12 2017-11-28 纽升股份有限公司 可用于制造硫属化物半导体的含碱金属的前体膜的高速溅射沉积
TWI551704B (zh) * 2015-05-21 2016-10-01 China Steel Corp Copper gallium alloy composite sodium element target manufacturing method
JP6794850B2 (ja) * 2016-02-08 2020-12-02 三菱マテリアル株式会社 スパッタリングターゲット及びスパッタリングターゲットの製造方法
WO2017147037A1 (fr) 2016-02-26 2017-08-31 Dow Global Technologies Llc Procédé permettant d'améliorer la stabilité d'articles photovoltaïques incorporant des semi-conducteurs de chalcogénure
WO2018021105A1 (fr) 2016-07-29 2018-02-01 三菱マテリアル株式会社 CIBLE DE PULVÉRISATION DE Cu-Ga ET PROCÉDÉ DE PRODUCTION DE CIBLE DE PULVÉRISATION DE Cu-Ga
JP2018024933A (ja) * 2016-07-29 2018-02-15 三菱マテリアル株式会社 Ｃｕ−Ｇａスパッタリングターゲット及びＣｕ−Ｇａスパッタリングターゲットの製造方法
KR102026458B1 (ko) * 2017-05-12 2019-09-27 서울대학교산학협력단 금속 소결체의 제조방법
JP2019112671A (ja) * 2017-12-22 2019-07-11 三菱マテリアル株式会社 Ｃｕ−Ｇａ合金スパッタリングターゲット、及び、Ｃｕ−Ｇａ合金スパッタリングターゲットの製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE68916988T2 (de) * 1988-03-16 1995-03-16 Mitsui Toatsu Chemicals Verfahren zur Herstellung von gasförmigen Fluoriden.
JPH08253826A (ja) * 1994-10-19 1996-10-01 Sumitomo Electric Ind Ltd 焼結摩擦材およびそれに用いられる複合銅合金粉末とそれらの製造方法
JPH08195501A (ja) * 1995-01-18 1996-07-30 Shin Etsu Chem Co Ltd Ｉｂ−ＩＩＩｂ−ＶＩｂ族化合物半導体
JP3249408B2 (ja) 1996-10-25 2002-01-21 昭和シェル石油株式会社 薄膜太陽電池の薄膜光吸収層の製造方法及び製造装置
JP4766441B2 (ja) * 2003-09-17 2011-09-07 三菱マテリアル株式会社 半導体不揮発メモリー用相変化膜およびこの相変化膜を形成するためのスパッタリングターゲット
JP4907259B2 (ja) * 2006-08-16 2012-03-28 山陽特殊製鋼株式会社 Ｃｒを添加したＦｅＣｏＢ系ターゲット材
JP4811660B2 (ja) * 2006-11-30 2011-11-09 三菱マテリアル株式会社 高Ｇａ含有Ｃｕ−Ｇａ二元系合金スパッタリングターゲットおよびその製造方法
US9279178B2 (en) 2007-04-27 2016-03-08 Honeywell International Inc. Manufacturing design and processing methods and apparatus for sputtering targets
US20100236627A1 (en) 2007-09-28 2010-09-23 Haruo Yago Substrate for solar cell and solar cell
CN101260513B (zh) 2008-04-23 2011-04-06 王东生 太阳能电池铜铟镓硒薄膜关键靶材的制备方法
CN101397647B (zh) * 2008-11-03 2011-08-17 清华大学 铜铟镓硒或铜铟铝硒太阳能电池吸收层靶材及其制备方法
US20100116341A1 (en) * 2008-11-12 2010-05-13 Solar Applied Materials Technology Corp. Copper-gallium allay sputtering target, method for fabricating the same and related applications
JP2010225883A (ja) * 2009-03-24 2010-10-07 Honda Motor Co Ltd 薄膜太陽電池の製造方法
US9284639B2 (en) * 2009-07-30 2016-03-15 Apollo Precision Kunming Yuanhong Limited Method for alkali doping of thin film photovoltaic materials

Also Published As

Publication number Publication date
EP2402482B1 (fr) 2014-07-02
CN102395702A (zh) 2012-03-28
EP2402482A4 (fr) 2012-03-28
WO2011055537A1 (fr) 2011-05-12
JP4793504B2 (ja) 2011-10-12
US8795489B2 (en) 2014-08-05
KR20110113213A (ko) 2011-10-14
JP2011117077A (ja) 2011-06-16
CN102395702B (zh) 2013-04-10
TWI360583B (fr) 2012-03-21
EP2402482A1 (fr) 2012-01-04
KR101099416B1 (ko) 2011-12-27
TW201126002A (en) 2011-08-01
US20120217157A1 (en) 2012-08-30

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