IN2012DN00856A - - Google Patents

Info

Publication number
IN2012DN00856A
IN2012DN00856A IN856DEN2012A IN2012DN00856A IN 2012DN00856 A IN2012DN00856 A IN 2012DN00856A IN 856DEN2012 A IN856DEN2012 A IN 856DEN2012A IN 2012DN00856 A IN2012DN00856 A IN 2012DN00856A
Authority
IN
India
Application number
Other languages
English (en)
Inventor
Vijayen S Veerasamy
Original Assignee
Guardian Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guardian Industries filed Critical Guardian Industries
Publication of IN2012DN00856A publication Critical patent/IN2012DN00856A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/186—Preparation by chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/188—Preparation by epitaxial growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
IN856DEN2012 2009-08-07 2012-01-31 IN2012DN00856A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/461,346 US10167572B2 (en) 2009-08-07 2009-08-07 Large area deposition of graphene via hetero-epitaxial growth, and products including the same
PCT/US2010/001982 WO2011016828A2 (en) 2009-08-07 2010-07-15 Large area deposition of graphene hetero-epitaxial growth, and products including the same

Publications (1)

Publication Number Publication Date
IN2012DN00856A true IN2012DN00856A (ja) 2015-07-10

Family

ID=42797336

Family Applications (1)

Application Number Title Priority Date Filing Date
IN856DEN2012 IN2012DN00856A (ja) 2009-08-07 2012-01-31

Country Status (12)

Country Link
US (1) US10167572B2 (ja)
EP (2) EP2584072A3 (ja)
JP (1) JP5731502B2 (ja)
KR (1) KR101724772B1 (ja)
CN (2) CN102549202A (ja)
BR (1) BR112012008091A2 (ja)
IN (1) IN2012DN00856A (ja)
MX (1) MX338878B (ja)
RU (1) RU2012108641A (ja)
SA (1) SA110310637B1 (ja)
TW (1) TW201114683A (ja)
WO (1) WO2011016828A2 (ja)

