PT75612B - Multiple chamber deposition and isolation system and method - Google Patents

Multiple chamber deposition and isolation system and method

Info

Publication number
PT75612B
PT75612B PT75612A PT7561282A PT75612B PT 75612 B PT75612 B PT 75612B PT 75612 A PT75612 A PT 75612A PT 7561282 A PT7561282 A PT 7561282A PT 75612 B PT75612 B PT 75612B
Authority
PT
Portugal
Prior art keywords
layers
chambers
chamber
deposition
conductivity
Prior art date
Application number
PT75612A
Other languages
English (en)
Other versions
PT75612A (en
Inventor
Vincent D Cannella
Masatsugu Izu
Stephen J Hudgens
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23184044&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=PT75612(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of PT75612A publication Critical patent/PT75612A/pt
Publication of PT75612B publication Critical patent/PT75612B/pt

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Chemically Coating (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
PT75612A 1981-09-28 1982-09-27 Multiple chamber deposition and isolation system and method PT75612B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/306,146 US4438723A (en) 1981-09-28 1981-09-28 Multiple chamber deposition and isolation system and method

Publications (2)

Publication Number Publication Date
PT75612A PT75612A (en) 1982-10-01
PT75612B true PT75612B (en) 1984-10-29

Family

ID=23184044

Family Applications (1)

Application Number Title Priority Date Filing Date
PT75612A PT75612B (en) 1981-09-28 1982-09-27 Multiple chamber deposition and isolation system and method

Country Status (16)

Country Link
US (1) US4438723A (pt)
EP (1) EP0076426B1 (pt)
JP (1) JPS5870524A (pt)
KR (1) KR900007042B1 (pt)
AT (1) ATE23883T1 (pt)
AU (1) AU552270B2 (pt)
BR (1) BR8205600A (pt)
CA (1) CA1186280A (pt)
DE (1) DE3274470D1 (pt)
ES (2) ES8400635A1 (pt)
IE (1) IE53843B1 (pt)
IL (1) IL66784A (pt)
IN (1) IN157462B (pt)
PH (1) PH18998A (pt)
PT (1) PT75612B (pt)
ZA (1) ZA826615B (pt)

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US4514437A (en) * 1984-05-02 1985-04-30 Energy Conversion Devices, Inc. Apparatus for plasma assisted evaporation of thin films and corresponding method of deposition
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US5281541A (en) * 1990-09-07 1994-01-25 Canon Kabushiki Kaisha Method for repairing an electrically short-circuited semiconductor device, and process for producing a semiconductor device utilizing said method
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JP2824808B2 (ja) * 1990-11-16 1998-11-18 キヤノン株式会社 マイクロ波プラズマｃｖｄ法による大面積の機能性堆積膜を連続的に形成する装置
US5629054A (en) * 1990-11-20 1997-05-13 Canon Kabushiki Kaisha Method for continuously forming a functional deposit film of large area by micro-wave plasma CVD method
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US6979840B1 (en) * 1991-09-25 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having anodized metal film between the gate wiring and drain wiring
US5919310A (en) * 1991-10-07 1999-07-06 Canon Kabushiki Kaisha Continuously film-forming apparatus provided with improved gas gate means
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Also Published As

Publication number Publication date
IN157462B (pt) 1986-04-05
EP0076426A2 (en) 1983-04-13
ZA826615B (en) 1983-08-31
US4438723A (en) 1984-03-27
AU8813682A (en) 1983-04-14
ATE23883T1 (de) 1986-12-15
IE822164L (en) 1983-03-28
EP0076426B1 (en) 1986-11-26
IL66784A (en) 1985-09-29
PT75612A (en) 1982-10-01
CA1186280A (en) 1985-04-30
AU552270B2 (en) 1986-05-29
PH18998A (en) 1985-12-03
KR900007042B1 (ko) 1990-09-27
ES516034A0 (es) 1983-10-16
IL66784A0 (en) 1982-12-31
EP0076426A3 (en) 1984-07-25
IE53843B1 (en) 1989-03-15
JPH0338731B2 (pt) 1991-06-11
ES522825A0 (es) 1984-09-16
ES8400635A1 (es) 1983-10-16
DE3274470D1 (en) 1987-01-15
BR8205600A (pt) 1983-08-30
ES8407626A1 (es) 1984-09-16
JPS5870524A (ja) 1983-04-27

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