IL66784A - System for depositing amorphous silicon alloy layers on a substrate - Google Patents

System for depositing amorphous silicon alloy layers on a substrate

Info

Publication number
IL66784A
IL66784A IL66784A IL6678482A IL66784A IL 66784 A IL66784 A IL 66784A IL 66784 A IL66784 A IL 66784A IL 6678482 A IL6678482 A IL 6678482A IL 66784 A IL66784 A IL 66784A
Authority
IL
Israel
Prior art keywords
layers
chambers
substrate
amorphous silicon
chamber
Prior art date
Application number
IL66784A
Other languages
English (en)
Other versions
IL66784A0 (en
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23184044&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=IL66784(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of IL66784A0 publication Critical patent/IL66784A0/xx
Publication of IL66784A publication Critical patent/IL66784A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Chemically Coating (AREA)
IL66784A 1981-09-28 1982-09-13 System for depositing amorphous silicon alloy layers on a substrate IL66784A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/306,146 US4438723A (en) 1981-09-28 1981-09-28 Multiple chamber deposition and isolation system and method

Publications (2)

Publication Number Publication Date
IL66784A0 IL66784A0 (en) 1982-12-31
IL66784A true IL66784A (en) 1985-09-29

Family

ID=23184044

Family Applications (1)

Application Number Title Priority Date Filing Date
IL66784A IL66784A (en) 1981-09-28 1982-09-13 System for depositing amorphous silicon alloy layers on a substrate

Country Status (16)

Country Link
US (1) US4438723A (xx)
EP (1) EP0076426B1 (xx)
JP (1) JPS5870524A (xx)
KR (1) KR900007042B1 (xx)
AT (1) ATE23883T1 (xx)
AU (1) AU552270B2 (xx)
BR (1) BR8205600A (xx)
CA (1) CA1186280A (xx)
DE (1) DE3274470D1 (xx)
ES (2) ES8400635A1 (xx)
IE (1) IE53843B1 (xx)
IL (1) IL66784A (xx)
IN (1) IN157462B (xx)
PH (1) PH18998A (xx)
PT (1) PT75612B (xx)
ZA (1) ZA826615B (xx)

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JPS60149119A (ja) * 1984-01-13 1985-08-06 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
EP0150798B1 (en) 1984-01-23 1989-05-31 Energy Conversion Devices, Inc. Liquid crystal displays operated by amorphous silicon alloy diodes
US6784033B1 (en) 1984-02-15 2004-08-31 Semiconductor Energy Laboratory Co., Ltd. Method for the manufacture of an insulated gate field effect semiconductor device
AU584607B2 (en) * 1984-02-17 1989-06-01 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Film forming method and apparatus
US4514437A (en) * 1984-05-02 1985-04-30 Energy Conversion Devices, Inc. Apparatus for plasma assisted evaporation of thin films and corresponding method of deposition
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US4749588A (en) * 1984-09-07 1988-06-07 Nobuhiro Fukuda Process for producing hydrogenated amorphous silicon thin film and a solar cell
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JPS63262472A (ja) * 1987-04-20 1988-10-28 Sanyo Electric Co Ltd 膜形成方法
US5155565A (en) * 1988-02-05 1992-10-13 Minnesota Mining And Manufacturing Company Method for manufacturing an amorphous silicon thin film solar cell and Schottky diode on a common substrate
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US5053625A (en) * 1988-08-04 1991-10-01 Minnesota Mining And Manufacturing Company Surface characterization apparatus and method
US5001939A (en) * 1988-08-04 1991-03-26 Minnesota Mining And Manufacturing Co. Surface characterization apparatus and method
US5071670A (en) * 1990-06-11 1991-12-10 Kelly Michael A Method for chemical vapor deposition under a single reactor vessel divided into separate reaction chambers each with its own depositing and exhausting means
US5281541A (en) * 1990-09-07 1994-01-25 Canon Kabushiki Kaisha Method for repairing an electrically short-circuited semiconductor device, and process for producing a semiconductor device utilizing said method
TW237562B (xx) * 1990-11-09 1995-01-01 Semiconductor Energy Res Co Ltd
JP2824808B2 (ja) * 1990-11-16 1998-11-18 キヤノン株式会社 マイクロ波プラズマｃｖｄ法による大面積の機能性堆積膜を連続的に形成する装置
US5629054A (en) * 1990-11-20 1997-05-13 Canon Kabushiki Kaisha Method for continuously forming a functional deposit film of large area by micro-wave plasma CVD method
JP2810532B2 (ja) * 1990-11-29 1998-10-15 キヤノン株式会社 堆積膜形成方法及び堆積膜形成装置
US6979840B1 (en) 1991-09-25 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having anodized metal film between the gate wiring and drain wiring
US5919310A (en) * 1991-10-07 1999-07-06 Canon Kabushiki Kaisha Continuously film-forming apparatus provided with improved gas gate means
JP3073327B2 (ja) * 1992-06-30 2000-08-07 キヤノン株式会社 堆積膜形成方法
DE4324320B4 (de) * 1992-07-24 2006-08-31 Fuji Electric Co., Ltd., Kawasaki Verfahren und Vorrichtung zur Herstellung einer als dünne Schicht ausgebildeten fotovoltaischen Umwandlungsvorrichtung
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US6835523B1 (en) * 1993-05-09 2004-12-28 Semiconductor Energy Laboratory Co., Ltd. Apparatus for fabricating coating and method of fabricating the coating
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US6159763A (en) * 1996-09-12 2000-12-12 Canon Kabushiki Kaisha Method and device for forming semiconductor thin film, and method and device for forming photovoltaic element
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US6863835B1 (en) 2000-04-25 2005-03-08 James D. Carducci Magnetic barrier for plasma in chamber exhaust
JP2003133230A (ja) * 2001-10-29 2003-05-09 Mitsubishi Heavy Ind Ltd フレキシブル基板の半導体処理装置
DE10163394A1 (de) * 2001-12-21 2003-07-03 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden kristalliner Schichten und auf kristallinen Substraten
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US7368368B2 (en) * 2004-08-18 2008-05-06 Cree, Inc. Multi-chamber MOCVD growth apparatus for high performance/high throughput
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Also Published As

Publication number Publication date
JPH0338731B2 (xx) 1991-06-11
PT75612A (en) 1982-10-01
EP0076426A2 (en) 1983-04-13
IN157462B (xx) 1986-04-05
JPS5870524A (ja) 1983-04-27
EP0076426A3 (en) 1984-07-25
PT75612B (en) 1984-10-29
EP0076426B1 (en) 1986-11-26
PH18998A (en) 1985-12-03
AU552270B2 (en) 1986-05-29
DE3274470D1 (en) 1987-01-15
KR900007042B1 (ko) 1990-09-27
ATE23883T1 (de) 1986-12-15
ES522825A0 (es) 1984-09-16
ES8407626A1 (es) 1984-09-16
IL66784A0 (en) 1982-12-31
CA1186280A (en) 1985-04-30
ES516034A0 (es) 1983-10-16
ZA826615B (en) 1983-08-31
IE822164L (en) 1983-03-28
US4438723A (en) 1984-03-27
AU8813682A (en) 1983-04-14
ES8400635A1 (es) 1983-10-16
IE53843B1 (en) 1989-03-15
BR8205600A (pt) 1983-08-30

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Legal Events

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NE Application for restoration - patent lapsed through non-payment of renewal fees (section 60, patents law, 5727-1967)
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