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB201004554D0 (en) * 2010-03-18 2010-05-05 Isis Innovation Superconducting materials
US20120068161A1 (en) * 2010-09-16 2012-03-22 Lee Keon-Jae Method for forming graphene using laser beam, graphene semiconductor manufactured by the same, and graphene transistor having graphene semiconductor
CN102127750B (zh) * 2011-03-01 2012-08-22 哈尔滨工程大学 一种基于化学沉积法制备石墨烯材料的方法
KR101806916B1 (ko) * 2011-03-17 2017-12-12 한화테크윈 주식회사 그래핀 필름 제조 장치 및 그래핀 필름 제조 방법
KR101842018B1 (ko) * 2011-04-01 2018-03-26 한화테크윈 주식회사 그래핀을 포함하는 필름 제조 방법
JP5562283B2 (ja) * 2011-04-07 2014-07-30 日本写真印刷株式会社 グラフェンを主成分とする透明導電膜を備えた透明導電物とその製造方法
JP5455963B2 (ja) * 2011-04-07 2014-03-26 日本写真印刷株式会社 グラフェンを主成分とする透明導電膜を備えた転写シートとその製造方法
JP5541741B2 (ja) * 2011-04-11 2014-07-09 日本写真印刷株式会社 グラフェンを主成分とする透明導電膜を備えた転写シートとその製造方法
US8739728B2 (en) * 2011-04-07 2014-06-03 Dynamic Micro Systems, Semiconductor Equipment Gmbh Methods and apparatuses for roll-on coating
CN102719877B (zh) * 2011-06-09 2014-09-03 中国科学院金属研究所 一种低成本无损转移石墨烯的方法
KR101380835B1 (ko) * 2011-07-22 2014-04-04 성균관대학교산학협력단 그래핀의 원자층 식각 방법
CN102296361B (zh) * 2011-09-05 2013-09-25 电子科技大学 一种单晶石墨烯的制备方法
US9340430B2 (en) 2011-09-09 2016-05-17 Board Of Trustees Of Northern Illinois University Crystalline graphene and method of making crystalline graphene
KR101878739B1 (ko) 2011-10-24 2018-07-17 삼성전자주식회사 그래핀 전사부재, 그래핀 전사방법 및 이를 이용한 그래핀 소자 제조방법
JP5851804B2 (ja) * 2011-11-09 2016-02-03 東京エレクトロン株式会社 前処理方法、グラフェンの形成方法及びグラフェン製造装置
KR102107382B1 (ko) * 2012-02-24 2020-05-07 캘리포니아 인스티튜트 오브 테크놀로지 그래핀 형성 방법 및 시스템
US9527043B2 (en) * 2012-05-17 2016-12-27 Samsung Electronics Co., Ltd. Gas separation membrane and method of preparing the same
KR101920716B1 (ko) 2012-05-17 2019-02-13 삼성전자주식회사 기체 분리막 및 그 제조방법
EP2679540A1 (en) * 2012-06-29 2014-01-01 Graphenea, S.A. Method of manufacturing a graphene monolayer on insulating substrates
CN103572247A (zh) * 2012-07-27 2014-02-12 中国科学院苏州纳米技术与纳米仿生研究所 一种在金属催化剂表面制备薄层石墨烯的方法
CN102774118B (zh) * 2012-07-31 2015-05-13 无锡格菲电子薄膜科技有限公司 一种以静电保护膜为媒介转移石墨烯薄膜的方法
PL224447B1 (pl) 2012-08-25 2016-12-30 Advanced Graphene Products Spółka Z Ograniczoną Odpowiedzialnością Sposób oddzielania grafenu od ciekłej matrycy formującej
US9715247B2 (en) * 2012-10-03 2017-07-25 National University Of Singapore Touch screen devices employing graphene networks with polyvinylidene fluoride films
CN102903616A (zh) * 2012-10-22 2013-01-30 西安电子科技大学 基于ZnO衬底的石墨烯CVD直接外延生长方法及制造的器件
CN102903618B (zh) * 2012-10-22 2015-07-29 西安电子科技大学 基于AlN衬底的石墨烯CVD直接外延生长方法及制造的器件
CN102903617B (zh) * 2012-10-22 2015-09-09 西安电子科技大学 基于GaN衬底的石墨烯CVD直接外延生长方法及制造的器件
US9595436B2 (en) 2012-10-25 2017-03-14 Applied Materials, Inc. Growing graphene on substrates
CN104995332B (zh) * 2012-11-19 2017-08-08 加利福尼亚大学董事会 基于石墨烯的电极及应用
US10315275B2 (en) * 2013-01-24 2019-06-11 Wisconsin Alumni Research Foundation Reducing surface asperities
US10163576B2 (en) * 2013-02-06 2018-12-25 Apaq Technology Co., Ltd. Capacitor cathode foil structure and manufacturing method thereof
KR102049487B1 (ko) * 2013-03-08 2019-11-28 삼성디스플레이 주식회사 표시 장치의 제조 방법
US9593019B2 (en) * 2013-03-15 2017-03-14 Guardian Industries Corp. Methods for low-temperature graphene precipitation onto glass, and associated articles/devices
US10431354B2 (en) * 2013-03-15 2019-10-01 Guardian Glass, LLC Methods for direct production of graphene on dielectric substrates, and associated articles/devices
JP6002087B2 (ja) * 2013-05-29 2016-10-05 東京エレクトロン株式会社 グラフェンの生成方法
EP2865646B8 (en) 2013-10-28 2016-07-27 Advanced Graphene Products Sp. z o. o. Method of producing graphene on a liquid metal
US9284640B2 (en) 2013-11-01 2016-03-15 Advanced Graphene Products Sp. Z.O.O. Method of producing graphene from liquid metal
JP6353308B2 (ja) * 2014-07-24 2018-07-04 株式会社カネカ 配線材料、配線材料の製造方法、および配線材料を用いた配線板の製造方法
CN104409177B (zh) * 2014-11-28 2017-02-22 中国科学院金属研究所 一种稳定掺杂的大面积石墨烯透明导电膜规模化制备方法
WO2016149934A1 (zh) * 2015-03-26 2016-09-29 中国科学院上海微系统与信息技术研究所 石墨烯的生长方法
US10133428B2 (en) * 2015-05-29 2018-11-20 Samsung Display Co., Ltd. Flexible display device including a flexible substrate having a bending part and a conductive pattern at least partially disposed on the bending part
GB201514542D0 (en) * 2015-08-14 2015-09-30 Thomas Simon C S A method of producing graphene
US10145005B2 (en) 2015-08-19 2018-12-04 Guardian Glass, LLC Techniques for low temperature direct graphene growth on glass
WO2017038590A1 (ja) 2015-09-02 2017-03-09 東京エレクトロン株式会社 グラフェンの製造方法、グラフェンの製造装置及び電子デバイスの製造方法
US9666615B2 (en) 2015-10-20 2017-05-30 International Business Machines Corporation Semiconductor on insulator substrate with back bias
RU2614289C1 (ru) * 2015-11-10 2017-03-24 Федеральное государственное бюджетное учреждение науки Институт проблем технологии микроэлектроники и особочистых материалов Российской академии наук (ИПТМ РАН) Способ получения пленки графена на подложке
US10190211B2 (en) * 2015-11-20 2019-01-29 Fourté International, Sdn. Bhd High conductivity graphane-metal and graphene-metal composite and methods of manufacture
US11718529B1 (en) * 2015-11-23 2023-08-08 Paronyan Tereza M Graphene networks and methods for synthesis and use of the same
US20170155985A1 (en) * 2015-11-30 2017-06-01 Bragi GmbH Graphene Based Mesh for Use in Portable Electronic Devices
DE112018000257T5 (de) * 2017-01-11 2019-09-12 Baker Hughes, A Ge Company, Llc Dünne filmsubstrate einschliesslich vernetzter kohlenstoffnanostrukturen und verwandte verfahren
CA3073661A1 (en) 2017-08-22 2019-02-28 Ntherma Corporation Graphene nanoribbons, graphene nanoplatelets and mixtures thereof and methods of synthesis
JP6960813B2 (ja) 2017-09-20 2021-11-05 東京エレクトロン株式会社 グラフェン構造体の形成方法および形成装置
GB2570126B (en) * 2018-01-11 2022-07-27 Paragraf Ltd Graphene based contact layers for electronic devices
CN110697861A (zh) * 2019-11-13 2020-01-17 孙晓阳 活性光解微晶及其制备方法
CN114228182A (zh) * 2021-12-24 2022-03-25 中科合肥智慧农业协同创新研究院 一种快速制备石墨烯三明治型光热转换地膜的方法

Family Cites Families (111)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4929205A (en) 1988-10-07 1990-05-29 Jones Elene K Leg immobilizer-drag for training swimmers
US5227038A (en) * 1991-10-04 1993-07-13 William Marsh Rice University Electric arc process for making fullerenes
US5300203A (en) * 1991-11-27 1994-04-05 William Marsh Rice University Process for making fullerenes by the laser evaporation of carbon
US5591312A (en) * 1992-10-09 1997-01-07 William Marsh Rice University Process for making fullerene fibers
DE4313481A1 (de) * 1993-04-24 1994-10-27 Hoechst Ag Fullerenderivate, Verfahren zur Herstellung und deren Verwendung
AU7211494A (en) * 1993-06-28 1995-01-17 William Marsh Rice University Solar process for making fullerenes
US5650597A (en) * 1995-01-20 1997-07-22 Dynapro Systems, Inc. Capacitive touch sensor
US6162926A (en) * 1995-07-31 2000-12-19 Sphere Biosystems, Inc. Multi-substituted fullerenes and methods for their preparation and characterization
US6183714B1 (en) 1995-09-08 2001-02-06 Rice University Method of making ropes of single-wall carbon nanotubes
US7338915B1 (en) * 1995-09-08 2008-03-04 Rice University Ropes of single-wall carbon nanotubes and compositions thereof
EP0927331B1 (en) * 1996-08-08 2004-03-31 William Marsh Rice University Macroscopically manipulable nanoscale devices made from nanotube assemblies
US6123824A (en) * 1996-12-13 2000-09-26 Canon Kabushiki Kaisha Process for producing photo-electricity generating device
JPH10178195A (ja) 1996-12-18 1998-06-30 Canon Inc 光起電力素子
US6683783B1 (en) * 1997-03-07 2004-01-27 William Marsh Rice University Carbon fibers formed from single-wall carbon nanotubes
DE69830847T2 (de) 1997-03-07 2006-01-12 William Marsh Rice University, Houston Kohlenstofffasern ausgehend von einwandigen kohlenstoffnanoröhren
JPH1146006A (ja) * 1997-07-25 1999-02-16 Canon Inc 光起電力素子およびその製造方法
US6129901A (en) * 1997-11-18 2000-10-10 Martin Moskovits Controlled synthesis and metal-filling of aligned carbon nanotubes
GB9806066D0 (en) 1998-03-20 1998-05-20 Cambridge Display Tech Ltd Multilayer photovoltaic or photoconductive devices
EP1089938A1 (en) * 1998-06-19 2001-04-11 The Research Foundation Of State University Of New York Free-standing and aligned carbon nanotubes and synthesis thereof
US6077722A (en) * 1998-07-14 2000-06-20 Bp Solarex Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts
US6204897B1 (en) * 1998-08-18 2001-03-20 International Business Machines Corporation Integrated resistor for measuring touch position in a liquid crystal display device
US6057903A (en) * 1998-08-18 2000-05-02 International Business Machines Corporation Liquid crystal display device employing a guard plane between a layer for measuring touch position and common electrode layer
US6692717B1 (en) * 1999-09-17 2004-02-17 William Marsh Rice University Catalytic growth of single-wall carbon nanotubes from metal particles
DE69941294D1 (de) * 1998-09-18 2009-10-01 Univ Rice William M Chemische derivatisierung von einwandigen kohlenstoffnanoröhren um ihre solvatation zu erleichtern und verwendung derivatisierter nanoröhren
KR20070091696A (ko) 1998-09-18 2007-09-11 윌리엄 마쉬 라이스 유니버시티 탄소 나노튜브들의 로프
US7125534B1 (en) * 1998-09-18 2006-10-24 William Marsh Rice University Catalytic growth of single- and double-wall carbon nanotubes from metal particles
US6835366B1 (en) 1998-09-18 2004-12-28 William Marsh Rice University Chemical derivatization of single-wall carbon nanotubes to facilitate solvation thereof, and use of derivatized nanotubes
CA2350099C (en) * 1998-11-03 2008-05-20 William Marsh Rice University Gas-phase nucleation and growth of single-wall carbon nanotubes from high pressure co
US6808606B2 (en) * 1999-05-03 2004-10-26 Guardian Industries Corp. Method of manufacturing window using ion beam milling of glass substrate(s)
US6790425B1 (en) * 1999-10-27 2004-09-14 Wiliam Marsh Rice University Macroscopic ordered assembly of carbon nanotubes
US7195780B2 (en) * 2002-10-21 2007-03-27 University Of Florida Nanoparticle delivery system
WO2002016257A2 (en) * 2000-08-24 2002-02-28 William Marsh Rice University Polymer-wrapped single wall carbon nanotubes
US6359388B1 (en) * 2000-08-28 2002-03-19 Guardian Industries Corp. Cold cathode ion beam deposition apparatus with segregated gas flow
US6784361B2 (en) * 2000-09-20 2004-08-31 Bp Corporation North America Inc. Amorphous silicon photovoltaic devices
US6913789B2 (en) * 2001-01-31 2005-07-05 William Marsh Rice University Process utilizing pre-formed cluster catalysts for making single-wall carbon nanotubes
US7052668B2 (en) * 2001-01-31 2006-05-30 William Marsh Rice University Process utilizing seeds for making single-wall carbon nanotubes
US7090819B2 (en) * 2001-02-12 2006-08-15 William Marsh Rice University Gas-phase process for purifying single-wall carbon nanotubes and compositions thereof
US6752977B2 (en) * 2001-02-12 2004-06-22 William Marsh Rice University Process for purifying single-wall carbon nanotubes and compositions thereof
US6602371B2 (en) * 2001-02-27 2003-08-05 Guardian Industries Corp. Method of making a curved vehicle windshield
KR20010094773A (ko) 2001-03-16 2001-11-03 장광식 정윤철 편광판 일체형 터치 패널 및 터치 패널 일체형 평판디스플레이 그리고 적층 방법
US7265174B2 (en) * 2001-03-22 2007-09-04 Clemson University Halogen containing-polymer nanocomposite compositions, methods, and products employing such compositions
US6890506B1 (en) * 2001-04-12 2005-05-10 Penn State Research Foundation Method of forming carbon fibers
AU2002363352A1 (en) * 2001-06-15 2003-05-19 The Pennsylvania State Research Foundation Method of purifying nanotubes and nanofibers using electromagnetic radiation
US7125502B2 (en) 2001-07-06 2006-10-24 William Marsh Rice University Fibers of aligned single-wall carbon nanotubes and process for making the same
DE60229955D1 (de) * 2001-08-29 2009-01-02 Georgia Tech Res Inst Zusammensetzungen, welche stäbchenförmige polymere und nanoröhrenförmige strukturen umfassen, sowie verfahren zur herstellung derselben
US6538153B1 (en) * 2001-09-25 2003-03-25 C Sixty Inc. Method of synthesis of water soluble fullerene polyacids using a macrocyclic malonate reactant
DE10228523B4 (de) * 2001-11-14 2017-09-21 Lg Display Co., Ltd. Berührungstablett
US7138100B2 (en) * 2001-11-21 2006-11-21 William Marsh Rice Univesity Process for making single-wall carbon nanotubes utilizing refractory particles
AU2002357360A1 (en) * 2001-12-28 2003-07-24 The Penn State Research Foundation Method for low temperature synthesis of single wall carbon nanotubes
TW200307563A (en) * 2002-02-14 2003-12-16 Sixty Inc C Use of BUCKYSOME or carbon nanotube for drug delivery
AU2003216481A1 (en) * 2002-03-01 2003-09-16 Planar Systems, Inc. Reflection resistant touch screens
US7074310B2 (en) * 2002-03-04 2006-07-11 William Marsh Rice University Method for separating single-wall carbon nanotubes and compositions thereof
EP1370489B1 (en) 2002-03-14 2014-03-12 Samsung Electronics Co., Ltd. Composite materials comprising polycarbonate and single-wall carbon nanotubes
US6899945B2 (en) * 2002-03-19 2005-05-31 William Marsh Rice University Entangled single-wall carbon nanotube solid material and methods for making same
US7192642B2 (en) * 2002-03-22 2007-03-20 Georgia Tech Research Corporation Single-wall carbon nanotube film having high modulus and conductivity and process for making the same
US7135160B2 (en) * 2002-04-02 2006-11-14 Carbon Nanotechnologies, Inc. Spheroidal aggregates comprising single-wall carbon nanotubes and method for making the same
JP2005522398A (ja) * 2002-04-08 2005-07-28 ウィリアム・マーシュ・ライス・ユニバーシティ フッ素化を介して単層カーボンナノチューブを切断する方法
US6852410B2 (en) * 2002-07-01 2005-02-08 Georgia Tech Research Corporation Macroscopic fiber comprising single-wall carbon nanotubes and acrylonitrile-based polymer and process for making the same
US7061749B2 (en) * 2002-07-01 2006-06-13 Georgia Tech Research Corporation Supercapacitor having electrode material comprising single-wall carbon nanotubes and process for making the same
US7250148B2 (en) * 2002-07-31 2007-07-31 Carbon Nanotechnologies, Inc. Method for making single-wall carbon nanotubes using supported catalysts
KR100480823B1 (ko) * 2002-11-14 2005-04-07 엘지.필립스 엘시디 주식회사 표시장치용 터치 패널
US7273095B2 (en) * 2003-03-11 2007-09-25 United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Nanoengineered thermal materials based on carbon nanotube array composites
DE602004010506D1 (de) 2003-04-24 2008-01-17 Carbon Nanotechnologies Inc Leitfähiger kohlenstoff-nanoröhrenpolymerverbundstoff
US7220818B2 (en) * 2003-08-20 2007-05-22 The Regents Of The University Of California Noncovalent functionalization of nanotubes
US7109581B2 (en) * 2003-08-25 2006-09-19 Nanoconduction, Inc. System and method using self-assembled nano structures in the design and fabrication of an integrated circuit micro-cooler
US8153240B2 (en) 2003-10-03 2012-04-10 College Of William And Mary Carbon nanostructures and methods of making and using the same
US7163956B2 (en) * 2003-10-10 2007-01-16 C Sixty Inc. Substituted fullerene compositions and their use as antioxidants
US7211795B2 (en) * 2004-02-06 2007-05-01 California Institute Of Technology Method for manufacturing single wall carbon nanotube tips
KR100995073B1 (ko) 2004-04-23 2010-11-18 삼성에스디아이 주식회사 염료감응 태양전지의 모듈 및 그 제조방법
US7279916B2 (en) * 2004-10-05 2007-10-09 Nanoconduction, Inc. Apparatus and test device for the application and measurement of prescribed, predicted and controlled contact pressure on wires
WO2006077136A2 (de) 2005-01-20 2006-07-27 Schott Ag Elssktro-optisches element mit gesteuerter, insbesondere uniformer funktionali tätsverssilung
JP5054896B2 (ja) 2005-03-28 2012-10-24 勝 堀 カーボンナノウォールの処理方法、カーボンナノウォール、カーボンナノウォールデバイス
JP4522320B2 (ja) 2005-05-31 2010-08-11 株式会社エフ・ティ・エスコーポレーション 透明断熱積層体の製造方法
RU2292409C1 (ru) 2005-11-07 2007-01-27 Пензенский государственный университет (ПГУ) Способ электроосаждения покрытий сплавом никель-хром
US7619257B2 (en) * 2006-02-16 2009-11-17 Alcatel-Lucent Usa Inc. Devices including graphene layers epitaxially grown on single crystal substrates
US20080169021A1 (en) * 2007-01-16 2008-07-17 Guardian Industries Corp. Method of making TCO front electrode for use in photovoltaic device or the like
US7964238B2 (en) * 2007-01-29 2011-06-21 Guardian Industries Corp. Method of making coated article including ion beam treatment of metal oxide protective film
JP5135825B2 (ja) 2007-02-21 2013-02-06 富士通株式会社 グラフェントランジスタ及びその製造方法
US20080238882A1 (en) 2007-02-21 2008-10-02 Ramesh Sivarajan Symmetric touch screen system with carbon nanotube-based transparent conductive electrode pairs
JP4669957B2 (ja) 2007-03-02 2011-04-13 日本電気株式会社 グラフェンを用いる半導体装置及びその製造方法
US7858876B2 (en) 2007-03-13 2010-12-28 Wisconsin Alumni Research Foundation Graphite-based photovoltaic cells
US20080245414A1 (en) 2007-04-09 2008-10-09 Shuran Sheng Methods for forming a photovoltaic device with low contact resistance
WO2008128554A1 (en) 2007-04-20 2008-10-30 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Highly conductive, transparent carbon films as electrode materials
US20080308147A1 (en) 2007-06-12 2008-12-18 Yiwei Lu Rear electrode structure for use in photovoltaic device such as CIGS/CIS photovoltaic device and method of making same
US7875945B2 (en) * 2007-06-12 2011-01-25 Guardian Industries Corp. Rear electrode structure for use in photovoltaic device such as CIGS/CIS photovoltaic device and method of making same
RU2353961C1 (ru) 2007-06-25 2009-04-27 Институт прикладной физики РАН Фазоконтрастное устройство для визуализации прозрачных объектов
JP5101200B2 (ja) 2007-07-31 2012-12-19 三菱重工業株式会社 光電変換装置の製造方法
US20090032098A1 (en) * 2007-08-03 2009-02-05 Guardian Industries Corp. Photovoltaic device having multilayer antireflective layer supported by front substrate
KR20090026568A (ko) 2007-09-10 2009-03-13 삼성전자주식회사 그라펜 시트 및 그의 제조방법
KR101384665B1 (ko) 2007-09-13 2014-04-15 성균관대학교산학협력단 그라펜 시트를 함유하는 투명 전극, 이를 채용한 표시소자및 태양전지
US8587559B2 (en) 2007-09-28 2013-11-19 Samsung Electronics Co., Ltd. Multipoint nanostructure-film touch screen
US20090174435A1 (en) 2007-10-01 2009-07-09 University Of Virginia Monolithically-Integrated Graphene-Nano-Ribbon (GNR) Devices, Interconnects and Circuits
WO2009049375A1 (en) 2007-10-19 2009-04-23 University Of Wollongong Process for the preparation of graphene
KR100923304B1 (ko) 2007-10-29 2009-10-23 삼성전자주식회사 그라펜 시트 및 그의 제조방법
KR101622306B1 (ko) 2009-10-29 2016-05-19 삼성전자주식회사 그라펜 시트, 이를 포함하는 그라펜 기재 및 그의 제조방법
US8659009B2 (en) 2007-11-02 2014-02-25 The Trustees Of Columbia University In The City Of New York Locally gated graphene nanostructures and methods of making and using
KR101344493B1 (ko) 2007-12-17 2013-12-24 삼성전자주식회사 단결정 그라펜 시트 및 그의 제조방법
KR101586619B1 (ko) 2007-12-20 2016-01-21 시마 나노 테크 이스라엘 리미티드 충전제 재료를 포함하는 투명한 전도성 코팅
WO2009094277A2 (en) 2008-01-14 2009-07-30 The Regents Of The University Of California High-throughput solution processing of large scale graphene and device applications
US8535553B2 (en) 2008-04-14 2013-09-17 Massachusetts Institute Of Technology Large-area single- and few-layer graphene on arbitrary substrates
CN100552981C (zh) 2008-06-17 2009-10-21 四川大学 一种柔性碲化镉薄膜太阳电池制造方法
CN101423109A (zh) 2008-12-09 2009-05-06 张越明 船用gps/gsm防水自动报警装置
JP5097172B2 (ja) 2009-06-23 2012-12-12 株式会社沖データ グラフェン層の剥離方法、グラフェンウエハの製造方法、及び、グラフェン素子の製造方法
KR101622304B1 (ko) 2009-08-05 2016-05-19 삼성전자주식회사 그라펜 기재 및 그의 제조방법
KR101636442B1 (ko) 2009-11-10 2016-07-21 삼성전자주식회사 촉매합금을 이용한 그라핀의 제조방법
KR101652787B1 (ko) 2009-11-12 2016-09-01 삼성전자주식회사 대면적 그라핀의 제조방법 및 전사방법
KR101603766B1 (ko) 2009-11-13 2016-03-15 삼성전자주식회사 그라펜 적층체 및 그의 제조방법
JP2011157241A (ja) 2010-02-03 2011-08-18 Central Glass Co Ltd 自動車用合わせガラス
JP5660425B2 (ja) 2010-03-04 2015-01-28 独立行政法人物質・材料研究機構 グラフェン膜のエピタキシャル成長方法
JPWO2012153803A1 (ja) 2011-05-10 2014-07-31 国際先端技術総合研究所株式会社 窓用ガラス板
JP6049613B2 (ja) 2011-06-06 2016-12-21 ｉｎＱｓ株式会社 複合ガラス板

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RU2012108641A (ru) 2013-09-20
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